JP6901906B2 - 切削装置 - Google Patents
切削装置 Download PDFInfo
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- JP6901906B2 JP6901906B2 JP2017095698A JP2017095698A JP6901906B2 JP 6901906 B2 JP6901906 B2 JP 6901906B2 JP 2017095698 A JP2017095698 A JP 2017095698A JP 2017095698 A JP2017095698 A JP 2017095698A JP 6901906 B2 JP6901906 B2 JP 6901906B2
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- cutting
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- 238000005520 cutting process Methods 0.000 title claims description 205
- 238000005070 sampling Methods 0.000 claims description 47
- 238000001514 detection method Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 11
- 230000005856 abnormality Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 244000309466 calf Species 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a cutting blade mounted on a carriage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
(1)
T≦W/(S×1000)[sec]
このように、サンプリング時間Tは、チッピングサイズ(クラックサイズ)Wを切削ブレード43が通過する所要時間よりも短く設定されている。
15 保持テーブル
18 切削送り手段
30 割り出し送り手段
40 切削手段
43 切削ブレード
71 弾性波検出センサ
75 制御手段
76 解析手段
81 カーフ(切削溝)
86 チッピング
W 被加工物
Claims (1)
- 被加工物を保持する保持テーブルと、該保持テーブル上に保持された被加工物を切削するための切削ブレードを備えた切削手段と、該保持テーブルと該切削手段とを相対的に切削送り方向に移動させる切削送り手段と、該保持テーブルと該切削手段とを相対的に切削送り方向と直交する割り出し送り方向に移動させる割り出し送り手段と、該保持テーブル、該切削手段、該切削送り手段、及び該割り出し送り手段を制御する制御手段とを備えた切削装置であって、
該切削手段又は該保持テーブルに配設され該切削ブレードが被加工物を切削する際に発生する弾性波を検出する弾性波検出センサと、
該弾性波検出センサで検出された被加工物を切削加工する際の弾性波の連続的な時間軸波形からサンプリング時間T間隔で切り出して周波数解析する解析手段と、を備え、
該サンプリング時間Tは、検出したい切削後の切削溝に生じうるチッピング、クラックサイズ(切削送り方向)W[μm]、該切削送り手段の送り速度をS[mm/sec]とすると、T≦W/(S×1000)[sec]となるように設定することを特徴とする切削装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017095698A JP6901906B2 (ja) | 2017-05-12 | 2017-05-12 | 切削装置 |
TW107112479A TWI760478B (zh) | 2017-05-12 | 2018-04-12 | 切削裝置 |
KR1020180052348A KR102333523B1 (ko) | 2017-05-12 | 2018-05-08 | 절삭 장치 |
CN201810435506.3A CN108858834B (zh) | 2017-05-12 | 2018-05-09 | 切削装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017095698A JP6901906B2 (ja) | 2017-05-12 | 2017-05-12 | 切削装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018195618A JP2018195618A (ja) | 2018-12-06 |
JP6901906B2 true JP6901906B2 (ja) | 2021-07-14 |
Family
ID=64332930
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017095698A Active JP6901906B2 (ja) | 2017-05-12 | 2017-05-12 | 切削装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6901906B2 (ja) |
KR (1) | KR102333523B1 (ja) |
CN (1) | CN108858834B (ja) |
TW (1) | TWI760478B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020113641A (ja) * | 2019-01-09 | 2020-07-27 | 株式会社ディスコ | 切削装置 |
JP7404009B2 (ja) * | 2019-09-19 | 2023-12-25 | キオクシア株式会社 | 加工情報管理システム及び加工情報管理方法 |
CN112557245B (zh) * | 2020-11-25 | 2023-04-14 | 安徽荷金来农业发展股份有限公司 | 一种牛肉加工水分检测装置及使用方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61182573A (ja) * | 1985-02-08 | 1986-08-15 | Omron Tateisi Electronics Co | 工具折損予知装置 |
JPS61182573U (ja) * | 1985-05-08 | 1986-11-14 | ||
JPH0499946A (ja) * | 1990-08-20 | 1992-03-31 | Sanko Control Kk | 砥石の切れ味測定方法及び装置 |
JPH04273005A (ja) * | 1991-02-28 | 1992-09-29 | Kobe Steel Ltd | テレビカメラを用いた寸法測定装置 |
JPH05154833A (ja) * | 1991-12-09 | 1993-06-22 | Nikko Kyodo Co Ltd | ダイシングマシン |
JP4704816B2 (ja) | 2005-06-29 | 2011-06-22 | 株式会社ディスコ | 切削装置 |
JP2008006532A (ja) * | 2006-06-29 | 2008-01-17 | Mitsubishi Heavy Ind Ltd | 深穴加工装置 |
JP4860444B2 (ja) * | 2006-11-28 | 2012-01-25 | 蔵前産業株式会社 | 切削加工における異常検出方法 |
JP5219600B2 (ja) * | 2008-04-18 | 2013-06-26 | 株式会社東京精密 | 砥石成形状態判定装置及び砥石成形状態判定方法 |
US8944885B2 (en) * | 2009-09-28 | 2015-02-03 | Mitsubishi Heavy Industries, Ltd. | Device for phasing threaded grinding wheel |
JP2013157385A (ja) * | 2012-01-27 | 2013-08-15 | Semiconductor Components Industries Llc | 半導体装置及びその自動外観検査方法 |
JP5892831B2 (ja) * | 2012-03-28 | 2016-03-23 | 株式会社ディスコ | 切削装置 |
JP6223237B2 (ja) * | 2014-03-07 | 2017-11-01 | 株式会社ディスコ | 切削装置 |
JP6695102B2 (ja) * | 2015-05-26 | 2020-05-20 | 株式会社ディスコ | 加工システム |
CN105866250B (zh) * | 2016-03-17 | 2018-12-18 | 北京工业大学 | 基于振动的通风机叶片裂纹识别方法 |
CN206014669U (zh) * | 2016-09-05 | 2017-03-15 | 合肥鑫晟光电科技有限公司 | 一种切割设备 |
-
2017
- 2017-05-12 JP JP2017095698A patent/JP6901906B2/ja active Active
-
2018
- 2018-04-12 TW TW107112479A patent/TWI760478B/zh active
- 2018-05-08 KR KR1020180052348A patent/KR102333523B1/ko active IP Right Grant
- 2018-05-09 CN CN201810435506.3A patent/CN108858834B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2018195618A (ja) | 2018-12-06 |
CN108858834A (zh) | 2018-11-23 |
KR102333523B1 (ko) | 2021-12-01 |
TWI760478B (zh) | 2022-04-11 |
KR20180124742A (ko) | 2018-11-21 |
TW201901771A (zh) | 2019-01-01 |
CN108858834B (zh) | 2021-03-26 |
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