JP6804392B2 - Plasma processing equipment and gas shower head - Google Patents
Plasma processing equipment and gas shower head Download PDFInfo
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- JP6804392B2 JP6804392B2 JP2017111200A JP2017111200A JP6804392B2 JP 6804392 B2 JP6804392 B2 JP 6804392B2 JP 2017111200 A JP2017111200 A JP 2017111200A JP 2017111200 A JP2017111200 A JP 2017111200A JP 6804392 B2 JP6804392 B2 JP 6804392B2
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- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- 238000005192 partition Methods 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 23
- 238000009792 diffusion process Methods 0.000 claims description 22
- 239000012212 insulator Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 10
- 230000005684 electric field Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- -1 Polytetrafluoroethylene Polymers 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
本発明は、プラズマ処理装置及びガスシャワーヘッドに関する。 The present invention relates to a plasma processing apparatus and a gas shower head.
誘導結合により処理ガスをプラズマ化し、処理容器内の載置台に載置された被処理基板をプラズマ処理する誘導結合型のプラズマ処理装置が知られている。かかるプラズマ処理装置では、プラズマ処理装置の上部に設けられた金属窓となる板状部材に複数のガス孔を設け、複数のガス孔から処理容器内に処理ガスを供給するガスシャワーヘッドが提案されている（例えば、特許文献１を参照）。 An inductively coupled plasma processing apparatus is known in which a processing gas is converted into plasma by inductive coupling and plasma processing is performed on a substrate to be processed placed on a mounting table in a processing container. In such a plasma processing apparatus, a gas shower head is proposed in which a plurality of gas holes are provided in a plate-shaped member to be a metal window provided in the upper part of the plasma processing apparatus, and the processing gas is supplied into the processing container from the plurality of gas holes. (See, for example, Patent Document 1).
金属窓が複数の部分窓部に分割されている場合、部分窓部間を絶縁体により仕切ることで、隣接する部分窓部の間を電気的に絶縁し、隣接する部分窓部間に跨って高周波の電流が流れないようにしている。このような金属窓の構造では、部分窓部の間にガス孔を設けることができないため、部分窓部間の下方に位置する処理容器内の空間にガスを供給することが困難になる。この結果、部分窓部の間の下方におけるエッチングレートが低下する等、プラズマプロセスの結果に分布が生じる。 When the metal window is divided into a plurality of partial windows, the partial windows are partitioned by an insulator to electrically insulate the adjacent partial windows and straddle the adjacent partial windows. It prevents high frequency current from flowing. In such a metal window structure, since gas holes cannot be provided between the partial window portions, it becomes difficult to supply gas to the space in the processing container located below between the partial window portions. As a result, the result of the plasma process is distributed, such as a decrease in the etching rate below between the partial windows.
これに対して、処理容器内に供給するガス流量を増やして、部分窓部の間の下方におけるエッチングレートを高めることが考えられる。しかしながら、この場合、部分窓部の直下のエッチングレートが高くなり過ぎてしまい、エッチング等のプラズマプロセスの均一性を改善することはできない。 On the other hand, it is conceivable to increase the gas flow rate supplied into the processing container to increase the etching rate in the lower part between the partial windows. However, in this case, the etching rate directly under the partial window portion becomes too high, and the uniformity of the plasma process such as etching cannot be improved.
上記課題に対して、一側面では、本発明は、プラズマプロセスの均一性を改善することを目的とする。 In response to the above problems, in one aspect, the present invention aims to improve the uniformity of the plasma process.
上記課題を解決するために、一の態様によれば、処理容器内の載置台に載置された被処理基板をプラズマ処理するプラズマ処理装置であって、前記載置台に対向して前記処理容器に形成された、複数の導電性の部分窓部を有する金属窓と、前記部分窓部の間、及び前記部分窓部と前記処理容器との間に設けられる絶縁物の仕切部材と、前記金属窓の上方側に設けられ、誘導結合により処理ガスをプラズマ化するアンテナと、前記仕切部材の前記処理容器の側の面を覆い、隣接する前記部分窓部の縁部を跨ぐ絶縁体のカバー部材とを有し、複数の前記部分窓部のそれぞれは、複数の第１のガス孔を有し、前記カバー部材は、複数の第２のガス孔を有し、該カバー部材の内部にて複数の前記第１のガス孔の少なくともいずれかと複数の前記第２のガス孔とが連通するように前記処理容器の側の面に延在するプラズマ処理装置が提供される。 In order to solve the above-mentioned problems, according to one aspect, the processing apparatus is a plasma processing apparatus that plasma-treats a substrate to be processed placed on a mounting table in a processing container, and the processing container faces the above-mentioned table. A metal window having a plurality of conductive partial windows formed in the above, a partition member of an insulator provided between the partial windows, and between the partial window and the processing container, and the metal. An antenna provided on the upper side of the window that converts the processing gas into plasma by inductive coupling, and an insulator cover member that covers the surface of the partition member on the side of the processing container and straddles the edge of the adjacent partial window portion. Each of the plurality of partial window portions has a plurality of first gas holes, and the cover member has a plurality of second gas holes, and a plurality of the cover members are provided inside the cover member. Provided is a plasma processing apparatus extending on a side surface of the processing container so that at least one of the first gas holes and a plurality of the second gas holes communicate with each other.
一の側面によれば、プラズマプロセスの均一性を改善することができる。 According to one aspect, the uniformity of the plasma process can be improved.
以下、本発明を実施するための形態について図面を参照して説明する。なお、本明細書及び図面において、実質的に同一の構成については、同一の符号を付することにより重複した説明を省く。 Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In the present specification and the drawings, substantially the same configuration is designated by the same reference numerals to omit duplicate explanations.
［プラズマ処理装置の全体構成］
まず、本発明の一実施形態に係るプラズマ処理装置１の全体構成について、図１を参照しながら説明する。図１は、本発明の一実施形態に係るプラズマ処理装置１の全体構成を示す。本実施形態では、プラズマ処理装置１の一例として誘導結合型のプラズマエッチング装置を挙げる。
[Overall configuration of plasma processing equipment]
First, the overall configuration of the plasma processing apparatus 1 according to the embodiment of the present invention will be described with reference to FIG. FIG. 1 shows the overall configuration of the plasma processing apparatus 1 according to the embodiment of the present invention. In the present embodiment, an inductively coupled plasma etching apparatus is given as an example of the plasma processing apparatus 1.
ただし、本実施形態に係るプラズマ処理装置１は、エッチング装置に限らず、誘導結合型の成膜装置であってもよい。プラズマ処理装置１は、被処理基板である矩形基板、例えば、ＦＰＤ（Flat Panel Display）用のガラス基板（以下。「基板Ｇ」と記す）上に薄膜トランジスタを形成する際のメタル膜、ＩＴＯ（Indium Tin Oxide）膜、酸化膜などを形成する成膜処理やこれらの膜をエッチングするエッチング処理、レジスト膜のアッシング処理などの各種プラズマ処理に用いることができる。ここで、ＦＰＤとしては、液晶ディスプレイ（ＬＣＤ:Liquid Crystal Display）、エレクトロルミネセンス（ＥＬ:Electro Luminescence）ディスプレイ、プラズマディスプレイパネル（ＰＤＰ:Plasma Display Panel）などが例示される。また、プラズマ処理装置１は、ＦＰＤ用の基板Ｇに限らず、太陽電池パネル用の基板Ｇに対する上述の各種プラズマ処理にも用いることができる。 However, the plasma processing apparatus 1 according to the present embodiment is not limited to the etching apparatus, and may be an inductively coupled film forming apparatus. The plasma processing apparatus 1 is an ITO (Indium), which is a metal film for forming a thin film transistor on a rectangular substrate which is a substrate to be processed, for example, a glass substrate for an FPD (Flat Panel Display) (hereinafter referred to as “substrate G”). It can be used for various plasma treatments such as a thin film transistor forming a Tin Oxide) film, an oxide film, an etching process for etching these films, and an ashing process for a resist film. Here, examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, and a plasma display panel (PDP). Further, the plasma processing device 1 can be used not only for the substrate G for the FPD but also for the various plasma treatments described above for the substrate G for the solar cell panel.
プラズマ処理装置１は、導電性材料、例えば、内壁面が陽極酸化処理されたアルミニウムからなる角筒形状の処理容器１０を有している。処理容器１０は電気的に接地されている。処理容器１０の上面には開口が形成され、開口は金属窓３によって気密に塞がれる。処理容器１０及び金属窓３によって囲まれる空間は、プラズマが生成されるプラズマ処理空間Ｕである。 The plasma processing apparatus 1 has a square cylinder-shaped processing container 10 made of a conductive material, for example, aluminum whose inner wall surface has been anodized. The processing container 10 is electrically grounded. An opening is formed on the upper surface of the processing container 10, and the opening is hermetically closed by the metal window 3. The space surrounded by the processing container 10 and the metal window 3 is the plasma processing space U in which plasma is generated.
処理容器１０の側壁の上面側には、金属枠１１が設けられている。金属窓３の上方側には天板部６１が配置され、天板部６１は、金属枠１１上に設けられた側壁部６３によって支持されている。処理容器１０と金属枠１１との間には、Ｏリング等のシール部材１１０が設けられ、プラズマ処理空間Ｕを気密に保つようになっている。処理容器１０及び金属枠１１は本実施形態の処理容器１０を構成している。プラズマ処理空間Ｕの側壁には、ガラス基板Ｇを搬入出するための搬入出口１０１および搬入出口１０１を開閉するゲートバルブ１０２が設けられている。 A metal frame 11 is provided on the upper surface side of the side wall of the processing container 10. A top plate portion 61 is arranged on the upper side of the metal window 3, and the top plate portion 61 is supported by a side wall portion 63 provided on the metal frame 11. A sealing member 110 such as an O-ring is provided between the processing container 10 and the metal frame 11 to keep the plasma processing space U airtight. The processing container 10 and the metal frame 11 constitute the processing container 10 of the present embodiment. On the side wall of the plasma processing space U, a carry-in outlet 101 for carrying in and out the glass substrate G and a gate valve 102 for opening and closing the carry-in outlet 101 are provided.
金属窓３、側壁部６３及び天板部６１にて囲まれた空間はアンテナ室５０となっている。アンテナ室５０の内部には、部分窓部３０に面するように高周波アンテナ５が配置されている。高周波アンテナ５は、例えば、図示しない絶縁体からなるスペーサを介して部分窓部３０から離間して配置される。高周波アンテナ５は、各部分窓部３０に対応する面内で、矩形状の金属窓３の周方向に沿って周回するように、渦巻状に形成される。なお、高周波アンテナ５の形状は、渦巻に限定されるものではなく、一本または複数のアンテナ線を環状にした環状アンテナであってもよい。なお、金属窓３や金属窓３を構成する各部分窓部３０に対応する面内で、その周方向に沿って周回するようにアンテナ線が設けられていれば、高周波アンテナ５の構造は問わない。 The space surrounded by the metal window 3, the side wall portion 63, and the top plate portion 61 is the antenna chamber 50. Inside the antenna chamber 50, a high frequency antenna 5 is arranged so as to face the partial window portion 30. The high-frequency antenna 5 is arranged apart from the partial window portion 30 via, for example, a spacer made of an insulator (not shown). The high-frequency antenna 5 is formed in a spiral shape so as to orbit along the circumferential direction of the rectangular metal window 3 in the plane corresponding to each partial window portion 30. The shape of the high-frequency antenna 5 is not limited to a spiral, and may be an annular antenna in which one or a plurality of antenna wires are annular. The structure of the high-frequency antenna 5 does not matter as long as the antenna wire is provided so as to orbit along the circumferential direction in the plane corresponding to the metal window 3 and each partial window portion 30 constituting the metal window 3. Absent.
図１及びプラズマ処理空間Ｕ側から金属窓３を平面視した図２に示すように、処理容器１０の側壁の上面側に設けられた金属枠１１は、アルミニウムなどの金属からなる矩形状の枠体である。 As shown in FIG. 1 and FIG. 2 in which the metal window 3 is viewed from the plasma processing space U side in a plan view, the metal frame 11 provided on the upper surface side of the side wall of the processing container 10 is a rectangular frame made of metal such as aluminum. The body.
金属窓３は複数の部分窓部３０に分割されている。各部分窓部３０は、例えば非磁性体で導電性の金属、アルミニウムまたはアルミニウムを含む合金などにより構成される。部分窓部３０は必要に応じて種々の形状及び種々の個数に分割される。金属枠１１と部分窓部３０との間、及び隣り合う部分窓部３０の間は、部分窓部３０の分割形状に応じて、絶縁体の仕切部材３１により仕切られている。 The metal window 3 is divided into a plurality of partial window portions 30. Each partial window portion 30 is made of, for example, a non-magnetic material and a conductive metal, aluminum, or an alloy containing aluminum. The partial window portion 30 is divided into various shapes and various numbers as needed. The metal frame 11 and the partial window portion 30 and the adjacent partial window portions 30 are partitioned by an insulator partition member 31 according to the divided shape of the partial window portion 30.
互いに分割された部分窓部３０は、仕切部材３１によって金属枠１１やその下方側の処理容器１０から電気的に絶縁されると共に、隣り合う部分窓部３０同士が仕切部材３１によって電気的に絶縁されている。 The partial window portions 30 separated from each other are electrically insulated from the metal frame 11 and the processing container 10 on the lower side thereof by the partition member 31, and the adjacent partial window portions 30 are electrically insulated from each other by the partition member 31. Has been done.
仕切部材３１は、例えば、テフロン（登録商標）又は樹脂製の絶縁物により形成される。高周波アンテナ５に供給される高周波の電流は、複数の部分窓部３０のそれぞれの表面を流れ、処理容器１０側の面に流れる電流により誘導電界が発生し、発生した誘導電界により金属窓３の下方にて処理ガスが乖離される。 The partition member 31 is formed of, for example, Teflon (registered trademark) or a resin insulator. The high-frequency current supplied to the high-frequency antenna 5 flows on the respective surfaces of the plurality of partial window portions 30, an induced electric field is generated by the current flowing on the surface on the processing container 10 side, and the generated induced electric field causes the metal window 3 to generate an induced electric field. The processing gas is diverged below.
本実施形態では、仕切部材３１により絶縁された複数の部分窓部３０のそれぞれは、電気的に分離されている。このため、本実施形態に係るプラズマ処理装置１では、各部分窓部３０にて別々に誘導電界が発生する。よって、複数の部分窓部３０に生じる誘導電界を各部分窓部３０の大きさや配置によって制御することにより、金属窓３の処理容器１０側の面にて発生する誘導電界を制御することができ、エッチングレートの分布を改善することができる。 In the present embodiment, each of the plurality of partial window portions 30 insulated by the partition member 31 is electrically separated. Therefore, in the plasma processing apparatus 1 according to the present embodiment, an induced electric field is separately generated in each partial window portion 30. Therefore, by controlling the induced electric field generated in the plurality of partial window portions 30 by the size and arrangement of each partial window portion 30, it is possible to control the induced electric field generated on the surface of the metal window 3 on the processing container 10 side. , The distribution of etching rate can be improved.
仕切部材３１の処理容器１０側の面は、絶縁体のカバー部材３２により覆われている。仕切部材３１をプラズマから保護するためには、カバー部材３２は、仕切部材３１のプラズマ処理空間Ｕ側の全ての面を覆うことが好ましい。しかし、仕切部材３１のプラズマ処理空間Ｕ側の全ての面をカバー部材３２により覆うと、処理空間Ｕの側に露出する部分窓部３０の面積が小さくなる。プラズマは、部分窓部３０の処理空間Ｕの側に露出する部分の近傍で生成されるため、部分窓部３０の面積が小さくなるとプラズマの強度が弱くなる。また、カバー部材３２のセラミックスの出っ張りにより誘導電界が弱められる。よって、仕切部材３１のプラズマ処理空間Ｕ側の最小範囲をカバー部材３２により覆うことが好ましい。 The surface of the partition member 31 on the processing container 10 side is covered with the cover member 32 of the insulator. In order to protect the partition member 31 from plasma, it is preferable that the cover member 32 covers all the surfaces of the partition member 31 on the plasma processing space U side. However, if all the surfaces of the partition member 31 on the plasma processing space U side are covered with the cover member 32, the area of the partial window portion 30 exposed on the processing space U side becomes smaller. Since the plasma is generated in the vicinity of the portion of the partial window portion 30 exposed to the processing space U side, the intensity of the plasma becomes weaker as the area of the partial window portion 30 becomes smaller. Further, the induced electric field is weakened by the protrusion of the ceramics of the cover member 32. Therefore, it is preferable that the cover member 32 covers the minimum range of the partition member 31 on the plasma processing space U side.
また、図１に示すように、各部分窓部３０内には、温調流路３０７が形成されている。部分窓部３０は、温調流路３０７に冷却媒体もしくは加熱媒体を通すことで予め設定された温度に調節される。 Further, as shown in FIG. 1, a temperature control flow path 307 is formed in each partial window portion 30. The partial window portion 30 is adjusted to a preset temperature by passing a cooling medium or a heating medium through the temperature control flow path 307.
本実施形態に係るカバー部材３２は、複数に分割され、仕切部材３１の一部を覆うように配置されている。たとえば、各カバー部材３２は、細長い平板状に成形されたアルミナなどのセラミックス製の部材からなる。これにより、複数のカバー部材３２が金属窓３の処理容器１０側を覆う面積を適宜特定することができる。本実施形態では、カバー部材３２は、金属窓３の対角線及び中央の仕切部材３１を覆う。ただし、仕切部材３１を覆う複数のカバー部材３２のサイズや配置は、これに限らず、部分窓部３０の分割数や部分窓部３０の形状に応じて様々なパターンを採用することができる。カバー部材３２の大きさを更に分割したり、カバー部材３２の個数を変えたりしてもよい。カバー部材３２は、プラズマの強度を考慮して仕切部材３１の任意の場所の一部又は全部を覆うように配置することができる。 The cover member 32 according to the present embodiment is divided into a plurality of parts, and is arranged so as to cover a part of the partition member 31. For example, each cover member 32 is made of a ceramic member such as alumina, which is formed into an elongated flat plate. Thereby, the area where the plurality of cover members 32 cover the processing container 10 side of the metal window 3 can be appropriately specified. In the present embodiment, the cover member 32 covers the diagonal line of the metal window 3 and the partition member 31 at the center. However, the size and arrangement of the plurality of cover members 32 that cover the partition member 31 are not limited to this, and various patterns can be adopted depending on the number of divisions of the partial window portion 30 and the shape of the partial window portion 30. The size of the cover member 32 may be further divided, or the number of the cover member 32 may be changed. The cover member 32 can be arranged so as to cover a part or all of the partition member 31 in consideration of the intensity of the plasma.
プラズマ処理装置１において、仕切部材３１にはＰＴＦＥ（Polytetrafluoroethylene）などのフッ素樹脂が採用される。例えばＰＴＦＥは、体積抵抗率が＞１０１８［Ω・ｃｍ（２３℃）］、密度が２．１〜２．２［ｇ／ｃｍ３］程度である。このような樹脂製の仕切部材３１を採用することにより、例えば仕切部材３１の材料としてアルミナ（体積抵抗率＞１０１４程度［Ω・ｃｍ（２３℃）］程度、密度３．９程度［ｇ／ｃｍ３］）を採用する場合と比較して、高い絶縁性能と、仕切部材３１を含む金属窓３の軽量化を同時に実現することができる。 In the plasma processing apparatus 1, a fluororesin such as PTFE (Polytetrafluoroethylene) is used for the partition member 31. For example, PTFE has a volume resistivity of> 10 18 [Ω · cm (23 ° C.)] and a density of about 2.1 to 2.2 [g / cm 3 ]. By adopting such a resin partition member 31, for example, as a material of the partition member 31, alumina (volume resistivity> about 10 14 [Ω · cm (23 ° C.)], density about 3.9 [g / Compared with the case of adopting cm 3 ]), it is possible to simultaneously realize high insulation performance and weight reduction of the metal window 3 including the partition member 31.
図１及び図２に示すように、複数の部分窓部３０のそれぞれには、プラズマ処理空間Ｕ側に開口する多数のガス孔３０２が形成されている。図２には、ガス孔３０２の一部のみ図示しているが、多数のガス孔３０２が、すべての部分窓部３０に形成されている。また、複数のカバー部材３２のぞれぞれには、プラズマ処理空間Ｕ側に開口する多数のガス孔４０２が形成されている。これにより、かかる構成の複数の部分窓部３０及び複数のカバー部材３２は、処理ガスを供給するためのガスシャワーヘッドの機能を有する。 As shown in FIGS. 1 and 2, a large number of gas holes 302 opened on the plasma processing space U side are formed in each of the plurality of partial window portions 30. Although only a part of the gas holes 302 is shown in FIG. 2, a large number of gas holes 302 are formed in all the partial window portions 30. Further, a large number of gas holes 402 that open on the plasma processing space U side are formed in each of the plurality of cover members 32. As a result, the plurality of partial window portions 30 and the plurality of cover members 32 having such a configuration have the function of a gas shower head for supplying the processing gas.
部分窓部３０の耐プラズマ性を向上させるために、各部分窓部３０の処理容器１０側の面は耐プラズマコーティングされている。耐プラズマコーティングの具体例としては、陽極酸化処理やセラミックス溶射処理を挙げることができる。 In order to improve the plasma resistance of the partial window portion 30, the surface of each partial window portion 30 on the processing container 10 side is plasma resistant coated. Specific examples of the plasma resistant coating include anodizing treatment and ceramic spraying treatment.
図１に戻り、プラズマ処理空間Ｕの金属窓３と対向する側には、基板Ｇを載置するための載置台１３が設けられている。載置台１３は、導電性材料、例えば表面が陽極酸化処理されたアルミニウムで構成されている。載置台１３に載置された基板Ｇは、静電チャックにより吸着保持されてもよい。載置台１３は絶縁体枠１４を介して処理容器１０の底面に設置されている。 Returning to FIG. 1, a mounting table 13 for mounting the substrate G is provided on the side of the plasma processing space U facing the metal window 3. The mounting table 13 is made of a conductive material, for example, aluminum whose surface has been anodized. The substrate G mounted on the mounting table 13 may be attracted and held by an electrostatic chuck. The mounting table 13 is installed on the bottom surface of the processing container 10 via the insulator frame 14.
載置台１３には、整合器１５１を介して第２の高周波電源１５２が接続されている。第２の高周波電源１５２は、バイアス用の高周波電力、例えば周波数が３．２ＭＨｚの高周波電力を載置台１３に印加する。バイアス用の高周波電力によりプラズマ中のイオンを基板Ｇに引き込むことができる。なお、載置台１３内には、基板Ｇの温度を制御するために、加熱手段もしくは冷却手段として機能するチラーなどの温調機構、基板Ｇの裏面に伝熱ガスを供給する機構を設けることができる。 A second high-frequency power supply 152 is connected to the mounting table 13 via a matching unit 151. The second high frequency power supply 152 applies high frequency power for bias, for example, high frequency power having a frequency of 3.2 MHz to the mounting table 13. Ions in the plasma can be drawn into the substrate G by the high frequency power for bias. In the mounting table 13, in order to control the temperature of the substrate G, a temperature control mechanism such as a chiller that functions as a heating means or a cooling means, and a mechanism that supplies heat transfer gas to the back surface of the substrate G may be provided. it can.
処理容器１０の底面には、排気口１０３が形成され、この排気口１０３にはターボ分子ポンプやドライポンプなどの排気装置１２が接続されている。プラズマ処理空間Ｕの内部は、排気装置１２によってプラズマ処理時の圧力に真空排気される。 An exhaust port 103 is formed on the bottom surface of the processing container 10, and an exhaust device 12 such as a turbo molecular pump or a dry pump is connected to the exhaust port 103. The inside of the plasma processing space U is evacuated to the pressure at the time of plasma processing by the exhaust device 12.
各高周波アンテナ５には、整合器５１１を介して第１の高周波電源５１２が接続されている。各高周波アンテナ５には、第１の高周波電源５１２から、例えば１３．５６ＭＨｚの高周波電力が供給される。これにより、プラズマ処理中、部分窓部３０それぞれの表面に渦電流が誘起され、この渦電流によってプラズマ処理空間Ｕの内部に誘導電界が形成される。処理ガスは、金属窓３に設けられた複数のガス孔３０２及び複数のガス孔４０２からプラズマ処理空間Ｕに供給され、誘導電界によってプラズマ処理空間Ｕの内部においてプラズマ化される。 A first high-frequency power supply 512 is connected to each high-frequency antenna 5 via a matching unit 511. High-frequency power of, for example, 13.56 MHz is supplied to each high-frequency antenna 5 from the first high-frequency power supply 512. As a result, an eddy current is induced on the surface of each of the partial window portions 30 during the plasma processing, and an induced electric field is formed inside the plasma processing space U by this eddy current. The processing gas is supplied to the plasma processing space U from the plurality of gas holes 302 and the plurality of gas holes 402 provided in the metal window 3, and is turned into plasma inside the plasma processing space U by an induced electric field.
図１に示すように、各部分窓部３０の内部に形成されたガス拡散室３０１は、ガス供給管４１を介してガス供給源４２に接続されている。ガス供給源４２からは、既述の成膜処理、エッチング処理、アッシング処理などに必要な処理ガスが供給される。ガス供給源４２から供給される処理ガスは、ガス供給管４１からガス拡散室３０１を通って、プラズマ処理空間Ｕの天井面側に形成された多数のガス孔３０２、４０２からプラズマ処理空間Ｕ内にシャワー状に供給される。なお、図示の便宜上、図１には、１つの部分窓部３０にガス供給源４２を接続した状態を示してあるが、実際には各部分窓部３０のガス拡散室３０１がガス供給源４２に接続される。 As shown in FIG. 1, the gas diffusion chamber 301 formed inside each partial window portion 30 is connected to the gas supply source 42 via the gas supply pipe 41. The gas supply source 42 supplies the processing gas required for the above-mentioned film forming process, etching process, ashing process, and the like. The processing gas supplied from the gas supply source 42 passes through the gas diffusion chamber 301 from the gas supply pipe 41, and enters the plasma processing space U from a large number of gas holes 302 and 402 formed on the ceiling surface side of the plasma processing space U. It is supplied in the form of a shower. For convenience of illustration, FIG. 1 shows a state in which the gas supply source 42 is connected to one partial window portion 30, but in reality, the gas diffusion chamber 301 of each partial window portion 30 is the gas supply source 42. Connected to.
プラズマ処理装置１には制御部８が設けられている。制御部８はＣＰＵ（Central Processing Unit）とメモリと有するコンピュータからなり、メモリには基板Ｇが配置されたプラズマ処理空間Ｕ内を真空排気し、高周波アンテナ５を用いて処理ガスをプラズマ化して基板Ｇを処理する動作を実行させるためのレシピ（プログラム）が記録されている。レシピは、例えばハードディスク、コンパクトディスク、マグネットオプティカルディスク、メモリカードなどの記憶媒体に格納され、メモリにインストールされてもよい。 The plasma processing device 1 is provided with a control unit 8. The control unit 8 is composed of a computer having a CPU (Central Processing Unit) and a memory. The memory is vacuum exhausted in the plasma processing space U in which the substrate G is arranged, and the processing gas is converted into plasma by using the high frequency antenna 5 to convert the substrate into plasma. A recipe (program) for executing an operation for processing G is recorded. The recipe may be stored in a storage medium such as a hard disk, a compact disc, a magnetic optical disc, or a memory card and installed in the memory.
以上に説明した構成のプラズマ処理装置１において、部分窓部３０間は絶縁体の仕切部材３１により仕切られ、各部分窓部３０内を流れる電流が隣接する部分窓部３０や処理容器１０側に流れないようになっている。このような構造において、隣接する部分窓部３０の間の下方に供給されるガスが少ないと、生成されるプラズマは、隣接する部分窓部３０間の下方で弱くなり、エッチングレート等の分布が改善しない。 In the plasma processing apparatus 1 having the configuration described above, the partial window portions 30 are partitioned by the partition member 31 of the insulator, and the current flowing in each partial window portion 30 is connected to the adjacent partial window portion 30 and the processing container 10 side. It is designed not to flow. In such a structure, if the amount of gas supplied downward between the adjacent partial window portions 30 is small, the generated plasma becomes weak below between the adjacent partial window portions 30, and the distribution of the etching rate and the like becomes weak. Does not improve.
そこで、本実施形態にかかるプラズマ処理装置１に設けられた金属窓３のガスシャワーヘッドは、カバー部材３２に多数のガス孔４０２を設けることで、隣接する部分窓部３０間の下方からも処理ガスの供給を可能とする。以下、第１及び第２実施形態に係る金属窓３のガスシャワーヘッドの構成の詳細について、比較例に係る金属窓３のガスシャワーヘッドと比較しながら、図３〜図５を参照して説明する。 Therefore, the gas shower head of the metal window 3 provided in the plasma processing device 1 according to the present embodiment is treated from below between the adjacent partial window portions 30 by providing a large number of gas holes 402 in the cover member 32. Enables gas supply. Hereinafter, the details of the configuration of the gas shower head of the metal window 3 according to the first and second embodiments will be described with reference to FIGS. 3 to 5 while comparing with the gas shower head of the metal window 3 according to the comparative example. To do.
［金属窓のガスシャワーヘッド］
図３（ａ）の上図は、金属窓３のガスシャワーヘッドの処理容器１０側の面に取り付ける比較例に係るカバー部材２の断面の一例を示す。図３（ａ）の下図は、処理容器１０の天井面の左上１／４の平面を示す。図３（ａ）の上図の断面は、図３（ａ）の下図のＡ−Ａ断面である。図３（ａ）の下図において、ガス孔３０２は省略する。
[Gas shower head with metal window]
The upper view of FIG. 3A shows an example of a cross section of the cover member 2 according to the comparative example attached to the surface of the metal window 3 on the processing container 10 side of the gas shower head. The lower figure of FIG. 3A shows a plane of the upper left 1/4 of the ceiling surface of the processing container 10. The cross section of the upper view of FIG. 3 (a) is the cross section of AA of the lower figure of FIG. 3 (a). In the lower figure of FIG. 3A, the gas hole 302 is omitted.
図３（ｂ）の上図は、金属窓３のガスシャワーヘッドの処理容器１０側の面に、第１実施形態に係るカバー部材３２を取り付けたときの断面の一例を示す。図３（ｂ）の下図は、処理容器１０の天井面の左上１／４の平面を示す。図３（ｂ）の上図の断面は、図３（ｂ）の下図のＢ−Ｂ断面である。 The upper view of FIG. 3B shows an example of a cross section when the cover member 32 according to the first embodiment is attached to the surface of the metal window 3 on the processing container 10 side of the gas shower head. The lower figure of FIG. 3B shows a plane of the upper left 1/4 of the ceiling surface of the processing container 10. The cross section of the upper view of FIG. 3 (b) is the BB cross section of the lower figure of FIG. 3 (b).
＜比較例に係るカバー部材＞
図３（ａ）に示す、金属窓３のガスシャワーヘッドの処理容器１０側の面に取り付ける比較例のカバー部材２は板状部材であり、隣接する部分窓部３０に設けられた絶縁物の仕切部材３１の処理容器１０側の面を覆う。かかる構成では、処理ガスは、部分窓部３０内のガス拡散室３０１にて拡散し、ガス孔３０２から処理容器内の部分窓部３０の下方に供給される。かかる構成では、処理ガスは、部分窓部３０の間に取り付けられたカバー部材２の下方に供給されないため、カバー部材２の下方にてエッチングレートが低下する。
<Cover member according to a comparative example>
The cover member 2 of the comparative example attached to the surface of the gas shower head of the metal window 3 on the processing container 10 side shown in FIG. 3A is a plate-shaped member, and is an insulator provided in the adjacent partial window portion 30. It covers the surface of the partition member 31 on the processing container 10 side. In such a configuration, the processing gas diffuses in the gas diffusion chamber 301 in the partial window portion 30 and is supplied from the gas hole 302 below the partial window portion 30 in the processing container. In such a configuration, the processing gas is not supplied below the cover member 2 attached between the partial window portions 30, so that the etching rate decreases below the cover member 2.
＜第１実施形態に係るカバー部材＞
これに対して、図３（ｂ）に示す、部分窓部３０の間の処理容器１０側の面に取り付ける第１実施形態に係るカバー部材３２は、仕切部材３１を覆い、プラズマから仕切部材３１を保護するとともに、隣接する部分窓部３０の縁部に跨って配置される。
<Cover member according to the first embodiment>
On the other hand, the cover member 32 according to the first embodiment attached to the surface on the processing container 10 side between the partial window portions 30 shown in FIG. 3B covers the partition member 31 and is separated from the plasma. Is protected and is arranged so as to straddle the edge of the adjacent partial window portion 30.
カバー部材３２の内部には、仕切部材３１の両側に２つのガス拡散室４０１が、仕切部材３１の長手方向に沿って平行して設けられる。カバー部材３２には、部分窓部３０の下方の位置に、ガス拡散室４０１に連通する複数のガス孔４０２が形成されている。本実施形態では、複数のガス孔３０２の少なくともいずれかが複数のガス孔４０２と連通するように、カバー部材３２が処理容器１０側の面に延在する。これにより、ガス拡散室４０１には、複数のガス孔３０２の少なくともいずれかから処理ガスが供給される。 Inside the cover member 32, two gas diffusion chambers 401 are provided on both sides of the partition member 31 in parallel along the longitudinal direction of the partition member 31. The cover member 32 is formed with a plurality of gas holes 402 communicating with the gas diffusion chamber 401 at a position below the partial window portion 30. In the present embodiment, the cover member 32 extends to the surface on the processing container 10 side so that at least one of the plurality of gas holes 302 communicates with the plurality of gas holes 402. As a result, the gas diffusion chamber 401 is supplied with the processing gas from at least one of the plurality of gas holes 302.
図４（ａ）に、第１実施形態に係るカバー部材３２の平面図を示すように、複数のガス孔３０２のうち、各部分窓部３０の縁部（最も外側又はその近傍）に形成されたガス孔３０２は、カバー部材３２に覆われている。カバー部材３２には、仕切部材３１の下方の近傍であって複数のガス孔３０２の間に、ガス拡散室４０１に連通する複数のガス孔４０２が形成されている。本実施形態では、カバー部材３２に設けられた複数のガス孔４０２から処理ガスが供給されるガス供給路Ｒ２が設けられる。 As shown in FIG. 4A, which is a plan view of the cover member 32 according to the first embodiment, the gas holes 302 are formed at the edge portion (outermost or in the vicinity thereof) of each partial window portion 30 among the plurality of gas holes 302. The gas hole 302 is covered with a cover member 32. The cover member 32 is formed with a plurality of gas holes 402 communicating with the gas diffusion chamber 401 between the plurality of gas holes 302 in the vicinity below the partition member 31. In the present embodiment, the gas supply path R2 to which the processing gas is supplied from the plurality of gas holes 402 provided in the cover member 32 is provided.
ガス供給路Ｒ２では、各部分窓部３０の縁部に形成されたガス孔３０２からガス拡散室４０１に処理ガスが供給される。ガス供給路Ｒ２では、処理ガスは、ガス拡散室３０１からガス孔３０２を介してガス拡散室４０１に供給され、複数のガス孔４０２からシャワー状に処理容器１０内の部分窓部３０の間の下方に導入される。また、ガス供給路Ｒ１では、処理ガスは、部分窓部３０のそれぞれに形成された多数のガス孔３０２からシャワー状に処理容器１０内の部分窓部３０の下方に導入される。これにより、部分窓部３０に形成された多数のガス孔３０２，４０２から処理ガスをシャワー状に処理容器１０内に導入することができる。 In the gas supply path R2, the processing gas is supplied to the gas diffusion chamber 401 from the gas hole 302 formed at the edge of each partial window portion 30. In the gas supply path R2, the processing gas is supplied from the gas diffusion chamber 301 to the gas diffusion chamber 401 through the gas holes 302, and is shower-like between the partial windows 30 in the processing container 10 from the plurality of gas holes 402. Introduced downwards. Further, in the gas supply path R1, the processing gas is introduced below the partial window portion 30 in the processing container 10 like a shower from a large number of gas holes 302 formed in each of the partial window portions 30. As a result, the processing gas can be introduced into the processing container 10 like a shower from a large number of gas holes 302 and 402 formed in the partial window portion 30.
図４（ｂ）に第１実施形態の変形例を示す。ガス供給路Ｒ２はガス穴３０２の１箇所毎に設けても良く、この場合、図４（ｂ）の変形例に示すように拡散室４０１は複数個所必要となる。 FIG. 4B shows a modified example of the first embodiment. The gas supply path R2 may be provided at each of the gas holes 302, and in this case, a plurality of diffusion chambers 401 are required as shown in the modified example of FIG. 4B.
以上のように本実施形態では、ガス供給路Ｒ１の他にガス供給路Ｒ２が形成される。これにより、本実施形態では、ガス供給路Ｒ１を用いて部分窓部３０に形成された多数のガス孔３０２から部分窓部３０の下方に処理ガスをシャワー状に供給することができる。加えて、ガス供給路Ｒ２を用いてカバー部材３２に形成された多数のガス孔４０２から部分窓部３０の間の下方に処理ガスをシャワー状に供給することができる。 As described above, in the present embodiment, the gas supply path R2 is formed in addition to the gas supply path R1. As a result, in the present embodiment, the processing gas can be supplied in a shower shape below the partial window portion 30 from a large number of gas holes 302 formed in the partial window portion 30 using the gas supply path R1. In addition, the processing gas can be supplied in a shower shape downward between the partial window portions 30 from a large number of gas holes 402 formed in the cover member 32 using the gas supply path R2.
かかる構成により、本実施形態に係る金属窓３のシャワープレートは、ガスの噴き出し口を部分窓部３０の間まで拡張することで、金属窓３の下面からガスを供給する範囲を広げることができる。これにより、金属窓３の下面にて継ぎ目がなく処理ガスを吹き出すことが可能になる。この結果、エッチングレートの分布や成膜レートの分布を良好に制御できる。このようにして、本実施形態によれば、エッチングレート等の分布を改善することができる。 With such a configuration, the shower plate of the metal window 3 according to the present embodiment can expand the range of supplying gas from the lower surface of the metal window 3 by extending the gas outlet to the space between the partial window portions 30. .. This makes it possible to blow out the processing gas seamlessly on the lower surface of the metal window 3. As a result, the distribution of the etching rate and the distribution of the film formation rate can be satisfactorily controlled. In this way, according to the present embodiment, the distribution of the etching rate and the like can be improved.
また、本実施形態に係る金属窓３のシャワープレートでは、カバー部材３２のサイズ及び数を部分窓部３０の形状及び数に応じて最適化し、金属窓３の部分窓部３０の間、及び部分窓部３０と処理容器１０の間の最適位置に複数のカバー部材３２が配置される。これにより、最適位置に置かれた複数のカバー部材３２に形成された多数のガス孔４０２と、部分窓部３０に形成された多数のガス孔３０２とから処理ガスを均一に供給できる。 Further, in the shower plate of the metal window 3 according to the present embodiment, the size and number of the cover members 32 are optimized according to the shape and number of the partial window portions 30, and the space between and the portions of the partial window portions 30 of the metal window 3 are optimized. A plurality of cover members 32 are arranged at the optimum positions between the window portion 30 and the processing container 10. As a result, the processing gas can be uniformly supplied from the large number of gas holes 402 formed in the plurality of cover members 32 placed at the optimum positions and the large number of gas holes 302 formed in the partial window portion 30.
また、プラズマ処理装置１の構造を変えることなく、カバー部材３２を隣接する部分窓部３０の縁部間を跨ぐように配置するだけで、エッチングレート等のプラズマプロセス特性を改善できる。このため、既存のプラズマ処理装置１に容易に本実施形態に係る金属窓３のシャワープレートを適用でき、低コストでエッチングレート等を改善できる。 Further, the plasma process characteristics such as the etching rate can be improved only by arranging the cover member 32 so as to straddle the edges of the adjacent partial window portions 30 without changing the structure of the plasma processing apparatus 1. Therefore, the shower plate of the metal window 3 according to the present embodiment can be easily applied to the existing plasma processing apparatus 1, and the etching rate and the like can be improved at low cost.
なお、ガス孔３０２は、複数の部分窓部３０のそれぞれに形成された第１のガス孔の一例であり、ガス孔４０２は、カバー部材３２に形成された第２のガス孔の一例である。 The gas hole 302 is an example of a first gas hole formed in each of the plurality of partial window portions 30, and the gas hole 402 is an example of a second gas hole formed in the cover member 32. ..
＜第２実施形態に係るカバー部材＞
図３（ｂ）のＬに示すように、第１実施形態に係る金属窓３では、カバー部材３２の外周側にて、カバー部材３２が部分窓部３０に接触する部分Ｌの隙間からガスが漏れることがある。つまり、部分窓部３０に接触する部分Ｌでは隙間の管理ができず、プラズマ処理装置１間の機差によりガスの漏れ量が制御できないため、ガス供給量のばらつきの原因となる場合がある。
<Cover member according to the second embodiment>
As shown in L of FIG. 3B, in the metal window 3 according to the first embodiment, gas is emitted from the gap of the portion L where the cover member 32 contacts the partial window portion 30 on the outer peripheral side of the cover member 32. It may leak. That is, the gap cannot be managed in the portion L in contact with the partial window portion 30, and the gas leakage amount cannot be controlled due to the difference between the plasma processing devices 1, which may cause a variation in the gas supply amount.
そこで、図３（ｃ）に示すように、ガスの漏れが生じない構造として、第２実施形態に係るカバー部材３２を金属窓３のガスシャワーヘッドの処理容器１０側の面に取り付けるときの一例を示す。図３（ｃ）の下図は、処理容器１０の天井面の左上１／４の平面を示す。図３（ｃ）の上図の断面は、図３（ｃ）の下図のＣ−Ｃ断面である。 Therefore, as shown in FIG. 3C, as a structure in which gas leakage does not occur, an example when the cover member 32 according to the second embodiment is attached to the surface of the metal window 3 on the processing container 10 side of the gas shower head. Is shown. The lower figure of FIG. 3C shows the plane of the upper left 1/4 of the ceiling surface of the processing container 10. The cross section of the upper view of FIG. 3 (c) is the CC cross section of the lower figure of FIG. 3 (c).
第２実施形態に係るカバー部材３２は、仕切部材３１により仕切られる隣接する部分窓部３０の一方に設けられる第１のカバー部材３２ａと、部分窓部３０の他方に設けられる第２のカバー部材３２ｂとを有する。第１のカバー部材３２ａと第２のカバー部材３２ｂとは、セラミックスの袋状に形成される。 The cover member 32 according to the second embodiment includes a first cover member 32a provided on one of adjacent partial window portions 30 partitioned by the partition member 31, and a second cover member provided on the other side of the partial window portion 30. It has 32b and. The first cover member 32a and the second cover member 32b are formed in the shape of a ceramic bag.
具体的には、カバー部材３２は、プラズマから仕切部材３１を保護するために、仕切部材３１の処理容器１０側の面に取り付けられた板状のセラミックス部材３４、セラミックス部材３４に隣接して配置された第１のカバー部材３２ａ及び第２のカバー部材３２ｂを有する。 Specifically, the cover member 32 is arranged adjacent to the plate-shaped ceramic member 34 and the ceramic member 34 attached to the surface of the partition member 31 on the processing container 10 side in order to protect the partition member 31 from plasma. It has a first cover member 32a and a second cover member 32b.
第１のカバー部材３２ａ及び第２のカバー部材３２ｂは、セラミックス部材３４を挟んで、内部に中空部分を有する構造となっている。第１のカバー部材３２ａ及び第２のカバー部材３２ｂは、仕切部材３１の長手方向に沿って平行して設けられ、互いに分離し、その間に溝部３５が形成されている（図５（ａ）参照）。溝部３５からセラミックス部材３４が露出している。 The first cover member 32a and the second cover member 32b have a structure having a hollow portion inside, sandwiching the ceramic member 34. The first cover member 32a and the second cover member 32b are provided in parallel along the longitudinal direction of the partition member 31 and are separated from each other, and a groove 35 is formed between them (see FIG. 5A). ). The ceramic member 34 is exposed from the groove 35.
第１のカバー部材３２ａ及び第２のカバー部材３２ｂの中空部分は、ガス拡散室４０３となっている。第１のカバー部材３２ａ及び第２のカバー部材３２ｂの部分窓部３０の間の下方の位置には、ガス拡散室４０３に連通する複数のガス孔４０４が形成されている。 The hollow portion of the first cover member 32a and the second cover member 32b is a gas diffusion chamber 403. A plurality of gas holes 404 communicating with the gas diffusion chamber 403 are formed at a lower position between the partial window portions 30 of the first cover member 32a and the second cover member 32b.
また、本実施形態では、部分窓部３０の縁部の近傍に形成されたガス孔３０２ｂに、第１のカバー部材３２ａに形成された管状部材３２ａ１が挿入されている。また、部分窓部３０の縁部の近傍に形成された他のガス孔３０２ｂに、第２のカバー部材３２ｂに形成された管状部材３２ｂ１が挿入されている。管状部材３２ａ１及び管状部材３２ｂ１が挿入された第１のカバー部材３２ａ及び第２のカバー部材３２ｂと、部分窓部３０との間は、Ｏリング３０４によりシールされている。これにより、第１のカバー部材３２ａ及び第２のカバー部材３２ｂと部分窓部３０との隙間からガスが漏れないようになっている。ガス孔３０２ｂは、第１のカバー部材３２ａの管状部材３２ａ１及び第２のカバー部材３２ｂに形成された管状部材３２ｂ１が挿入される構造となるため、部分窓部３０に形成された他のガス孔３０２ａよりも径が大きくなっている。 Further, in the present embodiment, the tubular member 32a1 formed in the first cover member 32a is inserted into the gas hole 302b formed in the vicinity of the edge portion of the partial window portion 30. Further, the tubular member 32b1 formed in the second cover member 32b is inserted into another gas hole 302b formed in the vicinity of the edge portion of the partial window portion 30. An O-ring 304 seals between the first cover member 32a and the second cover member 32b into which the tubular member 32a1 and the tubular member 32b1 are inserted and the partial window portion 30. As a result, gas does not leak from the gap between the first cover member 32a and the second cover member 32b and the partial window portion 30. Since the gas hole 302b has a structure in which the tubular member 32a1 of the first cover member 32a and the tubular member 32b1 formed in the second cover member 32b are inserted, another gas hole formed in the partial window portion 30 is formed. The diameter is larger than that of 302a.
第１のカバー部材３２ａ及び第２のカバー部材３２ｂは、１つまたは複数のガス孔３０２ｂと連通するように処理容器１０側の面に延在する。これにより、第１のカバー部材３２ａ及び第２のカバー部材３２ｂ内のガス拡散室４０３には、１つまたは複数のガス孔３０２ｂから処理ガスが供給される。 The first cover member 32a and the second cover member 32b extend to the surface on the processing container 10 side so as to communicate with one or more gas holes 302b. As a result, the processing gas is supplied from one or more gas holes 302b to the gas diffusion chamber 403 in the first cover member 32a and the second cover member 32b.
かかる構成の第２実施形態に係る第１のカバー部材３２ａ及び第２のカバー部材３２ｂによれば、処理ガスは、ガス供給路Ｒ１を用いて処理容器１０内の部分窓部３０の下方に、複数のガス孔３０２ａからシャワー状に供給される。これに加えて、処理ガスは、ガス供給路Ｒ２を用いて、処理容器１０内の部分窓部３０の間の下方に、複数のガス孔４０４ａからシャワー状に供給される。 According to the first cover member 32a and the second cover member 32b according to the second embodiment of the above configuration, the processing gas is delivered below the partial window portion 30 in the processing container 10 by using the gas supply path R1. It is supplied in a shower shape from a plurality of gas holes 302a. In addition to this, the processing gas is shower-likely supplied from the plurality of gas holes 404a below between the partial windows 30 in the processing container 10 by using the gas supply path R2.
本実施形態に係るガス供給路Ｒ２は、処理ガスを第１のカバー部材３２ａの内部に通す第１ルートと、第２のカバー部材３２ｂの内部に通す第２ルートとを有する。これにより、部分窓部３０に形成された複数のガス孔３０２ａから処理容器１０内に直接処理ガスを供給するガス供給路Ｒ１の他に、第１のルートと第２のルートを有するガス供給路Ｒ２を用いて、金属窓３の全面から処理容器１０内にシャワー状に供給することができる。 The gas supply path R2 according to the present embodiment has a first route for passing the processing gas inside the first cover member 32a and a second route for passing the processing gas inside the second cover member 32b. As a result, in addition to the gas supply path R1 that directly supplies the processing gas into the processing container 10 from the plurality of gas holes 302a formed in the partial window portion 30, the gas supply path having the first route and the second route. Using R2, the entire surface of the metal window 3 can be supplied into the processing container 10 in a shower shape.
なお、ガス孔３０２ａ、３０２ｂは、複数の部分窓部３０のそれぞれに形成された第１のガス孔の一例であり、ガス孔４０４は、第１のカバー部材３２ａ及び第２のカバー部材３２ｂに形成された第２のガス孔の一例である。Ｏリング３０４は、第１のカバー部材３２ａと第２のカバー部材３２ｂとに設けられ、ガス孔３０２ｂに挿入される管状部材３２ａ１、３２ｂ１のそれぞれと部分窓部３０との間を封止する封止部材の一例である。 The gas holes 302a and 302b are examples of the first gas holes formed in each of the plurality of partial window portions 30, and the gas holes 404 are formed in the first cover member 32a and the second cover member 32b. This is an example of the formed second gas hole. The O-ring 304 is provided on the first cover member 32a and the second cover member 32b, and seals between each of the tubular members 32a1 and 32b1 inserted into the gas hole 302b and the partial window portion 30. This is an example of a stop member.
隣接する部分窓部３０は金属により形成されている。このため、プラズマ処理においてプラズマからの入熱や部分窓部３０からの伝熱により、隣接する各部分窓部３０がそれぞれ熱膨張する。更に、排気装置１２により処理容器１０内を真空引きし、所定の真空状態にすると、金属窓３の大気側（アンテナ室５０側）から真空側（処理容器１０側）に大きな圧力がかかり金属窓３が処理容器１０側に変形する。そのため、隣接する部分窓部３０の縁部に跨って取り付けられている第１のカバー部材３２ａ及び第２のカバー部材３２ｂが一体化していると、隣接する部分窓部３０の異なる動きによりカバー部材が割れたり、破損することがある。 The adjacent partial window portion 30 is made of metal. Therefore, in the plasma treatment, the adjacent partial window portions 30 thermally expand due to the heat input from the plasma and the heat transfer from the partial window portion 30. Further, when the inside of the processing container 10 is evacuated by the exhaust device 12 to a predetermined vacuum state, a large pressure is applied from the atmosphere side (antenna chamber 50 side) to the vacuum side (processing container 10 side) of the metal window 3 to the metal window. 3 is deformed to the processing container 10 side. Therefore, when the first cover member 32a and the second cover member 32b that are attached across the edge of the adjacent partial window portion 30 are integrated, the cover member is caused by different movements of the adjacent partial window portion 30. May crack or break.
これに対して、本実施形態では、隣接する部分窓部３０のそれぞれに対して第１のカバー部材３２ａ及び第２のカバー部材３２ｂが分離して設けられているため、隣接する部分窓部３０の異なる動きにそれぞれのカバー部材が追従することができる。これにより、各部分窓部３０の熱膨張や変形により、第１のカバー部材３２ａ及び第２のカバー部材３２ｂが損傷することを防止できる。ただし、１のカバー部材３２ａ及び第２のカバー部材３２ｂは一体的に設けられてもよい。 On the other hand, in the present embodiment, since the first cover member 32a and the second cover member 32b are separately provided for each of the adjacent partial window portions 30, the adjacent partial window portions 30 are provided separately. Each cover member can follow different movements. As a result, it is possible to prevent the first cover member 32a and the second cover member 32b from being damaged due to thermal expansion or deformation of each partial window portion 30. However, the first cover member 32a and the second cover member 32b may be provided integrally.
プラズマ処理において排気装置１２により処理容器１０内を真空引きし、所定の真空状態にすると、金属窓３の大気側（アンテナ室５０側）から真空側（処理容器１０側）に大きな圧力がかかり金属窓３が処理容器１０側に撓む。したがって、金属窓３及びカバー部材を接触させることによりガス拡散室を形成する場合には、金属窓３の撓みやプラズマからの入熱により接触面の隙間の寸法が増大すると、その隙間からガス拡散室のガスが漏れる可能性がある。 In the plasma treatment, when the inside of the processing container 10 is evacuated by the exhaust device 12 to a predetermined vacuum state, a large pressure is applied from the atmosphere side (antenna chamber 50 side) to the vacuum side (processing container 10 side) of the metal window 3 to metal. The window 3 bends toward the processing container 10. Therefore, when the gas diffusion chamber is formed by bringing the metal window 3 and the cover member into contact with each other, if the size of the gap between the contact surfaces increases due to the bending of the metal window 3 or the heat input from the plasma, the gas diffuses from the gap. Room gas may leak.
これに対して、本実施形態に係る金属窓３のガスシャワーヘッドによれば、第１のカバー部材３２ａ及び第２のカバー部材３２ｂ内は中空構造となっているため、処理ガスをガス孔４０４から漏れなくシャワー状に供給できるため、処理ガスの制御性を高めることができる。 On the other hand, according to the gas shower head of the metal window 3 according to the present embodiment, since the inside of the first cover member 32a and the second cover member 32b has a hollow structure, the processing gas is supplied to the gas hole 404. Since it can be supplied in a shower shape without leakage, the controllability of the processing gas can be improved.
図５（ａ）は、図３（ｃ）の第１のカバー部材３２ａ及び第２のカバー部材３２ｂの平面図である。これによれば、処理ガスは、ガス供給路Ｒ１を用いて、部分窓部３０に形成された多数のガス孔３０２ａから直接処理容器１０内の部分窓部３０の下方に導入される。また、処理ガスは、ガス供給路Ｒ２を用いて第２実施形態に係る第１のカバー部材３２ａ及び第２のカバー部材３２ｂに形成された複数のガス孔４０４を通って、処理容器１０内の部分窓部３０の間の下方に導入される。これにより、処理容器１０内のエッチングレート等を改善できる。 5 (a) is a plan view of the first cover member 32a and the second cover member 32b of FIG. 3 (c). According to this, the processing gas is introduced directly below the partial window portion 30 in the processing container 10 from a large number of gas holes 302a formed in the partial window portion 30 by using the gas supply path R1. Further, the processing gas is passed through the plurality of gas holes 404 formed in the first cover member 32a and the second cover member 32b according to the second embodiment by using the gas supply path R2, and is contained in the processing container 10. It is introduced below between the partial windows 30. Thereby, the etching rate and the like in the processing container 10 can be improved.
図５（ｂ）は、第２実施形態の変形例に係るカバー部材３２を示す。これによれば、第２実施形態の変形例に係るカバー部材３２では、ガス孔３０２ｂと、ガス孔３０２ｂに挿入される第１のカバー部材３２ａ及び第２のカバー部材３２ｂの管状部材３２ａ１、３２ｂ１とをスリット状に形成したものである。これによっても、ガス供給路Ｒ２のコンダクタンスを確保しながら、部分窓部３０の間の下方に十分な流量の処理ガスをシャワー状に供給することができる。これにより、処理容器１０内のエッチングレート等を改善できる。 FIG. 5B shows a cover member 32 according to a modified example of the second embodiment. According to this, in the cover member 32 according to the modified example of the second embodiment, the gas hole 302b and the tubular members 32a1 and 32b1 of the first cover member 32a and the second cover member 32b inserted into the gas hole 302b. And are formed in a slit shape. This also makes it possible to supply a sufficient flow rate of processing gas in a shower shape downward between the partial window portions 30 while ensuring the conductance of the gas supply path R2. Thereby, the etching rate and the like in the processing container 10 can be improved.
以上、かかる構成の各実施形態に係るカバー部材をプラズマ処理装置１に使用した場合、これらのカバー部材を使用しない場合に比べて金属窓３の処理ガスをシャワー状に供給可能な面積を、１３％増加することができた。 As described above, when the cover member according to each embodiment of the above configuration is used for the plasma processing apparatus 1, the area where the processing gas of the metal window 3 can be supplied in a shower shape is 13 as compared with the case where these cover members are not used. Was able to increase by%.
以上、プラズマ処理装置及びガスシャワーヘッドを上記実施形態により説明したが、本発明にかかるプラズマ処理装置及びガスシャワーヘッドは上記実施形態に限定されるものではなく、本発明の範囲内で種々の変形及び改良が可能である。上記複数の実施形態に記載された事項は、矛盾しない範囲で組み合わせることができる。 Although the plasma processing apparatus and the gas shower head have been described above by the above-described embodiment, the plasma processing apparatus and the gas shower head according to the present invention are not limited to the above-described embodiment, and various modifications are made within the scope of the present invention. And improvements are possible. The matters described in the plurality of embodiments can be combined within a consistent range.
本明細書では、被処理基板の一例としてＦＰＤ用のガラス基板Ｇを挙げて説明した。しかし、基板は、これに限らず、太陽電池、LCD(Liquid Crystal Display)に用いられる各種基板や、半導体ウェハ、フォトマスク、ＣＤ基板、プリント基板等であっても良い。 In the present specification, the glass substrate G for FPD has been described as an example of the substrate to be processed. However, the substrate is not limited to this, and may be various substrates used for solar cells and LCDs (Liquid Crystal Display), semiconductor wafers, photomasks, CD substrates, printed circuit boards, and the like.
１ プラズマ処理装置
３ 金属窓
５ 高周波アンテナ
１０ 処理容器
１３ 載置台
３０ 部分窓部
３１ 仕切部材
３２ カバー部材
３２ａ 第１のカバー部材
３２ｂ 第２のカバー部材
３２ａ１、３２ｂ１ 管状部材
３４ セラミックス部材
３５ 溝部
５０ アンテナ室
１５２ 第２の高周波電源
３０１ ガス拡散室
３０２、３０２ａ、３０２ｂ ガス孔
３０４ Ｏリング
４０１，４０３ ガス拡散室
４０２、４０４ ガス孔
Ｒ１ 第１のガス供給路
Ｒ２ 第２のガス供給路
1 Plasma processing device 3 Metal window 5 High frequency antenna 10 Processing container 13 Mounting stand 30 Partial window part 31 Partition member 32 Cover member 32a First cover member 32b Second cover member 32a1, 32b1 Tubular member 34 Ceramic member 35 Groove 50 Antenna Room 152 Second high-frequency power supply 301 Gas diffusion chamber 302, 302a, 302b Gas hole 304 O ring 401,403 Gas diffusion chamber 402, 404 Gas hole R1 First gas supply path R2 Second gas supply path
Claims (9)
前記載置台に対向して前記処理容器に形成された、複数の導電性の部分窓部を有する金属窓と、
前記部分窓部の間、及び前記部分窓部と前記処理容器との間に設けられる絶縁物の仕切部材と、
前記金属窓の上方側に設けられ、誘導結合により処理ガスをプラズマ化するアンテナと、
前記仕切部材の前記処理容器の側の面を覆い、隣接する前記部分窓部の縁部を跨ぐ絶縁体のカバー部材と、を有し、
複数の前記部分窓部のそれぞれは、複数の第１のガス孔を有し、
前記カバー部材は、複数の第２のガス孔を有し、該カバー部材の内部にて複数の前記第１のガス孔の少なくともいずれかと複数の前記第２のガス孔とが連通するように前記処理容器の側の面に延在する、
プラズマ処理装置。 It is a plasma processing device that turns the processing gas into plasma and plasma-processes the substrate to be processed placed on the mounting table in the processing container.
A metal window having a plurality of conductive partial windows formed in the processing container facing the above-mentioned stand, and
Insulating partition members provided between the partial windows and between the partial windows and the processing container, and
An antenna provided on the upper side of the metal window and inductively coupled to turn the processing gas into plasma,
It has an insulator cover member that covers the surface of the partition member on the side of the processing container and straddles the edge portion of the adjacent partial window portion.
Each of the plurality of said partial windows has a plurality of first gas holes.
The cover member has a plurality of second gas holes, and the cover member is such that at least one of the plurality of the first gas holes and the plurality of the second gas holes communicate with each other inside the cover member. Extends to the side surface of the processing container,
Plasma processing equipment.
請求項１に記載のプラズマ処理装置。 Inside the cover member, a gas diffusion chamber to which processing gas is supplied from at least one of the plurality of first gas holes is formed.
The plasma processing apparatus according to claim 1.
請求項２に記載のプラズマ処理装置。 The metal window provides the gas diffusion chamber from at least one of the first gas supply path for supplying the processing gas into the processing container from the plurality of first gas holes and the plurality of first gas holes. It has a second gas supply path for supplying the processing gas into the processing container through the plurality of second gas holes.
The plasma processing apparatus according to claim 2.
請求項３に記載のプラズマ処理装置。 The second gas supply path supplies processing gas from a plurality of the second gas holes arranged below between the adjacent partial windows.
The plasma processing apparatus according to claim 3.
請求項２〜４のいずれか一項に記載のプラズマ処理装置。 The gas diffusion chamber is two spaces provided in the cover member along the longitudinal direction of the partition member covered by the cover member.
The plasma processing apparatus according to any one of claims 2 to 4.
請求項２〜４のいずれか一項に記載のプラズマ処理装置。 A plurality of the gas diffusion chambers are provided for each of the first gas holes along the longitudinal direction of the partition member covered by the cover member.
The plasma processing apparatus according to any one of claims 2 to 4.
前記第１のカバー部材と前記第２のカバー部材とは、セラミックスの袋状に形成される、
請求項１〜６のいずれか一項に記載のプラズマ処理装置。 The cover member includes a first cover member provided on one edge of an adjacent partial window portion partitioned by the partition member and a second cover member provided on the other edge portion of the partial window portion. Have and
The first cover member and the second cover member are formed in the shape of a ceramic bag.
The plasma processing apparatus according to any one of claims 1 to 6.
請求項７に記載のプラズマ処理装置。 The first cover member and the second cover member each have a tubular member inserted into at least one of the plurality of first gas holes, and each of the tubular member and the partial window portion A sealing member is provided between the
The plasma processing apparatus according to claim 7.
複数の導電性の部分窓部を有する金属窓と、
前記部分窓部の間、及び前記部分窓部と前記処理容器との間に設けられる絶縁物の仕切部材と、
前記金属窓の上方側に設けられ、誘導結合により処理ガスをプラズマ化するアンテナと、
前記仕切部材の前記処理容器の側の面を覆い、隣接する前記部分窓部の縁部を跨ぐ絶縁体のカバー部材と、を有し、
複数の前記部分窓部のそれぞれは、複数の第１のガス孔を有し、
前記カバー部材は、複数の第２のガス孔を有し、該カバー部材の内部にて複数の前記第１のガス孔の少なくともいずれかと複数の前記第２のガス孔とが連通するように前記処理容器の側の面に延在する、ガスシャワーヘッド。 A gas shower head used in a plasma processing apparatus that turns a processing gas into plasma by inductively coupled and plasma-processes a substrate to be processed placed on a mounting table in a processing container.
Metal windows with multiple conductive partial windows,
Insulating partition members provided between the partial windows and between the partial windows and the processing container, and
An antenna provided on the upper side of the metal window and inductively coupled to turn the processing gas into plasma,
It has an insulator cover member that covers the surface of the partition member on the side of the processing container and straddles the edge portion of the adjacent partial window portion.
Each of the plurality of said partial windows has a plurality of first gas holes.
The cover member has a plurality of second gas holes, and the cover member is such that at least one of the plurality of the first gas holes and the plurality of the second gas holes communicate with each other inside the cover member. A gas shower head that extends to the side surface of the processing container.
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