JP6921179B2 - 超格子を用いたiii−p発光デバイス - Google Patents
超格子を用いたiii−p発光デバイス Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims description 35
- 229910052782 aluminium Inorganic materials 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims 2
- 238000007788 roughening Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 160
- 239000000463 material Substances 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 8
- 239000010931 gold Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910002059 quaternary alloy Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910001258 titanium gold Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- Power Engineering (AREA)
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Description
本出願は、2016年7月28日に出願された米国仮特許出願第62/367935号、2017年7月26日に出願された米国特許出願第15/660602号、および2017年9月29日に出願された欧州特許出願第16191414.8号について優先権を主張するものである。米国仮特許出願第62/367935号、米国特許出願第15/660602号、および欧州特許出願第16191414.8号は、ここにおいて包含されている。
Claims (15)
- デバイスであって、
n型領域とp型領域との間に配置されたIII−P発光層を有する半導体構造体であり、該n型領域は超格子を含んでいる、半導体構造体と、
前記III−P発光層とは反対側の前記超格子の表面上で、かつ、該表面と接触している金属n接点と、を含み、
前記超格子は、複数の層のペアを含み、各層のペアは、AlxGa1−xInPの第1層、ここで0<x<1、および、AlYGa1−YInPの第2層、ここで0<y<1、を含んでおり、前記第1層は、前記第2層よりも小さいアルミニウム組成を有している、
デバイス。 - 前記デバイスは、さらに、
前記p型領域に配置された接点、を含む、
請求項1に記載のデバイス。 - 0.3≦x≦0.4、かつ、0.4≦y≦0.5、
である、請求項1に記載のデバイス。 - 0.2≦x≦0.5、かつ、0.3≦y≦0.65、
である、請求項1に記載のデバイス。 - 前記第1層および前記第2層は、n型ドーパントを用いてドープされる、
請求項1に記載のデバイス。 - 前記第1層および前記第2層のうち少なくとも1つは、前記半導体構造体がその上で成長する成長基板に関して歪んでいる、
請求項1に記載のデバイス。 - 前記超格子は、前記半導体構造体がその上で成長する成長基板に対して格子整合している、
請求項1に記載のデバイス。 - 方法であって、
成長基板上でn型超格子を成長させるステップであり、
該超格子は、複数の層のペアを含み、
各層のペアは、Al x Ga 1−x InPの第1層、および、Al Y Ga 1−Y InPの第2層を含み、ここで、0<x<1、かつ、0<y<1であり、
前記第1層は、前記第2層よりも小さいアルミニウム組成を有している、
ステップと、
p型領域上に第1金属接点を形成するステップと、
前記n型超格子上で直接的に発光領域を成長させるステップと、
前記発光領域上でp型領域を成長させるステップと、
前記超格子の表面を露出させるために前記成長基板を除去するステップと、
前記超格子の前記露出された表面上に直接的に第2金属接点を形成するステップと、
を含む、方法。 - 0.2≦x≦0.5、かつ、0.3≦y≦0.65、
である、請求項8に記載の方法。 - 前記方法は、さらに、
前記超格子を前記成長基板に対して格子整合させるステップ、
を含む、請求項8に記載の方法。 - 前記方法は、さらに、
前記成長基板に関して歪んでいる、前記第1層および前記第2層のうち少なくとも1つを成長させるステップ、
を含む、請求項8に記載の方法。 - 前記方法は、さらに、
前記超格子の前記露出された表面を粗面化またはパターニングするステップ、
を含む、請求項8に記載の方法。 - 前記超格子の前記露出された表面上に直接的に第2金属接点を形成するステップは、
前記超格子の前記表面上に直接的に金属層を形成するステップと、
形状作られた金属接点を形成するために前記金属層をパターニングするステップであり、前記形状は、平面図において1ミクロン以上、かつ、30ミクロン未満の幅を有している、ステップと、
を含む、請求項8に記載の方法。 - 前記超格子の層は、前記超格子を横切り変化しているドーピングプロファイルを用いてドープされている、
請求項1に記載のデバイス。 - 前記第1層は、前記第2層よりも高ドープされている、
請求項1に記載のデバイス。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662367935P | 2016-07-28 | 2016-07-28 | |
US62/367,935 | 2016-07-28 | ||
EP16191414 | 2016-09-29 | ||
EP16191414.8 | 2016-09-29 | ||
US15/660,602 US20180033912A1 (en) | 2016-07-28 | 2017-07-26 | Iii-p light emitting device with a superlattice |
US15/660,602 | 2017-07-26 | ||
PCT/US2017/044113 WO2018022849A1 (en) | 2016-07-28 | 2017-07-27 | Iii-p light emitting device with a superlattice |
Publications (2)
Publication Number | Publication Date |
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JP2019523556A JP2019523556A (ja) | 2019-08-22 |
JP6921179B2 true JP6921179B2 (ja) | 2021-08-18 |
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JP2019504017A Active JP6921179B2 (ja) | 2016-07-28 | 2017-07-27 | 超格子を用いたiii−p発光デバイス |
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EP (1) | EP3491676B1 (ja) |
JP (1) | JP6921179B2 (ja) |
KR (1) | KR102189614B1 (ja) |
CN (1) | CN109952659B (ja) |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2264794B1 (en) * | 1997-01-09 | 2014-11-19 | Nichia Corporation | Nitride semiconductor device |
GB2344458B (en) * | 1998-12-02 | 2000-12-27 | Arima Optoelectronics Corp | Light-emitting diodes |
US8174025B2 (en) * | 2006-06-09 | 2012-05-08 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting device including porous layer |
DE102009060747A1 (de) * | 2009-12-30 | 2011-07-07 | OSRAM Opto Semiconductors GmbH, 93055 | Halbleiterchip |
JP5648475B2 (ja) * | 2010-12-28 | 2015-01-07 | 信越半導体株式会社 | 発光素子 |
JP5955226B2 (ja) * | 2010-12-29 | 2016-07-20 | シャープ株式会社 | 窒化物半導体構造、窒化物半導体発光素子、窒化物半導体トランジスタ素子、窒化物半導体構造の製造方法および窒化物半導体素子の製造方法 |
US8865565B2 (en) * | 2011-08-02 | 2014-10-21 | Kabushiki Kaisha Toshiba | LED having a low defect N-type layer that has grown on a silicon substrate |
JP2014103242A (ja) * | 2012-11-20 | 2014-06-05 | Stanley Electric Co Ltd | 半導体発光素子 |
KR102376468B1 (ko) * | 2014-12-23 | 2022-03-21 | 엘지이노텍 주식회사 | 적색 발광소자 및 조명장치 |
CN105206721B (zh) * | 2015-10-29 | 2018-01-19 | 天津三安光电有限公司 | 发光二极管 |
CN105609609B (zh) * | 2016-01-22 | 2018-02-16 | 华灿光电(苏州)有限公司 | 一种倒装结构的发光二极管芯片及其制备方法 |
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2017
- 2017-07-27 JP JP2019504017A patent/JP6921179B2/ja active Active
- 2017-07-27 CN CN201780060367.4A patent/CN109952659B/zh active Active
- 2017-07-27 KR KR1020197006106A patent/KR102189614B1/ko active IP Right Grant
- 2017-07-27 EP EP17745957.5A patent/EP3491676B1/en active Active
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KR102189614B1 (ko) | 2020-12-11 |
CN109952659A (zh) | 2019-06-28 |
JP2019523556A (ja) | 2019-08-22 |
CN109952659B (zh) | 2022-03-11 |
EP3491676B1 (en) | 2020-09-30 |
EP3491676A1 (en) | 2019-06-05 |
KR20190039540A (ko) | 2019-04-12 |
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