JP6913841B1 - 測距イメージセンサ - Google Patents
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- JP6913841B1 JP6913841B1 JP2021521322A JP2021521322A JP6913841B1 JP 6913841 B1 JP6913841 B1 JP 6913841B1 JP 2021521322 A JP2021521322 A JP 2021521322A JP 2021521322 A JP2021521322 A JP 2021521322A JP 6913841 B1 JP6913841 B1 JP 6913841B1
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- 238000005259 measurement Methods 0.000 title description 3
- 238000012546 transfer Methods 0.000 claims abstract description 149
- 238000009826 distribution Methods 0.000 claims abstract description 80
- 239000004065 semiconductor Substances 0.000 claims description 160
- 230000004888 barrier function Effects 0.000 claims description 46
- 239000012535 impurity Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 description 17
- 230000035945 sensitivity Effects 0.000 description 11
- 230000000903 blocking effect Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000002366 time-of-flight method Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Abstract
Description
[第1実施形態]
[光検出装置の構成]
[測距イメージセンサの構成]
[測距イメージセンサの製造方法]
[作用及び効果]
[第2実施形態]
[第3実施形態]
[変形例]
Claims (12)
- 第1側の第1表面、及び、前記第1側とは反対側である第2側の第2表面を有し、前記第1表面に沿って配置された複数の画素を構成する半導体層と、
前記第1表面に設けられ、前記複数の画素を構成する電極層と、を備え、
前記複数の画素のそれぞれは、
前記半導体層に形成された第1導電型の第1増倍領域、及び、前記半導体層において前記第1増倍領域の前記第1側に形成された第2導電型の第2増倍領域を含むアバランシェ増倍領域と、
前記半導体層において前記第2増倍領域の前記第1側に形成され、前記第2増倍領域と接続された第2導電型の電荷振分領域と、
前記半導体層において前記第2増倍領域の前記第1側に形成され、前記電荷振分領域と接続された第2導電型の第1電荷転送領域と、
前記半導体層において前記第2増倍領域の前記第1側に形成され、前記電荷振分領域と接続された第2導電型の第2電荷転送領域と、
前記半導体層において前記第2増倍領域の前記第1側に形成された第1導電型のウェル領域と、
前記電極層において前記電荷振分領域の前記第1側に形成されたフォトゲート電極と、
前記フォトゲート電極に対して前記第1電荷転送領域側に位置するように、前記電極層において前記電荷振分領域の前記第1側に形成された第1転送ゲート電極と、
前記フォトゲート電極に対して前記第2電荷転送領域側に位置するように、前記電極層において前記電荷振分領域の前記第1側に形成された第2転送ゲート電極と、を有し、
前記第1増倍領域は、前記半導体層の厚さ方向において前記電荷振分領域と重なり且つ前記ウェル領域と重ならないように形成されており、
前記第2増倍領域は、前記半導体層の厚さ方向において前記電荷振分領域及び前記ウェル領域と重なるように形成されている、測距イメージセンサ。 - 前記複数の画素のそれぞれは、
前記半導体層において前記第2増倍領域と前記ウェル領域との間に形成された第2導電型のバリア領域を更に有する、請求項1に記載の測距イメージセンサ。 - 前記バリア領域は、前記半導体層の厚さ方向から見た場合に前記ウェル領域を含んでいる、請求項2に記載の測距イメージセンサ。
- 前記複数の画素のそれぞれは、
前記半導体層において前記バリア領域の前記第1側に形成され、前記バリア領域と接続された第2導電型のシンク領域を更に有する、請求項2又は3に記載の測距イメージセンサ。 - 前記シンク領域は、前記第2電荷転送領域と接続されている、請求項4に記載の測距イメージセンサ。
- 前記第2増倍領域は、前記半導体層の厚さ方向において前記電荷振分領域と重なる第1領域、並びに、前記半導体層の厚さ方向において前記ウェル領域と重なる第2領域を含み、
前記第2領域の不純物の濃度は、前記第1領域の不純物の濃度よりも高い、請求項1に記載の測距イメージセンサ。 - 前記第2領域は、前記半導体層の厚さ方向から見た場合に前記ウェル領域を含んでいる、請求項6に記載の測距イメージセンサ。
- 前記複数の画素のそれぞれは、
前記半導体層において前記第2領域の前記第1側に形成され、前記第2領域と接続された第2導電型のシンク領域を更に有する、請求項6又は7に記載の測距イメージセンサ。 - 前記シンク領域は、前記第2電荷転送領域と接続されている、請求項8に記載の測距イメージセンサ。
- 前記半導体層の前記第1表面には、前記複数の画素のそれぞれを互いに分離するトレンチが形成されている、請求項1〜9のいずれか一項に記載の測距イメージセンサ。
- 前記第1増倍領域は、前記複数の画素のそれぞれごとに分離されている、請求項1〜10のいずれか一項に記載の測距イメージセンサ。
- 前記電極層を覆うように前記第1表面に設けられ、前記複数の画素のそれぞれと電気的に接続された配線層を更に備える、請求項1〜11のいずれか一項に記載の測距イメージセンサ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2019236241 | 2019-12-26 | ||
JP2019236241 | 2019-12-26 | ||
PCT/JP2020/045499 WO2021131641A1 (ja) | 2019-12-26 | 2020-12-07 | 測距イメージセンサ |
Publications (2)
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JP6913841B1 true JP6913841B1 (ja) | 2021-08-04 |
JPWO2021131641A1 JPWO2021131641A1 (ja) | 2021-12-23 |
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Country Status (6)
Country | Link |
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US (1) | US20230048727A1 (ja) |
JP (1) | JP6913841B1 (ja) |
KR (1) | KR20220119662A (ja) |
CN (1) | CN114846606A (ja) |
DE (1) | DE112020006385T5 (ja) |
WO (1) | WO2021131641A1 (ja) |
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JP5558999B2 (ja) | 2009-11-24 | 2014-07-23 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
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2020
- 2020-12-07 CN CN202080089255.3A patent/CN114846606A/zh active Pending
- 2020-12-07 US US17/788,000 patent/US20230048727A1/en active Pending
- 2020-12-07 KR KR1020227024970A patent/KR20220119662A/ko unknown
- 2020-12-07 DE DE112020006385.2T patent/DE112020006385T5/de active Pending
- 2020-12-07 WO PCT/JP2020/045499 patent/WO2021131641A1/ja active Application Filing
- 2020-12-07 JP JP2021521322A patent/JP6913841B1/ja active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2008004547A1 (fr) * | 2006-07-03 | 2008-01-10 | Hamamatsu Photonics K.K. | Ensemble photodiode |
JP2009014460A (ja) * | 2007-07-03 | 2009-01-22 | Hamamatsu Photonics Kk | 裏面入射型測距センサ及び測距装置 |
JP2009047661A (ja) * | 2007-08-22 | 2009-03-05 | Hamamatsu Photonics Kk | 測距装置 |
JP2011222893A (ja) * | 2010-04-14 | 2011-11-04 | Hamamatsu Photonics Kk | 半導体光検出素子 |
JP2018530176A (ja) * | 2015-07-08 | 2018-10-11 | ザ コモンウェルス オブ オーストラリアThe Commonwealth Of Australia | Spadアレイ構造及び動作方法 |
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US20190187260A1 (en) * | 2016-08-12 | 2019-06-20 | Sony Depthsensing Solutions Sa/Nv | A demodulator with a carrier generating pinned photodiode and a method for operating it |
WO2018174090A1 (ja) * | 2017-03-22 | 2018-09-27 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び信号処理装置 |
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US20230048727A1 (en) | 2023-02-16 |
DE112020006385T5 (de) | 2022-10-13 |
JPWO2021131641A1 (ja) | 2021-12-23 |
WO2021131641A1 (ja) | 2021-07-01 |
CN114846606A (zh) | 2022-08-02 |
KR20220119662A (ko) | 2022-08-30 |
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