JP6923554B2 - 配線基板、電子装置および電子モジュール - Google Patents
配線基板、電子装置および電子モジュール Download PDFInfo
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- JP6923554B2 JP6923554B2 JP2018553017A JP2018553017A JP6923554B2 JP 6923554 B2 JP6923554 B2 JP 6923554B2 JP 2018553017 A JP2018553017 A JP 2018553017A JP 2018553017 A JP2018553017 A JP 2018553017A JP 6923554 B2 JP6923554 B2 JP 6923554B2
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- 239000000758 substrate Substances 0.000 claims description 126
- 229910000679 solder Inorganic materials 0.000 claims description 29
- 239000004020 conductor Substances 0.000 description 87
- 239000000919 ceramic Substances 0.000 description 55
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000007747 plating Methods 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
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- 238000007650 screen-printing Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000006188 syrup Substances 0.000 description 1
- 235000020357 syrup Nutrition 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2924/15172—Fan-out arrangement of the internal vias
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- H05K2201/09—Shape and layout
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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Description
第1の実施形態における電子装置は、図1〜図6に示された例のように、配線基板1と、配線基板1の上面に設けられた電子部品2とを含んでいる。電子装置は、図6に示された例のように、例えば電子モジュールを構成するモジュール用基板5上の接続パッド51にはんだ6を用いて接続される。
次に、第2の実施形態による電子装置について、図7〜図11を参照しつつ説明する。
次に、第3の実施形態による電子装置について、図12〜図16を参照しつつ説明する。なお、図12(b)に示す例において、内面電極13が、平面透視において、接続部15と重なる領域を破線にて示している。
次に、第4の実施形態による電子装置について、図17および図18を参照しつつ説明する。第4の実施形態における電子装置において、上述の実施形態の電子装置と異なる点は、切欠き部12が、絶縁基板11の両主面および側面に開口している点である。また、絶縁基板11は、他方主面(図17および図18では上面)に、凹部17を有している。なお、図17(b)に示す例において、内面電極13の側面が、平面透視において、接続部15と重なる領域を破線にて示している。
次に、第5の実施形態による電子装置について、図19および図20を参照しつつ説明する。第5の実施形態における電子装置において、上記した第1の実施形態の電子装置と異なる点は、絶縁基板11の内部に、絶縁基板11の厚み方向に沿って形成された外部電極14と配線導体16とを接続するビア18を有する点である。なお、図19(b)に示す例において、内面電極13の側面が、平面透視において、接続部15と重なる領域を破線にて示している。また、図19(b)に示す例において、ビア18の側面が、平面透視において、外部電極14と重なる領域を破線にて示している。
Claims (8)
- 主面および側面に開口する切欠き部を有している絶縁基板と、
前記切欠き部の内面に位置し、前記主面に延出した内面電極と、
前記絶縁基板の主面から前記内面電極の側面にかけて位置した外部電極とを含んでおり、前記内面電極と前記外部電極とが接続された接続部を有しており、
該接続部の厚みは、前記内面電極の厚みおよび前記外部電極の厚みより大きく、
前記接続部において、前記外部電極は、前記内面電極の側面を覆っており、前記絶縁基板の厚み方向における、前記外部電極の長さは、延出した前記内面電極の長さより大きいことを特徴とする配線基板。 - 前記接続部は、前記切欠き部における前記主面側の開口に沿って位置していることを特徴とする請求項1に記載の配線基板。
- 前記接続部は、前記切欠き部の内面に沿った方向における、前記内面電極の幅と同等の長さを有していることを特徴とする請求項2に記載の配線基板。
- 前記接続部は、前記主面に沿った方向において、厚みが大きくなっていることを特徴とする請求項1乃至請求項3のいずれかに記載の配線基板。
- 前記接続部は、前記絶縁基板の厚み方向において、厚みが大きくなっていることを特徴とする請求項1乃至請求項4のいずれかに記載の配線基板。
- 前記接続部は、凸曲面状であることを特徴とする請求項1乃至請求項5のいずれかに記載の配線基板。
- 請求項1乃至請求項6のいずれかに記載の配線基板と、
該配線基板に搭載された電子部品とを有することを特徴とする電子装置。 - 接続パッドを有するモジュール用基板と、
前記接続パッドにはんだを介して接続された請求項7に記載の電子装置とを有することを特徴とする電子モジュール。
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