JP7037424B2 - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
- Publication number
- JP7037424B2 JP7037424B2 JP2018081078A JP2018081078A JP7037424B2 JP 7037424 B2 JP7037424 B2 JP 7037424B2 JP 2018081078 A JP2018081078 A JP 2018081078A JP 2018081078 A JP2018081078 A JP 2018081078A JP 7037424 B2 JP7037424 B2 JP 7037424B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- holding
- metal film
- tape
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003672 processing method Methods 0.000 title claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 238000001816 cooling Methods 0.000 claims description 28
- 235000012431 wafers Nutrition 0.000 description 129
- 239000000758 substrate Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 238000002407 reforming Methods 0.000 description 3
- 208000032365 Electromagnetic interference Diseases 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
Description
30:当接冷却手段
31:当接面
32:冷却部
40:破断プレート
51:金属膜
52:改質層
T :保持テープ
W :ウェーハ
Claims (1)
- 表面に複数の分割予定ラインが格子状に形成されているとともに裏面に金属膜が形成されたウェーハを、強度が低下した該分割予定ラインに沿って個々のデバイスに分割するウェーハの加工方法であって、
ウェーハの表面及び裏面の一方を下面、他方を上面として当該下面に保持テープを貼着するテープ貼着ステップと、
該保持テープが貼着されたウェーハを該分割予定ラインに沿って保持するウェーハ保持ステップと、
該保持テープを介して保持されたウェーハを該分割予定ラインに沿って吸引することにより、ウェーハを該分割予定ラインに沿って破断する破断ステップと、を含み、
該破断ステップの際に、露呈するウェーハの上面全面に当接する当接面と該当接面を0℃以下に冷却する冷却部を備える当接冷却手段をウェーハの上面に当接しながら破断を行うこと、を特徴とするウェーハの加工方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018081078A JP7037424B2 (ja) | 2018-04-20 | 2018-04-20 | ウェーハの加工方法 |
DE102019205697.0A DE102019205697B4 (de) | 2018-04-20 | 2019-04-18 | Verfahren zum bearbeiten eines wafers |
US16/388,137 US11158541B2 (en) | 2018-04-20 | 2019-04-18 | Method of processing wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018081078A JP7037424B2 (ja) | 2018-04-20 | 2018-04-20 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019192700A JP2019192700A (ja) | 2019-10-31 |
JP7037424B2 true JP7037424B2 (ja) | 2022-03-16 |
Family
ID=68105353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018081078A Active JP7037424B2 (ja) | 2018-04-20 | 2018-04-20 | ウェーハの加工方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11158541B2 (ja) |
JP (1) | JP7037424B2 (ja) |
DE (1) | DE102019205697B4 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7140626B2 (ja) * | 2018-10-10 | 2022-09-21 | 株式会社ディスコ | リングフレームの保持機構 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006108273A (ja) | 2004-10-04 | 2006-04-20 | Disco Abrasive Syst Ltd | ウエーハの分割方法および分割装置 |
JP2012119670A (ja) | 2010-11-12 | 2012-06-21 | Tokyo Seimitsu Co Ltd | 半導体ウェハの分割方法及び分割装置 |
JP2018019007A (ja) | 2016-07-29 | 2018-02-01 | 株式会社東京精密 | ワーク分割装置及びワーク分割方法 |
JP2018022875A (ja) | 2016-08-05 | 2018-02-08 | 株式会社ディスコ | ウェーハの加工方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101170587B1 (ko) | 2005-01-05 | 2012-08-01 | 티에이치케이 인텍스 가부시키가이샤 | 워크의 브레이크 방법 및 장치, 스크라이브 및 브레이크방법, 및 브레이크 기능을 갖는 스크라이브 장치 |
JP4851795B2 (ja) | 2006-01-13 | 2012-01-11 | 株式会社ディスコ | ウエーハの分割装置 |
JP5658043B2 (ja) | 2011-01-07 | 2015-01-21 | 株式会社ディスコ | 分割方法 |
-
2018
- 2018-04-20 JP JP2018081078A patent/JP7037424B2/ja active Active
-
2019
- 2019-04-18 US US16/388,137 patent/US11158541B2/en active Active
- 2019-04-18 DE DE102019205697.0A patent/DE102019205697B4/de active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006108273A (ja) | 2004-10-04 | 2006-04-20 | Disco Abrasive Syst Ltd | ウエーハの分割方法および分割装置 |
JP2012119670A (ja) | 2010-11-12 | 2012-06-21 | Tokyo Seimitsu Co Ltd | 半導体ウェハの分割方法及び分割装置 |
JP2018019007A (ja) | 2016-07-29 | 2018-02-01 | 株式会社東京精密 | ワーク分割装置及びワーク分割方法 |
JP2018022875A (ja) | 2016-08-05 | 2018-02-08 | 株式会社ディスコ | ウェーハの加工方法 |
Also Published As
Publication number | Publication date |
---|---|
DE102019205697B4 (de) | 2022-03-17 |
JP2019192700A (ja) | 2019-10-31 |
US20190326174A1 (en) | 2019-10-24 |
US11158541B2 (en) | 2021-10-26 |
DE102019205697A1 (de) | 2019-10-24 |
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