JP6951936B2 - 多結晶シリコン棒および単結晶シリコンの製造方法 - Google Patents
多結晶シリコン棒および単結晶シリコンの製造方法 Download PDFInfo
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- JP6951936B2 JP6951936B2 JP2017203017A JP2017203017A JP6951936B2 JP 6951936 B2 JP6951936 B2 JP 6951936B2 JP 2017203017 A JP2017203017 A JP 2017203017A JP 2017203017 A JP2017203017 A JP 2017203017A JP 6951936 B2 JP6951936 B2 JP 6951936B2
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- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
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- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
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- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
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- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
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- C30B29/02—Elements
- C30B29/06—Silicon
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
条件1:粒径が0.5μm以上の結晶粒が検出されない領域の総和面積が、電子線照射された面積全体の10%以下であること。
条件2:粒径が0.5μm以上で3μm未満の範囲にある結晶粒の個数が、検出された結晶粒の全体の45%以上であること。
25 ハロゲンランプ
30 試料容器
40 熱電対温度計
50 窓
100 高温観察炉
200 光学顕微鏡
Claims (3)
- 0.3MPaG以上の圧力下で化学気相法により多結晶シリコン棒を育成する工程と、
前記多結晶シリコン棒の任意の部位から採取した板状試料片を、シリコンの融点未満の温度からシリコンの融点を超える温度まで昇温させながら顕微鏡観察したときに、融点直下において、複数の結晶粒子が不均質に集合した結晶領域であって、針状結晶ではない結晶領域の直径が10μmを超える不均質結晶領域が観察されない多結晶シリコン棒を選択する工程と、
を備えた多結晶シリコン棒の取り扱い方法。 - 0.1MPaG以下の圧力下で化学気相法により育成された多結晶シリコン棒を育成する工程と、
前記多結晶シリコン棒の任意の部位から採取した板状試料片を、シリコンの融点未満の温度からシリコンの融点を超える温度まで昇温させながら顕微鏡観察したときに、融点直下において、複数の結晶粒子が不均質に集合した結晶領域であって、針状結晶ではない結晶領域の直径が100μmを超える不均質結晶領域が観察されない多結晶シリコン棒を選択する工程と、
を備えた多結晶シリコン棒の取り扱い方法。 - 請求項1または2で選択された多結晶シリコン棒を原料として用いる、単結晶シリコンの製造方法。
Priority Applications (4)
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JP2017203017A JP6951936B2 (ja) | 2017-10-20 | 2017-10-20 | 多結晶シリコン棒および単結晶シリコンの製造方法 |
CN201810915033.7A CN109694076B (zh) | 2017-10-20 | 2018-08-13 | 多晶硅棒和单晶硅的制造方法 |
DE102018008145.2A DE102018008145A1 (de) | 2017-10-20 | 2018-10-15 | Polykrystalliner Siliciumstab und Verfahren zum Erzeugen eines Silicium-Einkristalls |
US16/161,526 US10914021B2 (en) | 2017-10-20 | 2018-10-16 | Polycrystalline silicon rod and method for producing single crystal silicon |
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JP2017203017A JP6951936B2 (ja) | 2017-10-20 | 2017-10-20 | 多結晶シリコン棒および単結晶シリコンの製造方法 |
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JP2019077568A JP2019077568A (ja) | 2019-05-23 |
JP6951936B2 true JP6951936B2 (ja) | 2021-10-20 |
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US (1) | US10914021B2 (ja) |
JP (1) | JP6951936B2 (ja) |
CN (1) | CN109694076B (ja) |
DE (1) | DE102018008145A1 (ja) |
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CN110133023B (zh) * | 2019-05-17 | 2022-04-26 | 西安奕斯伟材料科技有限公司 | 多晶硅选择方法、多晶硅及其在直拉法中的应用 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH1149508A (ja) * | 1997-06-03 | 1999-02-23 | Tokuyama Corp | 多結晶シリコンの廃棄物の少ない製造方法 |
DE102007023041A1 (de) | 2007-05-16 | 2008-11-20 | Wacker Chemie Ag | Polykristalliner Siliciumstab für das Zonenziehen und ein Verfahren zu dessen Herstellung |
CN102557038B (zh) * | 2011-12-31 | 2015-05-13 | 江苏中能硅业科技发展有限公司 | 一种多晶硅制备方法 |
CN111647943A (zh) * | 2012-06-29 | 2020-09-11 | 三菱综合材料株式会社 | 多晶硅棒 |
JP5712176B2 (ja) * | 2012-08-06 | 2015-05-07 | 信越化学工業株式会社 | 多結晶シリコン棒の選択方法、多結晶シリコン塊の製造方法、及び、単結晶シリコンの製造方法 |
JP6038625B2 (ja) * | 2012-12-10 | 2016-12-07 | 株式会社トクヤマ | 多結晶シリコンロッドの製造方法と製造装置 |
JP5923463B2 (ja) | 2013-06-26 | 2016-05-24 | 信越化学工業株式会社 | 多結晶シリコンの結晶粒径分布の評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法 |
JP2016041636A (ja) * | 2014-08-18 | 2016-03-31 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法および多結晶シリコン棒 |
JP6314097B2 (ja) | 2015-02-19 | 2018-04-18 | 信越化学工業株式会社 | 多結晶シリコン棒 |
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- 2018-08-13 CN CN201810915033.7A patent/CN109694076B/zh active Active
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CN109694076B (zh) | 2024-03-19 |
CN109694076A (zh) | 2019-04-30 |
DE102018008145A1 (de) | 2019-04-25 |
JP2019077568A (ja) | 2019-05-23 |
US20190119829A1 (en) | 2019-04-25 |
US10914021B2 (en) | 2021-02-09 |
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