JP6923850B2 - 光電センサ - Google Patents
光電センサ Download PDFInfo
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- JP6923850B2 JP6923850B2 JP2018047934A JP2018047934A JP6923850B2 JP 6923850 B2 JP6923850 B2 JP 6923850B2 JP 2018047934 A JP2018047934 A JP 2018047934A JP 2018047934 A JP2018047934 A JP 2018047934A JP 6923850 B2 JP6923850 B2 JP 6923850B2
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- 239000000758 substrate Substances 0.000 claims description 40
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 7
- 238000009434 installation Methods 0.000 description 7
- 238000005452 bending Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
- G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/04—Systems determining the presence of a target
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
- G01S7/4813—Housing arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
- G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
- G01V8/14—Detecting, e.g. by using light barriers using one transmitter and one receiver using reflectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
- G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
- G01V8/18—Detecting, e.g. by using light barriers using one transmitter and one receiver using mechanical scanning systems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
- G01V8/20—Detecting, e.g. by using light barriers using multiple transmitters or receivers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Radar, Positioning & Navigation (AREA)
- Computer Networks & Wireless Communication (AREA)
- Remote Sensing (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Switches Operated By Changes In Physical Conditions (AREA)
- Switch Cases, Indication, And Locking (AREA)
- Geophysics And Detection Of Objects (AREA)
Description
前方空間に光を出射する投光部31と、前方区間から光を受ける受光部32の少なくとも一方を有する光電センサ1であって、
投光部31及び受光部32を収容する略直方体形状の筐体2を備え、
筐体2は、
投光部31からの光及び受光部32への光を通過させる投受光面21aを有する前面21と、
前面21と反対側に位置する背面22とを有し、
投光部31及び受光部32の少なくとも一方は制御部を介してコード50に接続され、
背面22には、コード50を収容するケーブル80が取り付けられている、光電センサ1。
Claims (5)
- 前方空間に光を出射する投光部と、前方区間から光を受ける受光部の少なくとも一方を有する光電センサであって、
前記投光部及び前記受光部の少なくとも一方を収容する略直方体形状の筐体を備え、
前記筐体は、
前記投光部からの光及び前記受光部への光の少なくとも一方を通過させる投受光面を有する前面と、
前記前面と反対側に位置する背面とを有し、
前記投光部及び前記受光部の少なくとも一方は制御部を介してコードに接続され、
前記背面には、前記コードを収容したケーブルが取り付けられており、
前記背面には、前記筐体を外部に固定するための取付部が複数設けられ、
前記ケーブルは、前記背面における上方側に位置する前記取付部と前記背面における下方側に位置する前記取付部との間に取り付けられている、光電センサ。 - 前記ケーブルは、その端部が前記筐体の内部に位置するように前記背面に取り付けられ、
前記端部の周囲を覆う保護部材が設けられている、請求項1に記載の光電センサ。 - 前記筐体は、前記投受光部が搭載された基板と、前記コードのうち前記ケーブルに覆われていない部分とを更に収容する、請求項1又は2に記載の光電センサ。
- 前記コードは、略平板状に構成された前記基板の端部に接続され、
前記投受光部は、前記基板における前記基板の端部と反対側の端部寄りに配置されている、請求項3に記載の光電センサ。 - 前方空間に光を出射する投光部と、前方区間から光を受ける受光部の少なくとも一方を有する光電センサであって、
前記投光部及び前記受光部の少なくとも一方を収容する略直方体形状の筐体を備え、
前記筐体は、
前記投光部からの光及び前記受光部への光の少なくとも一方を通過させる投受光面を有する前面と、
前記前面と反対側に位置する背面とを有し、
前記投光部及び前記受光部の少なくとも一方は制御部を介してコードに接続され、
前記背面には、前記コードを収容したケーブルが取り付けられており、
前記筐体は、前記投受光部が搭載された基板と、前記コードのうち前記ケーブルに覆われていない部分とを更に収容し、
前記コードは、前記基板の端部から前記筐体内部の一面側に延びて前記背面側へ向かうように湾曲する部分と、該部分から前記ケーブルの端部側へ延びる部分とを有する、光電センサ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018047934A JP6923850B2 (ja) | 2018-03-15 | 2018-03-15 | 光電センサ |
EP19156760.1A EP3540473B1 (en) | 2018-03-15 | 2019-02-12 | Photoelectric sensor |
CN201910112328.5A CN110275215A (zh) | 2018-03-15 | 2019-02-13 | 光电传感器 |
US16/276,588 US10707370B2 (en) | 2018-03-15 | 2019-02-14 | Photoelectric sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018047934A JP6923850B2 (ja) | 2018-03-15 | 2018-03-15 | 光電センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019160680A JP2019160680A (ja) | 2019-09-19 |
JP6923850B2 true JP6923850B2 (ja) | 2021-08-25 |
Family
ID=65493809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018047934A Active JP6923850B2 (ja) | 2018-03-15 | 2018-03-15 | 光電センサ |
Country Status (4)
Country | Link |
---|---|
US (1) | US10707370B2 (ja) |
EP (1) | EP3540473B1 (ja) |
JP (1) | JP6923850B2 (ja) |
CN (1) | CN110275215A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP1652542S (ja) * | 2019-04-01 | 2020-02-10 | ||
JP1652543S (ja) * | 2019-04-01 | 2020-02-10 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6020033B2 (ja) | 1977-12-02 | 1985-05-20 | 三菱電機株式会社 | ミシンの下糸払い装置 |
JP4321506B2 (ja) | 2005-09-08 | 2009-08-26 | オムロン株式会社 | 光電センサの製造方法 |
JP5162902B2 (ja) * | 2007-01-09 | 2013-03-13 | オムロン株式会社 | 光電センサの受光ユニットおよび光電センサの投光ユニット |
JP2008298485A (ja) * | 2007-05-29 | 2008-12-11 | Yamatake Corp | 光電センサ |
KR101165943B1 (ko) * | 2009-02-10 | 2012-07-18 | 애니와이어 가부시키가이샤 | 광전 센서 및 광전 센서 시스템 |
US8441091B2 (en) * | 2010-12-09 | 2013-05-14 | General Electric Company | Photosensor assembly and method for providing a photosensor assembly |
JP6020033B2 (ja) * | 2012-10-23 | 2016-11-02 | オムロン株式会社 | 光電センサ |
JP2017157760A (ja) * | 2016-03-03 | 2017-09-07 | オムロン株式会社 | 光学電子機器 |
-
2018
- 2018-03-15 JP JP2018047934A patent/JP6923850B2/ja active Active
-
2019
- 2019-02-12 EP EP19156760.1A patent/EP3540473B1/en active Active
- 2019-02-13 CN CN201910112328.5A patent/CN110275215A/zh active Pending
- 2019-02-14 US US16/276,588 patent/US10707370B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3540473A1 (en) | 2019-09-18 |
CN110275215A (zh) | 2019-09-24 |
US10707370B2 (en) | 2020-07-07 |
JP2019160680A (ja) | 2019-09-19 |
EP3540473B1 (en) | 2022-08-24 |
US20190288154A1 (en) | 2019-09-19 |
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