JP7004824B2 - 光子検出装置及び光子検出方法 - Google Patents
光子検出装置及び光子検出方法 Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims description 47
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- 101150098161 APD1 gene Proteins 0.000 description 109
- 101100379208 Arabidopsis thaliana APD2 gene Proteins 0.000 description 103
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Description
差動部103は、第1受光部APD1のアノード電極から第1信号を受信し、第2受光部APD2のアノード電極から第2信号を受信し、その第1信号と第2信号の差値を出力する。
Claims (17)
- 光子を受信すると共にゲート信号の供給を受けて第1信号を出力する第1受光部;
上記光子の受信をすることなく上記ゲート信号の供給を受けて第2信号を出力する第2受光部;及び、
上記第1受光部から受信される第1信号と上記第2受光部から受信される第2信号とに基づいて上記光子が上記第1受光部で受信されたことを判断する判断部;を含み、
上記光子が受信された上記第1受光部の降伏電圧は上記第2受光部の降伏電圧よりも低く、
上記判断部は、
上記第2信号を位相反転し上記第1信号と合成して生成される信号に基づいて上記光子が上記第1受光部で受信されたことを判断し、
上記第1信号は、
上記光子の受信に起因する信号と上記第1受光部に起因する信号とを含み、
上記第2信号は、
上記第2受光部に起因する信号を含み、
上記第1受光部に起因する信号は、
上記第1受光部の静電容量に起因する第1静電容量性応答信号であり、
上記第2受光部に起因する信号は、
上記第2受光部の静電容量に起因する第2静電容量性応答信号であり、
上記第1静電容量性応答信号は上記第2静電容量性応答信号と実質的に同一である、光子検出装置。 - 上記ゲート信号は、
活性化期間では第1電圧に維持され、上記活性化期間を除いた残りの非活性化期間では上記第1電圧よりも低い第2電圧に維持される請求項1に記載の光子検出装置。 - 上記第1電圧は、
上記第1受光部の降伏電圧よりも高く上記第2受光部の降伏電圧よりも低いか、又は、上記第1受光部の降伏電圧及び上記第2受光部の降伏電圧よりも高い請求項2に記載の光子検出装置。 - 上記第1受光部に含まれる増幅層と上記第2受光部に含まれる増幅層とは、互いに異なる厚さを有する請求項1に記載の光子検出装置。
- 増幅層の厚さと降伏電圧の大きさが比例する場合、上記第2受光部に含まれる増幅層は、上記第1受光部に含まれる増幅層よりもさらに大きい厚さを有する請求項4に記載の光子検出装置。
- 上記第1受光部に含まれる増幅層と上記第2受光部に含まれる増幅層とは、互いに異なる直径を有する請求項4に記載の光子検出装置。
- 上記第2受光部に含まれる増幅層は、上記第1受光部に含まれる増幅層よりもさらに大きい直径を有する請求項6に記載の光子検出装置。
- 上記第1受光部及び上記第2受光部が形成された基板を含む請求項1に記載の光子検出装置。
- 上記第1受光部及び上記第2受光部は上記基板の第1面上に位置する請求項8に記載の光子検出装置。
- 上記基板の第1面と対向する上記基板の第2面上に位置する遮断膜をさらに含む請求項9に記載の光子検出装置。
- 上記遮断膜は、
上記第1受光部に対応するように位置する透過孔を含む請求項10に記載の光子検出装置。 - 上記透過孔内に位置する反射防止膜をさらに含む請求項11に記載の光子検出装置。
- 上記基板の第1面は、上記第1受光部と上記第2受光部との間の素子分離溝によって区分された第1領域及び第2領域を含み;
上記第1受光部は上記第1領域に位置し、上記第2受光部は上記第2領域に位置する請求項9に記載の光子検出装置。 - 光子が受信され第1降伏電圧を有する第1受光部からゲート信号の供給による第1信号を受信する段階;
上記光子の受信をすることなく上記第1降伏電圧よりも高い第2降伏電圧を有する第2受光部から上記ゲート信号の供給による第2信号を受信する段階;及び、
上記第1信号と上記第2信号に基づいて上記光子が上記第1受光部で受信されたことを判断する段階;を含み、
上記判断する段階は、
上記第2信号を位相反転し上記第1信号と合成して生成される信号に基づいて上記光子が上記第1受光部で受信されたことを判断し、
上記第1信号は、
上記光子の受信に起因する信号と上記第1受光部に起因する信号とを含み、
上記第2信号は、
上記第2受光部に起因する信号を含み、
上記第1受光部に起因する信号は、
上記第1受光部の静電容量に起因する第1静電容量性応答信号であり、
上記第2受光部に起因する信号は、
上記第2受光部の静電容量に起因する第2静電容量性応答信号であり、
上記第1静電容量性応答信号は上記第2静電容量性応答信号と実質的に同一である、光子検出方法。 - 上記ゲート信号は、
活性化期間では第1電圧に維持され、上記活性化期間を除いた残りの非活性化期間では上記第1電圧よりも低い第2電圧に維持される請求項14に記載の光子検出方法。 - 上記第1電圧は、
上記第1受光部の降伏電圧よりも高く上記第2受光部の降伏電圧よりも低いか、又は、上記第1受光部の降伏電圧及び上記第2受光部の降伏電圧よりも高い請求項15に記載の光子検出方法。 - 上記第1信号と上記第2信号に基づいて上記光子が上記第1受光部で受信されたことを判断する段階は、
上記第2信号を位相反転し上記第1信号と合成して生成される信号に基づいて上記光子が上記第1受光部で受信されたことを判断する請求項14に記載の光子検出方法。
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KR102283699B1 (ko) * | 2019-11-28 | 2021-07-30 | 주식회사 우리로 | 단일 광자 검출장치, 단일 광자 검출장치에 이용되는 아발란치 포토다이오드 및 이의 제조방법 |
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CN113884280B (zh) * | 2021-12-08 | 2022-03-22 | 武汉市聚芯微电子有限责任公司 | 一种单光子光电器件的测量方法、装置 |
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JPH07322431A (ja) | 1994-03-29 | 1995-12-08 | Fuji Electric Co Ltd | ガス絶縁開閉装置 |
KR100464452B1 (ko) * | 2002-04-15 | 2005-01-03 | 삼성전자주식회사 | 애벌런치 포토다이오드 및 그 제조방법 |
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KR102394731B1 (ko) | 2022-05-04 |
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US20210050461A1 (en) | 2021-02-18 |
CN111406325B (zh) | 2023-11-14 |
JP2020533611A (ja) | 2020-11-19 |
WO2019050146A1 (ko) | 2019-03-14 |
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