JP6713377B2 - 研磨ヘッド、研磨ヘッドを有するcmp研磨装置およびそれを用いた半導体集積回路装置の製造方法 - Google Patents
研磨ヘッド、研磨ヘッドを有するcmp研磨装置およびそれを用いた半導体集積回路装置の製造方法 Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims description 84
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 title description 12
- 239000006185 dispersion Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 17
- 230000035939 shock Effects 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
- B24B41/047—Grinding heads for working on plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
また、エアーバッグを加圧する際にウェハ領域を細分化して分圧する方法で研磨の均一化を促進する方法がある(例えば、特許文献2参照)。
1.エアーバッグの下に金属やセラミックからなる応力分散板を配置し、応力分散板と下方のウェハとの間に衝撃吸収シートを設ける。
2.応力分散板を積層体とする。
3.応力分散板の表面を球面形状とする。
図1は、本発明の第1の実施例を示す模式断面図であり、特にCMP研磨装置のヘッド部分の断面構造を模式的に示している。前述したように、図9に示す従来技術においては、エアーバッグに圧縮エアーが導入されると、エアーバッグの外周部である高加圧領域6に局所的にエアーの高圧力がかかり、中心部より圧力が高くなる。高加圧領域6に上から押さえられたウェハ1は圧力の強い領域の被研磨材料(例えば絶縁膜)の研磨レートが増大し、上から押さえつける圧力の小さい中央部よりよく削れ、平坦化後のウェハ1における高加圧領域6に位置する被研磨材料の面内の均一性が悪化してしまっていた。
2 トップリング
3 リテナーリング
4 エアーバッグ
5 研磨パッド
6、X 高加圧領域
8 エアー流出入口
101、201、301、401、501、601、701 応力分散板
102 衝撃吸収シート
Claims (13)
- CMP研磨装置の研磨ヘッドであって、
研磨パッドと、
前記研磨パッドの表面に載置されたウェハの裏面方向から前記ウェハの表面を前記研磨パッドに押し付けるエアーバッグと、
前記エアーバッグの側面を囲うリテナーリングと、
前記エアーバッグと前記ウェハと前記リテナーリングを囲うトップリングと、
前記エアーバッグと前記ウェハとの間に設けられた応力分散板と衝撃吸収シートを、
有し、
前記エアーバッグと当接する前記応力分散板の上面が球面形状を有することを特徴とする研磨ヘッド。 - 前記球面形状が凸球面形状であることを特徴とする請求項1記載の研磨ヘッド。
- 前記凸球面形状が前記エアーバッグのエアー流出入口下方に部分的に設けられていることを特徴とする請求項2記載の研磨ヘッド。
- 前記球面形状が凹球面形状であることを特徴とする請求項1記載の研磨ヘッド。
- 前記凹球面形状が前記エアーバッグのエアー流出入口下方に部分的に設けられていることを特徴とする請求項4記載の研磨ヘッド。
- CMP研磨装置の研磨ヘッドであって、
研磨パッドと、
前記研磨パッドの表面に載置されたウェハの裏面方向から前記ウェハの表面を前記研磨パッドに押し付けるエアーバッグと、
前記エアーバッグの側面を囲うリテナーリングと、
前記エアーバッグと前記ウェハと前記リテナーリングを囲うトップリングと、
前記エアーバッグと前記ウェハとの間に設けられた応力分散板と衝撃吸収シートを、
有し、
前記衝撃吸収シートと当接する前記応力分散板の下面が球面形状を有することを特徴とする研磨ヘッド。 - 前記球面形状が凸球面形状であることを特徴とする請求項6記載の研磨ヘッド。
- 前記球面形状が凹球面形状であることを特徴とする請求項6記載の研磨ヘッド。
- 前記凹球面形状が前記エアーバッグのエアー流出入口下方に部分的に設けられていることを特徴とする請求項8記載の研磨ヘッド。
- 前記応力分散板が金属、セラミックのいずれか一つ、または2つ以上の複合膜からなることを特徴とする請求項1乃至9のいずれか1項記載の研磨ヘッド。
- 前記複合膜は、ヤング率の異なる複数の素材の積層体であって、相対的にヤング率の小さい素材が前記エアーバッグと接することを特徴とする請求項10記載の研磨ヘッド。
- 請求項1乃至11のいずれか1項記載の研磨ヘッドを有するCMP研磨装置。
- 請求項12記載のCMP研磨装置を用いてウェハ表面を平坦化する工程を有する半導体集積回路装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016157371A JP6713377B2 (ja) | 2016-08-10 | 2016-08-10 | 研磨ヘッド、研磨ヘッドを有するcmp研磨装置およびそれを用いた半導体集積回路装置の製造方法 |
KR1020170099002A KR102366241B1 (ko) | 2016-08-10 | 2017-08-04 | 연마 헤드, 연마 헤드를 갖는 cmp 연마 장치 및 cmp 연마 장치를 이용한 반도체 집적회로 장치의 제조 방법 |
US15/670,504 US10300577B2 (en) | 2016-08-10 | 2017-08-07 | Polishing head, CMP apparatus including a polishing head, and manufacturing method of semiconductor integrated circuit device using a CMP apparatus |
TW106126866A TWI730154B (zh) | 2016-08-10 | 2017-08-09 | 研磨頭、具有研磨頭的cmp研磨裝置以及使用該cmp研磨裝置的半導體積體電路裝置的製造方法 |
CN201710679978.9A CN107717719B (zh) | 2016-08-10 | 2017-08-10 | 研磨头、cmp研磨装置、和半导体集成电路装置的制造方法 |
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JP2016157371A JP6713377B2 (ja) | 2016-08-10 | 2016-08-10 | 研磨ヘッド、研磨ヘッドを有するcmp研磨装置およびそれを用いた半導体集積回路装置の製造方法 |
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JP2018026453A JP2018026453A (ja) | 2018-02-15 |
JP2018026453A5 JP2018026453A5 (ja) | 2019-07-11 |
JP6713377B2 true JP6713377B2 (ja) | 2020-06-24 |
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US (1) | US10300577B2 (ja) |
JP (1) | JP6713377B2 (ja) |
KR (1) | KR102366241B1 (ja) |
CN (1) | CN107717719B (ja) |
TW (1) | TWI730154B (ja) |
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JP7158223B2 (ja) * | 2018-09-20 | 2022-10-21 | 株式会社荏原製作所 | 研磨ヘッドおよび研磨装置 |
CN111168561B (zh) * | 2019-12-26 | 2022-05-13 | 西安奕斯伟材料科技有限公司 | 研磨头及晶圆研磨装置 |
KR102304948B1 (ko) * | 2020-01-13 | 2021-09-24 | (주)제이쓰리 | 반도체 웨이퍼 형상을 제어하는 웨이퍼 가공용 헤드 장치 |
CN111993268A (zh) * | 2020-08-24 | 2020-11-27 | 台州市老林装饰有限公司 | 一种晶圆研磨头装置 |
CN112677047A (zh) * | 2020-12-09 | 2021-04-20 | 杭州蒙托机械科技有限公司 | 一种避免摇晃且能够吹散灰尘的小型抛光头保护装置 |
CN115673908B (zh) * | 2023-01-03 | 2023-03-10 | 北京特思迪半导体设备有限公司 | 一种半导体基材抛光设备中晶圆压头及其设计方法 |
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JP4718107B2 (ja) * | 2003-05-20 | 2011-07-06 | 株式会社荏原製作所 | 基板保持装置及び研磨装置 |
JP4086722B2 (ja) * | 2003-06-24 | 2008-05-14 | 株式会社荏原製作所 | 基板保持装置及び研磨装置 |
JP2005268566A (ja) | 2004-03-19 | 2005-09-29 | Ebara Corp | 化学機械研磨装置の基板把持機構のヘッド構造 |
JP2007005463A (ja) | 2005-06-22 | 2007-01-11 | Tokyo Seimitsu Co Ltd | 研磨装置及び研磨方法 |
CN102172868B (zh) * | 2011-02-16 | 2012-11-14 | 厦门大学 | 气浮式大口径平面光学元件抛光夹具 |
US8545289B2 (en) * | 2011-04-13 | 2013-10-01 | Nanya Technology Corporation | Distance monitoring device |
US20150308886A1 (en) * | 2012-08-31 | 2015-10-29 | Shinko Denshi Co., Ltd. | Platform scale provided with enclosure |
JP6338946B2 (ja) * | 2014-06-30 | 2018-06-06 | 東芝メモリ株式会社 | 研磨装置、及び研磨方法 |
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2016
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2017
- 2017-08-04 KR KR1020170099002A patent/KR102366241B1/ko active IP Right Grant
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KR20180018356A (ko) | 2018-02-21 |
TWI730154B (zh) | 2021-06-11 |
CN107717719B (zh) | 2021-03-12 |
KR102366241B1 (ko) | 2022-02-22 |
CN107717719A (zh) | 2018-02-23 |
TW201805109A (zh) | 2018-02-16 |
US10300577B2 (en) | 2019-05-28 |
US20180043496A1 (en) | 2018-02-15 |
JP2018026453A (ja) | 2018-02-15 |
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