JP6708643B2 - 表示装置の作製方法 - Google Patents
表示装置の作製方法 Download PDFInfo
- Publication number
- JP6708643B2 JP6708643B2 JP2017524137A JP2017524137A JP6708643B2 JP 6708643 B2 JP6708643 B2 JP 6708643B2 JP 2017524137 A JP2017524137 A JP 2017524137A JP 2017524137 A JP2017524137 A JP 2017524137A JP 6708643 B2 JP6708643 B2 JP 6708643B2
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- Prior art keywords
- insulating film
- transistor
- film
- conductive film
- substrate
- Prior art date
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- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000011245 gel electrolyte Substances 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920006350 polyacrylonitrile resin Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Optical Filters (AREA)
Description
本実施の形態では、本発明の一態様の表示装置とその作製方法について図1〜図23を用いて説明する。
図1に、図2(B)における走査線駆動回路150及び画素部160の断面図を示す。
図3〜図5を用いて、断面構成例1(図1)の作製方法の一例を説明する。
図6(A)、(B)に、図1とは異なる画素部の断面図を示す。断面構成例2は、トランジスタ163、164を有する点で、図1の構成と異なる。
図7に、図1とは異なる画素部の断面図を示す。
図8に、図1とは異なる走査線駆動回路150及び画素部160の断面図を示す。
図9(A)に、図1とは異なる画素部160の断面図を示す。
図10に、図1とは異なる走査線駆動回路150及び画素部160の断面図を示す。さらに、図10では、表示装置におけるFPC4018の接続部の断面図も示す。
図11に、図10とは異なる走査線駆動回路150及び画素部160の断面図を示す。断面構成例7は、トランジスタ154、167、168を有する点で、図10の構成と異なる。
図13に、図10とは異なる画素部160の断面図を示す。
図14に、図10とは異なる走査線駆動回路150及び画素部160の断面図を示す。
図15に、図10とは異なる走査線駆動回路150及び画素部160の断面図を示す。断面構成例10は、結晶性基板102及び絶縁膜111を有さず、可撓性基板901、接着層903、及び絶縁膜105を有する点で、図10の構成と異なる。
図16〜図18を用いて、断面構成例10の作製方法の一例を説明する。なお、断面構成例1の作製方法と同様の部分については、説明を省略する場合がある。
図19に、図1とは異なる画素部の断面図を示す。
図20に、画素回路の一例を示す回路図を示す。また、図21に図1とは異なる画素部の断面図を示す。
本発明の一態様では、タッチセンサが搭載された表示装置(以下、タッチパネルとも記す)を作製することができる。
本発明の一態様では、単色表示の表示装置を作製することができる。単色表示の表示装置は、例えば、実施の形態2で説明するプロジェクター等に用いることができる。なお、本発明の一態様は表示装置に限られず、単色発光の照明装置等に適用してもよい。
次に、本実施の形態の表示装置に用いることができる材料等を説明する。なお、本明細書中で先に説明した構成については説明を省略する場合がある。
本実施の形態では、本発明の一態様の電子機器及び照明装置について図24〜図30を用いて説明する。
本実施の形態では、リソグラフィー法で用いる露光装置の性能の一つである解像度の限界よりも微細なL/S(Line & Space)を有する配線又は電極の加工方法の一例について説明する。
102 結晶性基板
103 剥離層
105 絶縁膜
110 表示装置
111 絶縁膜
112n nウェル
112p pウェル
113n n型不純物領域
113p p型不純物領域
114n LDD領域
114p LDD領域
115 ゲート絶縁膜
116 ゲート
116a ゲート
116b ゲート
116c ゲート
116d ゲート
117 サイドウォール
118 素子分離領域
119 半導体膜
119a チャネル形成領域
119b 低抵抗領域
121 絶縁膜
121x 絶縁膜
121y 絶縁膜
122 絶縁膜
123 導電膜
123a 導電膜
123b 導電膜
123c 導電膜
123d 導電膜
123e 導電膜
123f 導電膜
123g 導電膜
123h 導電膜
123i 導電膜
123x 導電膜
123y 導電膜
124 導電膜
124a 導電膜
124b 導電膜
124c 導電膜
124d 導電膜
124e 導電膜
124f 導電膜
124g 導電膜
124h 導電膜
125 絶縁膜
126 導電膜
127 導電膜
128 絶縁膜
129e 導電膜
129f 導電膜
129g 導電膜
129h 導電膜
129i 導電膜
131 半導体膜
135 絶縁膜
136 バックゲート
141 導電膜
142 絶縁膜
143 絶縁膜
148 導電膜
149 導電膜
150 走査線駆動回路
151n トランジスタ
151p トランジスタ
152n トランジスタ
152p トランジスタ
153 トランジスタ
154 トランジスタ
155 トランジスタ
156 トランジスタ
160 画素部
161 トランジスタ
162 トランジスタ
163 トランジスタ
164 トランジスタ
165 トランジスタ
166 トランジスタ
167 トランジスタ
168 トランジスタ
169 トランジスタ
170 容量素子
171 可撓性基板
172 絶縁膜
173 導電膜
174 絶縁膜
175 導電膜
176 接着層
177 導電膜
178 接続体
179 FPC
180 発光素子
180G 発光素子
180R 発光素子
181 電極
183 EL層
185 電極
187 導電膜
189 導電膜
191 可撓性基板
192 接着層
193 絶縁膜
194 遮光層
195 着色層
195G 着色層
195R 着色層
196 接着層
197 絶縁膜
199 接続体
210 部材
215a 部材
215b 部材
250 液晶素子
251 導電膜
252 導電膜
253 絶縁膜
254 液晶
255 オーバーコート
256 スペーサ
257 ポリマー壁
258 配向膜
259 配向膜
305 基板
310 導電体
315 導電体
320 導電体
325 導電体
340 レジストマスク
350 絶縁体
355 絶縁体
401 ゲート
402 絶縁膜
403 ゲート絶縁膜
404a 導電膜
404b 導電膜
406a 酸化物膜
406b 酸化物半導体膜
406c 酸化物膜
408 絶縁膜
410 絶縁膜
418 絶縁膜
428 絶縁膜
454 ゲート
460 素子分離領域
462 ゲート絶縁膜
464 絶縁膜
465 絶縁膜
466 絶縁膜
467 絶縁膜
468 絶縁膜
469 絶縁膜
470 絶縁膜
472 絶縁膜
474a 不純物領域
474b 不純物領域
475 絶縁膜
476a 導電膜
476b 導電膜
476c 導電膜
477a 導電膜
477b 導電膜
477c 導電膜
478a 導電膜
478b 導電膜
478c 導電膜
479a 導電膜
479b 導電膜
479c 導電膜
480a 導電膜
480b 導電膜
480c 導電膜
483a 導電膜
483b 導電膜
483c 導電膜
483d 導電膜
483e 導電膜
483f 導電膜
484a 導電膜
484b 導電膜
484c 導電膜
484d 導電膜
485a 導電膜
485b 導電膜
485c 導電膜
485d 導電膜
485e 導電膜
487a 導電膜
487b 導電膜
487c 導電膜
488a 導電膜
488b 導電膜
488c 導電膜
489a 導電膜
489b 導電膜
490a 導電膜
490b 導電膜
491 導電膜
494 導電膜
496 導電膜
498 絶縁膜
747x 開口
747y 開口
748x 開口
748y 開口
901 可撓性基板
903 接着層
911 作製基板
912 剥離層
951 結晶性基板
992 剥離層
3001 第1の配線
3002 第2の配線
3003 第3の配線
3004 第4の配線
3005 第5の配線
3200 トランジスタ
3300 トランジスタ
3400 容量素子
4003 信号線駆動回路
4004 走査線駆動回路
4018 FPC
4018a FPC
4018b FPC
7000 表示部
7001 表示部
7100 携帯電話機
7101 筐体
7103 操作ボタン
7104 外部接続ポート
7105 スピーカ
7106 マイク
7200 テレビジョン装置
7201 筐体
7203 スタンド
7211 リモコン操作機
7300 携帯情報端末
7301 筐体
7302 操作ボタン
7303 情報
7304 情報
7305 情報
7306 情報
7310 携帯情報端末
7320 携帯情報端末
7400 照明装置
7401 台部
7402 発光部
7403 操作スイッチ
7410 照明装置
7412 発光部
7420 照明装置
7422 発光部
7500 携帯情報端末
7501 筐体
7502 部材
7503 操作ボタン
7600 携帯情報端末
7601 筐体
7602 ヒンジ
7650 携帯情報端末
7651 非表示部
7700 携帯情報端末
7701 筐体
7703a ボタン
7703b ボタン
7704a スピーカ
7704b スピーカ
7705 外部接続ポート
7706 マイク
7709 バッテリ
7800 携帯情報端末
7801 バンド
7802 入出力端子
7803 操作ボタン
7804 アイコン
7805 バッテリ
7850 携帯情報端末
7851 表示部
7852 筐体
7853 筐体
7854 バンド
7855 操作ボタン
7900 ヘッドマウントディスプレイ
7901 表示装置
7902 本体
7903 装着部
7904 レンズ
7910 プロジェクター
7911 表示装置
7912 光学系
7913 スクリーン
7920 ヘッドマウントディスプレイ
7921L 表示装置
7921R 表示装置
7922 本体
7923 装着部
7924 レンズ
9700 自動車
9701 車体
9702 車輪
9703 ダッシュボード
9704 ライト
9710 表示部
9711 表示部
9712 表示部
9713 表示部
9714 表示部
9715 表示部
9721 表示部
9722 表示部
9723 表示部
9801 筐体
9802 筐体
9803 表示部
9804 表示部
9805 マイクロフォン
9806 スピーカ
9807 操作キー
9808 スタイラス
9821 筐体
9822 表示部
9823 キーボード
9824 ポインティングデバイス
Claims (6)
- チャネル形成領域を結晶性半導体基板に有するトランジスタを形成する工程と、
前記結晶性半導体基板上に前記トランジスタと電気的に接続される表示素子を形成する工程と、
前記結晶性半導体基板を研磨し、前記結晶性半導体基板に厚さ1μm以上100μm以下の部分を形成する工程と、を有し、
前記表示素子を形成する工程では、発光素子を形成し、
前記結晶性半導体基板を研磨する工程の前に、前記発光素子上に絶縁膜を形成する工程と、前記絶縁膜上に着色層を形成する工程と、を有し、
前記絶縁膜は、前記発光素子が発する光を透過する機能を有し、
前記発光素子は、前記着色層側に光を射出する機能を有する、表示装置の作製方法。 - チャネル形成領域を結晶性半導体基板に有するトランジスタを形成する工程と、
前記結晶性半導体基板上に前記トランジスタと電気的に接続される表示素子を形成する工程と、
前記結晶性半導体基板の一部が残るように前記結晶性半導体基板を研磨する工程と、を有する、表示装置の作製方法であって、
前記表示素子を形成する工程では、発光素子を形成し、
前記結晶性半導体基板を研磨する工程の前に、前記発光素子上に絶縁膜を形成する工程と、前記絶縁膜上に着色層を形成する工程と、を有し、
前記絶縁膜は、前記発光素子が発する光を透過する機能を有し、
前記発光素子は、前記着色層側に光を射出する機能を有し、
前記結晶性半導体基板を研磨した後の前記表示装置は可撓性を有する、表示装置の作製方法。 - チャネル形成領域を結晶性半導体基板に有するトランジスタを形成する工程と、
前記結晶性半導体基板上に前記トランジスタと電気的に接続される表示素子を形成する工程と、
前記結晶性半導体基板を研磨し、前記結晶性半導体基板に厚さ1μm以上100μm以下の部分を形成する工程と、を有し、
前記表示素子を形成する工程では、発光素子を形成し、
前記結晶性半導体基板を研磨する工程の前に、
作製基板上に剥離層を形成する工程と、
前記剥離層上に絶縁膜を形成する工程と、
前記絶縁膜上に着色層を形成する工程と、
前記発光素子と前記着色層とが互いに向き合うように、前記結晶性半導体基板と前記作製基板とを、第1の接着層を用いて貼り合わせる工程と、
前記作製基板と前記絶縁膜とを分離する工程と、
前記絶縁膜とフィルムとを、第2の接着層を用いて貼り合わせる工程と、を有し、
前記絶縁膜及び前記フィルムは、前記発光素子が発する光を透過する機能を有し、
前記発光素子は、前記着色層側に光を射出する機能を有する、表示装置の作製方法。 - チャネル形成領域を結晶性半導体基板に有するトランジスタを形成する工程と、
前記結晶性半導体基板上に前記トランジスタと電気的に接続される表示素子を形成する工程と、
前記結晶性半導体基板の一部が残るように前記結晶性半導体基板を研磨する工程と、を有する、表示装置の作製方法であって、
前記表示素子を形成する工程では、発光素子を形成し、
前記結晶性半導体基板を研磨する工程の前に、
作製基板上に剥離層を形成する工程と、
前記剥離層上に絶縁膜を形成する工程と、
前記絶縁膜上に着色層を形成する工程と、
前記発光素子と前記着色層とが互いに向き合うように、前記結晶性半導体基板と前記作製基板とを、第1の接着層を用いて貼り合わせる工程と、
前記作製基板と前記絶縁膜とを分離する工程と、
前記絶縁膜とフィルムとを、第2の接着層を用いて貼り合わせる工程と、を有し、
前記絶縁膜及び前記フィルムは、前記発光素子が発する光を透過する機能を有し、
前記発光素子は、前記着色層側に光を射出する機能を有し、
前記結晶性半導体基板を研磨した後の前記表示装置は可撓性を有する、表示装置の作製方法。 - 請求項1乃至請求項4のいずれか一において、
前記結晶性半導体基板は、単結晶半導体基板である、表示装置の作製方法。 - 請求項1乃至請求項4のいずれか一において、
前記結晶性半導体基板は、単結晶シリコンを有する、表示装置の作製方法。
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