JP6960421B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- JP6960421B2 JP6960421B2 JP2019009476A JP2019009476A JP6960421B2 JP 6960421 B2 JP6960421 B2 JP 6960421B2 JP 2019009476 A JP2019009476 A JP 2019009476A JP 2019009476 A JP2019009476 A JP 2019009476A JP 6960421 B2 JP6960421 B2 JP 6960421B2
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- 238000012545 processing Methods 0.000 title claims description 77
- 238000003672 processing method Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 27
- 238000002474 experimental method Methods 0.000 description 37
- 238000000034 method Methods 0.000 description 10
- 238000012546 transfer Methods 0.000 description 9
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
<第1の実験及び第2の実験の条件>
・チャンバ10内の圧力:13.3Pa
・CF4ガスの流量:50sccm
・Arガスの流量:600sccm
・第1の高周波電力:60MHz、1000W
・第2の高周波電力:40MHz、550W
・パルス状の負極性の直流電圧の周波数f:400kHz
・パルス状の負極性の直流電圧のデューティー比:50%
・パルス状の負極性の直流電圧:−900V
<第3の実験及び第4の実験の第1の工程の条件>
・チャンバ10内の圧力:2.7Pa
・SiCl4ガスの流量:5sccm
・O2ガスの流量:50sccm
・Arガスの流量:800sccm
・第1の高周波電力:60MHz、1000W
・第2の高周波電力:40MHz、0W
・処理時間:30秒
<第3の実験の第2の工程の条件>
・チャンバ10内の圧力:6.7Pa
・H2ガスの流量:100sccm
・Arガスの流量:800sccm
・第1の高周波電力:60MHz、300W
・第2の高周波電力:40MHz、0W
・パルス状の負極性の直流電圧の周波数f:400kHz
・パルス状の負極性の直流電圧のデューティー比:50%
・パルス状の負極性の直流電圧:−900V
・処理時間:30秒
<第4の実験の第2の工程の条件>
・チャンバ10内の圧力:6.7Pa
・H2ガスの流量:100sccm
・Arガスの流量:800sccm
・第1の高周波電力:60MHz、300W
・第2の高周波電力:40MHz、0W
・負極性の直流電圧:−900V
・処理時間:30秒
Claims (6)
- チャンバと、
前記チャンバ内に設けられた下部電極を含む基板支持器と、
前記基板支持器の上方に設けられた上部電極と、
前記チャンバ内でプラズマを生成するように構成された高周波電源と、
前記上部電極に電気的に接続された直流電源装置と、
を備え、
前記直流電源装置は、パルス状の負極性の直流電圧を周期的に発生するように構成されており、
前記直流電源装置の出力電圧は、繰り返される周期の各々における第1の期間では、前記パルス状の負極性の直流電圧であり、前記周期の各々における残りの第2の期間では、ゼロボルトであり、
前記周期の逆数である周波数は、400kHz以上、1MHz以下である、
プラズマ処理装置。 - 前記周期において第1の期間が占める割合は、20%以上、60%以下である、請求項1に記載のプラズマ処理装置。
- 前記直流電源装置からのエネルギーを伝達する回路のグランド電極は、前記チャンバの導電性の壁部のみである、請求項1又は2に記載のプラズマ処理装置。
- 前記プラズマを生成するために前記高周波電源によって生成される高周波電力は、前記周期において一定に維持される、請求項1〜3の何れか一項に記載のプラズマ処理装置。
- 請求項1〜4の何れか一項に記載のプラズマ処理装置を用いたプラズマ処理方法であって、
前記チャンバ内でプラズマを生成するために前記高周波電源から高周波電力を供給する工程と、
前記プラズマの生成中に前記直流電源装置から周期的に前記パルス状の負極性の直流電圧を前記上部電極に印加する工程と、
を含み、
前記直流電源装置の出力電圧は、繰り返される周期の各々における第1の期間では、前記パルス状の負極性の直流電圧であり、前記周期の各々における残りの第2の期間では、ゼロボルトである、
プラズマ処理方法。 - 前記プラズマを生成するために前記高周波電源によって生成される高周波電力は、前記周期において一定に維持される、請求項5に記載のプラズマ処理方法。
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JP2019009476A JP6960421B2 (ja) | 2019-01-23 | 2019-01-23 | プラズマ処理装置及びプラズマ処理方法 |
KR1020200004218A KR20200091811A (ko) | 2019-01-23 | 2020-01-13 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
TW109101319A TW202033059A (zh) | 2019-01-23 | 2020-01-15 | 電漿處理裝置及電漿處理方法 |
US16/743,788 US11062882B2 (en) | 2019-01-23 | 2020-01-15 | Plasma processing apparatus and plasma processing method |
CN202010041705.3A CN111477531A (zh) | 2019-01-23 | 2020-01-15 | 等离子体处理装置及等离子体处理方法 |
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JP2019009476A JP6960421B2 (ja) | 2019-01-23 | 2019-01-23 | プラズマ処理装置及びプラズマ処理方法 |
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US (1) | US11062882B2 (ja) |
JP (1) | JP6960421B2 (ja) |
KR (1) | KR20200091811A (ja) |
CN (1) | CN111477531A (ja) |
TW (1) | TW202033059A (ja) |
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JP4672456B2 (ja) | 2004-06-21 | 2011-04-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5466480B2 (ja) * | 2009-02-20 | 2014-04-09 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置および記憶媒体 |
KR20120022251A (ko) * | 2010-09-01 | 2012-03-12 | 삼성전자주식회사 | 플라즈마 식각방법 및 그의 장치 |
JP5977509B2 (ja) * | 2011-12-09 | 2016-08-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP5922218B2 (ja) * | 2012-02-20 | 2016-05-24 | 東京エレクトロン株式会社 | 電源システム及びプラズマ処理装置 |
JP6512962B2 (ja) * | 2014-09-17 | 2019-05-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6424120B2 (ja) * | 2015-03-23 | 2018-11-14 | 東京エレクトロン株式会社 | 電源システム、プラズマ処理装置及び電源制御方法 |
US10566177B2 (en) * | 2016-08-15 | 2020-02-18 | Applied Materials, Inc. | Pulse shape controller for sputter sources |
KR102626357B1 (ko) * | 2017-12-07 | 2024-01-16 | 램 리써치 코포레이션 | 반도체 rf 플라즈마 프로세싱을 위한 펄싱 내 rf 펄싱 |
US10555412B2 (en) * | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
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- 2020-01-15 US US16/743,788 patent/US11062882B2/en active Active
- 2020-01-15 CN CN202010041705.3A patent/CN111477531A/zh active Pending
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US20200234925A1 (en) | 2020-07-23 |
CN111477531A (zh) | 2020-07-31 |
JP2020119982A (ja) | 2020-08-06 |
KR20200091811A (ko) | 2020-07-31 |
TW202033059A (zh) | 2020-09-01 |
US11062882B2 (en) | 2021-07-13 |
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