JP6789721B2 - 基板処理方法及び基板処理装置 - Google Patents
基板処理方法及び基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 65
- 238000003672 processing method Methods 0.000 title claims description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 64
- 239000010936 titanium Substances 0.000 claims description 64
- 229910052719 titanium Inorganic materials 0.000 claims description 64
- 238000005530 etching Methods 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 150000001768 cations Chemical class 0.000 claims description 11
- 239000000460 chlorine Substances 0.000 claims description 10
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 9
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 148
- 239000007789 gas Substances 0.000 description 17
- 239000003112 inhibitor Substances 0.000 description 12
- 238000003486 chemical etching Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 11
- 238000007790 scraping Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000002438 flame photometric detection Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Thin Film Transistor (AREA)
Description
10 基板処理装置
17 バイアス用高周波電源
26 有機絶縁膜
30 メタル膜
31 下層チタン膜
Claims (7)
- 有機膜の上に形成されたメタル膜を有する基板にプラズマを用いたエッチングを施す基板処理方法であって、
前記基板へ前記プラズマにおける陽イオンを引きこむためのバイアス電圧を、最初に連続印加し、前記有機膜が露出するよりも所定の時間ほど前から前記バイアス電圧をパルス印加し始め、前記有機膜が露出した後も前記バイアス電圧のパルス印加を継続して前記メタル膜をエッチングし、
前記バイアス電圧のパルス印加におけるデューティー比は50%〜70%であることを特徴とする基板処理方法。 - 有機膜の上に形成されたメタル膜を有する基板にプラズマを用いたエッチングを施す基板処理方法であって、
前記基板へ前記プラズマにおける陽イオンを引きこむためのバイアス電圧を、最初に連続印加し、前記有機膜が露出するよりも所定の時間ほど前から前記バイアス電圧をパルス印加し始め、前記有機膜が露出した後も前記バイアス電圧のパルス印加を継続して前記メタル膜をエッチングし、
前記エッチングの進行に伴い、前記バイアス電圧のパルス印加におけるデューティー比を小さくしていくことを特徴とする基板処理方法。 - 前記メタル膜は少なくともチタンを含むことを特徴とする請求項1又は2に記載の基板処理方法。
- 前記メタル膜は少なくともアルミニウムを含むことを特徴とする請求項1又は2に記載の基板処理方法。
- 前記メタル膜は下層側からチタン膜、アルミニウム膜及びチタン膜をこの順で積層してなるチタン/アルミニウム/チタン膜からなることを特徴とする請求項3又は4に記載の基板処理方法。
- 前記プラズマは塩素系ガスを含む処理ガスから生成されることを特徴とする請求項1乃至5のいずれか1項に記載の基板処理方法。
- 前記塩素系ガスは塩素(Cl2)ガス又は三塩化硼素(BCl3)ガスを含むことを特徴とする請求項6記載の基板処理方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016158745A JP6789721B2 (ja) | 2016-08-12 | 2016-08-12 | 基板処理方法及び基板処理装置 |
KR1020170101375A KR102011567B1 (ko) | 2016-08-12 | 2017-08-10 | 기판 처리 방법 및 기판 처리 장치 |
CN201710680020.1A CN107731682B (zh) | 2016-08-12 | 2017-08-10 | 基板处理方法和基板处理装置 |
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JP2016158745A JP6789721B2 (ja) | 2016-08-12 | 2016-08-12 | 基板処理方法及び基板処理装置 |
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JP2018026501A JP2018026501A (ja) | 2018-02-15 |
JP6789721B2 true JP6789721B2 (ja) | 2020-11-25 |
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JP (1) | JP6789721B2 (ja) |
KR (1) | KR102011567B1 (ja) |
CN (1) | CN107731682B (ja) |
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KR20210021936A (ko) * | 2018-06-22 | 2021-03-02 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 플라즈마 에칭 방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3629705B2 (ja) * | 1997-06-06 | 2005-03-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JPH11340213A (ja) * | 1998-03-12 | 1999-12-10 | Hitachi Ltd | 試料の表面加工方法 |
JP4583533B2 (ja) * | 1999-12-27 | 2010-11-17 | 株式会社半導体エネルギー研究所 | 金属配線の形成方法 |
JP2002016047A (ja) * | 2000-06-29 | 2002-01-18 | Nec Corp | 半導体装置の配線エッチング方法 |
JP2002294470A (ja) * | 2001-04-02 | 2002-10-09 | Sony Corp | エッチング方法 |
TWI243407B (en) * | 2003-06-03 | 2005-11-11 | Dainippon Screen Mfg | Method and apparatus for etching a substrate |
JP2006120983A (ja) * | 2004-10-25 | 2006-05-11 | Hitachi High-Technologies Corp | プラズマエッチング方法 |
US7718538B2 (en) * | 2007-02-21 | 2010-05-18 | Applied Materials, Inc. | Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates |
JP5361651B2 (ja) * | 2008-10-22 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5221403B2 (ja) * | 2009-01-26 | 2013-06-26 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置および記憶媒体 |
JP5558224B2 (ja) * | 2010-06-23 | 2014-07-23 | 東京エレクトロン株式会社 | 基板処理方法 |
JP2015076487A (ja) | 2013-10-08 | 2015-04-20 | 株式会社ジャパンディスプレイ | 液晶表示装置の製造方法 |
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2016
- 2016-08-12 JP JP2016158745A patent/JP6789721B2/ja active Active
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2017
- 2017-08-10 CN CN201710680020.1A patent/CN107731682B/zh active Active
- 2017-08-10 KR KR1020170101375A patent/KR102011567B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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JP2018026501A (ja) | 2018-02-15 |
KR102011567B1 (ko) | 2019-08-16 |
CN107731682B (zh) | 2021-10-26 |
CN107731682A (zh) | 2018-02-23 |
KR20180018409A (ko) | 2018-02-21 |
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