JP6852197B2 - 反応性イオンエッチング装置 - Google Patents
反応性イオンエッチング装置 Download PDFInfo
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- JP6852197B2 JP6852197B2 JP2019567888A JP2019567888A JP6852197B2 JP 6852197 B2 JP6852197 B2 JP 6852197B2 JP 2019567888 A JP2019567888 A JP 2019567888A JP 2019567888 A JP2019567888 A JP 2019567888A JP 6852197 B2 JP6852197 B2 JP 6852197B2
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- capacitor
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- electrodes
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- 238000001020 plasma etching Methods 0.000 title claims description 11
- 239000003990 capacitor Substances 0.000 claims description 68
- 238000005530 etching Methods 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 47
- 238000005513 bias potential Methods 0.000 claims description 17
- 238000002474 experimental method Methods 0.000 description 26
- 239000007789 gas Substances 0.000 description 23
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims (2)
- 真空チャンバ内で被処理基板が設置されるステージと、真空雰囲気中の真空チャンバ内にエッチングガスを導入するガス導入手段と、この導入されたエッチングガスを電離するプラズマを真空チャンバ内に発生させるプラズマ発生手段と、ステージに第1出力ラインを介して接続されて被処理基板に対しバイアス電位を印加する高周波電源とを備え、
ステージに一対の電極を有する静電チャックが設けられ、被処理基板のエッチング時、これら一対の電極に対して直流電圧を印加することで被処理基板が静電チャックに静電吸着されるようにした反応性イオンエッチング装置において、
高周波電源は、第2出力ラインを介して一対の電極に接続されて直流電圧に重畳させて高周波電位を印加するように構成され、第1及び第2の両出力ラインに第1コンデンサと第2コンデンサとが夫々介設され、第2コンデンサに対する第1コンデンサの静電容量比が2.5〜25の範囲内に設定されることを特徴とする反応性イオンエッチング装置。 - 前記第1コンデンサと前記第2コンデンサとの少なくとも一方は、その静電容量が可変の可変コンデンサであることを特徴とする請求項1記載の反応性イオンエッチング装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018012601 | 2018-01-29 | ||
JP2018012601 | 2018-01-29 | ||
PCT/JP2018/044862 WO2019146267A1 (ja) | 2018-01-29 | 2018-12-06 | 反応性イオンエッチング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019146267A1 JPWO2019146267A1 (ja) | 2020-04-09 |
JP6852197B2 true JP6852197B2 (ja) | 2021-03-31 |
Family
ID=67395336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019567888A Active JP6852197B2 (ja) | 2018-01-29 | 2018-12-06 | 反応性イオンエッチング装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10991591B2 (ja) |
EP (1) | EP3748668B1 (ja) |
JP (1) | JP6852197B2 (ja) |
KR (1) | KR102330944B1 (ja) |
CN (1) | CN111052320B (ja) |
TW (1) | TWI770331B (ja) |
WO (1) | WO2019146267A1 (ja) |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08222555A (ja) * | 1994-12-13 | 1996-08-30 | Fuji Electric Co Ltd | 絶縁膜製造装置および製造方法 |
TW335517B (en) * | 1996-03-01 | 1998-07-01 | Hitachi Ltd | Apparatus and method for processing plasma |
JP4463363B2 (ja) * | 1998-12-28 | 2010-05-19 | 東京エレクトロン株式会社 | 下部電極構造およびそれを用いたプラズマ処理装置 |
KR100742487B1 (ko) * | 1998-12-28 | 2007-07-24 | 동경 엘렉트론 주식회사 | 하부 전극 구조 및 그것을 이용한 플라즈마 처리 장치 |
US6875927B2 (en) * | 2002-03-08 | 2005-04-05 | Applied Materials, Inc. | High temperature DC chucking and RF biasing cable with high voltage isolation for biasable electrostatic chuck applications |
JP4753276B2 (ja) * | 2002-11-26 | 2011-08-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP3905870B2 (ja) * | 2003-08-01 | 2007-04-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7359177B2 (en) * | 2005-05-10 | 2008-04-15 | Applied Materials, Inc. | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output |
JP4361045B2 (ja) * | 2005-10-12 | 2009-11-11 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5033361B2 (ja) * | 2006-06-28 | 2012-09-26 | 株式会社アルバック | ドライエッチング方法 |
JP5295833B2 (ja) * | 2008-09-24 | 2013-09-18 | 株式会社東芝 | 基板処理装置および基板処理方法 |
JP5221403B2 (ja) * | 2009-01-26 | 2013-06-26 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置および記憶媒体 |
JP2011228436A (ja) * | 2010-04-19 | 2011-11-10 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
US9472410B2 (en) * | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
JP6357436B2 (ja) * | 2014-07-25 | 2018-07-11 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP6496579B2 (ja) * | 2015-03-17 | 2019-04-03 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP6518505B2 (ja) * | 2015-05-12 | 2019-05-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
JP6574737B2 (ja) * | 2016-05-31 | 2019-09-11 | 東京エレクトロン株式会社 | 整合器及びプラズマ処理装置 |
JP6808596B2 (ja) * | 2017-03-10 | 2021-01-06 | キオクシア株式会社 | センシングシステム |
US10510575B2 (en) * | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
US11551909B2 (en) * | 2017-10-02 | 2023-01-10 | Tokyo Electron Limited | Ultra-localized and plasma uniformity control in a plasma processing system |
-
2018
- 2018-12-06 WO PCT/JP2018/044862 patent/WO2019146267A1/ja unknown
- 2018-12-06 CN CN201880058001.8A patent/CN111052320B/zh active Active
- 2018-12-06 US US16/624,414 patent/US10991591B2/en active Active
- 2018-12-06 JP JP2019567888A patent/JP6852197B2/ja active Active
- 2018-12-06 EP EP18902867.3A patent/EP3748668B1/en active Active
- 2018-12-06 KR KR1020207024825A patent/KR102330944B1/ko active IP Right Grant
- 2018-12-17 TW TW107145403A patent/TWI770331B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP3748668B1 (en) | 2022-08-24 |
EP3748668A1 (en) | 2020-12-09 |
KR102330944B1 (ko) | 2021-12-01 |
KR20200111787A (ko) | 2020-09-29 |
US10991591B2 (en) | 2021-04-27 |
JPWO2019146267A1 (ja) | 2020-04-09 |
WO2019146267A1 (ja) | 2019-08-01 |
CN111052320A (zh) | 2020-04-21 |
EP3748668A4 (en) | 2021-10-27 |
US20200219729A1 (en) | 2020-07-09 |
CN111052320B (zh) | 2023-04-14 |
TWI770331B (zh) | 2022-07-11 |
TW201941296A (zh) | 2019-10-16 |
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