JP6914731B2 - 移動体および無線通信モジュール - Google Patents
移動体および無線通信モジュール Download PDFInfo
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- JP6914731B2 JP6914731B2 JP2017105042A JP2017105042A JP6914731B2 JP 6914731 B2 JP6914731 B2 JP 6914731B2 JP 2017105042 A JP2017105042 A JP 2017105042A JP 2017105042 A JP2017105042 A JP 2017105042A JP 6914731 B2 JP6914731 B2 JP 6914731B2
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- Japan
- Prior art keywords
- wireless communication
- communication module
- groove
- ground
- power amplifier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B15/00—Suppression or limitation of noise or interference
- H04B15/02—Reducing interference from electric apparatus by means located at or near the interfering apparatus
- H04B15/04—Reducing interference from electric apparatus by means located at or near the interfering apparatus the interference being caused by substantially sinusoidal oscillations, e.g. in a receiver or in a tape-recorder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/50—Circuits using different frequencies for the two directions of communication
- H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
- H04B1/525—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/002—Casings with localised screening
- H05K9/0022—Casings with localised screening of components mounted on printed circuit boards [PCB]
- H05K9/0037—Housings with compartments containing a PCB, e.g. partitioning walls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/002—Casings with localised screening
- H05K9/0039—Galvanic coupling of ground layer on printed circuit board [PCB] to conductive casing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Transceivers (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Description
2 基板
21、23、25 グランド層
22、24 絶縁層
26 溝
3 電源IC
4 メモリ
5 ベースバンドIC
6 RFIC
7 電力増幅器
8 フィルタ
9、90 シールド
Claims (6)
- 移動体であって、
1層以上のグランド層を含む基板と、
前記基板上に配置され、入力されるRF信号を増幅する第1素子と、
前記基板上に配置され、前記第1素子とは異なる第2素子と、を備え、
前記1層以上のグランド層は、前記第1素子および前記第2素子の間に溝を有しており、
前記溝は、前記第1素子を取り囲んでおり、
前記1層以上のグランド層それぞれにおいて、前記溝によって取り囲まれた内側部分と外側部分とが電気的に分離されている、無線通信モジュールを備える、
移動体。 - 1層以上のグランド層を含む基板と、
前記基板上に配置され、入力されるRF信号を増幅する第1素子と、
前記基板上に配置され、前記第1素子とは異なる第2素子と、を備え、
前記1層以上のグランド層は、前記第1素子および前記第2素子の間に溝を有しており、
前記溝は、前記第1素子を取り囲んでおり、
前記1層以上のグランド層それぞれにおいて、前記溝によって取り囲まれた内側部分と外側部分とが電気的に分離されている、無線通信モジュール。 - 請求項2に記載の無線通信モジュールであって、
前記1層以上のグランド層は、前記第1素子が配置される表層である第1グランド層と、内層である第2グランド層と、を含む、無線通信モジュール。 - 請求項2又は3に記載の無線通信モジュールであって、
前記第1素子は、前記1層以上のグランド層の前記内側部分に接続され、
前記第2素子は、前記1層以上のグランド層の前記外側部分に接続される、無線通信モジュール。 - 請求項2から4の何れか一項に記載の無線通信モジュールであって、
前記1層以上のグランド層の前記外側部分に接続されたシールドを更に備える、無線通信モジュール。 - 請求項5に記載の無線通信モジュールであって、
前記第1素子は、前記シールドによって覆われている、無線通信モジュール。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017105042A JP6914731B2 (ja) | 2017-05-26 | 2017-05-26 | 移動体および無線通信モジュール |
PCT/JP2018/018816 WO2018216557A1 (ja) | 2017-05-26 | 2018-05-15 | 移動体および無線通信モジュール |
CN201880033999.6A CN110663192B (zh) | 2017-05-26 | 2018-05-15 | 移动体以及无线通信模块 |
US16/615,783 US11024591B2 (en) | 2017-05-26 | 2018-05-15 | Mobile object and wireless communication module |
EP18806360.6A EP3633862B1 (en) | 2017-05-26 | 2018-05-15 | Mobile body and wireless communication module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017105042A JP6914731B2 (ja) | 2017-05-26 | 2017-05-26 | 移動体および無線通信モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018201131A JP2018201131A (ja) | 2018-12-20 |
JP6914731B2 true JP6914731B2 (ja) | 2021-08-04 |
Family
ID=64396761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017105042A Active JP6914731B2 (ja) | 2017-05-26 | 2017-05-26 | 移動体および無線通信モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US11024591B2 (ja) |
EP (1) | EP3633862B1 (ja) |
JP (1) | JP6914731B2 (ja) |
CN (1) | CN110663192B (ja) |
WO (1) | WO2018216557A1 (ja) |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003100989A (ja) * | 2001-09-27 | 2003-04-04 | Hitachi Ltd | 高周波モジュール |
WO2004112241A1 (en) * | 2003-06-10 | 2004-12-23 | Kabushiki Kaisha Toshiba | High-frequency power amplifier module |
JP2005094405A (ja) * | 2003-09-18 | 2005-04-07 | Tdk Corp | 弾性表面波フィルタを備えた高周波モジュール |
JP4105122B2 (ja) * | 2004-05-31 | 2008-06-25 | 東光株式会社 | 高周波モジュール |
JP2010165728A (ja) * | 2009-01-13 | 2010-07-29 | Kyocera Corp | 多層基板及び携帯通信機器 |
JP2010225620A (ja) * | 2009-03-19 | 2010-10-07 | Panasonic Corp | 回路モジュール |
JP4542194B2 (ja) * | 2009-09-24 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 高周波回路モジュール |
JP2011187677A (ja) * | 2010-03-09 | 2011-09-22 | Panasonic Corp | モジュール |
JP2012019091A (ja) * | 2010-07-08 | 2012-01-26 | Sony Corp | モジュールおよび携帯端末 |
JP2013222829A (ja) * | 2012-04-17 | 2013-10-28 | Taiyo Yuden Co Ltd | 回路モジュール及びその製造方法 |
US9160825B2 (en) * | 2013-10-30 | 2015-10-13 | Taiyo Yuden Co., Ltd. | Communication module |
JP6300008B2 (ja) | 2014-01-28 | 2018-03-28 | 日本精機株式会社 | 車両用表示装置 |
WO2016063759A1 (ja) * | 2014-10-20 | 2016-04-28 | 株式会社村田製作所 | 無線通信モジュール |
US20200203287A1 (en) * | 2018-12-20 | 2020-06-25 | Qualcomm Incorporated | Device comprising compartmental shielding with improved heat dissipation and routing |
-
2017
- 2017-05-26 JP JP2017105042A patent/JP6914731B2/ja active Active
-
2018
- 2018-05-15 WO PCT/JP2018/018816 patent/WO2018216557A1/ja active Application Filing
- 2018-05-15 CN CN201880033999.6A patent/CN110663192B/zh active Active
- 2018-05-15 EP EP18806360.6A patent/EP3633862B1/en active Active
- 2018-05-15 US US16/615,783 patent/US11024591B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US11024591B2 (en) | 2021-06-01 |
EP3633862A4 (en) | 2020-12-16 |
US20200219829A1 (en) | 2020-07-09 |
EP3633862A1 (en) | 2020-04-08 |
CN110663192A (zh) | 2020-01-07 |
EP3633862B1 (en) | 2022-05-11 |
JP2018201131A (ja) | 2018-12-20 |
WO2018216557A1 (ja) | 2018-11-29 |
CN110663192B (zh) | 2021-05-25 |
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