JP6710130B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP6710130B2 JP6710130B2 JP2016178929A JP2016178929A JP6710130B2 JP 6710130 B2 JP6710130 B2 JP 6710130B2 JP 2016178929 A JP2016178929 A JP 2016178929A JP 2016178929 A JP2016178929 A JP 2016178929A JP 6710130 B2 JP6710130 B2 JP 6710130B2
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- 239000000758 substrate Substances 0.000 title claims description 101
- 230000007246 mechanism Effects 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 122
- 235000012431 wafers Nutrition 0.000 description 37
- 238000000034 method Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 238000010926 purge Methods 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000003672 processing method Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011553 magnetic fluid Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- Chemical & Material Sciences (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
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- Automation & Control Theory (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
(基板処理装置)
本発明の第1実施形態に係る基板処理装置について説明する。図1は、第1実施形態に係る基板処理装置の概略図である。図2は、図1の基板処理装置の処理容器を説明するための横断面図である。図3は、図1の基板処理装置の内管の一例を説明するための斜視図である。図4は、図1の基板処理装置の可動壁の一例を説明するための斜視図である。
上述の基板処理装置1を使用した基板処理方法の一例について、図8に基づき説明する。図8は、第1実施形態に係る基板処理方法を説明するための図である。
本発明の第2実施形態に係る基板処理装置について説明する。図9は、第2実施形態に係る基板処理装置の概略図である。図10は、図9の基板処理装置の内管の一例を説明するための斜視図である。図11は、図9の基板処理装置の可動壁の一例を説明するための図である。
本発明の第3実施形態に係る基板処理装置について説明する。図13は、第3実施形態に係る基板処理装置の可動壁の一例を説明するための図である。
共通開口部CAの形状を変化させたときの、ウエハWの表面に形成される膜の膜厚の面間均一性について説明する。図15は、面間均一性を説明するための図である。図15(a)は、第1の開口部の形状を説明するための図である。図15(b)は、ウエハWの位置とウエハWに形成されたシリコン酸化膜の膜厚との関係を示している。図15(b)において、横軸はウエハWの位置を示し、縦軸はウエハWの表面に形成されたシリコン酸化膜の膜厚(nm)を示している。また、図15(b)中、「TOP」は処理容器の上方側の位置を示し、「CTR」は処理容器の中央部の位置を示し、「BTM」は処理容器の下方側の位置を示している。また、図15中、「T−C」は「TOP」と「CTR」との間の位置を示し、「C−B」は「CTR」と「BTM」との間の位置を示している。
41 排気手段
44 内管
46 外管
52 第1の開口部
76 ガスノズル
78 ガスノズル
80 ガスノズル
100 可動壁
102 第2の開口部
104 回転軸
106 モータ
110 制御手段
W ウエハ
Claims (10)
- 複数枚の基板を収容可能に設けられ、第1の開口部を有する内管と、
前記内管を取り囲む外管と、
前記内管の内部又は前記内管と前記外管との間に移動可能に設けられ、第2の開口部を有する可動壁と、
前記基板に処理ガスを供給するガス供給手段と、
前記可動壁よりも外側の位置に設けられ、前記基板に供給される前記処理ガスを排気する排気手段と、
を有し、
前記第1の開口部は、矩形状を有し、
前記第2の開口部は、矩形状を含まない平行四辺形状を有する、
基板処理装置。 - 前記可動壁を前記内管の周方向に沿って移動させる駆動機構と、
前記第1の開口部及び前記第2の開口部が重なることで形成される開口部の形状を変化させるように前記駆動機構の動作を制御する制御手段と、
を更に有する、
請求項1に記載の基板処理装置。 - 複数枚の基板を収容可能に設けられ、第1の開口部を有する内管と、
前記内管を取り囲む外管と、
前記内管の内部又は前記内管と前記外管との間に移動可能に設けられ、第2の開口部を有する可動壁と、
前記基板に処理ガスを供給するガス供給手段と、
前記可動壁よりも外側の位置に設けられ、前記基板に供給される前記処理ガスを排気する排気手段と、
を有し、
前記第1の開口部は、前記内管の長手方向に沿って第1の間隔をおいて設けられる複数の開口部を有し、
前記第2の開口部は、前記内管の長手方向に沿って第2の間隔をおいて設けられる複数の開口部を有し、
前記第1の間隔と前記第2の間隔とが異なる、
基板処理装置。 - 前記可動壁を前記内管の上下方向に沿って移動させる駆動機構と、
前記第1の開口部及び前記第2の開口部が重なることで形成される開口部の形状を変化させるように前記駆動機構の動作を制御する制御手段と、
を更に有する、
請求項3に記載の基板処理装置。 - 前記排気手段は、前記第1の開口部及び前記第2の開口部を介して前記基板に供給される前記処理ガスを排気する、
請求項1乃至4のいずれか一項に記載の基板処理装置。 - 前記可動壁は、前記内管の側壁に沿って設けられている、
請求項1乃至5のいずれか一項に記載の基板処理装置。 - 前記可動壁は、半円筒形状を有する、
請求項6に記載の基板処理装置。 - 前記可動壁は、円筒形状を有する、
請求項6に記載の基板処理装置。 - 前記第2の開口部は、前記第1の開口部とは異なる形状を有する、
請求項1乃至8のいずれか一項に記載の基板処理装置。 - 複数枚の基板を収容可能に設けられ、第1の開口部を有する内管と、
前記内管を取り囲む外管と、
前記内管の内部又は前記内管と前記外管との間に移動可能に設けられ、第2の開口部を有する可動壁と、
前記基板に処理ガスを供給するガス供給手段と、
前記可動壁よりも外側の位置に設けられ、前記基板に供給される前記処理ガスを排気する排気手段と、
を有し、
前記可動壁は、半円筒形状を有し、前記内管の側壁に沿って設けられている、
基板処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016178929A JP6710130B2 (ja) | 2016-09-13 | 2016-09-13 | 基板処理装置 |
US15/699,010 US10475641B2 (en) | 2016-09-13 | 2017-09-08 | Substrate processing apparatus |
TW106130920A TWI697955B (zh) | 2016-09-13 | 2017-09-11 | 基板處理裝置 |
KR1020170115990A KR102174107B1 (ko) | 2016-09-13 | 2017-09-11 | 기판 처리 장치 |
CN202110135975.5A CN112962084B (zh) | 2016-09-13 | 2017-09-13 | 基板处理装置 |
CN201710820931.XA CN107815667B (zh) | 2016-09-13 | 2017-09-13 | 基板处理装置 |
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JP2016178929A JP6710130B2 (ja) | 2016-09-13 | 2016-09-13 | 基板処理装置 |
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JP2018046114A JP2018046114A (ja) | 2018-03-22 |
JP6710130B2 true JP6710130B2 (ja) | 2020-06-17 |
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JP2016178929A Active JP6710130B2 (ja) | 2016-09-13 | 2016-09-13 | 基板処理装置 |
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US (1) | US10475641B2 (ja) |
JP (1) | JP6710130B2 (ja) |
KR (1) | KR102174107B1 (ja) |
CN (2) | CN112962084B (ja) |
TW (1) | TWI697955B (ja) |
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US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
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