JP6870779B2 - 共振装置及び共振装置製造方法 - Google Patents
共振装置及び共振装置製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000010936 titanium Substances 0.000 claims description 208
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 108
- 229910052719 titanium Inorganic materials 0.000 claims description 108
- 239000000758 substrate Substances 0.000 claims description 98
- 230000005496 eutectics Effects 0.000 claims description 78
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 75
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- 229910052782 aluminium Inorganic materials 0.000 claims description 55
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 55
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 38
- 229910052732 germanium Inorganic materials 0.000 claims description 27
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 26
- -1 aluminum-silicon-copper Chemical compound 0.000 claims description 21
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 229910000927 Ge alloy Inorganic materials 0.000 claims description 6
- 239000006023 eutectic alloy Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 238000005304 joining Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 353
- 239000010408 film Substances 0.000 description 81
- 229910045601 alloy Inorganic materials 0.000 description 27
- 239000000956 alloy Substances 0.000 description 27
- 238000009792 diffusion process Methods 0.000 description 27
- 238000010438 heat treatment Methods 0.000 description 24
- 239000010409 thin film Substances 0.000 description 17
- 229910016570 AlCu Inorganic materials 0.000 description 14
- 238000007872 degassing Methods 0.000 description 14
- 230000004048 modification Effects 0.000 description 13
- 238000012986 modification Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000002265 prevention Effects 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000001816 cooling Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2468—Tuning fork resonators
- H03H9/2478—Single-Ended Tuning Fork resonators
- H03H9/2489—Single-Ended Tuning Fork resonators with more than two fork tines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0595—Holders; Supports the holder support and resonator being formed in one body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1057—Mounting in enclosures for microelectro-mechanical devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2447—Beam resonators
- H03H9/2457—Clamped-free beam resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0172—Seals
- B81C2203/019—Seals characterised by the material or arrangement of seals between parts
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Computer Hardware Design (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
まず、図1及び図2を参照しつつ、本発明の一実施形態に係る共振装置1の概略構成について説明する。図1は、本発明の一実施形態に係る共振装置1の外観を概略的に示す斜視図である。また、図2は、本発明の一実施形態に係る共振装置1の構造を概略的に示す分解斜視図である。
図7は、図5に示した接合部60の第1変形例を示す要部拡大図である。なお、第2変形例において、図5に示した接合部60と同一の構成については、同一の符号を付し、その説明を適宜省略する。また、同様の構成による同様の作用効果については、逐次言及しない。
図8は、図5に示した接合部60の第2変形例を示す要部拡大図である。なお、第2変形例において、図5に示した接合部60と同一の構成については、同一の符号を付し、その説明を適宜省略する。また、同様の構成による同様の作用効果については、逐次言及しない。
Claims (16)
- 共振子を含む第1基板と、
第2基板と、
前記共振子の振動空間を封止するように、前記第1基板と前記第2基板とを接合する接合部と、を備え、
前記接合部は、前記第1基板側から前記第2基板側にかけて連続して設けられる、ゲルマニウムとアルミニウムを主成分とする金属との共晶合金で構成された共晶層、第1チタン層、第1アルミニウム酸化膜、及び、第1導電層を含む、
共振装置。 - 前記第1アルミニウム酸化膜は、3nm以上10nm以下の厚さを有する、
請求項1に記載の共振装置。 - 前記第1導電層の材料は、アルミニウム、アルミニウム−銅合金、又はアルミニウム−シリコン−銅合金である、
請求項1又は2に記載の共振装置。 - 前記アルミニウムを主成分とする金属は、アルミニウム、アルミニウム−銅合金、又はアルミニウム−シリコン−銅合金である、
請求項1から3のいずれか一項に記載の共振装置。 - 前記接合部は、前記第1基板側から前記共晶層にかけて連続して設けられる、第2導電層、及び、第2チタン層をさらに含む、
請求項1から4のいずれか一項に記載の共振装置。 - 前記接合部は、前記第1基板側から前記共晶層にかけて連続して設けられる、第2導電層、第2アルミニウム酸化膜、及び、第2チタン層をさらに含む、
請求項1から4のいずれか一項に記載の共振装置。 - 前記第2アルミニウム酸化膜は、3nm以上10nm以下の厚さを有する、
請求項6に記載の共振装置。 - 前記第2導電層の材料は、アルミニウム、アルミニウム−銅合金、又はアルミニウム−シリコン−銅合金である、
請求項5から7のいずれか一項に記載の共振装置。 - 共振子を含む第1基板及び第2基板を用意する工程と、
前記第1基板における前記共振子の振動部の周囲に、アルミニウムを主成分とする金属層を含む第1層を形成する工程と、
前記第1基板と前記第2基板とを対向させたときの前記第2基板における前記第1層に対向する位置に、前記第2基板側から、第1導電層、第1アルミニウム酸化膜、第1チタン層、及び、ゲルマニウム層の順に連続して設けられる第2層を形成する工程と、
前記共振子の振動空間を封止するように、前記第1層の金属層と前記第2層のゲルマニウム層とを共晶接合させる工程と、を含む、
共振装置製造方法。 - 前記第1アルミニウム酸化膜は、3nm以上10nm以下の厚さを有する、
請求項9に記載の共振装置製造方法。 - 前記第1導電層の材料は、アルミニウム、アルミニウム−銅合金、又はアルミニウム−シリコン−銅合金である、
請求項9又は10に記載の共振装置製造方法。 - 前記金属層の材料は、アルミニウム、アルミニウム−銅合金、又はアルミニウム−シリコン−銅合金である、
請求項9から11のいずれか一項に記載の共振装置製造方法。 - 前記第1層を形成する工程は、前記第1基板側から前記金属層にかけて、第2導電層、及び、第2チタン層を連続して設けることを含む、
請求項9から12のいずれか一項に記載の共振装置製造方法。 - 前記第1層を形成する工程は、前記第1基板側から前記金属層にかけて、第2導電層、第2アルミニウム酸化膜、及び、第2チタン層を連続して設けることを含む、
請求項9から12のいずれか一項に記載の共振装置製造方法。 - 前記第2アルミニウム酸化膜は、3nm以上10nm以下の厚さを有する、
請求項14に記載の共振装置製造方法。 - 前記第2導電層の材料は、アルミニウム、アルミニウム−銅合金、又はアルミニウム−シリコン−銅合金である、
請求項13から15のいずれか一項に記載の共振装置製造方法。
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WO2023120142A1 (ja) * | 2021-12-23 | 2023-06-29 | 株式会社村田製作所 | Memsデバイス及びmemsデバイスの製造方法 |
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