JP6963524B2 - 電解メッキ装置 - Google Patents
電解メッキ装置 Download PDFInfo
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- JP6963524B2 JP6963524B2 JP2018053267A JP2018053267A JP6963524B2 JP 6963524 B2 JP6963524 B2 JP 6963524B2 JP 2018053267 A JP2018053267 A JP 2018053267A JP 2018053267 A JP2018053267 A JP 2018053267A JP 6963524 B2 JP6963524 B2 JP 6963524B2
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- Prior art date
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- 238000009713 electroplating Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 114
- 238000007747 plating Methods 0.000 claims description 52
- 238000003825 pressing Methods 0.000 claims description 24
- 238000007789 sealing Methods 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 238000005192 partition Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1628—Specific elements or parts of the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/004—Sealing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/005—Contacting devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Description
前記メッキ槽の液面の法線方向に被処理基板を上下させる移動機構と、
前記被処理基板の被処理面の周縁部に配置され、前記被処理基板を前記メッキ槽に浸漬したときに前記メッキ液を前記被処理面の中央側に封止するシール部材と、
前記シール部材とは独立して設けられ、前記シール部材よりも前記被処理基板の周縁部側で前記被処理面への電気的な導通を行うコンタクト部材と、を備える電解メッキ装置が提供される。
Claims (5)
- メッキ液が充填されるメッキ槽と、
前記メッキ槽の液面の法線方向に被処理基板を上下させる移動機構と、
前記被処理基板の被処理面の周縁部に配置され、前記被処理基板を前記メッキ槽に浸漬したときに前記メッキ液を前記被処理面の中央側に封止するシール部材と、
前記シール部材とは独立して設けられ、前記シール部材よりも前記被処理基板の周縁部側で前記被処理面への電気的な導通を行うコンタクト部材と、を備え、
前記コンタクト部材は、前記被処理基板の前記被処理面と反対側の裏面又は前記被処理基板を支持する支持基板に接触し、
前記コンタクト部材が前記被処理基板又は前記支持基板に接触される箇所の前記被処理面の法線方向の高さと、前記シール部材が前記被処理基板に接触される箇所の前記被処理面の法線方向の高さとは、独立して制御される、電解メッキ装置。 - 前記コンタクト部材は、前記被処理基板を支持する支持基板の側方の第1端面と、前記支持基板における前記被処理基板の接触面とは反対側の第2端面との少なくとも一つに接触される、請求項1に記載の電解メッキ装置。
- 前記シール部材が前記被処理基板に付与する押圧力と、前記コンタクト部材が前記被処理基板又は前記支持基板に付与する押圧力とは、それぞれ独立に制御される、請求項2に記載の電解メッキ装置。
- 前記コンタクト部材は、前記第1又は第2端面の少なくとも一つに、それぞれ離隔して複数箇所で接続され、
前記複数箇所のそれぞれにおいて、前記コンタクト部材が前記被処理基板に付与する押圧力はそれぞれ独立に制御される、請求項3に記載の電解メッキ装置。 - 前記コンタクト部材が前記被処理基板又は前記支持基板に接触される箇所の前記被処理面の法線方向の高さと、前記シール部材が前記被処理基板に接触される箇所の前記被処理面の法線方向の高さとは、前記複数箇所のそれぞれにおいて独立して制御される、請求項4に記載の電解メッキ装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018053267A JP6963524B2 (ja) | 2018-03-20 | 2018-03-20 | 電解メッキ装置 |
CN201810886865.0A CN110306231B (zh) | 2018-03-20 | 2018-08-06 | 电解镀敷装置及电解镀敷方法 |
TW107127305A TWI699460B (zh) | 2018-03-20 | 2018-08-06 | 電解鍍敷裝置及電解鍍敷方法 |
US16/113,960 US10985006B2 (en) | 2018-03-20 | 2018-08-27 | Electrolytic plating apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018053267A JP6963524B2 (ja) | 2018-03-20 | 2018-03-20 | 電解メッキ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019163529A JP2019163529A (ja) | 2019-09-26 |
JP6963524B2 true JP6963524B2 (ja) | 2021-11-10 |
Family
ID=67984317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018053267A Active JP6963524B2 (ja) | 2018-03-20 | 2018-03-20 | 電解メッキ装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10985006B2 (ja) |
JP (1) | JP6963524B2 (ja) |
CN (1) | CN110306231B (ja) |
TW (1) | TWI699460B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI670491B (zh) * | 2018-12-10 | 2019-09-01 | 財團法人工業技術研究院 | 電化學製程裝置以及電化學製程裝置的操作方法 |
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WO2000003072A1 (en) * | 1998-07-10 | 2000-01-20 | Semitool, Inc. | Method and apparatus for copper plating using electroless plating and electroplating |
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JP2002097594A (ja) * | 2000-09-20 | 2002-04-02 | Ebara Corp | 基板めっき装置及び基板めっき方法 |
JP2002249896A (ja) | 2001-02-26 | 2002-09-06 | Tokyo Electron Ltd | 液処理装置、液処理方法 |
JP2002309398A (ja) | 2001-04-16 | 2002-10-23 | Tokyo Electron Ltd | メッキ処理装置、メッキ処理方法 |
TW554069B (en) * | 2001-08-10 | 2003-09-21 | Ebara Corp | Plating device and method |
WO2003085713A1 (en) * | 2002-04-03 | 2003-10-16 | Applied Materials, Inc. | Homogeneous copper-tin alloy plating for enhancement of electro-migration resistance in interconnects |
JP4303484B2 (ja) * | 2003-01-21 | 2009-07-29 | 大日本スクリーン製造株式会社 | メッキ装置 |
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JP2006233296A (ja) * | 2005-02-25 | 2006-09-07 | Yamamoto Mekki Shikenki:Kk | 電気めっき用治具 |
TWI343840B (en) * | 2005-07-06 | 2011-06-21 | Applied Materials Inc | Apparatus for electroless deposition of metals onto semiconductor substrates |
US20070256937A1 (en) * | 2006-05-04 | 2007-11-08 | International Business Machines Corporation | Apparatus and method for electrochemical processing of thin films on resistive substrates |
WO2010054677A1 (en) * | 2008-11-14 | 2010-05-20 | Replisaurus Technologies Inc. | A system for plating a conductive substrate, and a substrate holder for holding a conductive substrate during plating thereof |
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US9228270B2 (en) * | 2011-08-15 | 2016-01-05 | Novellus Systems, Inc. | Lipseals and contact elements for semiconductor electroplating apparatuses |
JP5643239B2 (ja) | 2012-01-30 | 2014-12-17 | 株式会社荏原製作所 | 基板ホルダ及びめっき装置 |
SG10201608038VA (en) * | 2012-03-28 | 2016-11-29 | Novellus Systems Inc | Methods and apparatuses for cleaning electroplating substrate holders |
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JP6745103B2 (ja) * | 2014-11-26 | 2020-08-26 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | 半導体電気メッキ装置用のリップシールおよび接触要素 |
US9758897B2 (en) * | 2015-01-27 | 2017-09-12 | Applied Materials, Inc. | Electroplating apparatus with notch adapted contact ring seal and thief electrode |
US10053793B2 (en) | 2015-07-09 | 2018-08-21 | Lam Research Corporation | Integrated elastomeric lipseal and cup bottom for reducing wafer sticking |
US20170073832A1 (en) * | 2015-09-11 | 2017-03-16 | Lam Research Corporation | Durable low cure temperature hydrophobic coating in electroplating cup assembly |
KR102381604B1 (ko) * | 2015-12-04 | 2022-04-01 | 에이씨엠 리서치 (상하이) 인코포레이티드 | 기판 보유 장치 |
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2018
- 2018-03-20 JP JP2018053267A patent/JP6963524B2/ja active Active
- 2018-08-06 CN CN201810886865.0A patent/CN110306231B/zh active Active
- 2018-08-06 TW TW107127305A patent/TWI699460B/zh active
- 2018-08-27 US US16/113,960 patent/US10985006B2/en active Active
Also Published As
Publication number | Publication date |
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US20190295836A1 (en) | 2019-09-26 |
JP2019163529A (ja) | 2019-09-26 |
CN110306231A (zh) | 2019-10-08 |
US10985006B2 (en) | 2021-04-20 |
TW201940749A (zh) | 2019-10-16 |
TWI699460B (zh) | 2020-07-21 |
CN110306231B (zh) | 2021-07-13 |
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