JP6744870B2 - マイクロ発光ダイオードの転写方法、製造方法、マイクロ発光ダイオード装置、及び電子機器 - Google Patents
マイクロ発光ダイオードの転写方法、製造方法、マイクロ発光ダイオード装置、及び電子機器 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
- Wire Bonding (AREA)
Description
Claims (8)
- レーザー透過性のオリジナル基板に、P電極とN電極が同一側に位置する横方向マイクロ発光ダイオードであるマイクロ発光ダイオードを形成することと、
横方向マイクロ発光ダイオードのP電極とN電極を受け基板に予め設置された接続パッドに接触させることと、
オリジナル基板側からレーザーでオリジナル基板を照射することにより、オリジナル基板から横方向マイクロ発光ダイオードを剥離することと、
を含むマイクロ発光ダイオードの転写方法であって、
横方向マイクロ発光ダイオードは磁気材料を含み、電磁力の作用により、横方向マイクロ発光ダイオードのP電極とN電極を受け基板に予め設置された接続パッドと接触させることを特徴とする、マイクロ発光ダイオードの転写方法。 - 受け基板に異方性導電層を設置することと、
異方性導電層に対する処理を行うことにより、横方向マイクロ発光ダイオードのP電極とN電極を受け基板における接続パッドに電気的に接続させることと、
をさらに含み、
異方性導電層を介して、横方向マイクロ発光ダイオードのP電極とN電極を受け基板に予め設置された接続パッドと接触させる、
ことを特徴とする請求項1に記載の転写方法。 - 異方性導電層は、異方性電導膜、異方性電導ペースト及び異方性導電テープの少なくとも一つであることを特徴とする請求項2に記載の転写方法。
- 重力作用により、横方向マイクロ発光ダイオードのP電極とN電極を受け基板に予め設置された接続パッドと接触させることを特徴とする請求項1に記載の転写方法。
- 静電力の作用により、横方向マイクロ発光ダイオードのP電極とN電極を受け基板に予め設置された接続パッドと接触させることを特徴とする請求項1に記載の転写方法。
- 前記接続パッドに電圧を印加することにより前記静電力を印加することを特徴とする請求項5に記載の転写方法。
- 横方向マイクロ発光ダイオードのP電極とN電極に含まれる半田バンプを前記接続パッドに接合させることをさらに含む、ことを特徴とする請求項1に記載の転写方法。
- 請求項1に記載の転写方法を用いて横方向マイクロ発光ダイオードを受け基板に転写することを含む、ことを特徴とするマイクロ発光ダイオード装置の製造方法。
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PCT/CN2015/083990 WO2017008254A1 (en) | 2015-07-14 | 2015-07-14 | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
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JP2017539097A JP2017539097A (ja) | 2017-12-28 |
JP2017539097A5 JP2017539097A5 (ja) | 2019-08-08 |
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US (1) | US10141287B2 (ja) |
EP (1) | EP3221903B1 (ja) |
JP (1) | JP6744870B2 (ja) |
CN (1) | CN105493298B (ja) |
WO (1) | WO2017008254A1 (ja) |
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WO2017008254A1 (en) | 2017-01-19 |
JP2017539097A (ja) | 2017-12-28 |
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EP3221903B1 (en) | 2019-06-19 |
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