JP6820934B2 - パワーモジュールおよびその製造方法 - Google Patents
パワーモジュールおよびその製造方法 Download PDFInfo
- Publication number
- JP6820934B2 JP6820934B2 JP2018537041A JP2018537041A JP6820934B2 JP 6820934 B2 JP6820934 B2 JP 6820934B2 JP 2018537041 A JP2018537041 A JP 2018537041A JP 2018537041 A JP2018537041 A JP 2018537041A JP 6820934 B2 JP6820934 B2 JP 6820934B2
- Authority
- JP
- Japan
- Prior art keywords
- silicone gel
- power module
- case
- insulating substrate
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title description 10
- 229920001296 polysiloxane Polymers 0.000 claims description 175
- 239000000758 substrate Substances 0.000 claims description 77
- 239000004065 semiconductor Substances 0.000 claims description 65
- 229920005989 resin Polymers 0.000 claims description 33
- 239000011347 resin Substances 0.000 claims description 33
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 8
- 230000000717 retained effect Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 description 32
- 238000001723 curing Methods 0.000 description 19
- 229910000679 solder Inorganic materials 0.000 description 19
- 238000002347 injection Methods 0.000 description 18
- 239000007924 injection Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 238000005304 joining Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 238000003825 pressing Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000005187 foaming Methods 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 102100040287 GTP cyclohydrolase 1 feedback regulatory protein Human genes 0.000 description 2
- 101710185324 GTP cyclohydrolase 1 feedback regulatory protein Proteins 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- 241000577218 Phenes Species 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00012—Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
図1は、この発明の実施の形態1によるパワーモジュール100を示す断面構造の模式図である。図1において、パワーモジュール100は、ベース板1、絶縁基板2、半導体素子であるパワー半導体素子7、ボンディングワイヤ9、端子10、ケース部材であるケース3、蓋材である蓋4、充填部材であるシリコーンゲル11、ハンダ5,8を備える。
図4は、この発明の実施の形態2によるパワーモジュール200を示す断面構造の模式図である。図4において、パワーモジュール200は、ベース板1、絶縁基板2、半導体素子であるパワー半導体素子7、ボンディングワイヤ9、端子10、ケース部材であるケース3、蓋材である蓋4、第一の充填部材であるシリコーンゲル11、ハンダ5,8、注入穴14、第二の充填部材である膨張性樹脂13を備える。
図8は、この発明の実施の形態3によるパワーモジュール300を示す断面構造の模式図である。図8において、パワーモジュール300は、ベース板1、絶縁基板2、半導体素子であるパワー半導体素子7、ボンディングワイヤ9、端子10、ケース部材であるケース3、蓋材である蓋4、充填部材であるシリコーンゲル11、ハンダ5,8、プリント基板15を備える。
図9は、この発明の実施の形態4によるパワーモジュール400を示す断面構造の模式図である。図9において、パワーモジュール400は、ベース板1、絶縁基板2、半導体素子であるパワー半導体素子7、ボンディングワイヤ9、端子10、ケース部材であるケース3、蓋材である蓋4、充填部材であるシリコーンゲル11、ハンダ5,8、注入穴14、膨張性樹脂13、プリント基板15を備える。
本実施の形態5は、実施の形態1において、低温下で蓋4とケース3とを固定する工程としたことが異なる。
Claims (4)
- 表面にパワー半導体素子を搭載した絶縁基板と、
前記絶縁基板の裏面に接合されたベース板と、
前記ベース板に固定され前記絶縁基板を取り囲むケースと、
前記ケースに固定され密閉領域を形成する蓋と、
前記密閉領域の全域に充填される充填部材と
を備え、
前記充填部材は、第一の充填部材と第二の充填部材とを有し、前記第一の充填部材は、シリコーンゲルで前記密閉領域の内、前記パワー半導体素子を被う領域に充填され、前記蓋と接する前記密閉領域の残りの領域の全域を前記第二の充填部材で充填し、前記蓋は、前記第二の充填部材を介して前記第一の充填部材の内部応力が圧縮応力に保たれるように前記ケースに固定されることを特徴とするパワーモジュール。 - 請求項1に記載のパワーモジュールであって、
前記密閉領域に前記パワー半導体素子と電気的に接続するプリント基板をさらに備えたことを特徴とするパワーモジュール。 - 請求項1に記載のパワーモジュールであって、
前記第二の充填部材は、膨張性樹脂であることを特徴とするパワーモジュール。 - 請求項3に記載のパワーモジュールであって、
前記膨張性樹脂は、発泡性ウレタン樹脂であることを特徴とするパワーモジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016170511 | 2016-09-01 | ||
JP2016170511 | 2016-09-01 | ||
PCT/JP2017/027407 WO2018042973A1 (ja) | 2016-09-01 | 2017-07-28 | パワーモジュールおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018042973A1 JPWO2018042973A1 (ja) | 2019-06-24 |
JP6820934B2 true JP6820934B2 (ja) | 2021-01-27 |
Family
ID=61301027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018537041A Active JP6820934B2 (ja) | 2016-09-01 | 2017-07-28 | パワーモジュールおよびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10937708B2 (ja) |
JP (1) | JP6820934B2 (ja) |
CN (1) | CN109729738A (ja) |
DE (1) | DE112017004390T5 (ja) |
WO (1) | WO2018042973A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7258806B2 (ja) | 2020-03-23 | 2023-04-17 | 株式会社東芝 | 半導体装置 |
JPWO2022239154A1 (ja) * | 2021-05-12 | 2022-11-17 | ||
CN217904884U (zh) * | 2022-06-16 | 2022-11-25 | 苏州汇川控制技术有限公司 | 智能功率模块及电气设备 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10173098A (ja) | 1996-12-10 | 1998-06-26 | Mitsubishi Electric Corp | パワー半導体装置およびその製法 |
JP3223835B2 (ja) * | 1997-03-28 | 2001-10-29 | 三菱電機株式会社 | パワー半導体装置及びその製造方法 |
JP3518407B2 (ja) * | 1999-02-25 | 2004-04-12 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP4130527B2 (ja) | 2000-12-13 | 2008-08-06 | 三菱電機株式会社 | 半導体装置 |
JP5892796B2 (ja) * | 2012-01-20 | 2016-03-23 | 富士電機株式会社 | 高圧モジュール |
JP2015126123A (ja) * | 2013-12-26 | 2015-07-06 | 日東電工株式会社 | 半導体パッケージの製造方法 |
JP6523089B2 (ja) | 2015-07-23 | 2019-05-29 | ローレル精機株式会社 | 現金処理機 |
-
2017
- 2017-07-28 JP JP2018537041A patent/JP6820934B2/ja active Active
- 2017-07-28 WO PCT/JP2017/027407 patent/WO2018042973A1/ja active Application Filing
- 2017-07-28 US US16/316,272 patent/US10937708B2/en active Active
- 2017-07-28 DE DE112017004390.5T patent/DE112017004390T5/de not_active Withdrawn
- 2017-07-28 CN CN201780051150.7A patent/CN109729738A/zh not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
CN109729738A (zh) | 2019-05-07 |
US20190214322A1 (en) | 2019-07-11 |
WO2018042973A1 (ja) | 2018-03-08 |
DE112017004390T5 (de) | 2019-05-16 |
US10937708B2 (en) | 2021-03-02 |
JPWO2018042973A1 (ja) | 2019-06-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108242401B (zh) | 用于制造电子模块组件的方法和电子模块组件 | |
JP6164364B2 (ja) | 半導体装置 | |
JP5518000B2 (ja) | パワーモジュールとその製造方法 | |
JP6526229B2 (ja) | パワーモジュール | |
JP6309112B2 (ja) | パワーモジュール | |
TW201123370A (en) | Semiconductor package structures, flip chip packages, and methods for manufacturing semiconductor flip chip package | |
JP6820934B2 (ja) | パワーモジュールおよびその製造方法 | |
JP6676079B2 (ja) | 半導体装置およびその製造方法 | |
US20130056883A1 (en) | Semiconductor device and method of manufacturing the same | |
US20100327421A1 (en) | Ic package design with stress relief feature | |
EP1739740A2 (en) | Power semiconductor | |
JP2012119597A (ja) | 半導体装置及びその製造方法 | |
JP6643975B2 (ja) | 半導体装置の製造方法 | |
JP6381784B2 (ja) | パワーモジュール | |
US20220051960A1 (en) | Power Semiconductor Module Arrangement and Method for Producing the Same | |
JPH10173098A (ja) | パワー半導体装置およびその製法 | |
JP6101507B2 (ja) | 半導体装置の製造方法 | |
WO2023073831A1 (ja) | 半導体装置及び半導体装置の製造方法 | |
JP4589009B2 (ja) | 電力用半導体装置 | |
JP7332528B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2001024093A (ja) | 半導体装置 | |
JP2022181779A (ja) | 半導体装置および半導体装置の製造方法 | |
JPH04350957A (ja) | 電力用半導体モジュール | |
JPS6164144A (ja) | 半導体装置 | |
JP2022044158A (ja) | 半導体モジュールの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190206 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190206 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200414 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200611 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201208 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210105 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6820934 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |