JP6960260B2 - Substrate holding device and its manufacturing method - Google Patents

Substrate holding device and its manufacturing method Download PDF

Info

Publication number
JP6960260B2
JP6960260B2 JP2017125620A JP2017125620A JP6960260B2 JP 6960260 B2 JP6960260 B2 JP 6960260B2 JP 2017125620 A JP2017125620 A JP 2017125620A JP 2017125620 A JP2017125620 A JP 2017125620A JP 6960260 B2 JP6960260 B2 JP 6960260B2
Authority
JP
Japan
Prior art keywords
substrate
holding device
convex portion
convex portions
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017125620A
Other languages
Japanese (ja)
Other versions
JP2019009358A (en
Inventor
淳寿 岩渕
智浩 石野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Spark Plug Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Spark Plug Co Ltd filed Critical NGK Spark Plug Co Ltd
Priority to JP2017125620A priority Critical patent/JP6960260B2/en
Publication of JP2019009358A publication Critical patent/JP2019009358A/en
Application granted granted Critical
Publication of JP6960260B2 publication Critical patent/JP6960260B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

本発明は、半導体ウエハなどの基板を基体に吸着保持する基板保持装置及びその製造方法に関する。 The present invention relates to a substrate holding device for adsorbing and holding a substrate such as a semiconductor wafer on the substrate, and a method for manufacturing the same.

半導体製造装置は、例えば製造中の基板（例えば半導体ウエハ）を保持する基板保持装置を有する。当該基板保持装置は、例えば、保持対象となる基板を吸着させつつ保持するように構成された基体を有する。当該基体は、例えば、基板の保持面をなす多数の凸部（ピン）を有する。 The semiconductor manufacturing apparatus includes, for example, a substrate holding apparatus for holding a substrate (for example, a semiconductor wafer) being manufactured. The substrate holding device has, for example, a substrate configured to hold the substrate to be held while adsorbing it. The substrate has, for example, a large number of protrusions (pins) forming a holding surface of the substrate.

例えば、特許文献１には、基板載置台の表面保護板及び基板載置台のクリーニング方法が開示されている。また、特許文献２には、基体の主面に微小突起部を形成し、当該微小突起部の頂面を板状試料の載置面とするサセプタ装置が開示されている。 For example, Patent Document 1 discloses a surface protection plate for a substrate mounting table and a method for cleaning the substrate mounting table. Further, Patent Document 2 discloses a susceptor device in which a micro-projection portion is formed on a main surface of a substrate and the top surface of the micro-projection portion is used as a mounting surface for a plate-shaped sample.

特開平１１−２１９９３９号公報Japanese Unexamined Patent Publication No. 11-219939 特開２００６−４９３５２号公報Japanese Unexamined Patent Publication No. 2006-49352

例えば、基板保持装置が半導体製造装置内に設けられることを考慮した場合、当該基板保持装置には、保持中の基板（半導体ウエハ）への高度なコンタミネーションの抑制が求められる。また、基板保持装置には、基板を正確な位置に保持することが求められる。 For example, considering that the substrate holding device is provided in the semiconductor manufacturing apparatus, the substrate holding device is required to suppress a high degree of contamination of the substrate (semiconductor wafer) being held. Further, the substrate holding device is required to hold the substrate at an accurate position.

例えば、半導体装置の製造中又は検査中においては、基板保持装置における基板の接触面に、基板の接触及び接触解除（基板の脱着）が繰り返し行われる。従って、基板の接触面をなす基体の複数の凸部と基板との接触による基板へのコンタミネーションが抑制されることが好ましい。 For example, during manufacturing or inspection of a semiconductor device, contact and release of contact (attachment / detachment of the substrate) of the substrate are repeatedly performed on the contact surface of the substrate in the substrate holding device. Therefore, it is preferable that contamination to the substrate due to contact between the plurality of convex portions of the substrate forming the contact surface of the substrate and the substrate is suppressed.

例えば、基体の凸部への基板の接触（及び真空吸引の開始及び停止）を繰り返した場合でも、基体からコンタミネーションの要因となるパーティクル（粉状粒子）が発生しないこと、また、その発生量が少ないことが好ましい。 For example, even when the substrate is repeatedly contacted with the convex portion of the substrate (and the start and stop of vacuum suction), particles (powdered particles) that cause contamination are not generated from the substrate, and the amount of particles generated is not generated. Is preferable.

本発明は、パーティクルの発生が大幅に抑制された基板保持装置及びその製造方法を提供することを目的とする。 An object of the present invention is to provide a substrate holding device in which the generation of particles is significantly suppressed and a method for manufacturing the same.

本発明による基板保持装置は、セラミックス焼結体からなる平板形状の基体と、当該基体の主面から突出し、頂面が基板の載置面をなす複数の凸部と、を有する基板保持装置であって、当該複数の凸部は、当該複数の凸部の側面に形成されかつ当該頂面から当該基体の当該主面に向かって線状に延びる複数のレーザ痕を有することを特徴とする。 The substrate holding device according to the present invention is a substrate holding device having a flat plate-shaped substrate made of a ceramic sintered body and a plurality of convex portions protruding from the main surface of the substrate and having a top surface forming a mounting surface of the substrate. The plurality of convex portions are formed on the side surfaces of the plurality of convex portions and have a plurality of laser marks extending linearly from the top surface toward the main surface of the substrate.

本発明の基板保持装置によれば、凸部の側面にはレーザ照射の痕であるレーザ痕が形成されている。この凸部の側面は、セラミックス焼結体がレーザ照射によって局所的にさらに焼結された表面である。この凸部の側面では、レーザが照射されていない他の部分に比べて、隣接する結晶粒子の一体化が進行している。従って、当該結晶粒子の凸部からの脱粒、すなわちパーティクルの発生が抑制される。これによって、保持中又は脱着時の基板へのコンタミネーションが抑制される。 According to the substrate holding device of the present invention, a laser mark, which is a mark of laser irradiation, is formed on the side surface of the convex portion. The side surface of the convex portion is a surface in which the ceramic sintered body is locally further sintered by laser irradiation. On the side surface of this convex portion, the integration of adjacent crystal particles is progressing as compared with the other portion not irradiated with the laser. Therefore, shedding of the crystal particles from the convex portion, that is, generation of particles is suppressed. As a result, contamination to the substrate during holding or attachment / detachment is suppressed.

また、当該複数のレーザ痕は、当該複数の凸部の当該側面において当該基体の主面まで延在していることが好ましい。レーザ痕が凸部の側面において凸部の頂面から基体の主面に至って形成されていることで、凸部からのパーティクルの発生が大幅に抑制される。 Further, it is preferable that the plurality of laser marks extend to the main surface of the substrate on the side surface of the plurality of convex portions. Since the laser marks are formed on the side surface of the convex portion from the top surface of the convex portion to the main surface of the substrate, the generation of particles from the convex portion is significantly suppressed.

また、当該基体は、当該主面において少なくとも当該複数の凸部の周囲に複数のレーザ痕を有することが好ましい。凸部の側面のみならず基体における凸部周辺にレーザ痕が有することで、凸部のみならず凸部の周囲の基体の主面からのパーティクルの発生が大幅に抑制される。 Further, it is preferable that the substrate has a plurality of laser marks on the main surface at least around the plurality of convex portions. Since the laser marks are present not only on the side surface of the convex portion but also around the convex portion on the substrate, the generation of particles not only from the convex portion but also from the main surface of the substrate around the convex portion is significantly suppressed.

また、本発明による基板保持装置は、セラミックス焼結体からなる平板形状の基体と、当該基体の主面から突出する複数の第１の凸部と、当該複数の第１の凸部の上面から突出し、頂面が基板の載置面をなす複数の第２の凸部と、を有する基板保持装置であって、当該複数の第２の凸部は、当該複数の第２の凸部の側面に形成されかつ当該頂面から当該第１の凸部の当該上面まで線状に延びる複数のレーザ痕を有することを特徴とする。 Further, the substrate holding device according to the present invention has a flat plate-shaped substrate made of a ceramic sintered body, a plurality of first convex portions projecting from the main surface of the substrate, and an upper surface of the plurality of first convex portions. A substrate holding device having a plurality of second convex portions having a protrusion and a top surface forming a mounting surface of the substrate, wherein the plurality of second convex portions are side surfaces of the plurality of second convex portions. It is characterized by having a plurality of laser marks formed on the surface of the surface and extending linearly from the top surface to the upper surface of the first convex portion.

本発明による基板保持装置によれば、第１及び第２の凸部からなる２段構造の凸部が形成されている。また、基板の載置面に近い側の凸部である第２の凸部は側面にレーザ痕を有する。従って、凸部全体の強度を保ちつつ基板との接触面を縮小することができる。また、第２の凸部におけるパーティクルの発生が抑制される。 According to the substrate holding device according to the present invention, a convex portion having a two-stage structure composed of first and second convex portions is formed. Further, the second convex portion, which is a convex portion on the side close to the mounting surface of the substrate, has a laser mark on the side surface. Therefore, the contact surface with the substrate can be reduced while maintaining the strength of the entire convex portion. In addition, the generation of particles in the second convex portion is suppressed.

また、当該複数の第１の凸部は、当該複数の第１の凸部の当該上面に複数のレーザ痕を有することが好ましい。第１の凸部の上面にレーザ痕を有することで、第１の凸部の上面からのパーティクルの発生が大幅に抑制される。 Further, it is preferable that the plurality of first convex portions have a plurality of laser marks on the upper surface of the plurality of first convex portions. By having the laser mark on the upper surface of the first convex portion, the generation of particles from the upper surface of the first convex portion is significantly suppressed.

また、当該複数の第１の凸部は、当該複数の第１の凸部の側面に線状に延びる複数のレーザ痕を有することが好ましい。レーザ痕が第１の凸部の側面まで延在していることで、第１の凸部からのパーティクルの発生が大幅に抑制される。 Further, it is preferable that the plurality of first convex portions have a plurality of laser marks extending linearly on the side surfaces of the plurality of first convex portions. Since the laser mark extends to the side surface of the first convex portion, the generation of particles from the first convex portion is significantly suppressed.

また、当該基体は、当該主面において少なくとも当該複数の第１の凸部の周囲にレーザ痕を有することが好ましい。レーザ痕が基体の主面にまで形成されることで、第１及び第２の凸部のみならず当該凸部の周囲の基体の主面からのパーティクルの発生が大幅に抑制される。 Further, it is preferable that the substrate has laser marks on the main surface at least around the plurality of first convex portions. By forming the laser marks up to the main surface of the substrate, the generation of particles not only from the first and second convex portions but also from the main surface of the substrate around the convex portions is significantly suppressed.

また、本発明による基板保持装置の製造方法は、セラミックス焼結体からなる平板形状の基体の上面にレーザ光を照射して当該基体の当該上面よりも低い位置に主面を形成し、当該主面から突出しかつ各々の側面に複数のレーザ痕を有する複数の凸部を形成する工程を含むことを特徴とする。 Further, in the method for manufacturing a substrate holding device according to the present invention, the upper surface of a flat plate-shaped substrate made of a ceramic sintered body is irradiated with laser light to form a main surface at a position lower than the upper surface of the substrate, and the main surface is formed. It is characterized by including a step of forming a plurality of convex portions projecting from a surface and having a plurality of laser marks on each side surface.

本発明による基板保持装置の製造方法によれば、凸部をレーザ光の照射によって形成する。これによって、凸部の表面（例えば側面）における原料粒子の脱離を抑制することができる。また、凸部を容易に微小化することができ、基板との接触面積を容易に縮小することができる。従って、パーティクルの発生が大幅に抑制される。 According to the method for manufacturing a substrate holding device according to the present invention, a convex portion is formed by irradiating a laser beam. Thereby, the detachment of the raw material particles on the surface (for example, the side surface) of the convex portion can be suppressed. In addition, the convex portion can be easily miniaturized, and the contact area with the substrate can be easily reduced. Therefore, the generation of particles is significantly suppressed.

また、当該複数の凸部を形成する工程は、当該基体の上面にレーザ光を照射して側面に複数のレーザ痕を有する複数の第１の凸部を形成する工程と、当該第１の凸部の上面にレーザ光を照射して側面に複数のレーザ痕を有する複数の第２の凸部を形成する工程と、を含む。凸部を２段階で形成することで、凸部の剛性が増し、安定した基板保持を行うことができる。 Further, the steps of forming the plurality of convex portions include a step of irradiating the upper surface of the substrate with a laser beam to form a plurality of first convex portions having a plurality of laser marks on the side surfaces, and a step of forming the first convex portion. forming a plurality of second convex portions having a plurality of laser marks on the sides on the upper surface of the part is irradiated with a laser beam, the including. By forming the convex portion in two stages, the rigidity of the convex portion is increased, and stable substrate holding can be performed.

また、本発明による基板保持装置の製造方法は、セラミックス焼結体からなる平板形状の基体の上面に、各々が互いに離間して島状に配列された複数のマスク部からなるマスクを形成する工程と、当該基体の上面に当該マスクを介してブラスト加工を行って当該基体の当該上面よりも低い位置に主面を形成し、当該主面から突出する複数の第１の凸部を形成する工程と、当該マスクを除去する工程と、当該複数の第１の凸部の上面にレーザ光を照射して当該複数の第１の凸部の各々を部分的に除去し、側面に複数のレーザ痕を有する第２の凸部を形成する工程と、を含むことを特徴とする。 Further, the method for manufacturing a substrate holding device according to the present invention is a step of forming a mask composed of a plurality of mask portions arranged in an island shape on the upper surface of a flat plate-shaped substrate made of a ceramics sintered body, each separated from each other. A step of blasting the upper surface of the substrate via the mask to form a main surface at a position lower than the upper surface of the substrate and forming a plurality of first convex portions protruding from the main surface. And the step of removing the mask, and irradiating the upper surface of the plurality of first convex portions with a laser beam to partially remove each of the plurality of first convex portions, and a plurality of laser marks on the side surface. It is characterized by including a step of forming a second convex portion having the above.

本発明による基板保持装置の製造方法によれば、ブラスト加工によって基体の上面を除去して主面及び第１の凸部を形成した後、第２の凸部をレーザ光の照射によって形成する。これによって、パーティクルの発生が抑制された基板保持装置を短時間で作製することができる。 According to the method for manufacturing a substrate holding device according to the present invention, the upper surface of the substrate is removed by blasting to form a main surface and a first convex portion, and then a second convex portion is formed by irradiation with a laser beam. As a result, it is possible to manufacture a substrate holding device in which the generation of particles is suppressed in a short time.

また、当該基板保持装置の製造方法は、当該基体の当該上面を研磨する工程を含むことが好ましい。基体の上面、すなわち基板との接触面を研磨することで、基板との接触面が高度に平坦化され、パーティクルの発生が抑制される。 Further, the method for manufacturing the substrate holding device preferably includes a step of polishing the upper surface of the substrate. By polishing the upper surface of the substrate, that is, the contact surface with the substrate, the contact surface with the substrate is highly flattened and the generation of particles is suppressed.

また、当該基板保持装置の製造方法は、当該基体の当該主面を研磨する工程を含むことが好ましい。ブラスト加工を行った面を研磨することで、当該ブラスト加工された面におけるパーティクルの発生が抑制される。 Moreover, it is preferable that the manufacturing method of the substrate holding device includes a step of polishing the main surface of the substrate. By polishing the blasted surface, the generation of particles on the blasted surface is suppressed.

実施例１に係る基板保持装置の斜視図。The perspective view of the substrate holding apparatus which concerns on Example 1. FIG. 実施例１に係る基板保持装置の上面図。Top view of the substrate holding device according to the first embodiment. 実施例１に係る基板保持装置の断面図。FIG. 5 is a cross-sectional view of the substrate holding device according to the first embodiment. 実施例１に係る基板保持装置の製造中における基体の断面図。FIG. 3 is a cross-sectional view of a substrate during manufacturing of the substrate holding device according to the first embodiment. 実施例１に係る基板保持装置の製造中における基体の断面図。FIG. 3 is a cross-sectional view of a substrate during manufacturing of the substrate holding device according to the first embodiment. 実施例１に係る基板保持装置の製造中における基体の断面図。FIG. 3 is a cross-sectional view of a substrate during manufacturing of the substrate holding device according to the first embodiment. 実施例１に係る基板保持装置の製造中における基体の断面図。FIG. 3 is a cross-sectional view of a substrate during manufacturing of the substrate holding device according to the first embodiment. 実施例１に係る基板保持装置の凸部の模式的な上面図。The schematic top view of the convex part of the substrate holding apparatus which concerns on Example 1. FIG. 実施例１に係る基板保持装置における凸部近傍の主面の観察画像。Observation image of the main surface in the vicinity of the convex portion in the substrate holding device according to the first embodiment. 実施例１に係る基板保持装置の凸部の模式的な側面図。The schematic side view of the convex part of the substrate holding apparatus which concerns on Example 1. FIG. 実施例１に係る基板保持装置における凸部の側面の観察画像。Observation image of the side surface of the convex portion in the substrate holding device according to the first embodiment. 実施例１の変形例に係る基板保持装置の凸部の模式的な側面図。The schematic side view of the convex part of the substrate holding apparatus which concerns on the modification of Example 1. FIG. 実施例２に係る基板保持装置の断面図。FIG. 5 is a cross-sectional view of the substrate holding device according to the second embodiment. 実施例２に係る基板保持装置の凸部の模式的な側面図。The schematic side view of the convex part of the substrate holding apparatus which concerns on Example 2. FIG. 実施例２に係る基板保持装置の製造中における基体の断面図。FIG. 3 is a cross-sectional view of a substrate during manufacturing of the substrate holding device according to the second embodiment. 実施例２に係る基板保持装置の製造中における基体の断面図。FIG. 3 is a cross-sectional view of a substrate during manufacturing of the substrate holding device according to the second embodiment. 実施例２に係る基板保持装置の製造中における基体の断面図。FIG. 3 is a cross-sectional view of a substrate during manufacturing of the substrate holding device according to the second embodiment. 実施例２に係る基板保持装置の製造中における基体の断面図。FIG. 3 is a cross-sectional view of a substrate during manufacturing of the substrate holding device according to the second embodiment. 実施例２に係る基板保持装置の製造中における基体の断面図。FIG. 3 is a cross-sectional view of a substrate during manufacturing of the substrate holding device according to the second embodiment. 実施例２に係る基板保持装置の製造中における基体の断面図。FIG. 3 is a cross-sectional view of a substrate during manufacturing of the substrate holding device according to the second embodiment. 実施例２に係る基板保持装置の製造中における基体の断面図。FIG. 3 is a cross-sectional view of a substrate during manufacturing of the substrate holding device according to the second embodiment. 実施例２に係る基板保持装置の基体のパーティクル量の計測結果を示す図。The figure which shows the measurement result of the particle amount of the substrate of the substrate holding apparatus which concerns on Example 2. FIG. 実施例２に係る基板保持装置の製造中における他の基体の断面図。FIG. 3 is a cross-sectional view of another substrate during manufacturing of the substrate holding device according to the second embodiment. 実施例２に係る基板保持装置の製造中における他の基体の断面図。FIG. 3 is a cross-sectional view of another substrate during manufacturing of the substrate holding device according to the second embodiment. 実施例２に係る基板保持装置の製造中における他の基体の断面図。FIG. 3 is a cross-sectional view of another substrate during manufacturing of the substrate holding device according to the second embodiment. 実施例２に係る基板保持装置の製造中における他の基体の断面図。FIG. 3 is a cross-sectional view of another substrate during manufacturing of the substrate holding device according to the second embodiment. 実施例２の変形例に係る基板保持装置の凸部の模式的な側面図。The schematic side view of the convex part of the substrate holding apparatus which concerns on the modification of Example 2. FIG.

以下、本発明の種々の実施例について詳細に説明する。 Hereinafter, various examples of the present invention will be described in detail.

図１は、実施例１に係る基板保持装置（以下、単に保持装置と称する）１０の斜視図である。保持装置１０は、保持対象となる基板に接触して当該基板保持する基体１１を有する。なお、図示していないが、保持装置１０は、真空吸引装置に接続されている。 FIG. 1 is a perspective view of a substrate holding device (hereinafter, simply referred to as a holding device) 10 according to the first embodiment. The holding device 10 has a base 11 that comes into contact with a substrate to be held and holds the substrate. Although not shown, the holding device 10 is connected to a vacuum suction device.

基体１１は、セラミックス焼結体からなり、平板形状を有する。基体１１は、例えば図１に示すように円板形状を有するが、上面視で多角形状又は楕円形状を有していてもよい。基体１１は、上面（表面）１１Ａ及び上面１１Ａとは反対側の下面（裏面）１１Ｂを有する。基体１１の上面１１Ａは、基板の載置面をなす。 The substrate 11 is made of a ceramic sintered body and has a flat plate shape. The substrate 11 has a disk shape as shown in FIG. 1, for example, but may have a polygonal shape or an elliptical shape when viewed from above. The substrate 11 has an upper surface (front surface) 11A and a lower surface (back surface) 11B opposite to the upper surface 11A. The upper surface 11A of the substrate 11 forms a mounting surface for the substrate.

本実施例においては、基体１１は、上面１１Ａよりも低い位置に主面ＰＬ１を有する。また、保持装置１０は、基体１１の主面ＰＬ１から突出する複数の凸部２０を有する。凸部２０の各々の頂面は、基体１１の上面１１Ａ、すなわち基板の載置面をなす。 In this embodiment, the substrate 11 has a main surface PL1 at a position lower than the upper surface 11A. Further, the holding device 10 has a plurality of convex portions 20 protruding from the main surface PL1 of the substrate 11. Each top surface of the convex portion 20 forms the upper surface 11A of the substrate 11, that is, the mounting surface of the substrate.

また、本実施例においては、主面ＰＬ１上には、主面ＰＬ１から突出する凸部であり、主面ＰＬ１上において凸部２０の全体を取り囲むように環状に設けられた環状部３０が設けられている。本実施例においては、環状部３０は、基体１１の主面ＰＬ１の外周部において途切れなく設けられている。環状部３０の頂面は基体１１の上面１１Ａをなす。 Further, in the present embodiment, the main surface PL1 is provided with an annular portion 30 which is a convex portion protruding from the main surface PL1 and is provided on the main surface PL1 in an annular shape so as to surround the entire convex portion 20. Has been done. In this embodiment, the annular portion 30 is provided seamlessly on the outer peripheral portion of the main surface PL1 of the substrate 11. The top surface of the annular portion 30 forms the upper surface 11A of the substrate 11.

また、本実施例においては、基体１１は、基体１１を貫通し、主面ＰＬ１と下面１１Ｂとを接続する貫通孔１１Ｃを有する。貫通孔１１Ｃは、下面１１Ｂ側の開口部（端部）を介して真空吸引装置に接続されている。 Further, in this embodiment, the substrate 11 has a through hole 11C that penetrates the substrate 11 and connects the main surface PL1 and the lower surface 11B. The through hole 11C is connected to the vacuum suction device via an opening (end) on the lower surface 11B side.

また、貫通孔１１Ｃにおける主面ＰＬ１側の開口部は、基体１１の外部に開放される。例えば、保持装置１０が半導体製造装置に用いられる場合、貫通孔１１Ｃの主面ＰＬ１側の開口部は、半導体製造装置のプロセスチャンバ内に露出される。 Further, the opening on the main surface PL1 side in the through hole 11C is opened to the outside of the substrate 11. For example, when the holding device 10 is used in a semiconductor manufacturing device, the opening on the main surface PL1 side of the through hole 11C is exposed in the process chamber of the semiconductor manufacturing device.

なお、真空吸引装置に接続される通気経路は、基体１１の下面１１Ｂから主面ＰＬ１に接続される場合に限定されない。例えば、真空吸引装置に接続される通気経路としての貫通孔１１Ｃに替えて、基体１１の主面ＰＬ１と基体１１の側面とを接続するように通気経路が形成されていてもよい。この場合、例えば、当該通気経路は、基体１１の側面に開口部を有し、当該開口部から基体１１の内部を基体１１の主面ＰＬ１に沿って（基体１１の横方向に）延在する部分を有する。また、当該通気経路は、基体１１の側面側の開口部を介して、当該真空吸引装置に接続される。 The ventilation path connected to the vacuum suction device is not limited to the case where the lower surface 11B of the substrate 11 is connected to the main surface PL1. For example, instead of the through hole 11C as the ventilation path connected to the vacuum suction device, the ventilation path may be formed so as to connect the main surface PL1 of the base 11 and the side surface of the base 11. In this case, for example, the ventilation path has an opening on the side surface of the base 11, and the inside of the base 11 extends from the opening along the main surface PL1 of the base 11 (in the lateral direction of the base 11). Has a part. Further, the ventilation path is connected to the vacuum suction device through the opening on the side surface side of the substrate 11.

図２は、保持装置１０の上面図である。また、図３は、保持装置１０の断面図である。なお、図３は、図２のIII−III線に沿った断面図である。図２及び図３に示すように、基体１１の主面ＰＬ１上には、複数の凸部２０が設けられている。また、主面ＰＬ１の外周部には、凸部２０を囲むように環状部３０が設けられている。 FIG. 2 is a top view of the holding device 10. Further, FIG. 3 is a cross-sectional view of the holding device 10. Note that FIG. 3 is a cross-sectional view taken along the line III-III of FIG. As shown in FIGS. 2 and 3, a plurality of convex portions 20 are provided on the main surface PL1 of the substrate 11. Further, an annular portion 30 is provided on the outer peripheral portion of the main surface PL1 so as to surround the convex portion 20.

なお、凸部２０の各々は、三角格子状、正方格子状などのそのほかの態様で規則的に配置されるほか、周方向または径方向に局所的に疎密の差が生じるように局所的に不規則的に配置されてもよい。 In addition, each of the convex portions 20 is regularly arranged in other modes such as a triangular lattice shape and a square lattice shape, and is locally non-locally formed so as to cause a local difference in density in the circumferential direction or the radial direction. It may be arranged regularly.

また、本実施例においては、基体１１の主面ＰＬ１には、貫通孔１１Ｃの開口部が設けられている。本実施例においては、主面ＰＬ１の中央領域に貫通孔１１Ｃの開口部が５つ設けられている。なお、貫通孔１１Ｃの個数、形状及び配置構成は、図２に示す場合に限定されない。 Further, in this embodiment, the main surface PL1 of the substrate 11 is provided with an opening of the through hole 11C. In this embodiment, five openings of through holes 11C are provided in the central region of the main surface PL1. The number, shape, and arrangement of the through holes 11C are not limited to those shown in FIG.

図３に、保持装置１０の保持対象となる基板Ｗを二点鎖線で示した。基板Ｗは、例えば半導体ウエハである。例えば、基板Ｗは、搬送装置（図示せず）によって搬送され、その底面が凸部２０の頂面及び環状部３０の頂面に配置される。 In FIG. 3, the substrate W to be held by the holding device 10 is shown by a chain double-dashed line. The substrate W is, for example, a semiconductor wafer. For example, the substrate W is transported by a transport device (not shown), and its bottom surface is arranged on the top surface of the convex portion 20 and the top surface of the annular portion 30.

なお、本実施例においては、環状部３０は、基板Ｗが載置された場合に環状部３０の内側の領域が閉じた空間を形成するような形状及びサイズを有する。例えば、図２に示すように環状部３０が円環状に形成され、円板形状の基板Ｗを保持装置１０の保持対象とする場合、環状部３０は、基板Ｗの外径よりも小さな内径を有する。 In this embodiment, the annular portion 30 has a shape and size such that when the substrate W is placed, the inner region of the annular portion 30 forms a closed space. For example, as shown in FIG. 2, when the annular portion 30 is formed in an annular shape and the disk-shaped substrate W is to be held by the holding device 10, the annular portion 30 has an inner diameter smaller than the outer diameter of the substrate W. Have.

基板Ｗが基体１１の上面１１Ａに載置された場合、基体１１の主面ＰＬ１と基板Ｗの底面との間における環状部３０の内側領域は、貫通孔１１Ｃを介して真空吸引装置に接続された閉空間ＳＰを形成する。この閉空間ＳＰは、貫通孔１１Ｃを介して接続された真空吸引装置が動作することで真空化（負圧化）される。これによって基板Ｗは基体１１に吸着される。 When the substrate W is placed on the upper surface 11A of the substrate 11, the inner region of the annular portion 30 between the main surface PL1 of the substrate 11 and the bottom surface of the substrate W is connected to the vacuum suction device via the through hole 11C. A closed space SP is formed. This closed space SP is evacuated (negative pressure) by operating a vacuum suction device connected via the through hole 11C. As a result, the substrate W is adsorbed on the substrate 11.

換言すれば、本実施例においては、基体１１の貫通孔１１Ｃは、真空吸引装置に接続され、空間ＳＰ内の空気を吸引する吸引路として機能する。また、貫通孔１１Ｃにおける主面ＰＬ１側の開口部は、基板Ｗを基体１１の上面１１Ａに吸引する吸引力を生成する吸引部として機能する。 In other words, in this embodiment, the through hole 11C of the substrate 11 is connected to the vacuum suction device and functions as a suction path for sucking the air in the space SP. Further, the opening on the main surface PL1 side in the through hole 11C functions as a suction portion for generating a suction force for sucking the substrate W to the upper surface 11A of the substrate 11.

［保持装置１０の製造方法］
図４Ａ〜図４Ｄを用いて、保持装置１０の製造方法、特に基体１１の製造方法について説明する。図４Ａ〜図４Ｄは、それぞれ、保持装置１０の各製造工程中における基体１１Ｐの断面図を示している。なお、図４Ａ〜図４Ｄは、それぞれ各工程中の基体１１Ｐの図３と同様の断面図である。 [Manufacturing method of holding device 10]
A method for manufacturing the holding device 10, particularly a method for manufacturing the substrate 11, will be described with reference to FIGS. 4A to 4D. 4A to 4D show cross-sectional views of the substrate 11P during each manufacturing process of the holding device 10, respectively. 4A to 4D are cross-sectional views similar to those in FIG. 3 of the substrate 11P in each step.

［基体１１Ｐの研磨］
図４Ａ及び図４Ｂは、それぞれ、基体１１となるセラミック基体（以下、基体と称する）１１Ｐにおける上面１１Ａの研磨工程前後の断面図である。まず、セラミックス焼結体からなる平板形状の基体１１Ｐを準備する（図４Ａ）。本実施例においては、基体１１Ｐとしては、炭化珪素の粉末を含む原料粉末を焼成してなる焼結体を準備した。 [Polishing of the substrate 11P]
4A and 4B are cross-sectional views of the upper surface 11A of the ceramic substrate (hereinafter referred to as the substrate) 11P serving as the substrate 11 before and after the polishing step, respectively. First, a flat plate-shaped substrate 11P made of a ceramic sintered body is prepared (FIG. 4A). In this example, as the substrate 11P, a sintered body obtained by firing raw material powder containing silicon carbide powder was prepared.

基体１１Ｐの原料粉末としては、例えば高純度（例えば純度９７％以上）の炭化珪素粉末、必要に応じてこれに適量の焼結助剤が添加された混合原料粉末が用いられる。そのほか、窒化アルミニウム粉末、アルミナ粉末等、他のセラミックス粉末が原料粉末として用いられてもよい。 As the raw material powder of the substrate 11P, for example, high-purity (for example, purity of 97% or more) silicon carbide powder, and if necessary, a mixed raw material powder to which an appropriate amount of a sintering aid is added are used. In addition, other ceramic powders such as aluminum nitride powder and alumina powder may be used as raw material powders.

次に、基体１１Ｐの上面（素材面）１１ＡＰを研磨する（図４Ｂ）。本実施例においては、基体１１Ｐの上面１１ＡＰにラップ加工を行った。これによって、基体１１Ｐの上面１１ＡＰは、研磨（研削）された研磨面となる。これによって、基体１１の上面１１Ａが形成される。 Next, the upper surface (material surface) 11AP of the substrate 11P is polished (FIG. 4B). In this example, the upper surface 11AP of the substrate 11P was wrapped. As a result, the upper surface 11AP of the substrate 11P becomes a polished (ground) polished surface. As a result, the upper surface 11A of the substrate 11 is formed.

なお、この基体１１Ｐの上面１１ＡＰを研磨する工程は、後述する凸部２０及び環状部３０を形成する工程の後に行ってもよい。 The step of polishing the upper surface 11AP of the substrate 11P may be performed after the step of forming the convex portion 20 and the annular portion 30 described later.

［凸部２０及び環状部３０の形成］
次に、図４Ｃに示すように、基体１１Ｐの上面１１Ａにレーザ光ＬＢを照射し、基体１１Ｐの上面１１Ａを部分的に除去する。これによって、基体１１Ｐの上面１１Ａよりも低い位置に基体１１Ｐの主面ＰＬ１を形成する。また、除去されない部分は、主面ＰＬ１から突出した複数の凸部２０及び環状部３０となる。なお、図４Ｃは、凸部２０及び環状部３０が形成された基体１１Ｐの断面図である。 [Formation of convex portion 20 and annular portion 30]
Next, as shown in FIG. 4C, the upper surface 11A of the substrate 11P is irradiated with the laser beam LB to partially remove the upper surface 11A of the substrate 11P. As a result, the main surface PL1 of the base 11P is formed at a position lower than the upper surface 11A of the base 11P. Further, the portions that are not removed are a plurality of convex portions 20 and an annular portion 30 that protrude from the main surface PL1. Note that FIG. 4C is a cross-sectional view of the substrate 11P on which the convex portion 20 and the annular portion 30 are formed.

本実施例においては、レーザ光ＬＢを走査して基体１１Ｐの上面１１Ａに照射した。また、そして、基体１１Ｐの上面１１Ａにおける凸部２０及び環状部３０となる部分以外の領域にレーザ光ＬＢを照射した。また、レーザ光ＬＢが照射されない部分を円形にかつ島状に設け、凸部２０として、錐台形状の突起を形成した。 In this embodiment, the laser beam LB was scanned and the upper surface 11A of the substrate 11P was irradiated. Further, the region other than the convex portion 20 and the annular portion 30 on the upper surface 11A of the substrate 11P was irradiated with the laser beam LB. Further, the portion not irradiated with the laser beam LB was provided in a circular shape and an island shape, and a cone-shaped protrusion was formed as the convex portion 20.

［貫通孔１１Ｃの形成］
次に、基体１１Ｐの主面ＰＬ１から基体１１Ｐの下面１１Ｂに至る貫通孔１１Ｃを形成する。これによって保持装置１０の基体１１が形成される（図４Ｄ）。本実施例においては、基体１１Ｐの主面ＰＬ１から下面１１Ｂに至る５つの円柱状の穴を形成することで、基体１１Ｐに貫通孔１１Ｃを形成した。このようにして、保持装置１０を作製することができる。 [Formation of through hole 11C]
Next, a through hole 11C extending from the main surface PL1 of the substrate 11P to the lower surface 11B of the substrate 11P is formed. As a result, the base 11 of the holding device 10 is formed (FIG. 4D). In this embodiment, through holes 11C are formed in the base 11P by forming five columnar holes from the main surface PL1 of the base 11P to the lower surface 11B. In this way, the holding device 10 can be manufactured.

図５Ａは、凸部２０の模式的な上面図である。図５Ｂは、凸部２０の近傍の主面ＰＬ１の走査型電子顕微鏡（Scanning Electron Microscope：SEM）による観察画像（ＳＥＭ像）である。また、図６Ａは、凸部２０の模式的な側面図である。また、図６Ｂは、凸部２０の側面２０ＳのＳＥＭ像である。なお、図５Ａは、図２における破線で囲まれた部分を拡大して示す図である。図５Ａ及び図５Ｂ、並びに図６Ａ及び図６Ｂを用いて、凸部２０の構造について説明する。 FIG. 5A is a schematic top view of the convex portion 20. FIG. 5B is an observation image (SEM image) of the main surface PL1 in the vicinity of the convex portion 20 by a scanning electron microscope (SEM). Further, FIG. 6A is a schematic side view of the convex portion 20. Further, FIG. 6B is an SEM image of the side surface 20S of the convex portion 20. Note that FIG. 5A is an enlarged view showing a portion surrounded by a broken line in FIG. 2. The structure of the convex portion 20 will be described with reference to FIGS. 5A and 5B, and FIGS. 6A and 6B.

本実施例においては、凸部２０の各々は、基板Ｗの載置面（基体１１の上面１１Ａ）をなす頂面２０Ｔと、頂面２０Ｔと基体１１の主面ＰＬ１との間の側面２０Ｓとを有する。 In this embodiment, each of the convex portions 20 has a top surface 20T forming a mounting surface (upper surface 11A of the base 11) of the substrate W and a side surface 20S between the top surface 20T and the main surface PL1 of the base 11. Has.

また、凸部２０の各々の側面２０Ｓには、線状にレーザ痕ＬＭが形成されている。本実施例においては、レーザ痕ＬＭは、凸部２０の側面２０Ｓの他、基体１１の主面ＰＬ１に形成されている。 Further, laser marks LM are linearly formed on each side surface 20S of the convex portion 20. In this embodiment, the laser scar LM is formed on the main surface PL1 of the substrate 11 in addition to the side surface 20S of the convex portion 20.

具体的には、本実施例においては、凸部２０の各々は、略円形状の頂面２０Ｔ及び傾斜した側面２０Ｓからなり、全体として略円錐台形状を有する。また、凸部２０の各々は、例えば図４Ｃに示すように、レーザ光ＬＢの照射によって形成される。従って、凸部２０の側面２０Ｓには、レーザ光ＬＢの照射痕が形成される。 Specifically, in this embodiment, each of the convex portions 20 is composed of a substantially circular top surface 20T and an inclined side surface 20S, and has a substantially truncated cone shape as a whole. Further, each of the convex portions 20 is formed by irradiation with laser light LB, for example, as shown in FIG. 4C. Therefore, an irradiation mark of the laser beam LB is formed on the side surface 20S of the convex portion 20.

また、本実施例においては、主面ＰＬ１及び凸部２０は、レーザ光ＬＢを線状に走査して照射し、凸部２０の領域で照射を停止する（照射を避ける）ことで形成した。従って、レーザ痕ＬＢは、図５Ａ及び図６Ａに示すように、主面ＰＬ１上において線状にかつ各々が整列するように複数本形成される。また、レーザ痕ＬＭは、凸部２０の頂面２０Ｔから基体１１の主面ＰＬ１に向かって線状に延びるように複数本形成される。 Further, in this embodiment, the main surface PL1 and the convex portion 20 are formed by linearly scanning and irradiating the laser beam LB and stopping the irradiation (avoiding irradiation) in the region of the convex portion 20. Therefore, as shown in FIGS. 5A and 6A, a plurality of laser marks LB are formed linearly and aligned with each other on the main surface PL1. Further, a plurality of laser marks LM are formed so as to extend linearly from the top surface 20T of the convex portion 20 toward the main surface PL1 of the substrate 11.

レーザ痕ＬＭは、レーザ光ＬＢの発振源及びスポット径、並びにレーザ光ＬＢの照射時間及び照射回数などによって種々の形状を取り得る。例えば、図５Ａ及び図６Ａに示すように、レーザ痕ＬＭは、微細な鱗状（波状）の凹凸がレーザ光ＬＢの走査軌跡に従って線状に連なるように形成される。しかし、上記したようなレーザ光ＬＢの照射条件によっては、レーザ痕ＬＭは、例えば、球状（ドット状）の凹部が連なるような形状を有し得る。 The laser scar LM can take various shapes depending on the oscillation source and spot diameter of the laser beam LB, the irradiation time and the number of irradiations of the laser beam LB, and the like. For example, as shown in FIGS. 5A and 6A, the laser scar LM is formed so that fine scale-like (wavy) irregularities are linearly connected according to the scanning locus of the laser beam LB. However, depending on the irradiation conditions of the laser beam LB as described above, the laser scar LM may have, for example, a shape in which spherical (dot-shaped) recesses are continuous.

例えば、本実施例においては、図５Ｂに示すように、基体１１の主面ＰＬ１における凸部２０の周囲には、鱗状の凹凸の形態をとったレーザ痕ＬＭが形成されている。また、図６Ｂに示すように、凸部２０の側面２０Ｓには、線状の凹部の形態をとったレーザ痕ＬＭが形成されている。レーザ痕ＬＭは、レーザ光ＬＢの照射痕であり、図５Ｂ又は図６Ｂに示すレーザ痕ＬＭの表面形状は一例に過ぎない。すなわち、レーザ痕ＬＭの態様はレーザ光ＬＢの照射態様によって変化し得る。 For example, in this embodiment, as shown in FIG. 5B, a laser mark LM in the form of scale-like unevenness is formed around the convex portion 20 on the main surface PL1 of the substrate 11. Further, as shown in FIG. 6B, a laser mark LM in the form of a linear concave portion is formed on the side surface 20S of the convex portion 20. The laser mark LM is an irradiation mark of the laser beam LB, and the surface shape of the laser mark LM shown in FIG. 5B or FIG. 6B is only an example. That is, the mode of the laser scar LM can change depending on the mode of irradiation of the laser beam LB.

凸部２０の側面２０Ｓ、すなわち凸部２０の表面がレーザ痕ＬＭを有することで、凸部２０からのパーティクルの発生が大幅に抑制される。具体的には、セラミックス焼結体は、レーザ光ＬＢが照射されると、そのセラミックス材料が部分的に再度焼結される。 Since the side surface 20S of the convex portion 20, that is, the surface of the convex portion 20 has the laser mark LM, the generation of particles from the convex portion 20 is significantly suppressed. Specifically, when the ceramic sintered body is irradiated with the laser beam LB, the ceramic material is partially resintered.

すなわち、このレーザ痕ＬＭを有する凸部２０の側面２０Ｓは、レーザ光ＬＢの照射によって局所的にさらに焼結（再焼結）されたセラミックス焼結体の表面である。この凸部２０の側面２０Ｓでは、レーザ光ＬＢが照射されていない他の部分に比べて、隣接する結晶粒子の一体化が進行している。従って、結晶粒子が脱離（脱粒）しにくくなる。これによって、凸部２０からの当該結晶粒子の脱離、すなわちコンタミネーションの要因となるパーティクルの発生が抑制される。 That is, the side surface 20S of the convex portion 20 having the laser mark LM is the surface of the ceramic sintered body that has been locally further sintered (resintered) by irradiation with the laser light LB. On the side surface 20S of the convex portion 20, the integration of adjacent crystal particles is progressing as compared with other portions that are not irradiated with the laser beam LB. Therefore, the crystal particles are less likely to be desorbed (degreased). As a result, the detachment of the crystal particles from the convex portion 20, that is, the generation of particles that cause contamination is suppressed.

また、レーザ光ＬＢの照射によって凸部２０を形成する場合、凸部２０のサイズを容易に微小化することができる。例えば、レーザ光ＬＢの照射によって、凸部２０の各々の直径（最大幅）を０．０５ｍｍ程度にすることができる。 Further, when the convex portion 20 is formed by irradiation with the laser beam LB, the size of the convex portion 20 can be easily reduced. For example, the diameter (maximum width) of each of the convex portions 20 can be set to about 0.05 mm by irradiating the laser beam LB.

また、レーザ光ＬＢによって表面を再焼結しつつ凸部２０を形成する場合、凸部２０に比較的高い強度を持たせることができる。従って、レーザ光ＬＢの照射によって、高い自由度で高強度の凸部２０を形成することができる。 Further, when the convex portion 20 is formed while the surface is re-sintered by the laser beam LB, the convex portion 20 can have a relatively high intensity. Therefore, the convex portion 20 having a high intensity can be formed with a high degree of freedom by irradiating the laser beam LB.

なお、凸部２０の剛性を考慮すると、凸部２０の直径は０．０１ｍｍ以上であることが好ましい。一方、パーティクルの発生を抑制するために基板Ｗとの接触面積を縮小することを考慮すると、凸部２０の直径は０．２ｍｍ以下であることが好ましい。従って、凸部２０の直径は、０．０１ｍｍ〜０．２ｍｍの範囲内であることが好ましい。 Considering the rigidity of the convex portion 20, the diameter of the convex portion 20 is preferably 0.01 mm or more. On the other hand, the diameter of the convex portion 20 is preferably 0.2 mm or less in consideration of reducing the contact area with the substrate W in order to suppress the generation of particles. Therefore, the diameter of the convex portion 20 is preferably in the range of 0.01 mm to 0.2 mm.

また、基板Ｗとの接触部である凸部２０の頂面２０Ｔは、研磨面であることが好ましい。従って、保持装置１０を製造する場合、基体１１の上面を研磨する（例えば図４Ｂ）ことが好ましい。 Further, the top surface 20T of the convex portion 20 which is the contact portion with the substrate W is preferably a polished surface. Therefore, when manufacturing the holding device 10, it is preferable to polish the upper surface of the substrate 11 (for example, FIG. 4B).

また、本実施例においては、基体１１は、主面ＰＬ１にレーザ痕ＬＭを有する。従って、基板Ｗの底面（裏面）に面する主面ＰＬ１の領域からのパーティクルの発生が大幅に抑制される。 Further, in this embodiment, the substrate 11 has a laser mark LM on the main surface PL1. Therefore, the generation of particles from the region of the main surface PL1 facing the bottom surface (back surface) of the substrate W is significantly suppressed.

なお、本実施例においては、レーザ痕ＬＭが凸部２０の側面２０Ｓから基体１１の主面ＰＬ１、すなわち凸部２０の底面に延在している場合について説明した。しかし、レーザ痕ＬＭは、基体１１の主面ＰＬ１に至っている場合に限定されない。レーザ痕ＬＭは、少なくとも凸部２０の頂面２０Ｔから基体１１の主面ＰＬ１に向かって設けられていればよい。 In this embodiment, the case where the laser scar LM extends from the side surface 20S of the convex portion 20 to the main surface PL1 of the substrate 11, that is, the bottom surface of the convex portion 20 has been described. However, the laser scar LM is not limited to the case where it reaches the main surface PL1 of the substrate 11. The laser mark LM may be provided at least from the top surface 20T of the convex portion 20 toward the main surface PL1 of the substrate 11.

また、本実施例においては、基体１１の主面ＰＬ１にレーザ痕ＬＭが形成される場合について説明した。しかし、レーザ痕ＬＭは、基体１１の主面ＰＬ１に形成されていなくてもよい。 Further, in this embodiment, the case where the laser scar LM is formed on the main surface PL1 of the substrate 11 has been described. However, the laser scar LM may not be formed on the main surface PL1 of the substrate 11.

図７は、実施例１の変形例に係る保持装置１０Ａの凸部２０Ａの模式的な側面図である。本変形例においては、凸部２０Ａは、頂面２０Ｔから側面２０Ｓに向かう線状のレーザ痕ＬＭを有するが、基体１１の主面ＰＬ１まで至っていない。また、レーザ痕ＬＭは基体１１の主面ＰＬ１には形成されていない。 FIG. 7 is a schematic side view of the convex portion 20A of the holding device 10A according to the modified example of the first embodiment. In this modification, the convex portion 20A has a linear laser mark LM extending from the top surface 20T to the side surface 20S, but does not reach the main surface PL1 of the substrate 11. Further, the laser scar LM is not formed on the main surface PL1 of the substrate 11.

例えば、基体１１の上面１１Ａを他の方法によって除去して主面ＰＬ１を形成し、凸部２０Ａをレーザ光ＬＢの照射によって形成してもよい。この場合、レーザ痕ＬＭは凸部２０Ａの側面２０Ｓのみに形成され、基体１１の主面ＰＬ１には形成されない。しかし、少なくとも凸部２０Ａの頂面２０Ｔに近い部分の側面２０Ｓにレーザ痕ＬＭが設けられていれば、基板Ｗの載置部分の近傍でのパーティクルの発生が抑制される。 For example, the upper surface 11A of the substrate 11 may be removed by another method to form the main surface PL1, and the convex portion 20A may be formed by irradiating the laser beam LB. In this case, the laser scar LM is formed only on the side surface 20S of the convex portion 20A, and is not formed on the main surface PL1 of the substrate 11. However, if the laser mark LM is provided on the side surface 20S of the convex portion 20A near the top surface 20T, the generation of particles in the vicinity of the mounting portion of the substrate W is suppressed.

なお、例えば、ブラスト加工によって主面ＰＬ１の大部分を形成する場合、レーザ光ＬＢの照射に比べて全体の加工時間が短くなる。 For example, when most of the main surface PL1 is formed by blasting, the total processing time is shorter than that of irradiation with laser light LB.

なお、凸部２０をレーザ光ＬＢによって形成する場合、レーザ痕ＬＭは、主面ＰＬ１における凸部２０の周囲に残存することとなる可能性が高い。また、少なくとも凸部２０の周囲をレーザ光ＬＢの照射によって加工することで、基板Ｗとの接触部の近傍におけるパーティクルの抑制効果が高くなる。従って、基体１１は、その主面ＰＬ１において少なくとも凸部２０の周囲に複数のレーザ痕ＬＭを有することが好ましい。 When the convex portion 20 is formed by the laser light LB, the laser mark LM is likely to remain around the convex portion 20 on the main surface PL1. Further, by processing at least the periphery of the convex portion 20 by irradiating the laser beam LB, the effect of suppressing particles in the vicinity of the contact portion with the substrate W is enhanced. Therefore, it is preferable that the substrate 11 has a plurality of laser marks LM around at least the convex portion 20 on the main surface PL1.

また、本実施例においては、保持装置１０が環状部３０及び貫通孔１１Ｃを有する場合について説明した。しかし、保持装置１０は、環状部３０及び貫通孔１１Ｃを有する場合に限定されない。 Further, in this embodiment, the case where the holding device 10 has the annular portion 30 and the through hole 11C has been described. However, the holding device 10 is not limited to the case where the annular portion 30 and the through hole 11C are provided.

例えば、保持装置１０は、凸部２０の頂面２０Ｔに基板Ｗを載置した際に基板Ｗを吸着させるような構成を有していればよい。例えば、保持装置１０は、静電気力によって基板Ｗを吸着させる構成を有していてもよく、この場合、保持装置１０は静電気力を生成する電極及び電源を有していればよい。 For example, the holding device 10 may have a configuration that attracts the substrate W when the substrate W is placed on the top surface 20T of the convex portion 20. For example, the holding device 10 may have a configuration in which the substrate W is attracted by an electrostatic force. In this case, the holding device 10 may have an electrode and a power source that generate an electrostatic force.

このように、本実施例においては、保持装置１０は、セラミックス焼結体からなる平板形状の基体１１と、基体１１の主面ＰＬ１から突出し、頂面２０Ｔが基板の載置面（基体１１の上面１１Ａ）をなす複数の凸部２０と、を有する。また、複数の凸部２０は、複数の凸部２０の側面２０Ｓに形成されかつ頂面２０Ｔから基体１１の主面ＰＬ１に向かって線状に延びる複数のレーザ痕ＬＭを有する。従って、パーティクルの発生が大幅に抑制された保持装置１０を提供することができる。 As described above, in the present embodiment, the holding device 10 protrudes from the flat plate-shaped substrate 11 made of the ceramic sintered body and the main surface PL1 of the substrate 11, and the top surface 20T is the mounting surface (of the substrate 11) of the substrate. It has a plurality of convex portions 20 forming an upper surface 11A). Further, the plurality of convex portions 20 have a plurality of laser marks LM formed on the side surface 20S of the plurality of convex portions 20 and extending linearly from the top surface 20T toward the main surface PL1 of the substrate 11. Therefore, it is possible to provide the holding device 10 in which the generation of particles is significantly suppressed.

また、本実施例においては、保持装置１０の製造方法として、セラミックス焼結体からなる平板形状の基体１１Ｐの上面１１Ａにレーザ光ＬＢを照射して基体１１Ｐの上面１１Ａよりも低い位置に主面ＰＬ１を形成し、主面ＰＬ１から突出しかつ各々の側面２０Ｓに複数のレーザ痕ＬＭを有する複数の凸部２０を形成する工程を含む。従って、パーティクルの発生が大幅に抑制された保持装置１０の製造方法を提供することができる。 Further, in this embodiment, as a method of manufacturing the holding device 10, the upper surface 11A of the flat plate-shaped substrate 11P made of a ceramic sintered body is irradiated with laser light LB, and the main surface is located at a position lower than the upper surface 11A of the substrate 11P. It includes a step of forming PL1 and forming a plurality of convex portions 20 protruding from the main surface PL1 and having a plurality of laser marks LM on each side surface 20S. Therefore, it is possible to provide a method for manufacturing the holding device 10 in which the generation of particles is significantly suppressed.

図８は、実施例２に係る基板保持装置（以下、単に保持装置と称する）４０の断面図である。保持装置４０は、基体４１の構成を除いては、保持装置１０と同様の構成を有する。基体４１は、基板Ｗの載置面をなす上面４１Ａ及び上面４１とは反対側の下面４１Ｂを有する。また、基体４１は、上面４１Ａよりも低い位置に主面ＰＬ１を有する。 FIG. 8 is a cross-sectional view of the substrate holding device (hereinafter, simply referred to as a holding device) 40 according to the second embodiment. The holding device 40 has the same configuration as the holding device 10 except for the configuration of the substrate 41. The substrate 41 has an upper surface 41A forming a mounting surface of the substrate W and a lower surface 41B opposite to the upper surface 41. Further, the substrate 41 has a main surface PL1 at a position lower than the upper surface 41A.

また、本実施例においては、保持装置４０は、基体４１の主面ＰＬ１上に２段構造の凸部５０を有する。図９は、凸部５０の模式的な側面図である。本実施例においては、凸部５０は、基体４１の主面ＰＬ１から突出し、上面５１Ｔ及び側面５１Ｓを有する複数の第１の凸部５１を有する。また、凸部５０は、第１の凸部５１の上面５１Ｔから突出し、頂面５２Ｔ及び側面５２Ｓを有する複数の第２の凸部５２を有する。 Further, in this embodiment, the holding device 40 has a convex portion 50 having a two-stage structure on the main surface PL1 of the substrate 41. FIG. 9 is a schematic side view of the convex portion 50. In this embodiment, the convex portion 50 has a plurality of first convex portions 51 protruding from the main surface PL1 of the substrate 41 and having an upper surface 51T and a side surface 51S. Further, the convex portion 50 has a plurality of second convex portions 52 protruding from the upper surface 51T of the first convex portion 51 and having a top surface 52T and a side surface 52S.

また、本実施例においては、第２の凸部５２は、頂面５２Ｔが基板Ｗの載置面（基体４１の上面４１Ａ）をなす。すなわち、本実施例においては、第２の凸部５２の頂面５２Ｔは、凸部５０の頂面である。 Further, in the present embodiment, the top surface 52T of the second convex portion 52 forms the mounting surface of the substrate W (the upper surface 41A of the substrate 41). That is, in this embodiment, the top surface 52T of the second convex portion 52 is the top surface of the convex portion 50.

また、複数の第２の凸部５２は、複数の第２の凸部５２の側面５２Ｓに形成されかつ頂面５２Ｔから第１の凸部５１の上面５１Ｔまで線状に延びる複数のレーザ痕ＬＭを有する。また、本実施例においては、第１の凸部５１は、第１の凸部５１の上面５１Ｔ及び側面５１Ｓに線状に延びる複数のレーザ痕ＬＭを有する。 Further, the plurality of second convex portions 52 are formed on the side surface 52S of the plurality of second convex portions 52, and the plurality of laser marks LM extending linearly from the top surface 52T to the upper surface 51T of the first convex portion 51. Has. Further, in the present embodiment, the first convex portion 51 has a plurality of laser marks LM extending linearly on the upper surface 51T and the side surface 51S of the first convex portion 51.

また、本実施例においては、基体４１は、主面ＰＬ１において少なくとも第１の凸部５１の周囲にレーザ痕ＬＭを有する。換言すれば、本実施例においては、レーザ痕ＬＭは、第２の凸部５２の側面５２Ｓから、第１の凸部５１の上面５１Ｔ及び側面５１Ｓを経て、基体４１の主面ＰＬ１に至って形成されている。 Further, in this embodiment, the substrate 41 has a laser mark LM around at least the first convex portion 51 on the main surface PL1. In other words, in this embodiment, the laser scar LM is formed from the side surface 52S of the second convex portion 52, through the upper surface 51T and the side surface 51S of the first convex portion 51, to the main surface PL1 of the substrate 41. Has been done.

［保持装置４０の製造方法］
次に、図１０Ａ〜図１０Ｇを用いて、保持装置４０の製造方法について説明する。図１０Ａ〜図１０Ｇは、それぞれ、保持装置４０の各製造工程中における基体４１Ｐの図８と同様の断面図である。 [Manufacturing method of holding device 40]
Next, a method of manufacturing the holding device 40 will be described with reference to FIGS. 10A to 10G. 10A to 10G are cross-sectional views similar to those in FIG. 8 of the substrate 41P in each manufacturing process of the holding device 40, respectively.

［基体４１Ｐの研磨］
図１０Ａ及び図１０Ｂは、それぞれ、基体４１となるセラミック基体（以下、基体と称する）４１Ｐにおける上面４１Ａの研磨工程前後の断面図である。まず、セラミックス焼結体からなる平板形状の基体４１Ｐを準備する（図１０Ａ）。本実施例においては、基体４１Ｐとしては、実施例１の基体１１Ｐと同様の焼結体を準備した。次に、基体４１Ｐの上面（素材面）４１ＡＰを研磨する（図１０Ｂ）。これによって、基体４１の上面４１Ａが研磨面として形成される。 [Polishing of Hypokeimenon 41P]
10A and 10B are cross-sectional views of the upper surface 41A of the ceramic substrate (hereinafter, referred to as a substrate) 41P serving as the substrate 41 before and after the polishing step, respectively. First, a flat plate-shaped substrate 41P made of a ceramic sintered body is prepared (FIG. 10A). In this example, as the substrate 41P, a sintered body similar to the substrate 11P of Example 1 was prepared. Next, the upper surface (material surface) 41AP of the substrate 41P is polished (FIG. 10B). As a result, the upper surface 41A of the substrate 41 is formed as a polished surface.

なお、この基体４１Ｐの上面４１ＡＰを研磨する工程は、後述する凸部５０及び環状部３０を形成する工程の後に行ってもよい。 The step of polishing the upper surface 41AP of the substrate 41P may be performed after the step of forming the convex portion 50 and the annular portion 30 described later.

［凸部５０及び環状部３０の形成］
次に、基体４１Ｐの上面４１Ａに、各々が互いに離間して島状に配列された複数のマスク部ＭＰからなるマスクＭＫを形成する（図１０Ｃ）。本実施例においては、凸部５０となる部分に円形状のマスク部ＭＰを有するようにパターニングされたレジストマスクを形成した。また、本実施例においては、マスクＭＫは、環状部３０となる部分にマスク部ＭＰを有するように形成した。 [Formation of convex portion 50 and annular portion 30]
Next, on the upper surface 41A of the substrate 41P, a mask MK composed of a plurality of mask portions MP, each of which is spaced apart from each other and arranged in an island shape, is formed (FIG. 10C). In this embodiment, a resist mask patterned so as to have a circular mask portion MP in the portion to be the convex portion 50 is formed. Further, in this embodiment, the mask MK is formed so as to have the mask portion MP in the portion to be the annular portion 30.

続いて、基体４１の上面４１ＡにマスクＭＫを介してブラスト加工を行う。これによって、基体４１の上面４１Ａよりも低い位置に主面ＰＬ１を形成し、主面ＰＬ１から突出する複数の第１の凸部５０Ｐ及び環状部３０を形成する（図１０Ｄ）。本実施例においては、マスクＭＫのマスク部ＭＰから露出した基体４１の上面４１Ａにブラスト粒子ＢＰを衝突させ、上面４１Ａを部分的に除去した。 Subsequently, the upper surface 41A of the substrate 41 is blasted via the mask MK. As a result, the main surface PL1 is formed at a position lower than the upper surface 41A of the substrate 41, and a plurality of first convex portions 50P and an annular portion 30 projecting from the main surface PL1 are formed (FIG. 10D). In this embodiment, the blast particles BP were made to collide with the upper surface 41A of the substrate 41 exposed from the mask portion MP of the mask MK, and the upper surface 41A was partially removed.

次に、マスクＭＫを除去し（図１０Ｅ）する。続いて、第１の凸部５０Ｐの上面にレーザ光ＬＢを照射して第１の凸部５０Ｐの各々を部分的に除去し、側面に複数のレーザ痕ＬＭを有する第２の凸部５２を形成する（図１０Ｆ）。本実施例においては、露出した第１の凸部５０Ｐの各々の上面、すなわちマスクＭＫに覆われていた部分の中央部を除いてレーザ光ＬＢを走査して照射した。 Next, the mask MK is removed (FIG. 10E). Subsequently, the upper surface of the first convex portion 50P is irradiated with the laser beam LB to partially remove each of the first convex portions 50P, and the second convex portion 52 having a plurality of laser marks LM on the side surface is formed. Form (Fig. 10F). In this embodiment, the laser beam LB was scanned and irradiated except for the upper surface of each of the exposed first convex portions 50P, that is, the central portion of the portion covered with the mask MK.

これによって、レーザ光ＬＢが照射された部分は、第１の凸部５０Ｐの上面からわずかに窪んだ段差部分となる。このわずかに窪んだ部分は、凸部５０における第１の凸部５１となる。また、レーザ光ＬＢが照射されていない残存部分は、基体４１Ｐの上面４１Ａが残存した凸部となり、これが凸部５０における第２の凸部５２となる。 As a result, the portion irradiated with the laser beam LB becomes a stepped portion slightly recessed from the upper surface of the first convex portion 50P. This slightly recessed portion becomes the first convex portion 51 in the convex portion 50. Further, the remaining portion not irradiated with the laser beam LB becomes a convex portion in which the upper surface 41A of the substrate 41P remains, and this becomes a second convex portion 52 in the convex portion 50.

なお、本実施例においては、第１及び第２の凸部５１及び５２として２段構造の円錐台形状の凸部を形成することで、凸部５０を形成した。 In this embodiment, the convex portion 50 is formed by forming a truncated cone-shaped convex portion having a two-stage structure as the first and second convex portions 51 and 52.

［貫通孔１１Ｃの形成］
次に、基体４１Ｐの主面ＰＬ１から基体４１Ｐの下面４１Ｂに至る貫通孔１１Ｃを形成する。これによって保持装置１０の基体４１が形成される（図１０Ｇ）。これ以降は、保持装置１０と同様の工程を経ることで、保持装置４０を作製することができる。 [Formation of through hole 11C]
Next, a through hole 11C extending from the main surface PL1 of the base 41P to the lower surface 41B of the base 41P is formed. As a result, the base 41 of the holding device 10 is formed (FIG. 10G). After that, the holding device 40 can be manufactured by going through the same steps as the holding device 10.

図１１は、保持装置４０に洗浄後のクリーンな基板Ｗを載置して真空吸着を行った後に基板Ｗの裏面に転写されたパーティクルの数量の計測結果を示す図である。なお、パーティクル数の計測は、トプコン社製のウエハ表面検査装置を用いて行った。 FIG. 11 is a diagram showing a measurement result of the number of particles transferred to the back surface of the substrate W after the clean substrate W after cleaning is placed on the holding device 40 and vacuum suction is performed. The number of particles was measured using a wafer surface inspection device manufactured by Topcon.

図１１の横軸はパーティクルの粒径（サイズ）を示し、縦軸は測定されたパーティクル数を示す。なお、本実施例における第２の凸部５２の直径は０．０５ｍｍとした。また、凸部５０を一段構造とし、その全体をブラスト加工によって形成し、また凸部５０の直径を０．２ｍｍとすることを除いては、保持装置４０と同様の工程を経て作製した基体を比較例として用意し、同様の計測実験を行った。 The horizontal axis of FIG. 11 shows the particle size (size) of the particles, and the vertical axis shows the number of measured particles. The diameter of the second convex portion 52 in this embodiment was set to 0.05 mm. Further, a substrate produced through the same steps as the holding device 40 except that the convex portion 50 has a one-stage structure, the entire convex portion 50 is formed by blasting, and the diameter of the convex portion 50 is 0.2 mm. It was prepared as a comparative example and the same measurement experiment was performed.

図１１に示すように、全てのパーティクル径において比較例よりもパーティクル数が減少したことがわかる。従って、レーザ光ＬＢの照射によって表面が改質（変質）され、パーティクルの発生が抑制されたことが確認できた。 As shown in FIG. 11, it can be seen that the number of particles was reduced in all particle diameters as compared with the comparative example. Therefore, it was confirmed that the surface was modified (altered) by the irradiation of the laser beam LB and the generation of particles was suppressed.

本実施例に示すように、２段構造の凸部５０を形成した場合、凸部５０の強度が増す。従って、パーティクルの発生が大幅に抑制された高剛性な凸部５０を有する保持装置４０を提供することができる。例えば、パーティクルの発生を抑制しつつ、安定して複数回の基板の脱着（基板の保持）を行うことができる。 As shown in this embodiment, when the convex portion 50 having a two-stage structure is formed, the strength of the convex portion 50 is increased. Therefore, it is possible to provide the holding device 40 having the highly rigid convex portion 50 in which the generation of particles is significantly suppressed. For example, it is possible to stably attach / detach the substrate (hold the substrate) a plurality of times while suppressing the generation of particles.

また、本実施例においては、保持装置４０の製造方法として、基体４１の上面４１Ａに、各々が互いに離間して島状に配列された複数のマスク部ＭＰからなるマスクＭＫを形成する工程と、基体４１の上面４１ＡにマスクＭＫを介してブラスト加工を行って基体４１の上面４１Ａよりも低い位置に主面ＰＬ１を形成し、主面ＰＬ１から突出する複数の第１の凸部５０Ｐを形成する工程とを有する。 Further, in the present embodiment, as a method of manufacturing the holding device 40, a step of forming a mask MK composed of a plurality of mask portions MP, each of which is separated from each other and arranged in an island shape, on the upper surface 41A of the substrate 41. The upper surface 41A of the base 41 is blasted via a mask MK to form a main surface PL1 at a position lower than the upper surface 41A of the base 41, and a plurality of first convex portions 50P protruding from the main surface PL1 are formed. Has a process.

また、保持装置４０の製造方法として、第１の凸部５０Ｐを形成した後、マスクＭＫを除去する工程と、複数の第１の凸部５０Ｐの上面にレーザ光ＬＢを照射して複数の第１の凸部５０Ｐの各々を部分的に除去し、側面５２Ｓに複数のレーザ痕ＬＭを有する第２の凸部５２を形成する工程と、を含む。従って、パーティクルの発生が大幅に抑制された高剛性な凸部５０を有する保持装置４０の製造方法を提供することができる。 Further, as a method for manufacturing the holding device 40, a step of removing the mask MK after forming the first convex portion 50P and a plurality of first projections by irradiating the upper surfaces of the plurality of first convex portions 50P with laser light LB. A step of partially removing each of the convex portions 50P of 1 to form a second convex portion 52 having a plurality of laser marks LM on the side surface 52S is included. Therefore, it is possible to provide a method for manufacturing the holding device 40 having the highly rigid convex portion 50 in which the generation of particles is significantly suppressed.

また、本実施例においても、基体４１における基板Ｗとの接触面である凸部５０の頂面、すなわち基体４１の上面４１Ａは研磨されることが好ましい。すなわち、図１０Ａ及び図１０Ｂに示すように、保持装置４０の製造方法として、基体４１の上面４１Ａを研磨する工程を含むことが好ましい。 Further, also in this embodiment, it is preferable that the top surface of the convex portion 50, which is the contact surface of the substrate 41 with the substrate W, that is, the upper surface 41A of the substrate 41 is polished. That is, as shown in FIGS. 10A and 10B, it is preferable that the method for manufacturing the holding device 40 includes a step of polishing the upper surface 41A of the substrate 41.

また、本実施例においては、基体４１の加工にブラスト加工を含む。このブラスト加工によって形成された部分は、レーザ光ＬＢの照射によって形成された部分に比べ、パーティクルが発生しやすい。従って、ブラスト加工を含む工程によって基体４１を形成する場合、ブラスト加工部分を研磨することが好ましい。具体的には、例えば、ブラスト加工後（例えばレーザ加工前、図１０Ｅと図１０Ｆとの間のタイミング）において、基体４１Ｐの主面ＰＬ１を研磨する工程を含むことが好ましい。
［凸部５０を形成する他の工程］
本実施例においては、凸部５０をブラスト加工及びレーザ加工によって形成する場合について説明した。しかし、凸部５０は、上記した方法以外によっても形成することができる。例えば、凸部５０は、図１２Ａ及び図１２Ｂに示すように、第１の凸部５０Ｐ及び第２の凸部５２の両方をレーザ光ＬＢの照射によって形成することができる。 Further, in this embodiment, the processing of the substrate 41 includes a blasting process. The portion formed by this blasting process is more likely to generate particles than the portion formed by irradiation with the laser beam LB. Therefore, when the substrate 41 is formed by a process including blasting, it is preferable to polish the blasted portion. Specifically, for example, it is preferable to include a step of polishing the main surface PL1 of the substrate 41P after blasting (for example, before laser machining, timing between FIGS. 10E and 10F).
[Other steps for forming the convex portion 50]
In this embodiment, a case where the convex portion 50 is formed by blasting and laser machining has been described. However, the convex portion 50 can be formed by a method other than the above method. For example, as shown in FIGS. 12A and 12B, the convex portion 50 can be formed by irradiating both the first convex portion 50P and the second convex portion 52 with the laser beam LB.

具体的には、凸部５０を形成する工程は、基体４１Ｐの上面４１Ａにレーザ光ＬＢを照射して側面に複数のレーザ痕ＬＭを有する複数の第１の凸部５０Ｐを形成する工程（図１２Ａ）と、第１の凸部５０Ｐの上面にレーザ光ＬＢを照射して側面に複数のレーザ痕ＬＭを有する複数の第２の凸部５２を形成する工程（図１２Ｂ）と、を含んでいてもよい。 Specifically, the step of forming the convex portion 50 is a step of irradiating the upper surface 41A of the substrate 41P with the laser beam LB to form a plurality of first convex portions 50P having a plurality of laser marks LM on the side surface (FIG. 12A) and a step (FIG. 12B) of irradiating the upper surface of the first convex portion 50P with laser light LB to form a plurality of second convex portions 52 having a plurality of laser marks LM on the side surfaces. You may.

また、凸部５０を形成する工程は、例えば、図１３Ａ及び図１３Ｂに示すように、２段階で主面ＰＬ１を形成することで形成することができる。この場合、例えば、１段階目のレーザ照射で第２の凸部５２が形成され、２段階目のレーザ照射で第１の凸部５１が形成される。 Further, the step of forming the convex portion 50 can be formed by forming the main surface PL1 in two steps, for example, as shown in FIGS. 13A and 13B. In this case, for example, the second convex portion 52 is formed by the first stage laser irradiation, and the first convex portion 51 is formed by the second stage laser irradiation.

具体的には、凸部５０を形成する工程は、基体４１の上面４１Ａにレーザ光ＬＢの照射を照射して上面４１Ａよりも低い位置に第１の主面ＰＬ１１を形成し、第１の主面ＰＬ１１から突出する第２の凸部５２を形成する工程（図１３Ａ）と、第１の主面ＰＬ１１にレーザ光ＬＢを照射して第１の主面ＰＬ１１よりも低い位置に主面ＰＬ１となる第２の主面を形成し、主面ＰＬ１から突出する第１の凸部５１を形成する工程（図１３Ｂ）と、を含んでいてもよい。 Specifically, in the step of forming the convex portion 50, the upper surface 41A of the substrate 41 is irradiated with the laser beam LB to form the first main surface PL11 at a position lower than the upper surface 41A, and the first main surface PL11 is formed. The step of forming the second convex portion 52 protruding from the surface PL11 (FIG. 13A) and the main surface PL1 at a position lower than the first main surface PL11 by irradiating the first main surface PL11 with the laser beam LB. A step of forming a second main surface and forming a first convex portion 51 protruding from the main surface PL1 (FIG. 13B) may be included.

上記した種々の工程を経た場合でも、各々が側面にレーザ痕ＬＭを有する第１及び第２の凸部５１及び５２を有する２段構造の凸部５０を形成することができる。 Even after undergoing the various steps described above, it is possible to form the convex portion 50 having a two-stage structure having the first and second convex portions 51 and 52 each having the laser mark LM on the side surface.

なお、本実施例においては、レーザ痕ＬＭが第２の凸部５２の側面５２Ｓ、第１の凸部５１の上面５１Ｔ及び側面５１Ｓ、並びに基体４１の主面ＰＬ１における第１の凸部５１の周囲の領域に形成される場合について説明した。しかし、レーザ痕ＬＭは、少なくとも第２の凸部５２の側面５２Ｓに設けられていればよい。 In this embodiment, the laser scar LM is the side surface 52S of the second convex portion 52, the upper surface 51T and the side surface 51S of the first convex portion 51, and the first convex portion 51 on the main surface PL1 of the substrate 41. The case where it is formed in the surrounding area has been described. However, the laser mark LM may be provided at least on the side surface 52S of the second convex portion 52.

換言すれば、例えば、レーザ痕ＬＭは、第１の凸部５１の上面５１Ｔ又は側面５１Ｓには設けられていなくてもよい。図１４は、実施例２の変形例に係る保持装置４０Ａの凸部５０Ａの模式的な側面図である。本変形例においては、レーザ痕ＬＭは、第２の凸部５２の側面と、第１の凸部５１の上面５１Ｔの一部とに設けられている。 In other words, for example, the laser mark LM may not be provided on the upper surface 51T or the side surface 51S of the first convex portion 51. FIG. 14 is a schematic side view of the convex portion 50A of the holding device 40A according to the modified example of the second embodiment. In this modification, the laser scar LM is provided on the side surface of the second convex portion 52 and a part of the upper surface 51T of the first convex portion 51.

凸部５０Ａは、例えば、図１３Ｂに示す第２の主面としての主面ＰＬ１を形成して第１の凸部５１を形成する工程を、レーザ加工に代えてブラスト加工によって行うことで、形成することができる。すなわち、保持装置４０Ａの製造方法における凸部５０Ａの形成工程は、例えば、まず、レーザ光ＬＢの照射によって第２の凸部５２を形成し（図１３Ａ）、次にブラスト加工によって第１の凸部５１を形成する工程（図１３Ｂ改）を含む。 The convex portion 50A is formed by, for example, performing the step of forming the main surface PL1 as the second main surface shown in FIG. 13B to form the first convex portion 51 by blasting instead of laser machining. can do. That is, in the step of forming the convex portion 50A in the manufacturing method of the holding device 40A, for example, first, the second convex portion 52 is formed by irradiation with the laser beam LB (FIG. 13A), and then the first convex portion is formed by blasting. The step of forming the portion 51 (revised in FIG. 13B) is included.

本変形例のように、レーザ痕ＬＭは、凸部５０Ａの上側の凸部である第２の凸部５２の側面５２Ｓのみに設けられていてもよい。これによって、基板Ｗとの接触部である第２の凸部５２の近傍でのパーティクルの発生が抑制され、一定のコンタミネーションの抑制効果を得ることができる。 As in this modification, the laser mark LM may be provided only on the side surface 52S of the second convex portion 52, which is the upper convex portion of the convex portion 50A. As a result, the generation of particles in the vicinity of the second convex portion 52, which is the contact portion with the substrate W, is suppressed, and a certain contamination suppressing effect can be obtained.

なお、パーティクルの発生を抑制することを考慮すると、第１の凸部５１は、第１の凸部５１の上面５１Ｔに複数のレーザ痕ＬＭを有することが好ましく、またその側面５１Ｓに線状に延びる複数のレーザ痕ＬＭを有することが好ましい。また、基体４１は、主面ＰＬ１において少なくとも複数の第１の凸部５１の周囲にレーザ痕ＬＭを有することが好ましい。 In consideration of suppressing the generation of particles, the first convex portion 51 preferably has a plurality of laser marks LM on the upper surface 51T of the first convex portion 51, and linearly on the side surface 51S thereof. It is preferable to have a plurality of extending laser scars LM. Further, the substrate 41 preferably has laser marks LM around at least a plurality of first convex portions 51 on the main surface PL1.

上記したように、本実施例においては、保持装置４０は、セラミックス焼結体からなる平板形状の基体４１と、基体４１の主面ＰＬ１から突出する複数の第１の凸部５１と、複数の第１の凸部５１の上面５１Ｔから突出し、頂面５２Ｔが基板Ｗの載置面（基体４１の上面４１Ａ）をなす複数の第２の凸部５２と、を有する。また、第２の凸部５２の各々は、第２の凸部５２の側面５２Ｓに形成されかつ頂面５２Ｔから第１の凸部５１の上面５１Ｔまで線状に延びる複数のレーザ痕ＬＭを有する。従って、パーティクルの発生が大幅に抑制された保持装置４０及びその製造方法を提供することができる。 As described above, in the present embodiment, the holding device 40 includes a flat plate-shaped substrate 41 made of a ceramic sintered body, a plurality of first convex portions 51 projecting from the main surface PL1 of the substrate 41, and a plurality of first convex portions 51. It has a plurality of second convex portions 52 that protrude from the upper surface 51T of the first convex portion 51 and whose top surface 52T forms a mounting surface of the substrate W (upper surface 41A of the substrate 41). Further, each of the second convex portions 52 has a plurality of laser marks LM formed on the side surface 52S of the second convex portion 52 and extending linearly from the top surface 52T to the upper surface 51T of the first convex portion 51. .. Therefore, it is possible to provide a holding device 40 in which the generation of particles is significantly suppressed and a method for manufacturing the same.

１０、１０Ａ、４０、４０Ａ…基板保持装置、 １１、４１…基体、 ２０、２０Ａ、５０、５０Ａ…凸部、 ＬＭ…レーザ痕。 10, 10A, 40, 40A ... Substrate holding device, 11, 41 ... Base, 20, 20A, 50, 50A ... Convex part, LM ... Laser mark.

Claims (11)

セラミックス焼結体からなる平板形状の基体と、
前記基体の主面から突出し、頂面が基板の載置面をなす複数の凸部と、を有する基板保持装置であって、
前記複数の凸部は、前記複数の凸部の側面に形成されかつ前記頂面から前記基体の前記主面に向かって線状に延びる複数のレーザ痕を有することを特徴とする基板保持装置。 A flat plate-shaped substrate made of a ceramic sintered body and
A substrate holding device having a plurality of convex portions protruding from the main surface of the substrate and having a top surface forming a mounting surface of the substrate.
The substrate holding device is characterized in that the plurality of convex portions are formed on the side surfaces of the plurality of convex portions and have a plurality of laser marks linearly extending from the top surface toward the main surface of the substrate. 前記複数のレーザ痕は、前記複数の凸部の前記側面において前記基体の主面まで延在していることを特徴とする請求項１に記載の基板保持装置。 The substrate holding device according to claim 1, wherein the plurality of laser marks extend to the main surface of the substrate on the side surface of the plurality of convex portions. 前記基体は、前記主面において少なくとも前記複数の凸部の周囲に複数のレーザ痕を有することを特徴とする請求項２に記載の基板保持装置。 The substrate holding device according to claim 2, wherein the substrate has a plurality of laser marks on the main surface at least around the plurality of convex portions. セラミックス焼結体からなる平板形状の基体と、
前記基体の主面から突出する複数の第１の凸部と、
前記複数の第１の凸部の上面から突出し、頂面が基板の載置面をなす複数の第２の凸部と、を有する基板保持装置であって、
前記複数の第２の凸部は、前記複数の第２の凸部の側面に形成されかつ前記頂面から前記第１の凸部の前記上面まで線状に延びる複数のレーザ痕を有することを特徴とする基板保持装置。 A flat plate-shaped substrate made of a ceramic sintered body and
A plurality of first convex portions projecting from the main surface of the substrate,
A substrate holding device having a plurality of second convex portions projecting from the upper surface of the plurality of first convex portions and having a top surface forming a mounting surface of the substrate.
The plurality of second convex portions are formed on the side surfaces of the plurality of second convex portions and have a plurality of laser marks linearly extending from the top surface to the upper surface of the first convex portion. A featured substrate holding device. 前記複数の第１の凸部は、前記複数の第１の凸部の前記上面に複数のレーザ痕を有することを特徴とする請求項４に記載の基板保持装置。 The substrate holding device according to claim 4, wherein the plurality of first convex portions have a plurality of laser marks on the upper surface of the plurality of first convex portions. 前記複数の第１の凸部は、前記複数の第１の凸部の側面に線状に延びる複数のレーザ痕を有することを特徴とする請求項４又は５に記載の基板保持装置。 The substrate holding device according to claim 4 or 5, wherein the plurality of first convex portions have a plurality of laser marks extending linearly on the side surfaces of the plurality of first convex portions. 前記基体は、前記主面において少なくとも前記複数の第１の凸部の周囲にレーザ痕を有することを特徴とする請求項６に記載の基板保持装置。 The substrate holding device according to claim 6, wherein the substrate has laser marks around at least the plurality of first convex portions on the main surface. 基板保持装置の製造方法であって、
セラミックス焼結体からなる平板形状の基体の上面にレーザ光を照射して前記基体の前記上面よりも低い位置に主面を形成し、前記主面から突出しかつ各々の側面に複数のレーザ痕を有する複数の凸部を形成する工程を含み、
前記複数の凸部を形成する工程は、前記基体の上面にレーザ光を照射して側面に複数のレーザ痕を有する複数の第１の凸部を形成する工程と、前記第１の凸部の上面にレーザ光を照射して側面に複数のレーザ痕を有する複数の第２の凸部を形成する工程と、を含むことを特徴とする基板保持装置の製造方法。 It is a manufacturing method of a substrate holding device.
The upper surface of a flat plate-shaped substrate made of a ceramic sintered body is irradiated with laser light to form a main surface at a position lower than the upper surface of the substrate, and a plurality of laser marks are formed on each side surface so as to project from the main surface. forming a plurality of protrusions having seen including,
The steps of forming the plurality of convex portions include a step of irradiating the upper surface of the substrate with a laser beam to form a plurality of first convex portions having a plurality of laser marks on the side surfaces, and a step of forming the first convex portions. A method for manufacturing a substrate holding device , which comprises a step of irradiating a top surface with a laser beam to form a plurality of second convex portions having a plurality of laser marks on the side surfaces. 基板保持装置の製造方法であって、
セラミックス焼結体からなる平板形状の基体の上面に、各々が互いに離間して島状に配列された複数のマスク部からなるマスクを形成する工程と、
前記基体の上面に前記マスクを介してブラスト加工を行って前記基体の前記上面よりも低い位置に主面を形成し、前記主面から突出する複数の第１の凸部を形成する工程と、
前記マスクを除去する工程と、
前記複数の第１の凸部の上面にレーザ光を照射して前記複数の第１の凸部の各々を部分的に除去し、側面に複数のレーザ痕を有する第２の凸部を形成する工程と、を含むことを特徴とする基板保持装置の製造方法。 It is a manufacturing method of a substrate holding device.
A step of forming a mask consisting of a plurality of mask portions arranged in an island shape separated from each other on the upper surface of a flat plate-shaped substrate made of a ceramic sintered body.
A step of blasting the upper surface of the substrate via the mask to form a main surface at a position lower than the upper surface of the substrate, and forming a plurality of first convex portions protruding from the main surface.
The step of removing the mask and
A laser beam is applied to the upper surface of the plurality of first convex portions to partially remove each of the plurality of first convex portions to form a second convex portion having a plurality of laser marks on the side surface. A method of manufacturing a substrate holding device, which comprises a process. 前記基体の前記上面を研磨する工程を含むことを特徴とする請求項９に記載の基板保持装置の製造方法。 The method for manufacturing a substrate holding device according to claim 9 , further comprising a step of polishing the upper surface of the substrate. 前記基体の前記主面を研磨する工程を含むことを特徴とする請求項９又は１０に記載の基板保持装置の製造方法。 The method for manufacturing a substrate holding device according to claim 9 or 10 , further comprising a step of polishing the main surface of the substrate.
JP2017125620A 2017-06-27 2017-06-27 Substrate holding device and its manufacturing method Active JP6960260B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2017125620A JP6960260B2 (en) 2017-06-27 2017-06-27 Substrate holding device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017125620A JP6960260B2 (en) 2017-06-27 2017-06-27 Substrate holding device and its manufacturing method

Publications (2)

Publication Number Publication Date
JP2019009358A JP2019009358A (en) 2019-01-17
JP6960260B2 true JP6960260B2 (en) 2021-11-05

Family

ID=65026063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017125620A Active JP6960260B2 (en) 2017-06-27 2017-06-27 Substrate holding device and its manufacturing method

Country Status (1)

Country Link
JP (1) JP6960260B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023188480A1 (en) * 2022-03-30 2023-10-05 日本碍子株式会社 Member for semiconductor manufacturing device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019700A (en) * 2003-06-26 2005-01-20 Sumitomo Osaka Cement Co Ltd Method of manufacturing attracting and fixing apparatus
JP5011736B2 (en) * 2006-01-31 2012-08-29 住友大阪セメント株式会社 Electrostatic chuck device
JP5597524B2 (en) * 2010-11-29 2014-10-01 京セラ株式会社 Mounting member and manufacturing method thereof
EP3439027B1 (en) * 2016-03-30 2022-12-07 KYOCERA Corporation Suction member

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023188480A1 (en) * 2022-03-30 2023-10-05 日本碍子株式会社 Member for semiconductor manufacturing device

Also Published As

Publication number Publication date
JP2019009358A (en) 2019-01-17

Similar Documents

Publication Publication Date Title
JP5094863B2 (en) Substrate adsorption apparatus and manufacturing method thereof
JP2017212374A (en) Substrate holding device and manufacturing method of the same
US20100214712A1 (en) Method for charge-neutralizing target substrate and substrate processing apparatus
JP5597524B2 (en) Mounting member and manufacturing method thereof
CN108780775B (en) Adsorption member
JP2011199303A (en) Suction member and device, and sucking method
JP2009117567A (en) Vacuum chuck
JP6960260B2 (en) Substrate holding device and its manufacturing method
JP2009054723A (en) Sucking member, sucking device, and sucking method
JP6612985B2 (en) Sample holder
JP4695145B2 (en) Sample holder, sample adsorption device using the same, sample processing method, and method for manufacturing sample holder
JP2016027604A (en) Surface processing apparatus
JP2009206455A (en) Vacuum chuck
JP2019009418A (en) Substrate holding member
JP7288308B2 (en) Manufacturing method of holding device
JP6993813B2 (en) Board holding device
JP2014090038A (en) Suction member
JP6971183B2 (en) Board fixing device
JP2002151580A (en) Wafer holding jig and method for manufacturing the same
JP2016031979A (en) Vacuum chuck
JP2720331B2 (en) Workpiece suction plate
JP6525845B2 (en) Laser processing equipment
JP7345304B2 (en) Wafer processing method
JP2006324312A (en) Substrate-holding device
KR20190001525A (en) Substrate holding member

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200309

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210204

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210209

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210408

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211005

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211011

R150 Certificate of patent or registration of utility model

Ref document number: 6960260

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350