JP6713106B2 - 鉛フリーはんだ合金、はんだ材料及び接合構造体 - Google Patents
鉛フリーはんだ合金、はんだ材料及び接合構造体 Download PDFInfo
- Publication number
- JP6713106B2 JP6713106B2 JP2016504153A JP2016504153A JP6713106B2 JP 6713106 B2 JP6713106 B2 JP 6713106B2 JP 2016504153 A JP2016504153 A JP 2016504153A JP 2016504153 A JP2016504153 A JP 2016504153A JP 6713106 B2 JP6713106 B2 JP 6713106B2
- Authority
- JP
- Japan
- Prior art keywords
- mass
- solder alloy
- solder
- lead
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910000679 solder Inorganic materials 0.000 title claims description 130
- 229910045601 alloy Inorganic materials 0.000 title claims description 75
- 239000000956 alloy Substances 0.000 title claims description 75
- 239000000463 material Substances 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 15
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 230000004907 flux Effects 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000010949 copper Substances 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 238000002844 melting Methods 0.000 description 12
- 230000008018 melting Effects 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 11
- 238000012360 testing method Methods 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010944 silver (metal) Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229910017980 Ag—Sn Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000001636 atomic emission spectroscopy Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
- C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13311—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/1354—Coating
- H01L2224/13599—Material
- H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13611—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/1354—Coating
- H01L2224/13599—Material
- H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/1362—Antimony [Sb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/1354—Coating
- H01L2224/13599—Material
- H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13639—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/1354—Coating
- H01L2224/13599—Material
- H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/1354—Coating
- H01L2224/13599—Material
- H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13655—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/1354—Coating
- H01L2224/13599—Material
- H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13657—Cobalt [Co] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81447—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Description
一方、実装基板及び配線の微細化に伴い、部品の微小化も進み、その結果、はんだ接合部の微小化も進んでいる。
しかし、特許文献2及び3に記載のはんだ合金では、エレクトロマイグレーションを抑制する効果が不十分である。
尚、本実施形態において残部とはSb以外の成分を意味する。
本実施形態のはんだ合金はSnを主成分とする鉛フリーはんだ合金である。
かかるSnを主成分とするはんだ合金において、Sbを前記範囲含むことにより、はんだ合金をはんだ接合に用いた場合に、エレクトロマイグレーションを十分に抑制することができる。
尚、本実施形態において、3.0質量%超とは、3.0質量%よりも大きい質量%を意味する。以下、「超」は同様の意味で用いられる。
前記範囲の固相線温度及び液相線温度であることで、エレクトロマイグレーションを抑制しつつ、はんだ合金の流動性を適切な範囲に維持でき、且つはんだ接合後の溶融を抑制することができる。
本実施形態のはんだ合金は溶融温度が前記範囲であることで、エレクトロマイグレーションを抑制しつつ、はんだ合金の流動性を適切な範囲に維持でき、且つはんだ接合後の溶融を抑制することができる。
これらの金属をさらに含むことで、よりエレクトロマイグレーションを抑制できる。
また、Ag、Cu、Ni、Co及びGeの総量は、残部のうちの0.001質量%以上5.1質量%以下、好ましくは、0.5質量%以上4.0質量%以下である。
本実施形態のはんだ合金は、Snを84.4質量%以上97.0質量%以下含んでいてもよい。
本実施形態のはんだ合金は、Agを0.1質量%以上4.5質量%以下、好ましくは1.0質量%以上3.5質量%以下含んでいてもよい。
Agを前記範囲含むことで、よりエレクトロマイグレーションを抑制できる。
本実施形態のはんだ合金が、Niを含む場合には、0.01質量%以上0.1質量%以下、好ましくは0.03質量%以上0.07質量%以下含んでいてもよい。
本実施形態のはんだ合金は、Coを含む場合には、0.01質量%以上0.1質量%以下、好ましくは0.03質量%以上0.07質量%以下含んでいてもよい。
本実施形態のはんだ合金は、Geを含む場合には、0.001質量%以上0.1質量%以下、好ましくは0.005質量%以上0.01質量%以下含んでいてもよい。
尚、Ni、Co、Geの合計の含有量としては、0質量%超0.1質量%以下であってもよい。
この場合、Ni、Co、Geの合計の含有量とは、Ni、Co及びGeからなる群から選択される少なくとも一種の金属の合計量を意味し、一種のみの場合にはその金属の含有量を意味する。
Cu、Ni、Co、Geを前記範囲含むことで、よりエレクトロマイグレーションを抑制できる。
この場合、残部はSn100質量%である。
この場合、残部は、Snが84.69質量%以上96.999質量%以下、Ag、Cu、Ni、Co及びGeからなる群から選択される少なくとも一種の金属の合計量が3.001質量%以上15.31質量%以下である。
この場合には、本実施形態のはんだ合金の一例としては、Sbを3.0質量%超10質量%以下と、残部としてのSn及び不可避不純物とからなる鉛フリーはんだ合金である。
また、本実施形態のはんだ合金の他の一例としては、Sbを3.0質量%超10質量%以下含み、残部がSnと、Ag、Cu、Ni、Co及びGeからなる群から選択される少なくとも一種の金属と不可避不純物とからなる鉛フリーはんだ合金である。
本実施形態のはんだ材料は、前記鉛フリーはんだ合金と、フラックスとを含むはんだ材料である。
本実施形態のはんだ接合体は、電極を有する基板と半導体素子とがはんだ接合部を介して接合された接合構造体であって、前記はんだ接合部は、前述の本実施形態の鉛フリーはんだ合金を含んでいる。
フリップチップ実装によって形成された半導体パッケージは、半導体素子の下面にはんだバンプを形成し、基板上の電極とはんだ接合によって接続するもので、リード線を半導体素子の横に引き出す必要がなく、半導体素子のサイズに近い微小な半導体パッケージを得ることができる。
一方、かかる接合構造体におけるはんだ接合部は、極めて微小なサイズになるため、高密度電流が流れやすくエレクトロマイグレーションが発生しやすくなる。
さらに、かかる接合構造体のはんだ接合部は、接合構造体をさらにマザーボードとなる基板に実装する際にも熱にさらされることになるため、一度半導体素子を実装した後には容易に溶融しないことが要求される。
よって、本発明によれば、はんだ接合部におけるエレクトロマイグレーションの発生を十分に抑制しうる鉛フリーはんだ合金、はんだ材料及び接合構造体を提供することができる。
表1に記載の組成の各はんだ合金を準備した。
図1にエレクトロマイグレーション耐性を測定するためのテストピースの概略を示す。
テストピース(試験片)は、銅電極の間に、こて先200μmのはんだこて(UNIX−JBC、ジャパンユニックス社製)を用いて各はんだ合金をはんだ付けすることで作製した。はんだ接合部の厚みは9μmになるように調整した。
また、銅電極表面は#2000の耐水研磨紙を用いて研磨してから、#4000の耐水研磨紙を用いて仕上げ研磨した。
各テストピースを用いて、図2に示す装置でエレクトロマイグレーションを測定した。測定方法は、銅電極にプローブを接触させて、平均電流密度50kA/cm2で通電して電圧値を測定した。テストピースは、セラミックヒータ上に載置して60℃に加熱しながら通電した。
電圧値が測定不能になった時間を破断時間として表1に示す。
また、同様の測定方法で、実施例1,4及び比較例1について平均電流密度100kA/cm2で、200kA/cm2で通電して電圧値を測定し、電圧値が測定不能になった時間を破断時間として表2に示す。
さらに、実施例4及び比較例1については平均電流密度10kA/cm2で通電して電圧値を測定し、電圧値が測定不能になった時間を破断時間として表2に示す。
各はんだ合金の溶融性能を測定した。
各はんだ合金の固相線温度及び液相線温度を示差走査熱量測定 (Differential scanning calorimetry;DSC法)で昇温速度10K/minにて測定した。
結果を表1に示す。
また、実施例は固相線温度が230℃以上であり且つ液相線温度が240℃であった。すなわち、実施例では溶融性能が適切な範囲に調整されていた。
以上より、各実施例では、幅広い電流密度の範囲において確実にエレクトロマイグレーションの発生が抑制されていたことが明らかである。
Claims (5)
- Sb:3.0質量%超10質量%以下、
Ag:0.1質量%以上4.5質量%以下、
Cu:0質量%以上1.2質量%以下、
Ni:0質量%以上0.1質量%以下、
Co:0質量%以上0.1質量%以下、
Ge:0.001質量%以上0.1質量%以下、並びに、
残部:Sn及び不可避的不純物、
からなり、
前記Ni、Co及びGeを合計で0質量%超0.1質量%以下含む鉛フリーはんだ合金。 - 前記Agを0.1質量%以上4.0質量%以下含む請求項1に記載の鉛フリーはんだ合金。
- 前記Cuを0.1質量%以上1.0質量%以下含む請求項1又は2に記載の鉛フリーはんだ合金。
- 請求項1乃至3のいずれか一項に記載の鉛フリーはんだ合金と、フラックスとを含むはんだ材料。
- 電極を有する基板と半導体素子とがはんだ接合部を介して接合された接合構造体であって、前記はんだ接合部は、請求項1乃至4のいずれか一項に記載の鉛フリーはんだ合金からなる接合構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014033234 | 2014-02-24 | ||
JP2014033234 | 2014-02-24 | ||
PCT/JP2015/054581 WO2015125855A1 (ja) | 2014-02-24 | 2015-02-19 | 鉛フリーはんだ合金、はんだ材料及び接合構造体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015125855A1 JPWO2015125855A1 (ja) | 2017-03-30 |
JP6713106B2 true JP6713106B2 (ja) | 2020-06-24 |
Family
ID=53878354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016504153A Active JP6713106B2 (ja) | 2014-02-24 | 2015-02-19 | 鉛フリーはんだ合金、はんだ材料及び接合構造体 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9764430B2 (ja) |
EP (1) | EP3112080A4 (ja) |
JP (1) | JP6713106B2 (ja) |
CN (1) | CN106061669A (ja) |
WO (1) | WO2015125855A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3321025B1 (en) | 2016-03-22 | 2020-11-25 | Tamura Corporation | Lead-free solder alloy, flux composition, solder paste composition, electronic circuit board and electronic control device |
JP6275178B2 (ja) * | 2016-03-22 | 2018-02-07 | 株式会社タムラ製作所 | 鉛フリーはんだ合金、電子回路基板および電子制御装置 |
WO2017217145A1 (ja) * | 2016-06-16 | 2017-12-21 | 富士電機株式会社 | はんだ接合部 |
CN109641323B (zh) * | 2017-03-17 | 2022-02-08 | 富士电机株式会社 | 软钎焊材料 |
US10456872B2 (en) | 2017-09-08 | 2019-10-29 | Tamura Corporation | Lead-free solder alloy, electronic circuit substrate, and electronic device |
CA3054395A1 (en) * | 2017-09-14 | 2019-03-21 | Tamura Corporation | Lead-free solder alloy, electronic circuit substrate, and electronic control device |
JP6292342B1 (ja) * | 2017-09-20 | 2018-03-14 | 千住金属工業株式会社 | Cu管及び/又はFe管接合用はんだ合金、プリフォームはんだ、やに入りはんだおよびはんだ継手 |
EP4075452A4 (en) | 2019-12-10 | 2022-11-23 | Asahi Kasei Kabushiki Kaisha | CONDUCTIVE FILM AND WRAPPED BODY THEREOF |
CN111843279A (zh) * | 2020-07-22 | 2020-10-30 | 昆山市宏嘉焊锡制造有限公司 | 一种高温抗氧化的SnSbCu无铅焊料 |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS527422B2 (ja) * | 1972-08-19 | 1977-03-02 | ||
JPS526468A (en) * | 1975-07-04 | 1977-01-18 | Sumitomo Metal Mining Co Ltd | Brazing material |
JPS5461050A (en) * | 1977-10-24 | 1979-05-17 | Nippon Almit Kk | Metal brazing alloy |
JPS6186091A (ja) * | 1984-10-03 | 1986-05-01 | Furukawa Electric Co Ltd:The | Sn−Sb系合金はんだ |
JPS6188996A (ja) * | 1984-10-05 | 1986-05-07 | Furukawa Electric Co Ltd:The | Sn−Sb系合金はんだ |
JP2669825B2 (ja) | 1987-07-03 | 1997-10-29 | 東芝エンジニアリング株式会社 | バルブ施錠装置 |
JPH0416897A (ja) | 1990-05-10 | 1992-01-21 | Mitsubishi Electric Corp | マルチウインド表示方式 |
JP3027441B2 (ja) * | 1991-07-08 | 2000-04-04 | 千住金属工業株式会社 | 高温はんだ |
US5405577A (en) * | 1993-04-29 | 1995-04-11 | Seelig; Karl F. | Lead-free and bismuth-free tin alloy solder composition |
JPH07284983A (ja) * | 1994-04-20 | 1995-10-31 | Tanaka Denshi Kogyo Kk | 半田材料及びその製造方法 |
JPH08174276A (ja) * | 1994-12-21 | 1996-07-09 | Tanaka Denshi Kogyo Kk | 複合半田材料及びその製造方法 |
JP3353662B2 (ja) * | 1997-08-07 | 2002-12-03 | 富士電機株式会社 | はんだ合金 |
JP3353640B2 (ja) * | 1997-04-16 | 2002-12-03 | 富士電機株式会社 | はんだ合金 |
US6179935B1 (en) * | 1997-04-16 | 2001-01-30 | Fuji Electric Co., Ltd. | Solder alloys |
JP3815865B2 (ja) * | 1997-09-02 | 2006-08-30 | 千住金属工業株式会社 | 鉛フリーはんだ合金 |
JPH11291083A (ja) * | 1998-04-14 | 1999-10-26 | Murata Mfg Co Ltd | 半田合金 |
JP2001244622A (ja) * | 2000-03-01 | 2001-09-07 | Hitachi Ltd | 電子回路装置 |
US6784086B2 (en) * | 2001-02-08 | 2004-08-31 | International Business Machines Corporation | Lead-free solder structure and method for high fatigue life |
TW592872B (en) * | 2001-06-28 | 2004-06-21 | Senju Metal Industry Co | Lead-free solder alloy |
JP3700668B2 (ja) * | 2002-03-27 | 2005-09-28 | 株式会社村田製作所 | 半田および半田付け物品 |
JP4016897B2 (ja) | 2003-06-27 | 2007-12-05 | トヨタ自動車株式会社 | 蓄電装置の充放電制御装置および自動車 |
TW200603932A (en) * | 2004-03-19 | 2006-02-01 | Senju Metal Industry Co | Lead free solder fall |
JP4635715B2 (ja) * | 2005-05-20 | 2011-02-23 | 富士電機システムズ株式会社 | はんだ合金およびそれを用いた半導体装置 |
JP2008221330A (ja) * | 2007-03-16 | 2008-09-25 | Fuji Electric Holdings Co Ltd | はんだ合金 |
WO2010047139A1 (ja) * | 2008-10-24 | 2010-04-29 | 三菱電機株式会社 | はんだ合金および半導体装置 |
JP4554713B2 (ja) * | 2009-01-27 | 2010-09-29 | 株式会社日本フィラーメタルズ | 無鉛はんだ合金及び該はんだ合金を含む耐疲労性はんだ接合材並びに該接合材を使用した接合体 |
JP5584427B2 (ja) * | 2009-04-14 | 2014-09-03 | 新日鉄住金マテリアルズ株式会社 | 無鉛ハンダ合金、ハンダボール及びハンダバンプを有する電子部材 |
JP5240938B2 (ja) * | 2009-06-25 | 2013-07-17 | 三井金属鉱業株式会社 | Sn−Sb系半田合金 |
JP5463845B2 (ja) * | 2009-10-15 | 2014-04-09 | 三菱電機株式会社 | 電力半導体装置とその製造方法 |
JP5486281B2 (ja) * | 2009-12-08 | 2014-05-07 | 荒川化学工業株式会社 | はんだペースト |
JP5486282B2 (ja) * | 2009-12-08 | 2014-05-07 | 荒川化学工業株式会社 | はんだペースト用フラックス及びはんだペースト |
JP2011138968A (ja) * | 2009-12-28 | 2011-07-14 | Senju Metal Ind Co Ltd | 面実装部品のはんだ付け方法および面実装部品 |
JP5553181B2 (ja) * | 2010-06-01 | 2014-07-16 | 千住金属工業株式会社 | 無洗浄鉛フリーソルダペースト |
JP5756933B2 (ja) * | 2010-09-29 | 2015-07-29 | 株式会社弘輝 | フラックス |
WO2012077228A1 (ja) * | 2010-12-10 | 2012-06-14 | 三菱電機株式会社 | 無鉛はんだ合金、半導体装置、および半導体装置の製造方法 |
JP6165411B2 (ja) | 2011-12-26 | 2017-07-19 | 富士通株式会社 | 電子部品及び電子機器 |
JP5545316B2 (ja) | 2012-04-11 | 2014-07-09 | 大日本印刷株式会社 | 印画物作製装置及び印画物作製方法 |
JP2013252548A (ja) | 2012-06-08 | 2013-12-19 | Nihon Almit Co Ltd | 微細部品接合用のソルダペースト |
JP5893528B2 (ja) | 2012-07-27 | 2016-03-23 | 新日鉄住金マテリアルズ株式会社 | 無鉛はんだバンプ接合構造 |
JP2014157858A (ja) * | 2013-02-14 | 2014-08-28 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
-
2015
- 2015-02-19 CN CN201580009860.4A patent/CN106061669A/zh active Pending
- 2015-02-19 US US15/120,937 patent/US9764430B2/en active Active
- 2015-02-19 EP EP15752620.3A patent/EP3112080A4/en not_active Withdrawn
- 2015-02-19 JP JP2016504153A patent/JP6713106B2/ja active Active
- 2015-02-19 WO PCT/JP2015/054581 patent/WO2015125855A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP3112080A1 (en) | 2017-01-04 |
JPWO2015125855A1 (ja) | 2017-03-30 |
US9764430B2 (en) | 2017-09-19 |
US20160368104A1 (en) | 2016-12-22 |
EP3112080A4 (en) | 2017-11-29 |
CN106061669A (zh) | 2016-10-26 |
WO2015125855A1 (ja) | 2015-08-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6713106B2 (ja) | 鉛フリーはんだ合金、はんだ材料及び接合構造体 | |
JP6842500B2 (ja) | 無鉛ソルダーペースト及びその製造方法 | |
JP5664664B2 (ja) | 接合方法、電子装置の製造方法、および電子部品 | |
KR101332532B1 (ko) | 전자 장치의 제조 방법, 전자 부품 탑재용 기판 및 반도체 소자 탑재용 기판의 제조 방법 | |
JP6828880B2 (ja) | はんだペースト、はんだ合金粉 | |
JP2014008523A (ja) | はんだ合金、ソルダペーストおよび電子回路基板 | |
WO2013132942A1 (ja) | 接合方法、接合構造体およびその製造方法 | |
JP6387522B2 (ja) | 実装構造体 | |
JP6060199B2 (ja) | はんだ合金、ソルダペーストおよび電子回路基板 | |
JP2007268569A (ja) | 粉末はんだ材料および接合材料 | |
JP4975342B2 (ja) | 導電性接着剤 | |
WO2019069788A1 (ja) | はんだ合金、はんだ接合材料及び電子回路基板 | |
KR102342394B1 (ko) | 땜납 합금, 땜납 페이스트, 프리폼 땜납, 땜납 볼, 선 땜납, 수지 플럭스 코어드 땜납, 땜납 이음매, 전자 회로 기판 및 다층 전자 회로 기판 | |
JP3782743B2 (ja) | ハンダ用組成物、ハンダ付け方法および電子部品 | |
JP5051633B2 (ja) | はんだ合金 | |
JP6969070B2 (ja) | はんだ材料、はんだペースト、フォームはんだ及びはんだ継手 | |
JP2004122223A (ja) | 電子部品および電子部品の製造方法 | |
JP2020142300A (ja) | 成形はんだおよびその製造方法、並びにはんだ接合方法 | |
JP7068370B2 (ja) | はんだ合金、はんだボールおよびはんだ継手 | |
JP5941036B2 (ja) | 面実装部品のはんだ付け方法および面実装部品 | |
JP2008091801A (ja) | 半導体装置およびその製造方法 | |
JP2004114124A (ja) | 電子部品および電子部品の製造方法 | |
KR20170097283A (ko) | 무연 솔더 합금 조성물 및 그의 제조 방법 | |
TW201634167A (zh) | 焊膏 | |
JP2015159318A (ja) | 面実装部品のはんだ付け方法および面実装部品 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180117 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20180615 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190118 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190318 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190816 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191015 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200313 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200409 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6713106 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |