JP2024008667A - Substrate processing device, substrate processing method, and gas supply assembly - Google Patents
Substrate processing device, substrate processing method, and gas supply assembly Download PDFInfo
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- 238000004380 ashing Methods 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
Abstract
Description
本開示は、基板処理装置、基板処理方法及びガス供給アセンブリに関する。 The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a gas supply assembly.
処理容器の上部に設けられた金属窓を介して、誘導結合アンテナに高周波電力を供給して誘導結合によって処理ガスをプラズマ化し、処理容器内の載置台に載置された基板へプラズマ処理を施す誘導結合型の基板処理装置が知られている。このような基板処理装置では、金属窓に複数のガス孔を設け、複数のガス孔から処理容器内に処理ガスを供給する。 High-frequency power is supplied to an inductively coupled antenna through a metal window installed at the top of the processing container to convert the processing gas into plasma through inductive coupling, and perform plasma processing on the substrate placed on the mounting table inside the processing container. Inductively coupled substrate processing apparatuses are known. In such a substrate processing apparatus, a plurality of gas holes are provided in the metal window, and processing gas is supplied into the processing container from the plurality of gas holes.
基板処理装置においてプラズマ処理が施される基板は世代が進むにつれて大型化し、基板と向き合う金属窓も大型化しているが、このような金属窓を一部材で構成することは困難である。そこで、金属窓を複数の金属窓によって構成することが一般化している。金属窓を複数の分割窓によって構成する場合、各分割窓に誘起される電流が隣接する分割窓に跨がって流れないように、隣接する分割窓の間を絶縁体で仕切る必要がある。 As the generations of substrates that are subjected to plasma processing in substrate processing apparatuses have become larger, the metal windows that face the substrates have also become larger, but it is difficult to construct such metal windows from a single material. Therefore, it has become common to configure a metal window with a plurality of metal windows. When a metal window is composed of a plurality of divided windows, it is necessary to partition adjacent divided windows with an insulator so that the current induced in each divided window does not flow across adjacent divided windows.
そして、プラズマ処理の均一性を向上させるため、各分割窓に複数のガス孔を設けるだけでなく、絶縁体を基板側において覆うカバー部材にガス拡散室と、該ガス拡散室から処理ガスを供給する複数のガス孔とを設ける基板処理装置が提案されている（例えば、特許文献１参照）。 In order to improve the uniformity of plasma processing, in addition to providing multiple gas holes in each divided window, a gas diffusion chamber is provided in the cover member that covers the insulator on the substrate side, and processing gas is supplied from the gas diffusion chamber. A substrate processing apparatus that is provided with a plurality of gas holes has been proposed (for example, see Patent Document 1).
本開示に係る技術は、プラズマ処理の均一性に関する制御性を向上させる。 The technology according to the present disclosure improves controllability regarding uniformity of plasma processing.
本開示に係る技術の一態様は、処理ガスのプラズマによって基板にプラズマ処理を施す基板処理装置であって、内部において、下部に前記基板を載置する載置台が配置され、上部に前記載置台と対向する金属窓が配置され、前記載置台と前記金属窓の間に処理空間が形成される処理容器と、前記金属窓を介して前記載置台と対向し、前記処理空間に前記プラズマを生成するための誘導結合アンテナと、を備え、前記金属窓は、複数の分割窓と、互いに隣接する各前記分割窓の間のそれぞれに配置された絶縁部とを有し、各前記分割窓は、前記処理空間へ前記処理ガスを供給するガス孔を有する第１のガスシャワー構造を有し、各前記絶縁部は、前記処理空間へ前記処理ガスを供給するガス孔を有する第２のガスシャワー構造を有し、前記第１のガスシャワー構造に前記処理ガスを導入するための第１のガス流路と、前記第２のガスシャワー構造に前記処理ガスを導入するための第２のガス流路とが配置され、前記第２のガス流路は、前記第１のガス流路が前記第１のガスシャワー構造に接続される部分よりも上流の部分において、前記第１のガス流路から独立する。 One aspect of the technology according to the present disclosure is a substrate processing apparatus that performs plasma processing on a substrate using plasma of a processing gas, in which a mounting table for mounting the substrate is arranged at a lower part, and the mounting table is arranged at an upper part. a processing container in which a metal window facing the metal window is arranged and a processing space is formed between the mounting table and the metal window; and a processing container facing the mounting table through the metal window and generating the plasma in the processing space and an inductively coupled antenna for the metal window, the metal window having a plurality of divided windows, and an insulating part disposed between each of the adjacent divided windows, each of the divided windows comprising: a first gas shower structure having a gas hole for supplying the processing gas to the processing space, and each of the insulating parts having a second gas shower structure having a gas hole for supplying the processing gas to the processing space; a first gas flow path for introducing the processing gas into the first gas shower structure; and a second gas flow path for introducing the processing gas into the second gas shower structure. and the second gas flow path is independent from the first gas flow path in a portion upstream of a portion where the first gas flow path is connected to the first gas shower structure. do.
本開示に係る技術によれば、プラズマ処理の均一性に関する制御性を向上させることができる。 According to the technology according to the present disclosure, controllability regarding the uniformity of plasma processing can be improved.
上述した特許文献１の技術では、金属窓の分割窓の一部をカバー部材で覆うことにより、分割窓の各ガス孔からカバー部材のガス拡散室へ処理ガスを導入する。したがって、カバー部材の各ガス孔から処理容器内へ供給される処理ガスの流量は、分割窓の各ガス孔から処理容器内へ供給される処理ガスの流量に比例する。そして、エッチングレートは処理ガスの流量に影響されるため、基板において、絶縁部に対向する領域のエッチングレートは、分割窓に対向する領域のエッチングレートと少なくとも緩やかな比例関係を示すことになる。 In the technique of Patent Document 1 mentioned above, by covering a part of the divided window of the metal window with the cover member, the processing gas is introduced from each gas hole of the divided window into the gas diffusion chamber of the cover member. Therefore, the flow rate of processing gas supplied into the processing container from each gas hole of the cover member is proportional to the flow rate of processing gas supplied into the processing container from each gas hole of the divided window. Since the etching rate is affected by the flow rate of the processing gas, the etching rate of the region facing the insulating portion of the substrate exhibits at least a gentle proportional relationship with the etching rate of the region facing the dividing window.
しかしながら、このような特許文献１の技術では、例えば、絶縁部に対向する領域のエッチングレートを下げる一方、分割窓に対向する領域のエッチングレートを上げるというような制御を行うことが難しく、プラズマ処理の均一性に関する制御性がさほど高くない。 However, with the technique of Patent Document 1, it is difficult to perform control such as, for example, lowering the etching rate of the region facing the insulating portion while increasing the etching rate of the region facing the dividing window, and the plasma processing Controllability regarding uniformity is not very high.
これに対応して、本開示に係る技術は、分割窓の各ガス孔から処理容器内へ供給される処理ガスの流量と、カバー部材の各ガス孔から処理容器内へ供給される処理ガスの流量との比例関係を解消し、プラズマ処理の均一性に関する制御性を向上させる。 In response to this, the technology according to the present disclosure is capable of controlling the flow rate of the processing gas supplied into the processing container from each gas hole of the split window, and the flow rate of the processing gas supplied into the processing container from each gas hole of the cover member. Eliminates the proportional relationship with flow rate and improves controllability regarding uniformity of plasma processing.
以下、図面を参照して本開示に係る技術の一実施の形態を説明する。図１は、本実施の形態としての基板処理装置の構成を概略的に示す断面図であり、図２は、図１の基板処理装置が備える金属窓を処理空間側から眺めた場合を示す図である。また、図３は、図１の基板処理装置が備える金属窓の構成を概略的に示す拡大断面図である。 Hereinafter, one embodiment of the technology according to the present disclosure will be described with reference to the drawings. FIG. 1 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus according to the present embodiment, and FIG. 2 is a diagram showing a metal window provided in the substrate processing apparatus of FIG. 1 viewed from the processing space side. It is. Further, FIG. 3 is an enlarged cross-sectional view schematically showing the configuration of a metal window included in the substrate processing apparatus of FIG. 1.
図１の基板処理装置１０は、誘導結合型のプラズマ処理装置である。基板処理装置１０は、処理ガスから生成したプラズマを用いて、矩形の基板、例えば、ＦＰＤ（Flat Panel Display）用のガラス基板Ｇ（以下、「基板Ｇ」という）に各種プラズマ処理を施す。各種プラズマ処理としては、基板Ｇ上にメタル膜、ＩＴＯ膜や酸化膜等を形成する成膜処理、基板Ｇ上に形成されたこれらの膜をエッチングするエッチング処理又はメタル膜や酸化膜を覆うフォトレジスト膜を除去するアッシング処理等が該当する。 The substrate processing apparatus 10 in FIG. 1 is an inductively coupled plasma processing apparatus. The substrate processing apparatus 10 performs various plasma treatments on a rectangular substrate, for example, a glass substrate G for an FPD (Flat Panel Display) (hereinafter referred to as "substrate G") using plasma generated from a processing gas. Various plasma treatments include film formation processing to form a metal film, ITO film, oxide film, etc. on the substrate G, etching processing to etch these films formed on the substrate G, or photolithography to cover the metal film or oxide film. This includes ashing processing to remove a resist film.
基板処理装置１０は、導電性材料、例えば、内壁面に陽極酸化処理が施されたアルミニウム又はアルミニウムを含む合金からなる角筒形状の処理容器１１を備え、処理容器１１は電気的に接地される。処理容器１１の上部は金属窓１２によって気密に塞がれる。処理容器１１の内部において、下部には基板Ｇを載置する載置台１３が配置され、載置台１３は金属窓１２と対向する。また、処理容器１１では、載置台１３と金属窓１２の間に処理空間Ｕが形成される。処理空間Ｕでは、後述するように、処理ガスからプラズマが生成される。 The substrate processing apparatus 10 includes a prismatic cylindrical processing container 11 made of a conductive material, for example, aluminum or an aluminum-containing alloy whose inner wall surface is anodized, and the processing container 11 is electrically grounded. . The upper part of the processing container 11 is hermetically closed by a metal window 12. Inside the processing container 11 , a mounting table 13 on which the substrate G is placed is arranged at the lower part, and the mounting table 13 faces the metal window 12 . Furthermore, in the processing container 11 , a processing space U is formed between the mounting table 13 and the metal window 12 . In the processing space U, plasma is generated from the processing gas, as will be described later.
載置台１３は、導電性材料、例えば、表面に陽極酸化処理が施されたアルミニウム、アルミニウムを含む合金又はステンレスなどで構成される。載置台１３の上面には不図示の静電チャックが設けられ、載置台１３に載置された基板Ｇは、静電チャックによって載置台１３に吸着保持される。なお、載置台１３は絶縁体枠２４を介して処理容器１１の底面に設置される。 The mounting table 13 is made of a conductive material, such as aluminum whose surface is anodized, an alloy containing aluminum, or stainless steel. An electrostatic chuck (not shown) is provided on the upper surface of the mounting table 13, and the substrate G placed on the mounting table 13 is held by suction on the mounting table 13 by the electrostatic chuck. Note that the mounting table 13 is installed on the bottom surface of the processing container 11 with an insulating frame 24 interposed therebetween.
処理容器１１の側壁の上端には金属枠１４が設けられ、金属枠１４の上面には側壁部１５が設置される。側壁部１５は天板１６を支持するとともに電気的に接地され、天板１６は金属窓１２を上方から覆う。なお、処理容器１１の側壁と金属枠１４との間にはＯリング等のシール部材１７が設けられ、処理空間Ｕを気密に保つ。また、処理容器１１の側壁には、基板Ｇを処理空間Ｕへ搬入出するための搬入出口１８及び搬入出口１８を開閉するゲートバルブ１９が設けられる。 A metal frame 14 is provided at the upper end of the side wall of the processing container 11, and a side wall portion 15 is provided on the upper surface of the metal frame 14. The side wall portion 15 supports a top plate 16 and is electrically grounded, and the top plate 16 covers the metal window 12 from above. Note that a sealing member 17 such as an O-ring is provided between the side wall of the processing container 11 and the metal frame 14 to keep the processing space U airtight. Further, a side wall of the processing container 11 is provided with a loading/unloading port 18 for loading/unloading the substrate G into/out the processing space U, and a gate valve 19 for opening/closing the loading/unloading port 18 .
図２に示すように、金属窓１２は矩形状を呈し、複数の分割窓２２に分割される。本実施の形態では、金属窓１２が２４個の分割窓２２に分割されるが、分割窓２２の数は２４個に限られず、金属窓１２の大きさに応じて変更される。各分割窓２２は、例えば、非磁性体且つ導電性の金属、アルミニウム又はアルミニウムを含む合金によって構成される。金属窓１２では、互いに隣接する各分割窓２２の間のそれぞれに絶縁体によって構成される仕切部材２３（絶縁部）が配置される。仕切部材２３は、隣接する各分割窓２２を互いに電気的に絶縁する。 As shown in FIG. 2, the metal window 12 has a rectangular shape and is divided into a plurality of divided windows 22. As shown in FIG. In this embodiment, the metal window 12 is divided into 24 divided windows 22, but the number of divided windows 22 is not limited to 24 and may be changed depending on the size of the metal window 12. Each divided window 22 is made of, for example, a non-magnetic and conductive metal, aluminum, or an alloy containing aluminum. In the metal window 12, partition members 23 (insulating portions) made of an insulator are arranged between the respective divided windows 22 that are adjacent to each other. The partition member 23 electrically insulates the adjacent divided windows 22 from each other.
また、各仕切部材２３の処理空間Ｕに対向する面は、プラズマによる消耗を防ぐために 絶縁体のカバー部材２５（絶縁部）によって覆われる。カバー部材２５は、例えば、細長い平板状のアルミナ等のセラミックス部材によって構成され、後述のガス孔３０を有する第１のカバー部材２５ａと、ガス孔３０を有さない第２のカバー部材２５ｂとから成 る。なお、本実施の形態では、各仕切部材２３の処理空間Ｕに対向する面の一部が第１のカバー部材２５ａによって覆われ、各仕切部材２３の処理空間Ｕに対向する面の他の部分は第２のカバー部材２５ｂによって覆われるが、各第１のカバー部材２５ａが覆う各仕切部材２３の範囲は基板処理装置１０の仕様や実行されるプラズマ処理の内容に応じて変更される。 Further, the surface of each partition member 23 facing the processing space U is covered with an insulating cover member 25 (insulating portion) to prevent wear due to plasma. The cover member 25 is made of, for example, an elongated flat ceramic member such as alumina, and includes a first cover member 25a having gas holes 30, which will be described later, and a second cover member 25b having no gas holes 30. Become. In this embodiment, a part of the surface of each partition member 23 facing the processing space U is covered by the first cover member 25a, and the other part of the surface of each partition member 23 facing the processing space U is covered by the first cover member 25a. are covered by the second cover member 25b, but the range of each partition member 23 covered by each first cover member 25a is changed depending on the specifications of the substrate processing apparatus 10 and the content of the plasma processing to be performed.
図１に戻り、基板処理装置１０において、金属窓１２、側壁部１５及び天板１６にて囲まれた空間はアンテナ室２０を構成する。アンテナ室２０には、金属窓１２を介して載置台１３と対向するように、誘導結合アンテナ２１が配置される。誘導結合アンテナ２１は、例えば、図示しない絶縁体からなるスペーサを介して金属窓１２から離間して配置される。また、誘導結合アンテナ２１は、各分割窓２２に対向する領域に跨がって配置され、且つ金属窓１２の周方向に沿って周回するように、渦巻状に形成される。なお、誘導結合アンテナ２１は、一本又は複数のアンテナ線からなる環状アンテナであってもよい。また、誘導結合アンテナ２１は、同心状に複数設けられてもよい。さらに、誘導結合アンテナ２１は、金属窓１２の周方向に複数のアンテナユニットを配列して全体として環状のアンテナを構成するようにしてもよい。その際、各アンテナユニットは、処理内容に応じて、各分割窓２２を跨いで配置してもよく、跨がずに配置してもよい。 Returning to FIG. 1, in the substrate processing apparatus 10, a space surrounded by the metal window 12, the side wall portion 15, and the top plate 16 constitutes an antenna room 20. An inductively coupled antenna 21 is arranged in the antenna room 20 so as to face the mounting table 13 through the metal window 12 . The inductively coupled antenna 21 is placed apart from the metal window 12 via a spacer made of an insulator (not shown), for example. Further, the inductively coupled antenna 21 is arranged so as to straddle the area facing each of the divided windows 22 and is formed in a spiral shape so as to circulate along the circumferential direction of the metal window 12 . Note that the inductively coupled antenna 21 may be a ring-shaped antenna made of one or more antenna wires. Further, a plurality of inductively coupled antennas 21 may be provided concentrically. Further, the inductively coupled antenna 21 may have a plurality of antenna units arranged in the circumferential direction of the metal window 12 to form an annular antenna as a whole. At this time, each antenna unit may be arranged to straddle each divided window 22, or may be arranged without straddling each divided window 22, depending on the processing content.
図１や図３に示すように、各分割窓２２には、処理空間Ｕに向けて開口する多数のガス孔２６が形成される。なお、図３において、誘導結合アンテナ２１や後述の温調流路３７の図示は省略される。各分割窓２２には、ガス供給路６０を有するガス供給管２８が接続され、ガス供給管２８はガス供給源２９に接続される。なお、ガス供給路６０は第１のガス流路を構成する。また、各分割窓２２の内部にはガス拡散室２７が形成され、ガス供給源２９はガス供給管２８を介してガス拡散室２７へ処理ガスを導入する。導入される処理ガスは、例えば、成膜処理、エッチング処理又はアッシング処理に必要なガスである。ガス拡散室２７へ導入された処理ガスは各ガス孔２６から処理空間Ｕへ供給される。したがって、各分割窓２２は、各ガス孔２６及びガス拡散室２７からなる分割窓ガスシャワー構造（第１のガスシャワー構造）を有することになる。 As shown in FIGS. 1 and 3, each divided window 22 is formed with a large number of gas holes 26 that open toward the processing space U. In addition, in FIG. 3, illustration of the inductively coupled antenna 21 and a temperature control channel 37, which will be described later, is omitted. A gas supply pipe 28 having a gas supply path 60 is connected to each divided window 22 , and the gas supply pipe 28 is connected to a gas supply source 29 . Note that the gas supply path 60 constitutes a first gas flow path. Further, a gas diffusion chamber 27 is formed inside each divided window 22 , and a gas supply source 29 introduces a processing gas into the gas diffusion chamber 27 via a gas supply pipe 28 . The processing gas introduced is, for example, a gas necessary for film formation processing, etching processing, or ashing processing. The processing gas introduced into the gas diffusion chamber 27 is supplied to the processing space U from each gas hole 26. Therefore, each divided window 22 has a divided window gas shower structure (first gas shower structure) consisting of each gas hole 26 and gas diffusion chamber 27.
各第１のカバー部材２５ａにも処理空間Ｕに向けて開口する多数のガス孔３０が形成され、各第１のカバー部材２５ａの内部にはガス拡散室３１が形成される。また、ガス供給源２９には、ガス供給路６１を有するガス供給管３２が、間接的若しくは直接的に接続され、ガス供給源２９はガス供給管３２を介してガス拡散室３１へ処理ガスを導入する。なお、ガス供給路６１は第２のガス流路の一部を構成する。ガス拡散室３１へ導入された処理ガスは各ガス孔３０から処理空間Ｕへ供給される。したがって、各第１のカバー部材２５ａも、各ガス孔３０及びガス拡散室３１からなるカバー部材ガスシャワー構造（第２のガスシャワー構造）を有することになる。 A large number of gas holes 30 opening toward the processing space U are also formed in each first cover member 25a, and a gas diffusion chamber 31 is formed inside each first cover member 25a. Further, a gas supply pipe 32 having a gas supply path 61 is connected indirectly or directly to the gas supply source 29 , and the gas supply source 29 supplies processing gas to the gas diffusion chamber 31 via the gas supply pipe 32 . Introduce. Note that the gas supply path 61 constitutes a part of the second gas flow path. The processing gas introduced into the gas diffusion chamber 31 is supplied to the processing space U from each gas hole 30. Therefore, each first cover member 25a also has a cover member gas shower structure (second gas shower structure) consisting of each gas hole 30 and gas diffusion chamber 31.
したがって、基板処理装置１０では、処理空間Ｕにおいて、各分割窓２２に対向する領域だけでなく各第１のカバー部材２５ａに対向する領域にも処理ガスが供給される。これにより、処理空間Ｕにおいて、各分割窓２２に対向する領域のみに処理ガスが偏在するのを防止することができる。 Therefore, in the substrate processing apparatus 10, in the processing space U, the processing gas is supplied not only to the region facing each divided window 22 but also to the region facing each first cover member 25a. Thereby, in the processing space U, it is possible to prevent the processing gas from being unevenly distributed only in the area facing each divided window 22.
また、基板処理装置１０では、誘導結合アンテナ２１に、整合器３３を介して高周波電源３４が接続される。高周波電源３４は、例えば、１３．５６ＭＨｚのプラズマ生成用の高周波電力を誘導結合アンテナ２１に供給する。これにより、金属窓１２を構成する各分割窓２２のそれぞれにおいて、上面（誘導結合アンテナ２１側）から下面（処理空間Ｕ側）にわたって周回する渦電流が誘起され、この渦電流によって処理空間Ｕに誘導電界が形成される。そして、この誘導電界が処理空間Ｕに供給された処理ガスを励起してプラズマを生成する。 Further, in the substrate processing apparatus 10 , a high frequency power source 34 is connected to the inductively coupled antenna 21 via a matching box 33 . The high frequency power supply 34 supplies, for example, 13.56 MHz high frequency power for plasma generation to the inductively coupled antenna 21. As a result, an eddy current circulating from the upper surface (inductively coupled antenna 21 side) to the lower surface (processing space U side) is induced in each of the divided windows 22 constituting the metal window 12, and this eddy current flows into the processing space U. An induced electric field is formed. This induced electric field excites the processing gas supplied to the processing space U to generate plasma.
さらに、載置台１３に、整合器３５を介して高周波電源３６が接続される。高周波電源３６は、例えば、３．２ＭＨｚのバイアス用の高周波電力を載置台１３に供給する。これにより、処理空間Ｕのプラズマ中のイオンを基板Ｇに引き込むことができる。 Further, a high frequency power source 36 is connected to the mounting table 13 via a matching box 35. The high frequency power supply 36 supplies bias high frequency power of 3.2 MHz to the mounting table 13, for example. Thereby, ions in the plasma in the processing space U can be drawn into the substrate G.
基板処理装置１０では、各分割窓２２が、仕切部材２３によって他の分割窓２２から電気的に絶縁されるため、金属窓１２の各分割窓２２において個別に渦電流が誘起され、各分割窓２２に対向する領域において個別に誘導電界が発生する。したがって、各分割窓２２の大きさや配置を変更することにより、処理空間Ｕにおいて発生する誘導電界の分布を制御することができ、もって、基板Ｇに施すプラズマ処理の度合いを局所的に制御することができる。例えば、基板Ｇにおけるエッチングレートの分布を制御することができ、若しくは、基板Ｇに形成されている酸化膜のエッチングによる残存膜厚分布を制御することができる。 In the substrate processing apparatus 10, each divided window 22 is electrically insulated from other divided windows 22 by the partition member 23, so eddy currents are individually induced in each divided window 22 of the metal window 12, and each divided window 22 is electrically insulated from other divided windows 22 by the partition member 23. An induced electric field is generated individually in the region facing 22. Therefore, by changing the size and arrangement of each divided window 22, it is possible to control the distribution of the induced electric field generated in the processing space U, thereby locally controlling the degree of plasma processing applied to the substrate G. Can be done. For example, the etching rate distribution on the substrate G can be controlled, or the remaining film thickness distribution due to etching of the oxide film formed on the substrate G can be controlled.
また、プラズマ処理の度合いは温度にも左右されるため、基板処理装置１０では、各分割窓２２の内部に、温調流路３７が形成される。温調流路３７には冷却媒体又は加熱媒体が導入され、各分割窓２２が所望の温度に調整され、プラズマ処理の度合いが制御される。なお、同様の機能を発揮させるために、載置台１３の内部に、基板Ｇの温度を制御するためのチラー等の温調機構や伝熱ガス供給機構を設けてもよい。 Further, since the degree of plasma processing also depends on temperature, in the substrate processing apparatus 10, a temperature control channel 37 is formed inside each divided window 22. A cooling medium or a heating medium is introduced into the temperature control channel 37, and each divided window 22 is adjusted to a desired temperature, thereby controlling the degree of plasma processing. Note that in order to exhibit the same function, a temperature control mechanism such as a chiller or a heat transfer gas supply mechanism may be provided inside the mounting table 13 to control the temperature of the substrate G.
さらに、基板処理装置１０では、処理容器１１の底面に排気口３８が形成される。この排気口３８にはターボ分子ポンプやドライポンプ等の排気装置３９が接続される。プラズマ処理を実行する際、排気装置３９は、処理空間Ｕを大気圧よりも低い所定の圧力に維持する。また、基板処理装置１０には制御部４０が設けられる。制御部４０は、少なくともＣＰＵとメモリを有するコンピュータからなり、メモリには所定のプラズマ処理を実行するためのレシピ（プログラム）が記録される。 Further, in the substrate processing apparatus 10, an exhaust port 38 is formed at the bottom of the processing container 11. An exhaust device 39 such as a turbo molecular pump or a dry pump is connected to this exhaust port 38 . When performing plasma processing, the exhaust device 39 maintains the processing space U at a predetermined pressure lower than atmospheric pressure. Further, the substrate processing apparatus 10 is provided with a control section 40 . The control unit 40 includes a computer having at least a CPU and a memory, and a recipe (program) for executing a predetermined plasma treatment is recorded in the memory.
図４は、図３の金属窓１２が有する仕切部材２３の近傍の詳細構成を示す拡大断面図である。図４に示すように、仕切部材２３は、処理空間Ｕ側に配置される下部仕切部材４１と、誘導結合アンテナ２１側に配置される上部仕切部材４２（第２の絶縁部）とを有する。下部仕切部材４１はアルミナ等のセラミックス部材によって構成され、上部仕切部材４２はＰＴＦＥ（Polytetrafluoroethylene）等のフッ素樹脂部材によって構成される。また、分割窓２２と上部仕切部材４２の間には、シール部材４３が配置される。これにより、処理空間Ｕが大気圧のアンテナ室２０等の外部から密封される。仕切部材２３の一部をなす上部仕切部材４２をセラミックス部材ではなく、フッ素樹脂部材によって構成することにより、仕切部材２３全体を軽量化するだけでなく、金属からなる分割窓２２の熱膨張に追従させることができる。その結果、シール部材４３の捻れ等の変形を抑制することができ、処理空間Ｕの密封を良好に維持することができる。 FIG. 4 is an enlarged sectional view showing the detailed configuration of the vicinity of the partition member 23 included in the metal window 12 of FIG. 3. As shown in FIG. As shown in FIG. 4, the partition member 23 includes a lower partition member 41 arranged on the processing space U side and an upper partition member 42 (second insulating part) arranged on the inductively coupled antenna 21 side. The lower partition member 41 is made of a ceramic member such as alumina, and the upper partition member 42 is made of a fluororesin member such as PTFE (Polytetrafluoroethylene). Further, a seal member 43 is arranged between the divided window 22 and the upper partition member 42. Thereby, the processing space U is sealed from the outside, such as the antenna room 20, which is at atmospheric pressure. By constructing the upper partition member 42, which forms part of the partition member 23, from a fluororesin material instead of a ceramic member, not only is the weight of the entire partition member 23 reduced, but it also follows the thermal expansion of the divided window 22 made of metal. can be done. As a result, deformation such as twisting of the seal member 43 can be suppressed, and the sealing of the processing space U can be maintained well.
第１のカバー部材２５ａと下部仕切部材４１の間には、ガス拡散室形成部材４４が配置される。ガス拡散室形成部材４４はアルミナ等のセラミックス部材によって構成され、内部に空間を有し、第１のカバー部材２５ａと合わさることにより、ガス拡散室３１を形成する。また、ガス拡散室形成部材４４は上部が凸形状に成形され、該上部は下部仕切部材４１の下部に形成された凹部へ挿嵌されて、下部仕切部材４１に対するガス拡散室形成部材４４の位置決めがなされる。なお、下部仕切部材４１、ガス拡散室形成部材４４及び第１のカバー部材２５ａは、第１の絶縁部を構成する。 A gas diffusion chamber forming member 44 is arranged between the first cover member 25a and the lower partition member 41. The gas diffusion chamber forming member 44 is made of a ceramic member such as alumina, has a space inside, and forms the gas diffusion chamber 31 when combined with the first cover member 25a. Further, the upper part of the gas diffusion chamber forming member 44 is formed into a convex shape, and the upper part is inserted into a recess formed in the lower part of the lower partition member 41 to determine the position of the gas diffusion chamber forming member 44 with respect to the lower partition member 41. will be done. Note that the lower partition member 41, the gas diffusion chamber forming member 44, and the first cover member 25a constitute a first insulating section.
下部仕切部材４１は、内部に形成された絶縁部ガス流路４５を有する。なお、絶縁部ガス流路４５は、第２のガス流路の一部を構成する。絶縁部ガス流路４５は下部仕切部材４１の側面に開口し、内部においてガス拡散室３１へ向けて下方へ屈曲する。なお、絶縁部ガス流路４５は下部仕切部材４１のみに形成され、上部仕切部材４２と接触しない。すなわち、上部仕切部材４２は絶縁部ガス流路４５内に露出しない。これにより、フッ素樹脂部材によって構成される上部仕切部材４２が絶縁部ガス流路４５を流れる処理ガスによって劣化するのを防止することができる。 The lower partition member 41 has an insulating gas flow path 45 formed therein. Note that the insulating gas flow path 45 constitutes a part of the second gas flow path. The insulating gas flow path 45 opens on the side surface of the lower partition member 41 and bends downward toward the gas diffusion chamber 31 inside. Note that the insulating gas flow path 45 is formed only in the lower partition member 41 and does not come into contact with the upper partition member 42. That is, the upper partition member 42 is not exposed within the insulating gas flow path 45. Thereby, the upper partition member 42 made of a fluororesin member can be prevented from being deteriorated by the processing gas flowing through the insulating gas flow path 45.
分割窓２２において、ガス供給管３２と下部仕切部材４１の間には連結部材４６，４７が配置される。連結部材４６，４７はいずれも内部にガス流路４８，４９を有し、ガス流路４８，４９を介してガス供給路６１と絶縁部ガス流路４５を連通させる。なお、ガス流路４８，４９は第２のガス流路の一部を構成する。したがって、ガス供給源２９から供給された処理ガスは、ガス供給路６１、ガス流路４８，４９及び絶縁部ガス流路４５を経由してガス拡散室３１へ導入される。ここで、ガス供給路６１、ガス流路４８、ガス流路４９及び絶縁部ガス流路４５は第２のガス流路を構成する。なお、連結部材４６，４７はいずれもステンレス部材によって構成される。これにより、連結部材４６，４７がガス流路４８，４９を流れる処理ガスによって腐食するのを防止することができる。また、連結部材４６，４７は分割窓２２に機械加工によって設けられた挿入孔へ挿嵌される。ここでは、機械加工の容易さを考慮して、連結部材４６が挿嵌される挿入孔は基板処理装置１０の上下方向に沿い、連結部材４７が挿嵌される挿入孔は基板処理装置１０の左右方向に沿うように設けられる。なお、図４においては、分割窓２２を上下に貫通する挿入孔に下から連結部材４６を挿入し、さらに、挿入孔蓋５５によって挿入孔を塞ぐ構成を描いているが、挿入孔蓋５５を設けずに、下側が閉塞した挿入孔に上側から連結部材４６を挿入するようにしてもよい。 In the divided window 22, connecting members 46 and 47 are arranged between the gas supply pipe 32 and the lower partition member 41. Each of the connecting members 46 and 47 has gas passages 48 and 49 therein, and the gas supply passage 61 and the insulating part gas passage 45 are communicated through the gas passages 48 and 49. Note that the gas flow paths 48 and 49 constitute a part of the second gas flow path. Therefore, the processing gas supplied from the gas supply source 29 is introduced into the gas diffusion chamber 31 via the gas supply path 61, the gas flow paths 48 and 49, and the insulator gas flow path 45. Here, the gas supply path 61, the gas flow path 48, the gas flow path 49, and the insulating part gas flow path 45 constitute a second gas flow path. Note that both the connecting members 46 and 47 are made of stainless steel members. Thereby, the connecting members 46 and 47 can be prevented from being corroded by the processing gas flowing through the gas channels 48 and 49. Further, the connecting members 46 and 47 are inserted into insertion holes provided in the divided window 22 by machining. Here, in consideration of ease of machining, the insertion hole into which the connecting member 46 is inserted is along the vertical direction of the substrate processing apparatus 10, and the insertion hole into which the connecting member 47 is inserted is along the vertical direction of the substrate processing apparatus 10. It is provided along the left and right direction. Note that although FIG. 4 depicts a configuration in which the connecting member 46 is inserted from below into the insertion hole that vertically passes through the divided window 22 and the insertion hole is further closed with the insertion hole cover 55, the insertion hole cover 55 is Alternatively, the connecting member 46 may be inserted from above into an insertion hole whose lower side is closed.
第１の絶縁部では、上述したように、下部仕切部材４１、ガス拡散室形成部材４４及び第１のカバー部材２５ａのいずれもがセラミックス部材によって構成される。これにより、プラズマ耐性を確保することができ、万が一、処理空間Ｕからプラズマがガス拡散室３１や絶縁部ガス流路４５へ侵入しても、下部仕切部材４１、ガス拡散室形成部材４４及び第１のカバー部材２５ａがプラズマによって消耗するのを防止することができる。 In the first insulating section, as described above, the lower partition member 41, the gas diffusion chamber forming member 44, and the first cover member 25a are all made of ceramic members. Thereby, plasma resistance can be ensured, and even if plasma enters the gas diffusion chamber 31 or the insulating gas flow path 45 from the processing space U, the lower partition member 41, the gas diffusion chamber forming member 44, and the It is possible to prevent the first cover member 25a from being consumed by plasma.
また、第１の絶縁部において、絶縁部ガス流路４５のガス拡散室３１と接続される末端部には、流量調整ブロック５０（流量調整部）が配置される。流量調整ブロック５０には、絶縁部ガス流路４５とガス拡散室３１を連通させる絞り孔５１が形成される。流量調整ブロック５０は、下部仕切部材４１の下部において絶縁部ガス流路４５の末端に形成された凹部に嵌め込み可能に構成される。絞り孔５１の断面積（絞り孔５１の軸方向に直交する断面の断面積。以下同様。）は、ガス供給路６１の断面積、ガス流路４８，４９の断面積や絶縁部ガス流路４５の断面積のいずれよりも小さい。したがって、流量調整ブロック５０はオリフィスとして機能し、ガス拡散室３１へ導入される処理ガスの流量は流量調整ブロック５０の絞り孔５１の断面積に左右される。 Further, in the first insulating section, a flow rate adjustment block 50 (flow rate adjustment section) is disposed at the end portion of the insulating section gas flow path 45 that is connected to the gas diffusion chamber 31. A throttle hole 51 is formed in the flow rate adjustment block 50 so that the insulating gas flow path 45 and the gas diffusion chamber 31 communicate with each other. The flow rate adjustment block 50 is configured to be able to be fitted into a recess formed at the end of the insulating gas flow path 45 in the lower part of the lower partition member 41 . The cross-sectional area of the throttle hole 51 (the cross-sectional area of the cross section perpendicular to the axial direction of the throttle hole 51; the same applies hereinafter) is the cross-sectional area of the gas supply path 61, the cross-sectional area of the gas flow paths 48 and 49, and the insulating gas flow path. It is smaller than any of the 45 cross-sectional areas. Therefore, the flow rate adjustment block 50 functions as an orifice, and the flow rate of the processing gas introduced into the gas diffusion chamber 31 depends on the cross-sectional area of the throttle hole 51 of the flow rate adjustment block 50.
本実施の形態では、絞り孔５１の断面積が異なる何種類かの流量調整ブロック５０が準備され、絶縁部ガス流路４５の末端の凹部に嵌め込まれる流量調整ブロック５０を入れ換えることにより、ガス拡散室３１へ導入される処理ガスの流量を変更することができる。また、流量調整ブロック５０が絶縁部ガス流路４５の末端の凹部に嵌め込まれるとき、流量調整ブロック５０はガス拡散室３１の中央に位置し、絞り孔５１はガス拡散室３１の中央にて開口する。これにより、第２のガス流路は、ガス拡散室３１の中央にてガス拡散室３１に接続される。また、流量調整ブロック５０は、ガス拡散室形成部材４４及び第１のカバー部材２５ａを取り外せば、下方から容易に交換することができる。このため、流量を制御するために流量制御機器（例えば、マスフローコントローラなど）を用いた構成よりも極めて簡単な構造によって、ガス拡散室３１へ導入される処理ガスの流量を容易に調整することができる。なお、本実施の形態において、「ガス拡散室３１の中央」にはガス拡散室３１の中央近傍を含んでもよい。以下同様とする。 In this embodiment, several types of flow rate adjustment blocks 50 with different cross-sectional areas of the throttle holes 51 are prepared, and by replacing the flow rate adjustment blocks 50 fitted into the recesses at the end of the insulating gas flow path 45, gas diffusion is achieved. The flow rate of processing gas introduced into chamber 31 can be changed. Further, when the flow rate adjustment block 50 is fitted into the recess at the end of the insulating gas flow path 45, the flow rate adjustment block 50 is located at the center of the gas diffusion chamber 31, and the throttle hole 51 is opened at the center of the gas diffusion chamber 31. do. Thereby, the second gas flow path is connected to the gas diffusion chamber 31 at the center of the gas diffusion chamber 31. Further, the flow rate adjustment block 50 can be easily replaced from below by removing the gas diffusion chamber forming member 44 and the first cover member 25a. Therefore, the flow rate of the processing gas introduced into the gas diffusion chamber 31 can be easily adjusted with a much simpler structure than a configuration using a flow rate control device (for example, a mass flow controller, etc.) to control the flow rate. can. Note that in this embodiment, "the center of the gas diffusion chamber 31" may include the vicinity of the center of the gas diffusion chamber 31. The same shall apply hereinafter.
以上説明したように、基板処理装置１０では、金属窓１２の各分割窓２２が分割窓ガスシャワー構造を有し、金属窓１２の各仕切部材２３はカバー部材ガスシャワー構造を有し、各分割窓２２、各仕切部材２３がガス供給管２８，３２と協働して処理空間Ｕへ処理ガスを供給する。したがって、各分割窓２２及び各仕切部材２３は、ガス供給アセンブリを構成する。なお、図４中の白抜きの丸はシール部材の断面を示し、各シール部材は、仕切部材２３の近傍の各構成部材の微小隙間を封止する。 As explained above, in the substrate processing apparatus 10, each divided window 22 of the metal window 12 has a divided window gas shower structure, each partition member 23 of the metal window 12 has a cover member gas shower structure, and each divided window 22 has a divided window gas shower structure. The window 22 and each partition member 23 cooperate with the gas supply pipes 28 and 32 to supply processing gas to the processing space U. Each dividing window 22 and each partition member 23 thus constitute a gas supply assembly. Note that the white circles in FIG. 4 indicate the cross sections of the sealing members, and each sealing member seals a minute gap between each component in the vicinity of the partition member 23.
図１に戻り、ガス供給管３２は、ガス供給源２９と分割窓２２の間でガス供給管２８から分岐する。したがって、ガス供給管３２は、ガス供給管２８が各ガス孔２６及びガス拡散室２７からなるガスシャワー構造を有する分割窓２２に接続される部分よりも上流側（ガス供給源２９側）の部分において、ガス供給管２８から独立する。そして、上述したように、ガス供給管３２と連通するガス拡散室３１へ導入される処理ガスの流量は、ガス供給管３２がガス供給管２８から独立する部分よりも下流の第２のガス流路に配置された流量調整ブロック５０を入れ換えることによって変更することができる。すなわち、ガス供給管２８を経由してガス拡散室２７へ導入される処理ガスの流量と、ガス供給管３２を経由してガス拡散室３１へ導入される処理ガスの流量の分配比率を、流量調整ブロック５０を入れ換えることによって変更することができる。これにより、分割窓２２の各ガス孔２６から処理空間Ｕへ供給される処理ガスの流量と、第１のカバー部材２５ａの各ガス孔３０から処理空間Ｕへ供給される処理ガスの流量との比例関係を解消することができる。 Returning to FIG. 1, the gas supply pipe 32 branches from the gas supply pipe 28 between the gas supply source 29 and the dividing window 22. Therefore, the gas supply pipe 32 is located at a portion upstream (on the gas supply source 29 side) of the portion where the gas supply pipe 28 is connected to the divided window 22 having a gas shower structure consisting of each gas hole 26 and the gas diffusion chamber 27. , it is independent from the gas supply pipe 28. As described above, the flow rate of the processing gas introduced into the gas diffusion chamber 31 that communicates with the gas supply pipe 32 is determined by the second gas flow downstream of the part where the gas supply pipe 32 is independent from the gas supply pipe 28. This can be changed by replacing the flow rate adjustment block 50 placed in the path. That is, the distribution ratio of the flow rate of the processing gas introduced into the gas diffusion chamber 27 via the gas supply pipe 28 and the flow rate of the processing gas introduced into the gas diffusion chamber 31 via the gas supply pipe 32 is defined as the flow rate. It can be changed by replacing the adjustment block 50. Thereby, the flow rate of the processing gas supplied to the processing space U from each gas hole 26 of the divided window 22 and the flow rate of the processing gas supplied to the processing space U from each gas hole 30 of the first cover member 25a are adjusted. Proportional relationships can be resolved.
例えば、絞り孔５１の断面積の小さい流量調整ブロック５０を絶縁部ガス流路４５の末端の凹部へ嵌め込むことにより、ガス拡散室３１へ導入される処理ガスの流量を減らすとともに、ガス拡散室２７へ導入される処理ガスの流量を増やすことができる。これにより、処理空間Ｕにおいて、各分割窓２２に対向する領域における処理ガスの濃度を、各第１のカバー部材２５ａに対向する領域における処理ガスの濃度よりも高めることができる。その結果、基板Ｇにおいて、各第１のカバー部材２５ａに対向する領域のエッチングレートや成膜量を減少させる一方、各分割窓２２に対向する領域のエッチングレートや成膜量を増加させることができる。 For example, by fitting the flow rate adjustment block 50 with a small cross-sectional area of the throttle hole 51 into the recess at the end of the insulating gas flow path 45, the flow rate of the processing gas introduced into the gas diffusion chamber 31 can be reduced, and the flow rate of the processing gas introduced into the gas diffusion chamber 31 can be reduced. The flow rate of the processing gas introduced into 27 can be increased. Thereby, in the processing space U, the concentration of the processing gas in the region facing each divided window 22 can be made higher than the concentration of the processing gas in the region facing each first cover member 25a. As a result, in the substrate G, it is possible to reduce the etching rate and the amount of film formation in the region facing each first cover member 25a, while increasing the etching rate and the amount of film formation in the region facing each dividing window 22. can.
また、絞り孔５１の断面積の大きい流量調整ブロック５０を絶縁部ガス流路４５の末端 の凹部へ嵌め込むことにより、ガス拡散室３１へ導入される処理ガスの流量を増やすとともに、ガス拡散室２７へ導入される処理ガスの流量を減らすことができる。これにより、処理空間Ｕにおいて、各分割窓２２に対向する領域における処理ガスの濃度を、各第１のカバー部材２５ａに対向する領域における処理ガスの濃度よりも低下させることができる。その結果、基板Ｇにおいて、各第１のカバー部材２５ａに対向する領域のエッチングレートや成膜量を増加させる一方、各分割窓２２に対向する領域のエッチングレートや成膜量を減少させることができる。 Furthermore, by fitting the flow rate adjustment block 50 with a large cross-sectional area of the throttle hole 51 into the recess at the end of the insulating gas flow path 45, the flow rate of the processing gas introduced into the gas diffusion chamber 31 can be increased, and the flow rate of the processing gas introduced into the gas diffusion chamber 31 can be increased. The flow rate of processing gas introduced into 27 can be reduced. Thereby, in the processing space U, the concentration of the processing gas in the region facing each divided window 22 can be made lower than the concentration of the processing gas in the region facing each first cover member 25a. As a result, on the substrate G, it is possible to increase the etching rate and the amount of film formation in the region facing each first cover member 25a, while decreasing the etching rate and the amount of film formation in the region facing each dividing window 22. can.
すなわち、本実施の形態に係る基板処理装置１０では、基板Ｇに施すプラズマ処理の均一性に関する制御性を向上させることができる。 That is, in the substrate processing apparatus 10 according to the present embodiment, controllability regarding the uniformity of plasma processing performed on the substrate G can be improved.
また、基板処理装置１０では、上述したように、流量調整ブロック５０の絞り孔５１はガス拡散室３１の中央にて開口する。これにより、ガス拡散室３１において処理ガスがほぼ均等に拡散するため、処理ガスが各ガス孔３０から処理空間Ｕへ均等に供給される。その結果、各第１のカバー部材２５ａに対向する領域におけるプラズマ処理の度合いに偏りが生じるのを抑制することができる。 Further, in the substrate processing apparatus 10, as described above, the throttle hole 51 of the flow rate adjustment block 50 opens at the center of the gas diffusion chamber 31. As a result, the processing gas is almost uniformly diffused in the gas diffusion chamber 31, so that the processing gas is evenly supplied from each gas hole 30 to the processing space U. As a result, it is possible to suppress unevenness in the degree of plasma processing in the region facing each first cover member 25a.
以上、本開示の好ましい実施の形態について説明したが、本開示は上述した実施の形態に限定されず、その要旨の範囲内で種々の変形及び変更が可能である。 Although preferred embodiments of the present disclosure have been described above, the present disclosure is not limited to the embodiments described above, and various modifications and changes can be made within the scope of the gist.
例えば、仕切部材２３は、下部仕切部材４１と上部仕切部材４２の２つの部材で構成されるが、１つの部材で構成されてもよい。 For example, the partition member 23 is composed of two members, the lower partition member 41 and the upper partition member 42, but may be composed of one member.
また、流量調整ブロック５０は、仕切部材２３の下部仕切部材４１に形成された絶縁部ガス流路４５の末端に配置されるが、ガス供給管３２からガス拡散室３１までの第２の ガス流路に配置されればよく、例えば、図５に示すように、ガス供給管３２のガス供給路６１に配置されてもよい。但し、この場合、流量調整ブロック５０の交換のための作業性を確保しておく必要がある。 Further, the flow rate adjustment block 50 is arranged at the end of the insulating gas flow path 45 formed in the lower partition member 41 of the partition member 23, and the flow rate adjustment block 50 controls the second gas flow from the gas supply pipe 32 to the gas diffusion chamber 31. For example, as shown in FIG. 5, it may be placed in the gas supply path 61 of the gas supply pipe 32. However, in this case, it is necessary to ensure workability for replacing the flow rate adjustment block 50.
さらに、ガス供給管３２からガス拡散室３１までのガス流路は一部が仕切部材２３（下部仕切部材４１）を経由するが、図６に示すように、分割窓２２にガス供給管３２からガス拡散室３１に到るガス流路５２が形成されてもよい。この場合、流量調整ブロック５０は絞り孔５１がガス流路５２の上流部と連通するように、分割窓２２の下部に形成されたガス流路５２の末端の凹部に嵌め込まれるが、分割窓２２の下部においてガス流路５２の末端の凹部は、嵌め込まれた流量調整ブロック５０がガス拡散室３１の中央に位置するように形成される。この場合、仕切部材２３にはガス流路が形成されない。 Further, a part of the gas flow path from the gas supply pipe 32 to the gas diffusion chamber 31 passes through the partition member 23 (lower partition member 41), but as shown in FIG. A gas flow path 52 leading to the gas diffusion chamber 31 may be formed. In this case, the flow rate adjustment block 50 is fitted into a recess at the end of the gas flow path 52 formed at the lower part of the divided window 22 so that the throttle hole 51 communicates with the upstream portion of the gas flow path 52. A recess at the end of the gas flow path 52 is formed in the lower part of the gas flow path 52 so that the fitted flow rate adjustment block 50 is located at the center of the gas diffusion chamber 31 . In this case, no gas flow path is formed in the partition member 23.
また、ガス供給管３２は、ガス供給源２９と分割窓２２の間でガス供給管２８から分岐するが、ガス供給管３２をガス供給管２８から分岐させず、直接、ガス供給源２９と接続させてもよい。この場合、ガス供給源２９がガス供給管２８とガス供給管３２のそれぞれを流れる処理ガスの流量を調整可能であれば、流量調整ブロック５０を配置する必要を無くすことができる。さらに、ガス供給管３２がガス供給源２９と接続される場合、ガス供給管２８がガス供給源２９と分割窓２２の間でガス供給管３２から分岐してもよい。この場合も、流量調整ブロック５０は、ガス供給管２８とガス供給管３２の分岐位置よりも下流の第２のガス流路に配置される。 Further, the gas supply pipe 32 branches from the gas supply pipe 28 between the gas supply source 29 and the split window 22, but the gas supply pipe 32 is not branched from the gas supply pipe 28 and is directly connected to the gas supply source 29. You may let them. In this case, if the gas supply source 29 can adjust the flow rate of the processing gas flowing through each of the gas supply pipe 28 and the gas supply pipe 32, it is possible to eliminate the need to arrange the flow rate adjustment block 50. Furthermore, when the gas supply pipe 32 is connected to the gas supply source 29 , the gas supply pipe 28 may be branched from the gas supply pipe 32 between the gas supply source 29 and the dividing window 22 . Also in this case, the flow rate adjustment block 50 is arranged in the second gas flow path downstream of the branch position of the gas supply pipe 28 and the gas supply pipe 32.
さらに、基板処理装置１０では、ガス供給管３２と下部仕切部材４１の間には２つの連結部材である連結部材４６，４７が配置される。しかしながら、例えば、図７に示すように、分割窓２２にガス供給管３２から下部仕切部材４１へ到る斜めの挿入孔を設け、該挿入孔に１つの連結部材５３を挿嵌してもよい。この連結部材５３は、ガス供給管３２と絶縁部ガス流路４５を連通させるガス流路５４を有する。これにより、連結部材の数を減らすことができる。 Further, in the substrate processing apparatus 10, two connecting members 46 and 47 are arranged between the gas supply pipe 32 and the lower partition member 41. However, for example, as shown in FIG. 7, an oblique insertion hole extending from the gas supply pipe 32 to the lower partition member 41 may be provided in the divided window 22, and one connecting member 53 may be inserted into the insertion hole. . The connecting member 53 has a gas flow path 54 that communicates the gas supply pipe 32 with the insulation gas flow path 45 . This allows the number of connecting members to be reduced.
また、基板処理装置１０でプラズマ処理が施される基板Ｇは、液晶ディスプレイ、エレクトロルミネセンス（Electro Luminescence）ディスプレイやプラズマディスプレイパネル等である。しかしながら、基板処理装置１０においてプラズマ処理が施される基板は、ＦＰＤ用のガラス基板に限られない。例えば、当該基板は、太陽電池パネル用の基板や半導体デバイス用のシリコンウエハであってもよい。 Further, the substrate G subjected to plasma processing in the substrate processing apparatus 10 is a liquid crystal display, an electroluminescence display, a plasma display panel, or the like. However, the substrate to which plasma processing is performed in the substrate processing apparatus 10 is not limited to a glass substrate for FPD. For example, the substrate may be a substrate for a solar cell panel or a silicon wafer for a semiconductor device.
Ｇ 基板
Ｕ 処理空間
１０ 基板処理装置
１１ 処理容器
１２ 金属窓
１３ 載置台
２１ 誘導結合アンテナ
２２ 分割窓
２３ 仕切部材
２５ カバー部材
２６，３０ ガス孔
２８，３２ ガス供給管
４５ 絶縁部ガス流路
４８，４９ ガス流路
６０，６１ ガス供給路
G Substrate U Processing space 10 Substrate processing apparatus 11 Processing container 12 Metal window 13 Mounting table 21 Inductively coupled antenna 22 Divided window 23 Partition member 25 Cover members 26, 30 Gas holes 28, 32 Gas supply pipe 45 Insulation gas flow path 48, 49 Gas flow path 60, 61 Gas supply path
Claims (9)
内部において、下部に前記基板を載置する載置台が配置され、上部に前記載置台と対向する金属窓が配置され、前記載置台と前記金属窓の間に処理空間が形成される処理容器と、
前記金属窓を介して前記載置台と対向し、前記処理空間に前記プラズマを生成するための誘導結合アンテナと、を備え、
前記金属窓は、複数の分割窓と、互いに隣接する各前記分割窓の間のそれぞれに配置された絶縁部とを有し、
各前記分割窓は、前記処理空間へ前記処理ガスを供給するガス孔を有する第１のガスシャワー構造を有し、
各前記絶縁部は、前記処理空間へ前記処理ガスを供給するガス孔を有する第２のガスシャワー構造を有し、
前記第１のガスシャワー構造に前記処理ガスを導入するための第１のガス流路と、前記第２のガスシャワー構造に前記処理ガスを導入するための第２のガス流路とが配置され、
前記第２のガス流路は、前記第１のガス流路が前記第１のガスシャワー構造に接続される部分よりも上流の部分において、前記第１のガス流路から独立する、基板処理装置。 A substrate processing apparatus that performs plasma processing on a substrate using plasma of a processing gas,
A processing container in which a mounting table for mounting the substrate is arranged at a lower part, a metal window facing the mounting table is arranged at an upper part, and a processing space is formed between the mounting table and the metal window. ,
an inductively coupled antenna that faces the mounting table through the metal window and that generates the plasma in the processing space;
The metal window has a plurality of divided windows and an insulating portion disposed between each of the adjacent divided windows,
Each of the divided windows has a first gas shower structure having a gas hole that supplies the processing gas to the processing space,
Each of the insulating parts has a second gas shower structure having a gas hole for supplying the processing gas to the processing space,
A first gas flow path for introducing the processing gas into the first gas shower structure and a second gas flow path for introducing the processing gas into the second gas shower structure are arranged. ,
The second gas flow path is independent from the first gas flow path in a portion upstream of a portion where the first gas flow path is connected to the first gas shower structure, the substrate processing apparatus .
前記第１の絶縁部は前記第２のガスシャワー構造を有し、
前記第２のガス流路の少なくとも一部は、前記第１の絶縁部に形成される、請求項１に記載の基板処理装置。 The insulating section includes a first insulating section disposed on the processing space side and a second insulating section disposed on the inductively coupled antenna side,
the first insulating section has the second gas shower structure,
The substrate processing apparatus according to claim 1, wherein at least a portion of the second gas flow path is formed in the first insulating section.
前記第２のガス流路は前記ガス拡散室の中央にて前記ガス拡散室に接続される、請求項４に記載の基板処理装置。 The first insulating part has a gas diffusion chamber communicating with each of the gas holes of the second gas shower structure,
5. The substrate processing apparatus according to claim 4, wherein the second gas flow path is connected to the gas diffusion chamber at the center of the gas diffusion chamber.
前記基板処理装置は、内部において、下部に前記基板を載置する載置台が配置され、上部に前記載置台と対向する金属窓が配置され、前記載置台と前記金属窓の間に処理空間が形成される処理容器と、前記金属窓を介して前記載置台と対向し、前記処理空間に前記プラズマを生成するための誘導結合アンテナと、を備え、
前記金属窓は、複数の分割窓と、互いに隣接する各前記分割窓の間のそれぞれに配置された絶縁部とを有し、
各前記分割窓は、前記処理空間へ前記処理ガスを供給するガス孔を有する第１のガスシャワー構造を有し、
各前記絶縁部は、前記処理空間へ前記処理ガスを供給するガス孔を有する第２のガスシャワー構造を有し、
前記第１のガスシャワー構造に前記処理ガスを導入するための第１のガス流路と、前記第２のガスシャワー構造に前記処理ガスを導入するための第２のガス流路とが配置され、
前記第２のガス流路は、前記第１のガス流路が前記第１のガスシャワー構造に接続される部分よりも上流の部分において、前記第１のガス流路と独立し、
前記処理容器に前記基板を搬入し、前記載置台に載置する工程と、
前記処理空間へ、前記第１のガスシャワー構造と前記第２のガスシャワー構造のそれぞれから前記処理ガスを供給する工程と、
前記誘導結合アンテナによって前記処理ガスから前記プラズマを生成する工程と、
前記プラズマによって前記基板にプラズマ処理を施す工程と、を有する基板処理方法。 A substrate processing method in which a substrate is subjected to plasma processing using plasma of a processing gas in a substrate processing apparatus, the method comprising:
Inside the substrate processing apparatus, a mounting table on which the substrate is placed is disposed at a lower part, a metal window facing the mounting table is arranged at an upper part, and a processing space is provided between the mounting table and the metal window. a processing chamber formed therein; and an inductively coupled antenna that faces the mounting table through the metal window and generates the plasma in the processing space,
The metal window has a plurality of divided windows and an insulating portion disposed between each of the adjacent divided windows,
Each of the divided windows has a first gas shower structure having a gas hole that supplies the processing gas to the processing space,
Each of the insulating parts has a second gas shower structure having a gas hole for supplying the processing gas to the processing space,
A first gas flow path for introducing the processing gas into the first gas shower structure and a second gas flow path for introducing the processing gas into the second gas shower structure are arranged. ,
The second gas flow path is independent of the first gas flow path in a portion upstream of a portion where the first gas flow path is connected to the first gas shower structure,
carrying the substrate into the processing container and placing it on the mounting table;
supplying the processing gas to the processing space from each of the first gas shower structure and the second gas shower structure;
generating the plasma from the process gas by the inductively coupled antenna;
A substrate processing method, comprising the step of subjecting the substrate to plasma treatment using the plasma.
複数の分割窓と、互いに隣接する各前記分割窓の間のそれぞれに配置された絶縁部とを有する金属窓を備え 、
各前記分割窓は、前記基板と前記金属窓の間の処理空間に向けて処理ガスを供給するガス孔を有する第１のガスシャワー構造を有し、
各前記絶縁部は、前記処理空間に向けて前記処理ガスを供給するガス孔を有する第２のガスシャワー構造を有し、
前記第２のガスシャワー構造に前記処理ガスを導入するための第２のガス流路は、前記第１のガスシャワー構造に前記処理ガスを導入するための第１のガス流路から、前記第１のガス流路が前記第１のガスシャワー構造に接続される部分よりも上流の部分において、独立する、ガス供給アセンブリ。 A gas supply assembly disposed between an inductively coupled antenna and a substrate to be subjected to plasma treatment, the gas supply assembly comprising:
A metal window having a plurality of divided windows and an insulating portion disposed between each of the adjacent divided windows,
Each of the divided windows has a first gas shower structure having a gas hole that supplies a processing gas toward a processing space between the substrate and the metal window;
Each of the insulating parts has a second gas shower structure having a gas hole that supplies the processing gas toward the processing space,
A second gas flow path for introducing the processing gas into the second gas shower structure is connected to the second gas flow path from the first gas flow path for introducing the processing gas into the first gas shower structure. A gas supply assembly in which one gas flow path is independent at a portion upstream of a portion where the first gas flow path is connected to the first gas shower structure.
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| KR1020230082303A KR20240007597A (en) | 2022-07-08 | 2023-06-27 | Substrate processing apparatus, substrate processing method and gas supply assembly |
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