JP6736132B1 - パワー半導体モジュール - Google Patents
パワー半導体モジュール Download PDFInfo
- Publication number
- JP6736132B1 JP6736132B1 JP2019079157A JP2019079157A JP6736132B1 JP 6736132 B1 JP6736132 B1 JP 6736132B1 JP 2019079157 A JP2019079157 A JP 2019079157A JP 2019079157 A JP2019079157 A JP 2019079157A JP 6736132 B1 JP6736132 B1 JP 6736132B1
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- Japan
- Prior art keywords
- power semiconductor
- circuit pattern
- semiconductor element
- resin
- semiconductor module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 239000011347 resin Substances 0.000 claims abstract description 24
- 229920005989 resin Polymers 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000009477 glass transition Effects 0.000 claims abstract description 8
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- 239000002923 metal particle Substances 0.000 claims abstract description 4
- 238000010304 firing Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
Abstract
Description
3 回路パターン 4 パワー半導体素子
5 ダイアタッチ材 6 ワイヤー
7 端子 8 樹脂
9 回路パターン 10 リードフレーム
Claims (3)
- 基板の回路パターンにパワー半導体素子の下面をダイボンディングで接続するとともに、回路パターンとパワー半導体素子の上面とをワイヤーを用いてワイヤーボンディングで接続し、回路パターンに端子を接続し、全ての接続部分を樹脂で封止したパワー半導体モジュールにおいて、
前記全ての接続部分が、前記パワー半導体素子と前記ワイヤーと前記全ての接続部分とを封止する樹脂のガラス転移点よりも高い融点を有して、前記樹脂のガラス転移よりも先に前記接続部分が溶断しないことを特徴とするパワー半導体モジュール。 - 前記基板の上面の回路パターンにパワー半導体素子を実装するとともに、パワー半導体素子の直下方に位置する基板の下面の回路パターンを樹脂から露出させたことを特徴とする請求項1に記載のパワー半導体モジュール。
- 前記回路パターンとパワー半導体素子の下面とを金属粒子焼成結合により接続するとともに、前記回路パターンとパワー半導体素子の上面及び端子とを超音波接合により接続したことを特徴とする請求項1又は請求項2に記載のパワー半導体モジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019079157A JP6736132B1 (ja) | 2019-04-18 | 2019-04-18 | パワー半導体モジュール |
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---|---|---|---|
JP2019079157A JP6736132B1 (ja) | 2019-04-18 | 2019-04-18 | パワー半導体モジュール |
Publications (2)
Publication Number | Publication Date |
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JP6736132B1 true JP6736132B1 (ja) | 2020-08-05 |
JP2020178032A JP2020178032A (ja) | 2020-10-29 |
Family
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JP2019079157A Active JP6736132B1 (ja) | 2019-04-18 | 2019-04-18 | パワー半導体モジュール |
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JP (1) | JP6736132B1 (ja) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3020481B1 (ja) * | 1998-10-08 | 2000-03-15 | 大衆電腦股▲ふん▼有限公司 | 多チップ半導体パッケージ構造とその製造方法 |
JP3985148B2 (ja) * | 2001-08-16 | 2007-10-03 | 信越化学工業株式会社 | 液状エポキシ樹脂組成物及び半導体装置 |
JP4039196B2 (ja) * | 2002-10-07 | 2008-01-30 | 富士電機機器制御株式会社 | 半導体モジュールの製造方法 |
JP2007073611A (ja) * | 2005-09-05 | 2007-03-22 | Renesas Technology Corp | 電子装置およびその製造方法 |
JP2013258387A (ja) * | 2012-05-15 | 2013-12-26 | Rohm Co Ltd | パワーモジュール半導体装置 |
JP6833986B2 (ja) * | 2017-05-11 | 2021-02-24 | 三菱電機株式会社 | パワーモジュール、電力変換装置、およびパワーモジュールの製造方法 |
JP7026451B2 (ja) * | 2017-05-11 | 2022-02-28 | 三菱電機株式会社 | パワー半導体モジュール及びその製造方法並びに電力変換装置 |
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2019
- 2019-04-18 JP JP2019079157A patent/JP6736132B1/ja active Active
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JP2020178032A (ja) | 2020-10-29 |
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