JP6802093B2 - レーザー加工方法およびレーザー加工装置 - Google Patents
レーザー加工方法およびレーザー加工装置 Download PDFInfo
- Publication number
- JP6802093B2 JP6802093B2 JP2017047589A JP2017047589A JP6802093B2 JP 6802093 B2 JP6802093 B2 JP 6802093B2 JP 2017047589 A JP2017047589 A JP 2017047589A JP 2017047589 A JP2017047589 A JP 2017047589A JP 6802093 B2 JP6802093 B2 JP 6802093B2
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- irradiating
- time
- workpiece
- irradiation step
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003672 processing method Methods 0.000 title claims description 13
- 230000001678 irradiating effect Effects 0.000 claims description 72
- 230000005284 excitation Effects 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 description 89
- 238000003754 machining Methods 0.000 description 21
- 230000010287 polarization Effects 0.000 description 18
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 230000003111 delayed effect Effects 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
- B23K37/0461—Welding tables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Description
(1)被加工物に対して吸収性を有する波長のパルスレーザー光線を照射してアブレーション加工を施し分割予定ラインに溝を形成して個々のデバイスに分割するタイプ(たとえば特許文献1参照。)
(2)被加工物に対して透過性を有する波長のパルスレーザー光線の集光点を分割予定ラインの内部に位置づけてパルスレーザー光線をウエーハに照射して分割予定ラインの内部に改質層を形成して個々のデバイスに分割するタイプ(たとえば特許文献2参照。)
(3)被加工物に対して透過性を有する波長のパルスレーザー光線の集光点を分割予定ラインに位置づけてパルスレーザー光線をウエーハに照射して分割予定ラインの表面から裏面に至る細孔と細孔を囲繞する非晶質を形成し個々のデバイスに分割するタイプ(たとえば特許文献3参照。)
被加工物 電子励起時間 熱放出時間
サファイア 8ps 1μs
シリコン 20ps 5μs
リチウムタンタレート 50ps 50μs
リチウムナイオベート 50ps 50μs
銅 20ps 5μs
6:保持手段
10:レーザー光線照射手段(第一の実施形態)
44:発振器
LB:パルスレーザー光線
LB1:第一のパルスレーザー光線
LB2:第二のパルスレーザー光線
80:レーザー加工装置(第二の実施形態)
82:レーザー光線照射手段
100:レーザー加工装置(第三の実施形態)
102:レーザー光線照射手段
104:発振器
LB’:パルスレーザー光線
LB1’:第一のパルスレーザー光線
LB2’:第二のパルスレーザー光線
120:レーザー加工装置(第四の実施形態)
122:レーザー光線照射手段
124:発振器
LB”:パルスレーザー光線
LB1”:第一のパルスレーザー光線
LB2”:第二のパルスレーザー光線
Claims (2)
- 被加工物にレーザー光線を照射して加工を施すレーザー加工方法であって、
被加工物にレーザー光線を照射することによって生じる電子励起の時間より短いパルス幅を有する第一のレーザー光線を照射する第一の照射工程と、
該電子励起時間内に次の第二のレーザー光線を照射する第二の照射工程と、
を少なくとも含み、
該第一の照射工程と該第二の照射工程とを実施した後、被加工物に生じる熱が放出する時間以上の時間を空けて次の該第一の照射工程と該第二の照射工程とを実施するレーザー加工方法。 - 被加工物を保持する保持手段と、該保持手段に保持された被加工物にレーザー光線を照射するレーザー光線照射手段と、を含むレーザー加工装置であって、
該レーザー光線照射手段は、被加工物にレーザー光線を照射することによって生じる電子励起の時間よりも短いパルス幅を有するパルスレーザー光線を発振する発振器を備え、被加工物に第一のレーザー光線を照射して発生する電子励起の時間内に次の第二のレーザー光線を照射し、
該第一のレーザー光線と該第二のレーザー光線を照射した後、被加工物に生じる熱が放出する時間以上の時間を空けて次の該第一のレーザー光線と該第二のレーザー光線を照射するレーザー加工装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017047589A JP6802093B2 (ja) | 2017-03-13 | 2017-03-13 | レーザー加工方法およびレーザー加工装置 |
TW107105886A TWI760440B (zh) | 2017-03-13 | 2018-02-22 | 雷射加工方法及雷射加工裝置 |
KR1020180026839A KR102403533B1 (ko) | 2017-03-13 | 2018-03-07 | 레이저 가공 방법 및 레이저 가공 장치 |
CN201810193730.6A CN108568601B (zh) | 2017-03-13 | 2018-03-09 | 激光加工方法和激光加工装置 |
DE102018203676.4A DE102018203676A1 (de) | 2017-03-13 | 2018-03-12 | Laserbearbeitungsverfahren und Laserbearbeitungsvorrichtung |
US15/919,934 US10780524B2 (en) | 2017-03-13 | 2018-03-13 | Laser processing method and laser processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017047589A JP6802093B2 (ja) | 2017-03-13 | 2017-03-13 | レーザー加工方法およびレーザー加工装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018149571A JP2018149571A (ja) | 2018-09-27 |
JP6802093B2 true JP6802093B2 (ja) | 2020-12-16 |
Family
ID=63259278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017047589A Active JP6802093B2 (ja) | 2017-03-13 | 2017-03-13 | レーザー加工方法およびレーザー加工装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10780524B2 (ja) |
JP (1) | JP6802093B2 (ja) |
KR (1) | KR102403533B1 (ja) |
CN (1) | CN108568601B (ja) |
DE (1) | DE102018203676A1 (ja) |
TW (1) | TWI760440B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102020118019A1 (de) * | 2020-07-08 | 2022-01-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Verfahren und Vorrichtung zur Strukturierung einer Strukturschicht mittels Laserstrahlung |
JP2022148506A (ja) * | 2021-03-24 | 2022-10-06 | 株式会社ディスコ | レーザー加工装置 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10305420A (ja) | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法 |
US6552301B2 (en) * | 2000-01-25 | 2003-04-22 | Peter R. Herman | Burst-ultrafast laser machining method |
JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
JP3910474B2 (ja) * | 2002-03-15 | 2007-04-25 | 独立行政法人科学技術振興機構 | 電子励起原子移動による表面ナノスケール構造の製造方法。 |
WO2005084874A1 (ja) * | 2004-03-05 | 2005-09-15 | Olympus Corporation | レーザ加工装置 |
JP2005305470A (ja) * | 2004-04-19 | 2005-11-04 | Hikari Physics Kenkyusho:Kk | 紫外線補助超短パルスレーザ加工装置並びに方法 |
US20060000814A1 (en) * | 2004-06-30 | 2006-01-05 | Bo Gu | Laser-based method and system for processing targeted surface material and article produced thereby |
US20060088984A1 (en) * | 2004-10-21 | 2006-04-27 | Intel Corporation | Laser ablation method |
US8198566B2 (en) * | 2006-05-24 | 2012-06-12 | Electro Scientific Industries, Inc. | Laser processing of workpieces containing low-k dielectric material |
US8624157B2 (en) * | 2006-05-25 | 2014-01-07 | Electro Scientific Industries, Inc. | Ultrashort laser pulse wafer scribing |
GB2459669A (en) * | 2008-04-30 | 2009-11-04 | Xsil Technology Ltd | Dielectric layer pulsed laser scribing and metal layer and semiconductor wafer dicing |
JP2010142862A (ja) * | 2008-12-22 | 2010-07-01 | Cyber Laser Kk | 誘電体材料表面のナノ周期構造形成方法 |
US9044829B2 (en) * | 2009-11-09 | 2015-06-02 | Nlight Photonics Corporation | Fiber laser systems for cold ablation |
JP5452247B2 (ja) * | 2010-01-21 | 2014-03-26 | 東芝機械株式会社 | レーザダイシング装置 |
JP5431989B2 (ja) * | 2010-01-29 | 2014-03-05 | 株式会社ディスコ | レーザー加工装置 |
KR101181718B1 (ko) * | 2010-06-16 | 2012-09-19 | 한국과학기술원 | 펨토초 펄스 레이저의 시간에 따른 광강도 조절을 통한 절단방법 |
CN102000912B (zh) * | 2010-09-21 | 2014-06-18 | 中国科学院理化技术研究所 | 一种激光微纳加工***及方法 |
EP3650162B1 (en) * | 2010-09-21 | 2021-10-27 | Technical Institute of Physics and Chemistry, Chinese Academy of Sciences | Laser micro/nano fabricating system and method of processing a metal ion solution |
JP5912287B2 (ja) * | 2011-05-19 | 2016-04-27 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
JP5833373B2 (ja) * | 2011-08-10 | 2015-12-16 | 株式会社ディスコ | レーザー加工装置 |
JP5910075B2 (ja) * | 2011-12-27 | 2016-04-27 | 三星ダイヤモンド工業株式会社 | 被加工物の加工方法 |
JP6151557B2 (ja) | 2013-05-13 | 2017-06-21 | 株式会社ディスコ | レーザー加工方法 |
JP6401943B2 (ja) * | 2014-06-18 | 2018-10-10 | 株式会社ディスコ | レーザー加工装置 |
JP6320261B2 (ja) * | 2014-09-26 | 2018-05-09 | 株式会社ディスコ | ウエーハの加工方法 |
JP6434360B2 (ja) * | 2015-04-27 | 2018-12-05 | 株式会社ディスコ | レーザー加工装置 |
KR101944657B1 (ko) * | 2015-06-01 | 2019-01-31 | 에바나 테크놀로지스, 유에이비 | 분할된 레이저 빔들을 이용한 반도체 워크피스의 레이저 스크라이빙 방법 |
-
2017
- 2017-03-13 JP JP2017047589A patent/JP6802093B2/ja active Active
-
2018
- 2018-02-22 TW TW107105886A patent/TWI760440B/zh active
- 2018-03-07 KR KR1020180026839A patent/KR102403533B1/ko active IP Right Grant
- 2018-03-09 CN CN201810193730.6A patent/CN108568601B/zh active Active
- 2018-03-12 DE DE102018203676.4A patent/DE102018203676A1/de active Pending
- 2018-03-13 US US15/919,934 patent/US10780524B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI760440B (zh) | 2022-04-11 |
CN108568601B (zh) | 2022-05-03 |
JP2018149571A (ja) | 2018-09-27 |
US10780524B2 (en) | 2020-09-22 |
US20180257174A1 (en) | 2018-09-13 |
TW201835999A (zh) | 2018-10-01 |
CN108568601A (zh) | 2018-09-25 |
KR102403533B1 (ko) | 2022-05-27 |
KR20180104564A (ko) | 2018-09-21 |
DE102018203676A1 (de) | 2018-09-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4418282B2 (ja) | レーザ加工方法 | |
TW200815134A (en) | Laser beam machining system | |
TW200916249A (en) | Laser beam machining apparatus | |
JP6320261B2 (ja) | ウエーハの加工方法 | |
JP2017202488A (ja) | レーザー加工装置 | |
JP6802093B2 (ja) | レーザー加工方法およびレーザー加工装置 | |
JP7039238B2 (ja) | レーザー照射機構 | |
TW201805099A (zh) | 雷射加工裝置、及晶圓的產生方法 | |
JP2006114786A (ja) | レーザ加工方法 | |
JP2019013962A (ja) | レーザー加工装置 | |
JP6781649B2 (ja) | レーザー加工装置 | |
JP2019042749A (ja) | レーザー加工装置 | |
JP2021118238A (ja) | ウエーハ加工方法、及びウエーハ加工装置 | |
JP6802094B2 (ja) | レーザー加工装置 | |
JP6781650B2 (ja) | レーザー加工装置 | |
JP3873098B2 (ja) | レーザ加工方法および装置 | |
TWI707393B (zh) | 雷射加工裝置 | |
JP6308913B2 (ja) | ウエーハの加工方法 | |
JP6625928B2 (ja) | レーザー加工装置 | |
TW202402434A (zh) | 晶圓的加工方法以及晶圓的加工裝置 | |
JP2003211278A (ja) | レーザ加工装置 | |
JP6625852B2 (ja) | レーザー加工装置 | |
JP2017051985A (ja) | レーザー加工装置 | |
JP2021153087A (ja) | レーザー加工装置 | |
CN116727875A (zh) | 激光加工装置、非暂时性记录介质和被加工物的加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200109 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200923 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201001 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201104 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201126 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6802093 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |