JP7024367B2 - 光モジュール - Google Patents
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- JP7024367B2 JP7024367B2 JP2017237770A JP2017237770A JP7024367B2 JP 7024367 B2 JP7024367 B2 JP 7024367B2 JP 2017237770 A JP2017237770 A JP 2017237770A JP 2017237770 A JP2017237770 A JP 2017237770A JP 7024367 B2 JP7024367 B2 JP 7024367B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
- H01S5/02446—Cooling being separate from the laser chip cooling
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H01S5/1085—Oblique facets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1212—Chirped grating
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
最初に、本発明の実施形態の内容を列記して説明する。一実施形態による光モジュールは、第1の方向に並び第1の方向と交差する第1及び第2の端壁、並びに第1の方向に沿った一対の側壁を有する筐体と、筐体内に収容された半導体レーザ素子と、半導体レーザ素子を搭載し、半導体レーザ素子の温度を制御する第1の温度制御装置と、筐体内において半導体レーザ素子と光学的に結合された光分岐部品及びエタロンフィルタを含む波長ロッカ部と、波長ロッカ部を搭載し、エタロンフィルタの温度を制御する第2の温度制御装置と、を備える。第1の端壁には、半導体レーザ素子からのレーザ光を筐体の外部へ出力する光出力ポートが設けられる。第2の端壁には、外部接続端子を有し筐体の内部と筐体の外部とを電気的に接続するフィードスルーが設けられる。一対の側壁には外部接続端子が設けられない。第2の温度制御装置は、筐体の底面に熱的に結合された第1の基板と、エタロンフィルタに熱的に結合された第2の基板と、第1及び第2の基板の間で熱の移動を行う熱移動部と、を有し、第1の方向において第1の温度制御装置と第2の端壁との間に配置される。光モジュールは、熱移動部に対して第1の方向と交差する第2の方向に並んで配置され、フィードスルーから第1の温度制御装置へ電力を供給する配線パターンを更に備える。
本発明の実施形態に係る光モジュールの具体例を、以下に図面を参照しつつ説明する。なお、本発明はこれらの例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味及び範囲内でのすべての変更が含まれることが意図される。以下の説明では、図面の説明において同一の要素には同一の符号を付し、重複する説明を省略する。
Claims (3)
- 第1の方向に並び前記第1の方向と交差する第1及び第2の端壁、並びに前記第1の方向に沿った一対の側壁を有する筐体と、
前記筐体内に収容された半導体レーザ素子と、
前記半導体レーザ素子を搭載し、前記半導体レーザ素子の温度を制御する第1の温度制御装置と、
前記筐体内において前記半導体レーザ素子と光学的に結合された光分岐部品及びエタロンフィルタを含む波長ロッカ部と、
前記波長ロッカ部を搭載し、前記エタロンフィルタの温度を制御する第2の温度制御装置と、を備え、
前記第1の端壁には、前記半導体レーザ素子からのレーザ光を前記筐体の外部へ出力する光出力ポートが設けられ、
前記第2の端壁には、外部接続端子を有し前記筐体の内部と前記筐体の外部とを電気的に接続するフィードスルーが設けられ、
前記一対の側壁には外部接続端子が設けられておらず、
前記第2の温度制御装置は、前記筐体の底面に熱的に結合された第1の基板と、前記エタロンフィルタに熱的に結合された第2の基板と、前記第1及び第2の基板の間で熱の移動を行う熱移動部と、を有し、前記第1の方向において前記第1の温度制御装置と前記第2の端壁との間に配置され、
前記熱移動部に対して前記第1の方向と交差する第2の方向に並んで配置され、前記フィードスルーから前記第1の温度制御装置へ電力を供給する配線パターンを更に備え、
前記配線パターンが前記第1の基板上に設けられており、
前記第2の温度制御装置と前記波長ロッカ部との間に配置され、前記波長ロッカ部を搭載するキャリア部材を更に備え、
前記キャリア部材は、前記熱移動部上に設けられた第1の領域と、前記配線パターンと対向する第2の領域とを有し、
前記エタロンフィルタは前記第1の領域上に配置され、前記光分岐部品は前記第2の領域上に配置される、光モジュール。 - 前記光分岐部品は前記半導体レーザ素子の背面と光学的に結合され、
前記半導体レーザ素子の前記背面は、前記第2の領域に対して前記第1の方向に並ぶ、請求項1に記載の光モジュール。 - 前記フィードスルーは、複数の段面を前記筐体の内側に有し、
前記筐体の前記底面に最も近い一の前記段面上には、前記第1及び第2の温度制御装置に電力を供給する端子のみが設けられている、請求項1または請求項2に記載の光モジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017237770A JP7024367B2 (ja) | 2017-12-12 | 2017-12-12 | 光モジュール |
US16/771,614 US11264779B2 (en) | 2017-12-12 | 2018-12-07 | Optical module |
PCT/JP2018/045153 WO2019117044A1 (ja) | 2017-12-12 | 2018-12-07 | 光モジュール |
CN201880079645.5A CN111448722B (zh) | 2017-12-12 | 2018-12-07 | 光学组件 |
Applications Claiming Priority (1)
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JP2017237770A JP7024367B2 (ja) | 2017-12-12 | 2017-12-12 | 光モジュール |
Publications (2)
Publication Number | Publication Date |
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JP2019106445A JP2019106445A (ja) | 2019-06-27 |
JP7024367B2 true JP7024367B2 (ja) | 2022-02-24 |
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JP2017237770A Active JP7024367B2 (ja) | 2017-12-12 | 2017-12-12 | 光モジュール |
Country Status (4)
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US (1) | US11264779B2 (ja) |
JP (1) | JP7024367B2 (ja) |
CN (1) | CN111448722B (ja) |
WO (1) | WO2019117044A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US12040587B2 (en) * | 2018-12-26 | 2024-07-16 | Sumitomo Electric Device Innovations, Inc. | Optical semiconductor device |
JP7400613B2 (ja) * | 2020-04-27 | 2023-12-19 | 住友電気工業株式会社 | 光送信モジュール、光送受信モジュール、及び光モジュール |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003110190A (ja) | 2001-09-28 | 2003-04-11 | Furukawa Electric Co Ltd:The | レーザモジュール |
JP2008166730A (ja) | 2006-12-04 | 2008-07-17 | Nec Corp | 光モジュールおよび光トランシーバ |
US20150162990A1 (en) | 2013-12-09 | 2015-06-11 | Emcore Corporation | Small packaged tunable laser transmitter |
JP2016115721A (ja) | 2014-12-11 | 2016-06-23 | 住友電気工業株式会社 | 光モジュール |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3794552B2 (ja) * | 2001-03-09 | 2006-07-05 | 古河電気工業株式会社 | 光モジュール、光送信器及び光モジュールの製造方法 |
CA2405651A1 (en) | 2001-09-28 | 2003-03-28 | The Furukawa Electric Co., Ltd | Optical filter, laser module, and wavelength locker module |
US7505490B2 (en) * | 2003-09-30 | 2009-03-17 | Pgt Phontonics S.P.A. | Phase-control in an external-cavity tuneable laser |
JP2005251838A (ja) * | 2004-03-02 | 2005-09-15 | Sharp Corp | 半導体レーザ装置 |
US20150162723A1 (en) * | 2013-12-09 | 2015-06-11 | Emcore Corporation | Small packaged tunable laser |
US9804347B2 (en) | 2014-10-28 | 2017-10-31 | Sumitomo Electric Industries, Ltd. | Method of assembling the optical module implementing Mach-Zehnder modulator |
CN104767103B (zh) * | 2015-03-30 | 2017-12-19 | 青岛海信宽带多媒体技术有限公司 | 一种激光器用连接结构及激光器组件 |
US10644478B2 (en) * | 2015-09-15 | 2020-05-05 | Nec Corporation | Light source module and method of manufacturing light source module |
-
2017
- 2017-12-12 JP JP2017237770A patent/JP7024367B2/ja active Active
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2018
- 2018-12-07 CN CN201880079645.5A patent/CN111448722B/zh active Active
- 2018-12-07 US US16/771,614 patent/US11264779B2/en active Active
- 2018-12-07 WO PCT/JP2018/045153 patent/WO2019117044A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003110190A (ja) | 2001-09-28 | 2003-04-11 | Furukawa Electric Co Ltd:The | レーザモジュール |
JP2008166730A (ja) | 2006-12-04 | 2008-07-17 | Nec Corp | 光モジュールおよび光トランシーバ |
US20150162990A1 (en) | 2013-12-09 | 2015-06-11 | Emcore Corporation | Small packaged tunable laser transmitter |
JP2016115721A (ja) | 2014-12-11 | 2016-06-23 | 住友電気工業株式会社 | 光モジュール |
Also Published As
Publication number | Publication date |
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CN111448722B (zh) | 2023-07-28 |
JP2019106445A (ja) | 2019-06-27 |
US11264779B2 (en) | 2022-03-01 |
US20200303897A1 (en) | 2020-09-24 |
WO2019117044A1 (ja) | 2019-06-20 |
CN111448722A (zh) | 2020-07-24 |
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