JP6755285B2 - アバランシェ・フォトダイオード - Google Patents
アバランシェ・フォトダイオード Download PDFInfo
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- JP6755285B2 JP6755285B2 JP2018158507A JP2018158507A JP6755285B2 JP 6755285 B2 JP6755285 B2 JP 6755285B2 JP 2018158507 A JP2018158507 A JP 2018158507A JP 2018158507 A JP2018158507 A JP 2018158507A JP 6755285 B2 JP6755285 B2 JP 6755285B2
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- 230000031700 light absorption Effects 0.000 claims description 197
- 230000005684 electric field Effects 0.000 claims description 126
- 239000004065 semiconductor Substances 0.000 claims description 68
- 239000012535 impurity Substances 0.000 claims description 39
- 238000009792 diffusion process Methods 0.000 claims description 33
- 230000004888 barrier function Effects 0.000 claims description 20
- 238000013459 approach Methods 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 description 20
- 238000000034 method Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 16
- 238000010521 absorption reaction Methods 0.000 description 15
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 14
- 239000000969 carrier Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 10
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- 238000006243 chemical reaction Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Description
はじめに、本発明の実施の形態1について、図1を用いて説明する。図1は、本発明の実施の形態1におけるアバランシェ・フォトダイオードの構成を示す断面図である。このアバランシェ・フォトダイオードは、p型の半導体からなるp型電極層101と、p型電極層101の上に形成されたp型の半導体からなる第1光吸収層102と、第1光吸収層102の上に形成された増倍層103とを備える。第1光吸収層102は、p型の不純物が導入(ドーピング)されてp型とされている。なお、第1光吸収層102は、アバランシェ・フォトダイオードの動作電圧において、前記増倍層103との界面から数10nm以下しか空乏化しない程度に不純物がドーピングされている。
次に、本発明の実施の形態2について、図5を用いて説明する。図5は、本発明の実施の形態2におけるアバランシェ・フォトダイオードの構成を示す断面図である。
次に、本発明の実施の形態3について、図6を用いて説明する。図6は、本発明の実施の形態3におけるアバランシェ・フォトダイオードの構成を示す断面図である。
次に、本発明の実施の形態4について、図8を用いて説明する。図8は、本発明の実施の形態4におけるアバランシェ・フォトダイオードの構成を示す断面図である。
次に、本発明の実施の形態5について、図9を用いて説明する。図9は、本発明の実施の形態5におけるアバランシェ・フォトダイオードの構成を示す断面図である。このアバランシェ・フォトダイオードは、基板501と、基板501の上に形成されたp型の半導体からなるp型電極層502と、p型電極層502の上に形成されたp型の半導体からなる拡散障壁層503と、拡散障壁層503の上に形成されたp型の半導体からなる第1光吸収層504と、第1光吸収層504の上に形成された増倍層505とを備える。第1光吸収層504は、p型の不純物がドーピングされてp型とされている。なお、第1光吸収層504は、アバランシェ・フォトダイオードの動作電圧において、前記増倍層505との界面から数10nm以下しか空乏化しない程度に不純物がドーピングされている。
Claims (5)
- p型の半導体からなるp型電極層と、
前記p型電極層の上に形成されたp型の半導体からなる第1光吸収層と、
前記第1光吸収層の上に形成された増倍層と、
前記増倍層の上に形成された電界制御層と、
前記電界制御層の上に形成された第2光吸収層と、
前記第2光吸収層の上に形成されたn型の半導体からなるn型電極層と、
前記p型電極層に接続するp電極と、
前記n型電極層に接続するn電極と、
前記増倍層と前記第1光吸収層との間に形成された、バンドギャップエネルギーが前記増倍層より大きいp型の半導体からなるp型半導体層と
を備え、
前記第1光吸収層には、動作電圧において、前記増倍層との界面から数10nm以下しか空乏化しない濃度のp型の不純物が導入されている、
ことを特徴とするアバランシェ・フォトダイオード。
- 請求項1記載のアバランシェ・フォトダイオードにおいて、 前記第1光吸収層および 前記増倍層は、前記n型電極層より大きな面積に形成されていることを特徴とするアバランシェ・フォトダイオード。
- 請求項1または2記載のアバランシェ・フォトダイオードにおいて、
前記p型電極層と前記第1光吸収層との間に配置され、前記第1光吸収層よりも伝導帯端が高い位置にあるp型の半導体からなる拡散障壁層を備えることを特徴とするアバランシェ・フォトダイオード。
- 請求項1〜3のいずれか1項に記載のアバランシェ・フォトダイオードにおいて、
前記第2光吸収層と前記n型電極層との間に配置され、バンドギャップエネルギーが前記第2光吸収層よりも大きな半導体からなるエッジ電界緩和層を備えることを特徴とするアバランシェ・フォトダイオード。
- 請求項1〜4のいずれか1項に記載のアバランシェ・フォトダイオードにおいて、
前記増倍層と前記第2光吸収層との間に形成された前記電界制御層は、n型とされ、
前記第1光吸収層は、前記p型電極層の側から前記第2光吸収層の側にかけて、前記第2光吸収層に近いほど低い不純物濃度とされていることを特徴とするアバランシェ・フォトダイオード。
Applications Claiming Priority (2)
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JP2014246574 | 2014-12-05 | ||
JP2014246574 | 2014-12-05 |
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JP2016562419A Division JPWO2016088668A1 (ja) | 2014-12-05 | 2015-11-27 | アバランシェ・フォトダイオード |
Publications (2)
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JP2019024091A JP2019024091A (ja) | 2019-02-14 |
JP6755285B2 true JP6755285B2 (ja) | 2020-09-16 |
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JP2016562419A Pending JPWO2016088668A1 (ja) | 2014-12-05 | 2015-11-27 | アバランシェ・フォトダイオード |
JP2018158507A Active JP6755285B2 (ja) | 2014-12-05 | 2018-08-27 | アバランシェ・フォトダイオード |
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Country Status (6)
Country | Link |
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US (1) | US10297705B2 (ja) |
EP (1) | EP3229279B1 (ja) |
JP (2) | JPWO2016088668A1 (ja) |
CN (1) | CN107004734A (ja) |
CA (1) | CA2969509C (ja) |
WO (1) | WO2016088668A1 (ja) |
Families Citing this family (14)
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JP6573186B2 (ja) * | 2016-04-21 | 2019-09-11 | パナソニックIpマネジメント株式会社 | 撮像装置及びそれを備えたカメラシステム |
WO2019049718A1 (ja) * | 2017-09-06 | 2019-03-14 | 日本電信電話株式会社 | アバランシェフォトダイオードおよびその製造方法 |
CN107644921B (zh) * | 2017-10-18 | 2023-08-29 | 五邑大学 | 一种新型雪崩二极管光电探测器及其制备方法 |
DE102018130478A1 (de) * | 2018-11-30 | 2020-06-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Lawinen-Fotodiode |
CN109742176B (zh) * | 2019-02-22 | 2020-08-28 | 京东方科技集团股份有限公司 | 基于雪崩光电二极管的光检测传感器及其制备方法 |
CN110047967A (zh) * | 2019-03-29 | 2019-07-23 | 中国科学院上海技术物理研究所 | 一种宽谱InGaAs雪崩焦平面探测器及其制造方法 |
JP6793786B1 (ja) * | 2019-06-28 | 2020-12-02 | 沖電気工業株式会社 | 半導体受光素子、光電融合モジュール及びアバランシェフォトダイオードの製造方法 |
WO2021100088A1 (ja) | 2019-11-18 | 2021-05-27 | 日本電信電話株式会社 | アバランシェフォトダイオード |
CN111312835B (zh) * | 2020-02-19 | 2023-04-11 | 中国电子科技集团公司第四十四研究所 | 单电子传输雪崩光电二极管结构及制作方法 |
US20230327041A1 (en) * | 2020-08-28 | 2023-10-12 | National Research Council Of Canada | Mesa avalanche photodiode with sidewall passivation |
CN115443546A (zh) * | 2020-12-21 | 2022-12-06 | 华为技术有限公司 | 一种雪崩光电二极管 |
US20220246781A1 (en) * | 2021-02-04 | 2022-08-04 | Mellanox Technologies, Ltd. | High modulation speed pin-type photodiode |
CN115188854A (zh) * | 2022-07-01 | 2022-10-14 | 中国科学院半导体研究所 | 一种光电探测器及其制备方法 |
CN117913161B (zh) * | 2024-03-20 | 2024-05-31 | 度亘核芯光电技术(苏州)有限公司 | 多崖层调控高速单行载流子光电探测器 |
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2015
- 2015-11-27 CN CN201580066179.3A patent/CN107004734A/zh active Pending
- 2015-11-27 WO PCT/JP2015/083358 patent/WO2016088668A1/ja active Application Filing
- 2015-11-27 US US15/532,469 patent/US10297705B2/en active Active
- 2015-11-27 JP JP2016562419A patent/JPWO2016088668A1/ja active Pending
- 2015-11-27 EP EP15864741.2A patent/EP3229279B1/en active Active
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US10297705B2 (en) | 2019-05-21 |
JPWO2016088668A1 (ja) | 2017-07-06 |
CA2969509C (en) | 2019-06-18 |
EP3229279A4 (en) | 2018-07-25 |
CA2969509A1 (en) | 2016-06-09 |
US20180331246A1 (en) | 2018-11-15 |
CN107004734A (zh) | 2017-08-01 |
WO2016088668A1 (ja) | 2016-06-09 |
EP3229279B1 (en) | 2020-10-28 |
JP2019024091A (ja) | 2019-02-14 |
EP3229279A1 (en) | 2017-10-11 |
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