JP6835243B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6835243B2 JP6835243B2 JP2019549271A JP2019549271A JP6835243B2 JP 6835243 B2 JP6835243 B2 JP 6835243B2 JP 2019549271 A JP2019549271 A JP 2019549271A JP 2019549271 A JP2019549271 A JP 2019549271A JP 6835243 B2 JP6835243 B2 JP 6835243B2
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- 239000004065 semiconductor Substances 0.000 title claims description 351
- 229910052751 metal Inorganic materials 0.000 claims description 441
- 239000002184 metal Substances 0.000 claims description 441
- 239000000758 substrate Substances 0.000 claims description 192
- 230000036413 temperature sense Effects 0.000 claims description 192
- 230000002093 peripheral effect Effects 0.000 claims description 68
- 238000009529 body temperature measurement Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 9
- 238000012360 testing method Methods 0.000 claims description 3
- 238000012216 screening Methods 0.000 claims description 2
- 238000010998 test method Methods 0.000 claims 3
- 239000010410 layer Substances 0.000 description 389
- 239000011229 interlayer Substances 0.000 description 33
- 238000010586 diagram Methods 0.000 description 26
- 239000011800 void material Substances 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 238000001514 detection method Methods 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 239000004020 conductor Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910000676 Si alloy Inorganic materials 0.000 description 4
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
特許文献1 特開2017−103400号公報
特許文献2 特開2015−207736号公報
Claims (18)
- 半導体基板と、
前記半導体基板に設けられ、前記半導体基板の上面および下面の間で電流が流れる活性部と、
前記活性部に設けられるトランジスタ部と、
前記トランジスタ部に電気的に接続され、前記トランジスタ部にゲート電圧を供給するゲート金属層と、
前記半導体基板の上面に配置され、前記ゲート金属層と電気的に接続されるゲートパッドと、
前記半導体基板の上面において前記活性部の上方に設けられた温度センス部と、
前記半導体基板の上面において、前記活性部と前記半導体基板の外周端との間の外周領域に配置された温度測定用パッドと、
前記半導体基板の上面において予め定められた長手方向に延伸する長手部分を有し、前記温度センス部と前記温度測定用パッドとを接続する温度センス配線と、
前記ゲート金属層よりも内側に設けられる金属の内側電極と、
前記外周領域に配置され、前記内側電極と電気的に接続された1つ以上の電圧供給パッドと、
前記活性部に設けられ、前記半導体基板の上面における予め定められた配列方向に沿って前記トランジスタ部と交互に配列されたダイオード部と、
前記ダイオード部に電気的に接続され、前記ダイオード部にダミーゲート電圧を供給するダミーゲート金属層と
を備え、
前記半導体基板の上面において、前記ゲートパッドは、前記温度センス配線の前記長手部分を前記長手方向に前記半導体基板の外周端まで延伸した延伸領域以外の領域に配置され、
前記ゲートパッドは、前記外周領域に配置されている
半導体装置。 - 前記ゲート金属層は、前記半導体基板の上面視で、前記活性部を囲うように設けられ、
前記ダミーゲート金属層は、前記半導体基板の上面視で、前記ゲート金属層の内側に、前記活性部を囲うように設けられる、
請求項1に記載の半導体装置。 - 半導体基板と、
前記半導体基板に設けられ、前記半導体基板の上面および下面の間で電流が流れる活性部と、
前記活性部に設けられるトランジスタ部と、
前記トランジスタ部に電気的に接続され、前記トランジスタ部にゲート電圧を供給するゲート金属層と、
前記半導体基板の上面に配置され、前記ゲート金属層と電気的に接続されるゲートパッドと、
前記半導体基板の上面において前記活性部の上方に設けられた温度センス部と、
前記半導体基板の上面において、前記活性部と前記半導体基板の外周端との間の外周領域に配置された温度測定用パッドと、
前記半導体基板の上面において予め定められた長手方向に延伸する長手部分を有し、前記温度センス部と前記温度測定用パッドとを接続する温度センス配線と、
前記ゲート金属層よりも内側に設けられる金属の内側電極と、
前記外周領域に配置され、前記内側電極と電気的に接続された1つ以上の電圧供給パッドと
を備え、
前記半導体基板の上面において、前記ゲートパッドは、前記温度センス配線の前記長手部分を前記長手方向に前記半導体基板の外周端まで延伸した延伸領域以外の領域に配置され、
前記ゲートパッドは、前記外周領域に配置され、
前記ゲート金属層は、前記外周領域に配置された外側ゲート金属層と、前記活性部の上方に配置され前記外側ゲート金属層と接続される内側ゲート金属層とを有し、
前記活性部において前記半導体基板の上方に設けられ、一端が前記内側ゲート金属層に接続され、他端が前記内側ゲート金属層または前記外側ゲート金属層に接続された、半導体材料を含むゲートランナーを更に備え、
前記内側電極は、
前記半導体基板の上面視において前記内側ゲート金属層および前記ゲートランナーを境界として分離して配置された第1領域および第2領域と、
前記ゲートランナーの上方において、前記第1領域および前記第2領域を接続する接続領域と
を有する
半導体装置。 - 前記ダミーゲート金属層は、前記外周領域に配置された外側ダミーゲート金属層と、前記活性部の上方に配置され前記外側ダミーゲート金属層と接続される内側ダミーゲート金属層とを有し、
前記半導体装置は、前記活性部において前記半導体基板の上方に設けられ、一端が前記内側ダミーゲート金属層に接続され、他端が前記内側ダミーゲート金属層または前記外側ダミーゲート金属層に接続された、半導体材料を含むダミーゲートランナーを更に備え、
前記内側電極は、
前記半導体基板の上面視において前記内側ダミーゲート金属層および前記ダミーゲートランナーを境界として分離して配置された第1領域および第2領域と、
前記ダミーゲートランナーの上方において、前記第1領域および前記第2領域を接続する接続領域と
を有する請求項1または2に記載の半導体装置。 - 前記温度センス配線の前記長手方向が前記配列方向と一致している、
請求項1または2に記載の半導体装置。 - 前記温度センス部は、前記半導体基板の上面視において2つの前記トランジスタ部に挟まれている、請求項1から5のいずれか一項に記載の半導体装置。
- 半導体基板と、
前記半導体基板に設けられ、前記半導体基板の上面および下面の間で電流が流れる活性部と、
前記活性部に設けられるトランジスタ部と、
前記トランジスタ部に電気的に接続され、前記トランジスタ部にゲート電圧を供給するゲート金属層と、
前記半導体基板の上面に配置され、前記ゲート金属層と電気的に接続されるゲートパッドと、
前記半導体基板の上面において前記活性部の上方に設けられた温度センス部と、
前記半導体基板の上面において、前記活性部と前記半導体基板の外周端との間の外周領域に配置された温度測定用パッドと、
前記半導体基板の上面において予め定められた長手方向に延伸する長手部分を有し、前記温度センス部と前記温度測定用パッドとを接続する温度センス配線と、
前記ゲート金属層よりも内側に設けられる金属の内側電極と、
前記外周領域に配置され、前記内側電極と電気的に接続された1つ以上の電圧供給パッドと、
前記外周領域において前記活性部と前記電圧供給パッドとの間の領域に設けられ、両端が前記ゲート金属層に接続される、半導体材料を含むゲートランナーと
を備え、
前記半導体基板の上面において、前記ゲートパッドは、前記温度センス配線の前記長手部分を前記長手方向に前記半導体基板の外周端まで延伸した延伸領域以外の領域に配置され、
前記ゲートパッドは、前記外周領域に配置され、
前記ゲートランナーの両端を結ぶ方向において、前記ゲートランナーの一端が接続される前記ゲート金属層の端から、前記ゲートランナーの他端が接続される前記ゲート金属層の端までの幅が、前記ゲートランナーの前記一端に接続された前記ゲート金属層の幅よりも大きい、
半導体装置。 - 前記外周領域を前記温度センス配線の前記長手部分および前記長手部分の延長線で2分割した2つの分割領域のうち、同一の分割領域に前記ゲートパッドおよび全ての前記電圧供給パッドが配置されている
請求項1から7のいずれか一項に記載の半導体装置。 - 前記温度測定用パッドが、2つの前記分割領域のうち、前記ゲートパッドおよび前記電圧供給パッドとは異なる前記分割領域に配置されている
請求項8に記載の半導体装置。 - 前記活性部に設けられ、前記半導体基板の上面における予め定められた配列方向に沿って前記トランジスタ部と交互に配列されたダイオード部と、
前記ダイオード部に電気的に接続され、前記ダイオード部にダミーゲート電圧を供給するダミーゲート金属層と
を備え、
前記ゲートパッドと同一の前記分割領域に設けられた前記電圧供給パッドのうちの1つは、前記ダミーゲート金属層と電気的に接続されるダミーゲートパッドである、
請求項8または9に記載の半導体装置。 - 前記内側電極はエミッタ電極であり、
前記ゲートパッドと同一の前記分割領域に設けられた前記電圧供給パッドのうちの1つは、前記エミッタ電極と電気的に接続されるケルビンパッドである、
請求項8から10のいずれか一項に記載の半導体装置。 - 前記ゲート金属層の一部が、前記温度センス配線の長手方向と垂直な方向において前記温度センス配線と前記エミッタ電極との間に配置され、且つ、前記温度センス配線に沿って設けられる、請求項11に記載の半導体装置。
- 前記トランジスタ部は、ダミー導電部とダミー絶縁膜を有するダミートレンチ部を有し、
前記ダミーゲート金属層は、前記ダミートレンチ部の前記ダミー導電部と電気的に接続する
請求項1、2、4、5および10のいずれか一項に記載の半導体装置。 - 前記ダイオード部は、ダミー導電部とダミー絶縁膜を有するダミートレンチ部を有し、
前記ダミーゲート金属層は、前記ダミートレンチ部の前記ダミー導電部と電気的に接続する
請求項1、2、4、5および10のいずれか一項に記載の半導体装置。 - 半導体基板と、
前記半導体基板に設けられ、前記半導体基板の上面および下面の間で電流が流れる活性部と、
前記活性部に設けられるトランジスタ部と、
前記トランジスタ部に電気的に接続され、前記トランジスタ部にゲート電圧を供給するゲート金属層と、
エミッタ電極と、
前記半導体基板の上面において前記活性部の上方に設けられた温度センス部と、
前記半導体基板の上面において、前記活性部と前記半導体基板の外周端との間の外周領域に配置された温度測定用パッドと、
前記半導体基板の上面において予め定められた長手方向に延伸する長手部分を有し、前記温度センス部と前記温度測定用パッドとを接続する温度センス配線と、
を備え、
前記ゲート金属層の一部が、前記温度センス配線の長手方向と垂直な方向において前記温度センス配線と前記エミッタ電極との間に配置され、且つ、前記温度センス配線に沿って設けられ、
前記活性部に設けられるダイオード部をさらに備え、
前記温度センス配線に沿って設けられる前記ゲート金属層は、前記温度センス配線の長手方向と垂直な方向において、前記温度センス配線と前記ダイオード部との間に挟まれる、
半導体装置。 - 前記トランジスタ部と前記ダイオード部が前記温度センス配線に沿って配列される
請求項15に記載の半導体装置。 - 前記トランジスタ部は、ゲート導電部とゲート絶縁膜を有するゲートトレンチ部を有し、
前記ゲート金属層は、前記ゲートトレンチ部の前記ゲート導電部と電気的に接続する
請求項1から16のいずれか一項に記載の半導体装置。 - 半導体装置を試験する試験方法であって、
前記半導体装置は、
半導体基板と、
前記半導体基板に設けられ、前記半導体基板の上面および下面の間で電流が流れる活性部と、
前記活性部に設けられるトランジスタ部と、
前記トランジスタ部に電気的に接続され、前記トランジスタ部にゲート電圧を供給するゲート金属層と、
前記半導体基板の上面に配置され、前記ゲート金属層と電気的に接続されるゲートパッドと、
前記半導体基板の上面において前記活性部の上方に設けられた温度センス部と、
前記半導体基板の上面において、前記活性部と前記半導体基板の外周端との間の外周領域に配置された温度測定用パッドと、
前記半導体基板の上面において予め定められた長手方向に延伸する長手部分を有し、前記温度センス部と前記温度測定用パッドとを接続する温度センス配線と、
前記ゲート金属層よりも内側に設けられる金属の内側電極と、
前記外周領域に配置され、前記内側電極と電気的に接続された1つ以上の電圧供給パッドと、
前記活性部に設けられ、前記半導体基板の上面における予め定められた配列方向に沿って前記トランジスタ部と交互に配列されたダイオード部と、
前記ダイオード部に電気的に接続され、前記ダイオード部にダミーゲート電圧を供給するダミーゲート金属層と
を備え、
前記半導体基板の上面において、前記ゲートパッドは、前記温度センス配線の前記長手部分を前記長手方向に前記半導体基板の外周端まで延伸した延伸領域以外の領域に配置され、
前記ゲートパッドは、前記外周領域に配置されていて、
前記トランジスタ部および前記ダイオード部の少なくとも一方は、導電部と絶縁膜を有するダミートレンチ部を有し、
前記ダミーゲート金属層は、前記ダミートレンチ部の前記導電部と電気的に接続し、
前記試験方法は、前記ダミーゲート金属層に前記ダミーゲート電圧を供給することで、前記ダミートレンチ部の前記導電部と前記ダミートレンチ部の前記絶縁膜の絶縁性をスクリーニングする
試験方法。
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