JP6864274B2 - 共振装置 - Google Patents
共振装置 Download PDFInfo
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- JP6864274B2 JP6864274B2 JP2019555257A JP2019555257A JP6864274B2 JP 6864274 B2 JP6864274 B2 JP 6864274B2 JP 2019555257 A JP2019555257 A JP 2019555257A JP 2019555257 A JP2019555257 A JP 2019555257A JP 6864274 B2 JP6864274 B2 JP 6864274B2
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- resonator
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- 229910052732 germanium Inorganic materials 0.000 claims description 3
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- 230000003287 optical effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 229910052706 scandium Inorganic materials 0.000 description 1
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- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
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- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
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Description
以下、添付の図面を参照して本発明の第1実施形態について説明する。図1は、本発明の第1実施形態に係る共振装置1の外観を概略的に示す斜視図である。また、図2は、本発明の第1実施形態に係る共振装置1の構造を概略的に示す分解斜視図である。
共振子10と上蓋30とは、後述する接合部H1を介して接合されている。また、共振子10と下蓋20は、それぞれSi基板を用いて形成されており、Si基板同士が互いに接合されている。この上蓋30と下蓋20と、後述する共振子10の保持部140と、接合部H1とにより、共振子10が封止され、気密な振動空間が形成される。なお、MEMS基板50(共振子10及び下蓋20)は、SOI基板を用いて形成されてもよい。
(1−1.上蓋30)
上蓋30はXY平面に沿って平板状に広がっており、その裏面に例えば平たい直方体形状の凹部31が形成されている。凹部31は、側壁33に囲まれており、共振子10が振動する空間である振動空間の一部を形成する。また、上蓋30には2つの貫通電極V3が形成されている。なお、上蓋30は凹部31を有さず、平板状の構成でもよい。
また、上蓋30の凹部31の共振子10側の面にはゲッター層34が形成されている。
(A.下蓋20)
下蓋20は、XY平面に沿って設けられる矩形平板状の底板22と、底板22の周縁部からZ軸方向(すなわち、下蓋20と共振子10との積層方向)に延びる側壁23とを有する。下蓋20には、共振子10と対向する面において、底板22の表面と側壁23の内面とによって形成される凹部21が設けられる。凹部21は、共振子10の振動空間の一部を形成する。上述した上蓋30と下蓋20と保持部140と接合部H1によって、この振動空間は気密に封止され、真空状態が維持される。この振動空間には、例えば不活性ガス等の気体が充填されてもよい。なお、下蓋20は凹部21を有さず、平板状の構成でもよい。また、下蓋20の凹部21の共振子10側の面にはゲッター層が形成されてもよい。
図3は、本実施形態に係る、共振子10の構造を概略的に示す平面図である。共振子10は、MEMS技術を用いて製造されるMEMS振動子であり、図3の直交座標系におけるXY平面内で面外振動する。なお、共振子10は図3に示される面外屈曲振動モードを用いた共振子に限定されず、広がり振動モード、厚み縦振動モード、ラム波振動モード、面内屈曲振動モード、表面波振動モードに用いられても良い。これらはタイミングデバイス、RFフィルタ、デュプレクサ、超音波トランスデューサー、ジャイロセンサ、加速度センサに応用される。さらに、アクチュエーター機能を持った圧電ミラーや圧電ジャイロ、圧力センサ機能を持った圧電マイクロフォンや超音波振動センサ等に用いられても良い。さらに静電MEMS素子、電磁駆動MEMS素子、ピエゾ抵抗MEMS素子に適用してもよい。
CMOSデバイス40は、SOIウエハを用いて形成された発振回路用CMOSウエハであり、図2のXY平面に沿って平板状に広がっており、端子T4を有している。またCMOSデバイス40は、上蓋30の共振子10を向く側とは反対側の面に実装されている。
図4を用いて共振装置1の積層構造について説明する。図4は、図1のAA’断面図である。図4に示すように、本実施形態に係る共振装置1では、下蓋20の側壁23上に共振子10の保持部140が接合され、さらに共振子10の保持部140と上蓋30の側壁33とが接合される。このように下蓋20と上蓋30との間に共振子10が保持され、下蓋20と上蓋30と共振子10の保持部140とによって、振動腕135が振動する振動空間が形成される。
上蓋30は、所定の厚みのSi(シリコン)ウエハL3により形成されている。図4に示すように、上蓋30はその周辺部(側壁33)で後述する接合部H1により共振子10の保持部140と接合されている。上蓋30における、共振子10に対向する表面、裏面及び貫通電極V3の側面は、酸化ケイ素膜L31に覆われていることが好ましい。酸化ケイ素膜L31は、例えばSiウエハL3の表面の酸化や、化学気相蒸着(CVD: Chemical Vapor Deposition)によって、SiウエハL3の表面に形成される。
下蓋20の底板22及び側壁23は、Si(シリコン)ウエハL1により、一体的に形成されている。また、下蓋20は、側壁23の上面によって、共振子10の保持部140と接合されている。Z軸方向に規定される下蓋20の厚みは例えば、150μm、凹部21の深さは例えば50μmである。なお、SiウエハL1は、縮退されていないシリコンから形成されており、その抵抗率は例えば16mΩ・cm以上である。
共振子10では、保持部140、基部130、振動腕135、保持腕110は、同一プロセスで一体的に形成される。共振子10では、まず、Si(シリコン)基板F2(基板の一例である。)の上に、金属層E1が積層されている。そして、金属層E1の上には、金属層E1を覆うように、圧電薄膜F3が積層されており、さらに、圧電薄膜F3の上には、金属層E2)が積層されている。金属層E2の上には、金属層E2を覆うように、保護膜235が積層されている。
CMOSデバイス40は、CMOS層L42と、保護層L43と、配線層L41と、端子T4とから形成されている。
接合部H1は、共振子10と上蓋30との間において、XY平面に沿って矩形の環状に形成される。接合部H1は、共振子10と上蓋30とを共晶結合し、共振子10の振動空間を封止する。本実施形態では、接合部H1は、Al層H11とGe層H12とAl層H13とがこの順で積層されて形成されている。このように接合部H1に接続配線W1と同じ種類の金属を用いることにより、プロセスを簡素化することができる。なお、図4においては、Al層H11とGe層H12とAl層H13とは、それぞれ独立した層として記載しているが、実際にはこれらの界面は、共晶結合している。なお、接合部H1は、Au(金)膜及びSn(錫)膜等によって形成されてもよい。
次に、図5A乃至図5Hを用いて本実施形態に係る共振装置1の製造プロセスについて説明する。図5A乃至図5Hは、共振装置1のプロセスフローのうち、上蓋30とCMOSデバイス40とが接合される際のプロセスを抜粋して説明する図である。説明の便宜上、共振装置1のうち、上蓋30とCMOSデバイス40以外の構成は省略している。なお、図5A乃至図5Hでは、便宜上、ウエハに形成される複数の共振装置1のうち、1つの共振装置1を示して説明するが、共振装置1は、通常のMEMSプロセスと同様に、1つのウエハに複数形成された後に、当該ウエハが分割されることによって得られる。
第2の実施形態以降では第1の実施形態と共通の事柄についての記述を省略し、異なる点についてのみ説明する。特に、同様の構成による同様の作用効果については実施形態毎には逐次言及しない。
以下に、本実施形態に係る共振装置3の各構成のうち、第1実施形態との差異点について説明する。図7は、本実施形態に係る、共振装置3の断面の構造の一例を概略的に示す図である。
以下に、本実施形態に係る共振装置4の各構成のうち、第1実施形態との差異点について説明する。図8は、本実施形態に係る、共振装置4の断面の構造の一例を概略的に示す図である。
以下に、本実施形態に係る共振装置5の各構成のうち、第1実施形態との差異点について説明する。図9は、本実施形態に係る共振装置5の断面の構造の一例を概略的に示す図である。本実施形態に係る共振装置5は、第1実施形態に係る共振装置1の上蓋30、下蓋20、共振子10に代えて、上蓋35、下蓋25、共振子13を有している。また、CMOSデバイス40は、下蓋25の下面と接合されている。
以下に、本実施形態に係る共振装置6の各構成のうち、第1実施形態との差異点について説明する。図11は、本実施形態に係る、共振装置6の断面の構造の一例を概略的に示す図である。
以下に、本実施形態に係る共振装置7の製造プロセスのうち、第1実施形態との差異点について説明する。なお、本実施形態に係る共振装置7の各構成は、上述した第6実施形態の共振装置6と略同一であるため、図示及び説明を省略する。
既述の実施形態では、本発明に係る共振装置はMEMS振動子として用いられる例について説明したが、適用例はこれに限定されない。例えば光スキャナ型MEMSミラーや圧電マイクロフォン、圧電トランスデューサー、静電MEMS素子、電磁駆動MEMS素子、ピエゾ抵抗MEMS素子、ジャイロセンサ、加速度センサ等に適用してもよい。また、MHz振動子に適用して、MHz発振器に用いることも可能である。
本発明の一実施形態に係る共振装置1は、下部電極E1と上部電極E2と、下部電極E1と上部電極E2との間に形成された圧電膜F3と、を有する共振子10と、共振子10の上部電極E2に対向して設けられた上蓋30と、共振子10の下部電極E1に対向して設けられ、上蓋30とともに共振子10を封止するように設けられた下蓋20と、を有するMEMSデバイス100と、上蓋30及び下蓋20のうちいずれか一方の蓋における共振子10を向く側とは反対側の面に実装されたCMOSデバイス40と、を備え、CMOSデバイス40は、CMOS層L42と、当該CMOS層L42における共振子10を向く側とは反対側の面に設けられた保護層L43とを有し、上蓋30及び下蓋20のうちCMOSデバイス40と接合される蓋は、当該CMOSデバイスと前記共振子とを電気的に接続する貫通電極を有する。このように、本実施形態に係る共振装置1はCMOSデバイス40がハンドル層を備えていない。これによって、CMOSデバイス40の薄膜化を図ることができるため、共振装置1の厚みを低減することができる。さらに、本実施形態に係る共振装置1は、MEMSデバイスの外部にCMOSデバイス40が接続される構成となっている。これによって、CMOSデバイス40におけるCMOS回路を構成する材料にアウトガスを発生させる物質を使った場合でも、MEMSデバイスの振動空間において高真空を安定して得ることができる。
10、11、12、13 共振子
20、25 下蓋
21 凹部
22 底板
23 側壁
30、35 上蓋
31 凹部
33 側壁
34 ゲッター層
40 CMOSデバイス
50 基板
100 MEMSデバイス
110 保持腕
120 振動部
120A 振動部
127 接合部
130 基部
135 振動腕
140 保持部
141 電圧印加部
142 温度センサ
143 ヒータ
235 保護膜
400、401、402 CMOSウエハ
Claims (7)
- 下部電極と上部電極と、前記下部電極と前記上部電極との間に形成された圧電膜と、を有する共振子と、
前記共振子の前記上部電極に対向して設けられた上蓋と、
前記共振子の前記下部電極に対向して設けられ、前記上蓋とともに前記共振子を封止するように設けられた下蓋と、
を有するMEMSデバイスと、
前記上蓋及び前記下蓋のうちいずれか一方の蓋における前記共振子を向く側とは反対側の面に実装されたCMOSデバイスと、
を備え、
前記CMOSデバイスは、CMOS層と、当該CMOS層における前記共振子を向く側の面に設けられた配線層と、前記CMOS層における前記共振子を向く側とは反対側の面に設けられた保護層とを有し、
前記上蓋及び前記下蓋のうち前記CMOSデバイスが実装される蓋は、当該CMOSデバイスと前記共振子とを電気的に接続する貫通電極を有する、
共振装置。 - 前記CMOSデバイスは、
前記CMOS層における前記保護層が設けられた側に外部端子を有する、
請求項1に記載の共振装置。 - 前記MEMSデバイスと前記CMOSデバイスとを共晶接合する接合部をさらに有し、
前記接合部は、前記配線層により囲まれている、
請求項1又は2に記載の共振装置。 - 前記MEMSデバイスと、前記CMOSデバイスとは、アルミニウムとゲルマニウムとの共晶によって接合された、
請求項3に記載の共振装置。 - 前記MEMSデバイスと、前記CMOSデバイスとは、同一の絶縁膜同士の活性化接合と、同一金属同士の接合とによって電気的に接続された、
請求項1又は2に記載の共振装置。 - 前記上蓋もしくは下蓋は前記共振子を向く側の面にゲッター膜を有する、
請求項1乃至5の何れか一項に記載の共振装置。 - 下部電極、上部電極、及び、前記下部電極と前記上部電極との間に形成された圧電膜を有する共振子と、前記共振子の前記上部電極に対向して設けられた上蓋と、前記共振子の前記下部電極に対向して設けられ、前記上蓋とともに前記共振子を封止するように設けられた下蓋と、を有し、前記上蓋及び前記下蓋のうちいずれか一方の蓋が貫通電極を有する、MEMSデバイスを用意する工程と、
CMOS層と、前記CMOS層における前記共振子を向く側の面に設けられた配線層と、を有するCMOSデバイスを用意する工程と、
前記CMOSデバイスにおける前記配線層を、前記MEMSデバイスにおける前記上蓋及び前記下蓋のうち前記貫通電極を有する蓋における前記共振子を向く側とは反対側の面に対向させて、前記MEMSデバイスに前記CMOSデバイスを実装する工程と、
前記CMOSデバイスにおける前記CMOS層における前記共振子を向く側とは反対側の面に保護層を形成する工程と、
を備える共振装置製造方法。
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WO2018152265A1 (en) * | 2017-02-14 | 2018-08-23 | Sitime Corporation | Mems cavity with non-contaminating seal |
JP6923010B2 (ja) | 2018-02-09 | 2021-08-18 | 株式会社村田製作所 | Memsデバイス |
US11730058B2 (en) * | 2018-09-20 | 2023-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated heater (and related method) to recover degraded piezoelectric device performance |
CN112047297B (zh) * | 2020-09-03 | 2024-05-03 | 南昌大学 | 一种可定位温控的微区加热阵列及其选择性转移半导体微纳集成元件的使用方法 |
US11967938B2 (en) * | 2021-04-06 | 2024-04-23 | Rf360 Singapore Pte. Ltd. | Corrosion resistant pad for enhanced thin film acoustic packaging (TFAP) |
CN115215284A (zh) * | 2021-04-16 | 2022-10-21 | 上海新微技术研发中心有限公司 | 一种具有微型加热器的薄膜吸气剂结构及其制造方法 |
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JP3634676B2 (ja) * | 1999-07-13 | 2005-03-30 | 日本電波工業株式会社 | 圧電発振器 |
US7442570B2 (en) | 2005-03-18 | 2008-10-28 | Invensence Inc. | Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom |
US7666698B2 (en) * | 2006-03-21 | 2010-02-23 | Freescale Semiconductor, Inc. | Method for forming and sealing a cavity for an integrated MEMS device |
JP2010232790A (ja) * | 2009-03-26 | 2010-10-14 | Seiko Epson Corp | 共振回路及びその製造方法並びに電子装置 |
JP2013129055A (ja) * | 2011-11-24 | 2013-07-04 | Ricoh Co Ltd | 気密封止型マイクロデバイスの製造方法 |
US9511994B2 (en) * | 2012-11-28 | 2016-12-06 | Invensense, Inc. | Aluminum nitride (AlN) devices with infrared absorption structural layer |
US9114977B2 (en) * | 2012-11-28 | 2015-08-25 | Invensense, Inc. | MEMS device and process for RF and low resistance applications |
DE102013222733A1 (de) * | 2013-11-08 | 2015-05-13 | Robert Bosch Gmbh | Mikromechanische Sensorvorrichtung |
US9567206B2 (en) * | 2013-11-19 | 2017-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structures and formation methods of micro-electro mechanical system device |
DE102014200512B4 (de) * | 2014-01-14 | 2017-06-08 | Robert Bosch Gmbh | Mikromechanische Drucksensorvorrichtung und entsprechendes Herstellungsverfahren |
CN105845589B (zh) * | 2015-01-14 | 2018-09-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
WO2016158056A1 (ja) * | 2015-03-31 | 2016-10-06 | 株式会社村田製作所 | 共振装置 |
WO2016189952A1 (ja) * | 2015-05-22 | 2016-12-01 | 株式会社村田製作所 | 電子部品 |
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EP3667908A4 (en) | 2021-01-20 |
CN111264031A (zh) | 2020-06-09 |
US10998857B2 (en) | 2021-05-04 |
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