JP7018882B2 - 処理チャンバのための高温ヒータ - Google Patents
処理チャンバのための高温ヒータ Download PDFInfo
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- JP7018882B2 JP7018882B2 JP2018530512A JP2018530512A JP7018882B2 JP 7018882 B2 JP7018882 B2 JP 7018882B2 JP 2018530512 A JP2018530512 A JP 2018530512A JP 2018530512 A JP2018530512 A JP 2018530512A JP 7018882 B2 JP7018882 B2 JP 7018882B2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/18—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
- H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/36—Coil arrangements
- H05B6/362—Coil arrangements with flat coil conductors
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Resistance Heating (AREA)
Description
Claims (8)
- 側壁で囲まれた円板状の本体、及び
前記円板状の本体の上側表面上で軸から離れる方向に間隔を空けられた複数の加熱要素であって、各々が、軸から離れる方向に間隔を空けられた加熱区域を形成し、前記加熱要素の長さを規定する内側端と外側端を有する螺旋形状を有し、前記螺旋形状の各コイルが、隣接するコイル間のアーク放電を妨げるのに十分な距離だけ隣接するコイルから間隔を空けられている、複数の加熱要素を備える、ヒータアセンブリであって、
前記複数の加熱要素が、前記円板状の本体の中心を貫く中心軸から第1の距離の内側加熱区域、前記中心軸から前記第1の距離よりも大きい第2の距離の中間加熱区域、及び前記中心軸から前記第2の距離よりも大きい第3の距離の外側加熱区域を形成し、
前記内側加熱区域が、第1の数のコイルを有する内側加熱要素を備え、前記中間加熱区域が、第2の数のコイルを有する中間加熱要素を備え、前記外側加熱区域が、第3の数のコイルを有する外側加熱要素を備え、前記内側加熱要素、前記中間加熱要素、及び前記外側加熱要素の各々が、少なくとも3つのコイルを備え、
前記ヒータアセンブリは、前記円板状の本体の前記上側表面上に配置され、内側端、外側端、上端、第1の側部及び第2の側部を有する、キャリッジを更に備え、
前記キャリッジは、前記上端から切り取られ、前記第1及び第2の側部を突き抜けるように構成され、各々が加熱要素を支持するようにサイズ決定されている、複数の凹部が設けられ、前記キャリッジは、内側位置と外側位置との間でレールに沿って移動するように構成され、前記内側位置が前記外側位置よりも前記中心軸に近い、ヒータアセンブリ。 - コイルの前記第3の数が、コイルの前記第1の数及びコイルの前記第2の数よりも大きい、請求項1に記載のヒータアセンブリ。
- 前記内側加熱要素、前記中間加熱要素、及び前記外側加熱要素の各々が、グラファイトを含む、請求項1に記載のヒータアセンブリ。
- 前記内側加熱要素が、前記円板状の本体の前記上側表面内の内側チャネル内に配置され、前記内側加熱要素の前記長さが前記内側チャネルの範囲内にあるように、前記内側チャネルが前記内側加熱要素と形状において適合している、請求項1に記載のヒータアセンブリ。
- 前記内側加熱要素の膨張を可能にするように、前記内側チャネルが前記内側加熱要素よりも広く、且つ/又は、前記内側チャネルの壁が前記内側加熱要素の上端の上方へ延在するように、前記内側チャネルが前記内側加熱要素の高さよりも大きい深さを有する、請求項4に記載のヒータアセンブリ。
- 前記中間加熱要素が、前記円板状の本体の前記上側表面内の中間チャネル内に配置され、前記中間加熱要素の前記長さが前記中間チャネルの範囲内にあるように、前記中間チャネルが前記中間加熱要素と形状において適合している、請求項4に記載のヒータアセンブリ。
- 前記中間加熱要素の膨張を可能にするように、前記中間チャネルが前記中間加熱要素よりも広く、且つ/又は、前記中間チャネルの壁が前記中間加熱要素の上端の上方へ延在するように、前記中間チャネルが前記中間加熱要素の高さよりも大きい深さを有する、請求項6に記載のヒータアセンブリ。
- ガス分配アセンブリ、
前記ガス分配アセンブリに隣接し、且つ、前記ガス分配アセンブリから間隔を空けられた、サセプタアセンブリ、及び
請求項1から7のいずれか一項に記載のヒータアセンブリを備える、処理チャンバ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562274114P | 2015-12-31 | 2015-12-31 | |
US62/274,114 | 2015-12-31 | ||
PCT/US2016/068863 WO2017117213A1 (en) | 2015-12-31 | 2016-12-28 | High temperature heater for processing chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019503555A JP2019503555A (ja) | 2019-02-07 |
JP7018882B2 true JP7018882B2 (ja) | 2022-02-14 |
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Application Number | Title | Priority Date | Filing Date |
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JP2018530512A Active JP7018882B2 (ja) | 2015-12-31 | 2016-12-28 | 処理チャンバのための高温ヒータ |
Country Status (5)
Country | Link |
---|---|
US (1) | US10959294B2 (ja) |
JP (1) | JP7018882B2 (ja) |
KR (1) | KR102649605B1 (ja) |
CN (1) | CN108432342B (ja) |
WO (1) | WO2017117213A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102052702B1 (ko) * | 2017-06-26 | 2019-12-05 | 엘지전자 주식회사 | 코일 어셈블리 및 유도 가열 장치 |
CN108682635B (zh) * | 2018-05-03 | 2021-08-06 | 拓荆科技股份有限公司 | 具有加热机制的晶圆座及包含该晶圆座的反应腔体 |
KR102646002B1 (ko) * | 2019-03-15 | 2024-03-08 | 램 리써치 코포레이션 | 반도체 제작 적용 예들에서의 마찰 교반 용접 |
JP6976279B2 (ja) * | 2019-03-25 | 2021-12-08 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
KR102246087B1 (ko) * | 2019-11-22 | 2021-05-03 | 주식회사 다원시스 | 유도 가열 장치 |
KR102247030B1 (ko) * | 2019-11-22 | 2021-04-30 | 주식회사 다원시스 | 유도 가열 장치 |
CN116045627A (zh) * | 2021-09-17 | 2023-05-02 | 江苏九香茶业有限公司 | 一种红茶加工用干燥设备的干燥方法 |
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- 2016-12-28 US US15/392,453 patent/US10959294B2/en active Active
- 2016-12-28 KR KR1020187021880A patent/KR102649605B1/ko active IP Right Grant
- 2016-12-28 WO PCT/US2016/068863 patent/WO2017117213A1/en active Application Filing
- 2016-12-28 CN CN201680075161.4A patent/CN108432342B/zh active Active
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JP2002231420A (ja) | 2000-04-07 | 2002-08-16 | Ibiden Co Ltd | セラミックヒータ |
JP2004022243A (ja) | 2002-06-13 | 2004-01-22 | Sumitomo Osaka Cement Co Ltd | 加熱装置 |
JP2008108703A (ja) | 2006-09-28 | 2008-05-08 | Covalent Materials Corp | 面状ヒータ及びこのヒータを備えた半導体熱処理装置 |
WO2013002028A1 (ja) | 2011-06-29 | 2013-01-03 | 住友電気工業株式会社 | ガラス母材用加熱炉 |
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US10959294B2 (en) | 2021-03-23 |
JP2019503555A (ja) | 2019-02-07 |
CN108432342A (zh) | 2018-08-21 |
KR20180089912A (ko) | 2018-08-09 |
US20170196047A1 (en) | 2017-07-06 |
WO2017117213A1 (en) | 2017-07-06 |
KR102649605B1 (ko) | 2024-03-19 |
CN108432342B (zh) | 2022-09-16 |
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