JP6789570B2 - 活性領域がInNの層を含む発光ダイオード - Google Patents
活性領域がInNの層を含む発光ダイオード Download PDFInfo
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- JP6789570B2 JP6789570B2 JP2016535482A JP2016535482A JP6789570B2 JP 6789570 B2 JP6789570 B2 JP 6789570B2 JP 2016535482 A JP2016535482 A JP 2016535482A JP 2016535482 A JP2016535482 A JP 2016535482A JP 6789570 B2 JP6789570 B2 JP 6789570B2
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- 239000010410 layer Substances 0.000 claims description 292
- 229910052738 indium Inorganic materials 0.000 claims description 32
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 28
- 238000000926 separation method Methods 0.000 claims description 27
- 230000006798 recombination Effects 0.000 claims description 25
- 238000005215 recombination Methods 0.000 claims description 25
- 239000002070 nanowire Substances 0.000 claims description 21
- 230000005855 radiation Effects 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000002356 single layer Substances 0.000 claims description 10
- 238000009825 accumulation Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 description 21
- 230000004888 barrier function Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 239000000370 acceptor Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
放射再結合が生じることができ、
前記活性領域が、少なくとも
−厚さeInN106を有する第1のInN層、
−厚さeInN108を有する第2のInN層、
−前記第1のInN層及び前記第2のInN層の間に配される分離層であって、前記第1のInN層が、前記分離層及び前記n型ドーピングInXnGa(1―Xn)N層の間に配され、前記分離層が、InXbGa(1−Xb)Nを含み、約3nm以下の厚さを有する、分離層、
−前記n型ドーピングInXnGa(1―Xn)N層及び前記第1のInN層の間に配されるInX1Ga(1−X1)N層、
−前記p型ドーピングInXpGa(1―Xp)N層及び前記第2のInN層の間に配されるInX2Ga(1−X2)N層、
を含み、
前記インジウムの組成Xn、Xp、Xb、X1及びX2が、0から約0.25の間であり、前記厚さeInN106及び前記厚さeInN108がeInN106≦eInN108である、発光ダイオードを提供する。
101 第1の金属電極
102 n型ドーピングInXnGa(1―Xn)N層
103 第2の金属電極
104 p型ドーピングInXpGa(1−Xp)N層
105 活性領域
106 第1のInN層
108 第2のInN層
110 分離層
112 InX1Ga(1−X1)N層
114 InX2Ga(1−X2)N層
120 電子
122 正孔
124 半導体基板
126 核形成層
128 絶縁部分
Claims (10)
- 発光ダイオード(100)のpn接合を共に形成する少なくとも1つのn型ドーピングInXnGa(1―Xn)N層(102)及びp型ドーピングInXpGa(1−Xp)N層(104)、並びに前記n型ドーピングInXnGa(1―Xn)N層(102)及び前記p型ドーピングInXpGa(1−Xp)N層(104)の間に配される活性領域(105)を含む発光ダイオード(100)であって、
放射再結合が生じることができ、
前記活性領域(105)が、少なくとも
−発光層を形成し、1モノレイヤから3モノレイヤの間の厚さeInN106を有する第1のInN層(106)、
−正孔蓄積を形成し、厚さeInN108を有する第2のInN層(108)、
−前記第1のInN層(106)及び前記第2のInN層(108)の間に配される分離層(110)であって、前記第1のInN層(106)が、前記分離層(110)及び前記n型ドーピングInXnGa(1―Xn)N層(102)の間に配され、前記分離層(110)が、InXbGa(1−Xb)Nを含み、約3nm以下の厚さを有する、分離層(110)、
−前記n型ドーピングInXnGa(1―Xn)N層(102)及び前記第1のInN層(106)の間に配されるInX1Ga(1−X1)N層(112)、
−前記p型ドーピングInXpGa(1―Xp)N層(104)及び前記第2のInN層(108)の間に配されるInX2Ga(1−X2)N層(114)、
を含み、
前記インジウムの組成Xn、Xp、X1及びX2が、0から0.25の間であり、前記インジウムの組成Xbが0.05以上、0.25以下であり、前記厚さeInN106及び前記厚さeInN108がeInN106<eInN108である、発光ダイオード(100)。 - 前記厚さeInN108が、1モノレイヤから3モノレイヤの間である、請求項1に記載の発光ダイオード(100)。
- 前記第1のInN層(106)及び前記第2のInN層(108)の1つ又は各々が、2モノレイヤから3モノレイヤの厚さを有するとき、前記インジウムの組成Xbが、約0.15以上であり、又は、前記インジウムの組成Xbが約0.15未満であるとき、前記第1のInN層(106)及び前記第2のInN層(108)の前記1つ又は各々の厚さが、2モノレイヤ以下である、請求項2に記載の発光ダイオード(100)。
- 前記インジウムの組成X1及びX2が、X1≦X2であり、又は、前記インジウムの組成Xn、Xp、Xb、X1及びX2が、Xn<X1<X2<Xp、若しくは、Xn=Xp=0及び/又はX1=Xb=X2である、請求項1から3の何れか一項に記載の発光ダイオード(100)。
- 前記n型ドーピングInXnGa(1―Xn)N層(102)の厚さ及び/又は前記p型ドーピングInXpGa(1−Xp)N層(104)の厚さが、約20nmから10μmであり、及び/又は、前記InX1Ga(1−X1)N層(112)の厚さ及び/又は前記InX2Ga(1−X2)N層(114)の厚さが、約1nmから200nmの間である、請求項1から4の何れか一項に記載の発光ダイオード(100)。
- 前記n型ドーピングInXnGa(1―Xn)N層(102)上に形成される第1の金属電極(101)及び前記p型ドーピングInXpGa(1−Xp)N層(104)上に形成される第2の金属電極(103)をさらに含む、請求項1から5の何れか一項に記載の発光ダイオード(100)。
- 前記活性領域(105)が、前記第1のInN層(106)及び前記第2のInN層(108)に加えて、少なくとも1つの追加のInN層を含み、前記追加のInN層が、InGaN又はGaNを含み、約3nm以下の厚さを有する追加の分離層によって前記第1のInN層(106)及び前記第2のInN層(108)から分離される、請求項1から6の何れか一項に記載の発光ダイオード(100)。
- 前記活性領域(105)に加えて、前記n型ドーピングInXnGa(1―Xn)N層(102)及び前記p型ドーピングInXpGa(1−Xp)N層(104)の間に配され、放射再結合が生じることができる追加の活性領域を含む、請求項1から7の何れか一項に記載の発光ダイオード(100)。
- 前記n型ドーピングInXnGa(1―Xn)N層(102)及び前記活性領域(105)の間に、n型ドーピングInGaNバッファ層(110)をさらに含み、前記バッファ層(110)のn型ドーピングInGaNが、前記p型ドーピングInXpGa(1−Xp)Nのバンドギャップエネルギーの約97%以下のバンドギャップエネルギーを有する、請求項1から8の何れか一項に記載の発光ダイオード(100)。
- 前記発光ダイオード(100)の層が、互いの上に成長することによって作られた平坦な層であり、又は、前記発光ダイオード(100)の層が、半径方向又は軸方向のナノワイヤとして成長することによって作られた、請求項1から9の何れか一項に記載の発光ダイオード(100)の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1358121A FR3009894B1 (fr) | 2013-08-22 | 2013-08-22 | Diode electroluminescente dont une zone active comporte des couches d'inn |
FR1358121 | 2013-08-22 | ||
PCT/EP2014/067843 WO2015025007A1 (fr) | 2013-08-22 | 2014-08-21 | Diode electroluminescente dont une zone active comporte des couches d'inn |
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JP2016531442A JP2016531442A (ja) | 2016-10-06 |
JP2016531442A5 JP2016531442A5 (ja) | 2020-07-09 |
JP6789570B2 true JP6789570B2 (ja) | 2020-11-25 |
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Country Status (6)
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US (1) | US10153393B2 (ja) |
EP (1) | EP3036776B1 (ja) |
JP (1) | JP6789570B2 (ja) |
CN (1) | CN105917476B (ja) |
FR (1) | FR3009894B1 (ja) |
WO (1) | WO2015025007A1 (ja) |
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FR3000612B1 (fr) * | 2012-12-28 | 2016-05-06 | Commissariat Energie Atomique | Dispositif optoelectronique a microfils ou nanofils |
WO2018098436A1 (en) | 2016-11-28 | 2018-05-31 | Spy Eye, Llc | Unobtrusive eye mounted display |
WO2019106931A1 (ja) * | 2017-12-01 | 2019-06-06 | ソニーセミコンダクタソリューションズ株式会社 | 半導体発光素子 |
US10673414B2 (en) | 2018-02-05 | 2020-06-02 | Tectus Corporation | Adaptive tuning of a contact lens |
US10505394B2 (en) | 2018-04-21 | 2019-12-10 | Tectus Corporation | Power generation necklaces that mitigate energy absorption in the human body |
US10838239B2 (en) | 2018-04-30 | 2020-11-17 | Tectus Corporation | Multi-coil field generation in an electronic contact lens system |
US10895762B2 (en) | 2018-04-30 | 2021-01-19 | Tectus Corporation | Multi-coil field generation in an electronic contact lens system |
US10790700B2 (en) | 2018-05-18 | 2020-09-29 | Tectus Corporation | Power generation necklaces with field shaping systems |
US11137622B2 (en) | 2018-07-15 | 2021-10-05 | Tectus Corporation | Eye-mounted displays including embedded conductive coils |
US10529107B1 (en) | 2018-09-11 | 2020-01-07 | Tectus Corporation | Projector alignment in a contact lens |
US10838232B2 (en) | 2018-11-26 | 2020-11-17 | Tectus Corporation | Eye-mounted displays including embedded solenoids |
US10644543B1 (en) | 2018-12-20 | 2020-05-05 | Tectus Corporation | Eye-mounted display system including a head wearable object |
US10944290B2 (en) | 2019-08-02 | 2021-03-09 | Tectus Corporation | Headgear providing inductive coupling to a contact lens |
CN113990989B (zh) * | 2021-12-29 | 2022-03-08 | 材料科学姑苏实验室 | 一种紫外发光二极管外延片及其制作方法 |
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GB9913950D0 (en) | 1999-06-15 | 1999-08-18 | Arima Optoelectronics Corp | Unipolar light emitting devices based on iii-nitride semiconductor superlattices |
JP2002280673A (ja) * | 2001-03-15 | 2002-09-27 | Sony Corp | 半導体発光素子 |
US7058105B2 (en) | 2002-10-17 | 2006-06-06 | Samsung Electro-Mechanics Co., Ltd. | Semiconductor optoelectronic device |
FI20041213A0 (fi) * | 2004-09-17 | 2004-09-17 | Optogan Oy | Puolijohdeheterorakenne |
KR100658970B1 (ko) | 2006-01-09 | 2006-12-19 | 주식회사 메디아나전자 | 복합 파장의 광을 발생시키는 발광 다이오드 소자 |
US20080111144A1 (en) | 2006-11-15 | 2008-05-15 | The Regents Of The University Of California | LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GaN, InN, AND AlN AND THEIR ALLOYS |
JP2010510655A (ja) | 2006-11-15 | 2010-04-02 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | N面GaN、InNおよびAlNならびにそれらの合金を用いた発光ダイオードおよびレーザダイオード |
JP4927606B2 (ja) | 2007-03-08 | 2012-05-09 | 古河電気工業株式会社 | 半導体発光素子 |
JP5097532B2 (ja) | 2007-12-21 | 2012-12-12 | パナソニック株式会社 | 化合物半導体発光素子の製造方法 |
DE102009015569B9 (de) | 2009-03-30 | 2023-06-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
US10115859B2 (en) | 2009-12-15 | 2018-10-30 | Lehigh University | Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer |
DE102010012711A1 (de) | 2010-03-25 | 2011-09-29 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements |
EP2503603B1 (en) * | 2011-03-25 | 2019-09-25 | LG Innotek Co., Ltd. | Light emitting device and method for manufacturing the same |
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- 2013-08-22 FR FR1358121A patent/FR3009894B1/fr not_active Expired - Fee Related
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- 2014-08-21 WO PCT/EP2014/067843 patent/WO2015025007A1/fr active Application Filing
- 2014-08-21 EP EP14755068.5A patent/EP3036776B1/fr active Active
- 2014-08-21 CN CN201480046545.4A patent/CN105917476B/zh active Active
- 2014-08-21 US US14/913,254 patent/US10153393B2/en active Active
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Publication number | Publication date |
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EP3036776B1 (fr) | 2018-10-17 |
FR3009894A1 (fr) | 2015-02-27 |
FR3009894B1 (fr) | 2016-12-30 |
CN105917476A (zh) | 2016-08-31 |
US10153393B2 (en) | 2018-12-11 |
EP3036776A1 (fr) | 2016-06-29 |
US20160204307A1 (en) | 2016-07-14 |
CN105917476B (zh) | 2018-04-06 |
JP2016531442A (ja) | 2016-10-06 |
WO2015025007A1 (fr) | 2015-02-26 |
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