JP6799549B2 - プラズマ処理装置の部品をクリーニングする方法 - Google Patents
プラズマ処理装置の部品をクリーニングする方法 Download PDFInfo
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- JP6799549B2 JP6799549B2 JP2018005001A JP2018005001A JP6799549B2 JP 6799549 B2 JP6799549 B2 JP 6799549B2 JP 2018005001 A JP2018005001 A JP 2018005001A JP 2018005001 A JP2018005001 A JP 2018005001A JP 6799549 B2 JP6799549 B2 JP 6799549B2
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- space
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- plasma
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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Description
Claims (13)
- プラズマ処理装置の部品をクリーニングする方法であって、前記部品は、前記プラズマ処理装置の処理チャンバによって画成される内部空間の中に配置される部品であり、該方法は、
前記部品の表面上に被膜を形成する工程であり、第1のガスに含まれる第1の化合物と第2のガスに含まれる第2の化合物との重合により、該被膜を構成する化合物が形成され、前記第1の化合物がイソシアネートであり、前記第2の化合物がアミン又は水酸基を有する化合物である、該工程と、
前記内部空間の中で基板処理を実行する工程と、
前記内部空間の中で基板処理を実行する前記工程の後に、前記処理チャンバから加熱チャンバに前記部品を移動させる工程と、
前記被膜を構成する前記化合物の解重合が生じるように、前記部品を加熱する工程と、
を含む方法。 - 前記処理チャンバとは別の成膜チャンバの中に前記部品を配置する工程を更に含み、
前記部品の表面上に被膜を形成する前記工程では、前記成膜チャンバの中で前記被膜が前記部品の表面上に形成され、
前記部品の表面上に被膜を形成する前記工程の後、前記基板処理の前に、前記部品が、前記内部空間の中の所定位置に配置される、
請求項1に記載の方法。 - 前記処理チャンバと前記成膜チャンバは、減圧可能な搬送チャンバを介して接続されており、
成膜チャンバの中に前記部品を配置する前記工程及び前記内部空間の中の前記所定位置に前記部品を配置する工程では、搬送機構により前記搬送チャンバを介して前記処理チャンバと前記成膜チャンバとの間で前記部品が搬送される、
請求項2に記載の方法。 - 前記加熱チャンバは前記搬送チャンバに接続されており、
前記部品を移動させる前記工程では、前記搬送機構により前記搬送チャンバを介して前記処理チャンバと前記加熱チャンバとの間で前記部品が搬送される、
請求項3に記載の方法。 - 前記部品を加熱する前記工程の後、前記成膜チャンバの中に前記部品を搬送する工程を更に含む、請求項2〜4の何れか一項に記載の方法。
- 前記加熱チャンバは前記成膜チャンバである、請求項2〜5の何れか一項に記載の方法。
- 前記基板処理は、成膜処理及びエッチングのうち少なくとも一方を含む、請求項1〜6の何れか一項に記載の方法。
- 前記基板処理は、化学気相成長(CVD)法による成膜処理、プラズマ強化CVD法による成膜処理、原子層堆積(ALD)法による成膜処理、又はプラズマ強化ALD法による成膜処理を含む、請求項7に記載の方法。
- 前記基板処理は前記成膜処理と前記エッチングを含み、該エッチングは前記成膜処理の後に実行されるプラズマエッチングである、請求項7又は8に記載の方法。
- 前記基板処理によって処理される基板は、下地膜及びマスクを有し、該マスクは、該下地膜上に設けられており、開口を提供しており、
前記成膜処理は、原子層堆積法によって行われ、
前記内部空間に前駆体ガスを供給する工程と、
前記内部空間をパージする工程と、
前記内部空間に、前記前駆体ガスに含まれる前駆体と反応する反応性ガスを供給する工程と、
前記内部空間をパージする工程と、
を含み、
前記成膜処理によって前記基板上に形成される膜は、前記開口を画成する前記マスクの側壁面に沿って延在する第1領域及び前記下地膜上で延在する第2領域を含み、
前記プラズマエッチングは、前記第1領域を除去せずに前記第2領域を除去するために実行される、
請求項9に記載の方法。 - 反応性ガスを供給する前記工程において、該反応性ガスのプラズマが前記内部空間の中で生成される、請求項10に記載の方法。
- 前記内部空間は、そこで基板処理が行われる第1空間及び該第1空間とは別の第2空間を含み、
前記プラズマ処理装置は、
前記第1空間と前記第2空間との境界上で延在し、それらを介して前記第1空間と前記第2空間とが互いに連通する複数の貫通孔を有する隔壁と、
前記第1空間内でその上に載置された基板を支持するように構成された支持台と、
前記第1空間に接続されたガス供給系と、
前記第2空間に接続された排気装置と、
を含む、請求項1〜11の何れか一項に記載の方法。 - 前記内部空間を画成する表面は、第1表面及び第2表面を含み、該第1表面は前記第1空間を画成し、該第2表面は前記第2空間を画成し、
前記部品の表面は、前記第2表面の一部である領域を含む、
請求項12に記載の方法。
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