JP7041135B2 - 改善されたディッシングおよびパターン選択性を有する酸化物および窒化物選択性のcmp組成物 - Google Patents
改善されたディッシングおよびパターン選択性を有する酸化物および窒化物選択性のcmp組成物 Download PDFInfo
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- JP7041135B2 JP7041135B2 JP2019519673A JP2019519673A JP7041135B2 JP 7041135 B2 JP7041135 B2 JP 7041135B2 JP 2019519673 A JP2019519673 A JP 2019519673A JP 2019519673 A JP2019519673 A JP 2019519673A JP 7041135 B2 JP7041135 B2 JP 7041135B2
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Organic Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
この実施例は、本発明によるポリエチレングリコールジカルボン酸および3,5-ジヒドロキシ安息香酸を含むポリッシング加工用組成物によって示される窒化物損失およびディッシングの減少を実証する。
この実施例は、本発明による3,5-ジヒドロキシ安息香酸を含むポリッシング加工用組成物によって示される改善されたSiO除去速度を実証する。
この実施例は、本発明による3,5-ジヒドロキシ安息香酸を含むポリッシング加工用組成物によって示される窒化物損失およびディッシングの減少を実証する。
この実施例は、本発明によるセリア、3,5-ジヒドロキシ安息香酸、ポリエチレングリコールおよびポリビニルアルコールを含むポリッシング加工用組成物によって示される窒化物損失およびディッシングの減少を実証する。
この実施例は、本発明による3,4-ジヒドロキシ安息香酸または3,5-ジヒドロキシ安息香酸を含むポリッシング加工用組成物によって示される除去速度を比較する。
この実施例は、本発明による3,4-ジヒドロキシ安息香酸または3,5-ジヒドロキシ安息香酸を含むポリッシング加工用組成物によって示される時間の関数としての除去速度を比較する。
この実施例は、本発明の実施形態による、例示的な濃縮ポリッシング加工用組成物の安定性を実証する。
Claims (22)
- 化学機械ポリッシング加工用組成物であって、
(a)湿式法セリア研磨剤と、
(b)ポリヒドロキシ芳香族カルボン酸であって、3,4-ジヒドロキシ安息香酸または3,5-ジヒドロキシ安息香酸である前記ポリヒドロキシ芳香族カルボン酸と、
(c)任意選択で、式(I)のイオン性ポリマーであって、
Z1およびZ2は、独立して、OまたはSであり、
R1、R2、R3、およびR4は、独立して、水素、C1~C6アルキル、およびC7~C10アリールから選択され、
nは3~500の整数である、イオン性ポリマーと、
(d)水と、を含み、
前記ポリッシング加工用組成物が、約1~約4.5のpHを有する、組成物。 - 前記湿式法セリア研磨剤が、前記ポリッシング加工用組成物の約0.05質量%~約1質量%の量で存在する、請求項1に記載のポリッシング加工用組成物。
- X1およびX2がともに-COOHである、請求項1に記載のポリッシング加工用組成物。
- Z1およびZ2がともにOであり、かつR1、R2、R3、およびR4が水素である、請求項3に記載のポリッシング加工用組成物。
- 前記イオン性ポリマーが、約500ダルトン~約10,000ダルトンの分子量を有し、nが8~500の整数である、請求項1に記載のポリッシング加工用組成物。
- 前記イオン性ポリマーが、前記ポリッシング加工用組成物の約0.01質量%~約0.5質量%の量で存在する、請求項1に記載のポリッシング加工用組成物。
- 前記ポリッシング加工用組成物がポリビニルアルコールをさらに含み、前記ポリビニルアルコールが、約20,000ダルトン~約200,000ダルトンの分子量を有する分岐ポリビニルアルコールである、請求項1に記載のポリッシング加工用組成物。
- 前記ポリッシング加工用組成物がポリエチレングリコールをさらに含む、請求項1に記載のポリッシング加工用組成物。
- 基板を化学機械的にポリッシング加工する方法であって、
(i)基板を用意することと、
(ii)ポリッシング加工用パッドを用意することと、
(iii)化学機械ポリッシング加工用組成物を用意することであって、前記化学機械ポリッシング加工用組成物が、
(a)湿式法セリア研磨剤と、
(b)ポリヒドロキシ芳香族カルボン酸であって、3,4-ジヒドロキシ安息香酸または3,5-ジヒドロキシ安息香酸である前記ポリヒドロキシ芳香族カルボン酸と、
(c)式(I)のイオン性ポリマーであって、
Z1およびZ2は、独立して、OまたはSであり、
R1、R2、R3、およびR4は、独立して、水素、C1~C6アルキル、およびC7~C10アリールから選択され、
nは3~500の整数である、イオン性ポリマーと、
(d)水と、を含み、
前記ポリッシング加工用組成物が、約1~約4.5のpHを有する、化学機械ポリッシング加工用組成物を用意することと、
(iv)前記基板を前記ポリッシング加工用パッドおよび前記ポリッシング加工用組成物と接触させることと、
(v)前記ポリッシング加工用パッドおよび前記化学機械ポリッシング加工用組成物を前記基板に対して移動させて、前記基板の少なくとも一部を研磨して、前記基板をポリッシング加工することと、を含む、方法。 - 前記湿式法セリア研磨剤が、前記ポリッシング加工用組成物の約0.05質量%~約1質量%の量で存在する、請求項9に記載の方法。
- X1およびX2がともに-COOHである、請求項9に記載の方法。
- Z1およびZ2がともにOであり、かつR1、R2、R3、およびR4が水素である、請求項11に記載の方法。
- 前記イオン性ポリマーが、約500ダルトン~約10,000ダルトンの分子量を有し、nが8~500の整数である、請求項9に記載の方法。
- 前記イオン性ポリマーが、前記ポリッシング加工用組成物の約0.01質量%~約0.5質量%の量で存在する、請求項9に記載の方法。
- 前記ポリッシング加工用組成物がポリビニルアルコールをさらに含み、前記ポリビニルアルコールが、約20,000ダルトン~約200,000ダルトンの分子量を有する分岐ポリビニルアルコールである、請求項9に記載の方法。
- 前記ポリッシング加工用組成物がポリエチレングリコールをさらに含む、請求項9に記載の方法。
- 前記基板が酸化ケイ素を含み、前記酸化ケイ素の少なくとも一部を研磨して、前記基板をポリッシング加工する、請求項9に記載の方法。
- 前記基板が窒化ケイ素をさらに含み、前記窒化ケイ素の少なくとも一部を研磨して、前記基板をポリッシング加工する、請求項17に記載の方法。
- 前記基板がポリシリコンをさらに含み、前記ポリシリコンの少なくとも一部を研磨して、前記基板をポリッシング加工する、請求項17に記載の方法。
- 化学機械ポリッシング加工用組成物であって、
(a)湿式法セリア研磨剤と、
(b)ポリヒドロキシ芳香族カルボン酸であって、3,4-ジヒドロキシ安息香酸または3,5-ジヒドロキシ安息香酸である前記ポリヒドロキシ芳香族カルボン酸と、
(c)水と、を含み、
前記ポリッシング加工用組成物が、約1~約4.5のpHを有する、組成物。 - ポリエチレングリコールまたはポリビニルアルコールの群から選択される1つ以上の非イオン性ポリマーをさらに含む、請求項20に記載の組成物。
- 基板を化学機械的にポリッシング加工する方法であって、
(i)基板を用意することと、
(ii)ポリッシング加工用パッドを用意することと、
(iii)請求項20に記載の化学機械ポリッシング加工用組成物を用意することと、
(iv)前記基板を前記ポリッシング加工用パッドおよび前記ポリッシング加工用組成物と接触させることと、
(v)前記ポリッシング加工用パッドおよび前記化学機械ポリッシング加工用組成物を前記基板に対して移動させて、前記基板の少なくとも一部を研磨して、前記基板をポリッシング加工することと、を含む、方法。
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