JP6685870B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6685870B2 JP6685870B2 JP2016180129A JP2016180129A JP6685870B2 JP 6685870 B2 JP6685870 B2 JP 6685870B2 JP 2016180129 A JP2016180129 A JP 2016180129A JP 2016180129 A JP2016180129 A JP 2016180129A JP 6685870 B2 JP6685870 B2 JP 6685870B2
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- 239000004065 semiconductor Substances 0.000 title claims description 163
- 150000004767 nitrides Chemical class 0.000 claims description 15
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 11
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 11
- 239000000395 magnesium oxide Substances 0.000 claims description 11
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052582 BN Inorganic materials 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 5
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 20
- 230000005533 two-dimensional electron gas Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 239000004047 hole gas Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
図1は、第1の実施形態に係る半導体装置を例示する模式的断面図である。
図1に示すように、本実施形態に係る半導体装置110は、第1素子部71を含む。この例では、第2素子部72も設けられている。後述するように、実施形態において、第1素子部71が設けられ、第2素子部72が設けられなくても良い。以下、まず、第1素子部71について説明する。
図2(a)〜図2(c)は、半導体装置におけるバンド構造を例示する模式図である。 図2(a)は、第1の実施形態に係る第1素子部71に対応する。図2(a)は、ノーマリオフ動作のp−MOSFETのバンド構造の例に対応する。図2(b)は、参考例のp−MOSFETのバンド構造の例である。この参考例においては、ゲート電極が金属であり、ノーマリオン動作である。図2(c)は、リセス型の参考例のp−MOSFETのバンド構造の例である。
図4に示すように、本実施形態に係る半導体装置111は、上記の第1素子部71及び第2素子部72に加えて、第1配線W1をさらに含む。
図5は、第2の実施形態に係る別の半導体装置を例示する模式図である。
図5に示すように、本実施形態に係る半導体装置120は、第1半導体層10、第2半導体層20、第1〜第3電極51〜53、及び、第1絶縁層58Aを含む。半導体装置120においては、第1電極51が、第1半導体層10の[0001]方向に位置している。そして、第1電極51は、Mg、Be、Zn及びCからなる群から選択された少なくとも1つの第1元素を含む。これ以外は、図1に関して説明した第1素子部71と同様である。
Claims (7)
- Alx1Ga1−x1N(0≦x1<1)を含む第1半導体層と、
前記第1半導体層から第1方向に離れ前記第1半導体層の[000−1]方向に位置し、Al及びBのいずれかの窒化物の多結晶を含む第1電極と、
Alx2Ga1−x2N(x1<x2<1)を含む第2半導体層であって、第1〜第3領域を含み、前記第1方向に対して交差する第2方向において第1領域は前記第2領域及び第3領域の間に位置し、前記第1領域は前記第1半導体層と前記第1電極との間に設けられた、前記第2半導体層と、
前記第1領域と前記第1電極との間に設けられた第1絶縁層と、
前記第2領域と電気的に接続された第2電極と、
前記第3領域と電気的に接続された第3電極と、
を含む第1素子部を備え、
前記第1電極は、Si、Ge、C及びOからなる群から選択された少なくとも1つの第1元素を含む、半導体装置。 - 前記第1絶縁層は、
窒化物を含む第1絶縁膜と、
前記第1絶縁膜と前記第1電極との間に設けられ酸化物を含む第2絶縁膜と、
を含む、請求項1記載の半導体装置。 - 前記第1絶縁膜は、窒化シリコン、窒化アルミニウム及び窒化ホウ素よりなる群から選択された少なくとも1つを含み、
前記第2絶縁膜は、酸化シリコン、酸化アルミニウム、酸化ジルコニウム及び酸化マグネシウムよりなる群から選択された少なくとも1つを含む、
請求項2記載の半導体装置。 - Alx3Ga1−x3N(0≦x3<1)を含む第3半導体層と、
前記第3半導体層から第3方向に離れ前記第3半導体層の[0001]方向に位置し、Al及びBのいずれかの窒化物の多結晶を含む第4電極と、
Alx4Ga1−x4N(x3<x4<1)を含む第4半導体層であって、第4〜第6領域を含み、前記第3方向に対して交差する第4方向において第4領域は前記第5領域及び第6領域の間に位置し、前記第4領域は前記第3半導体層と前記第4電極との間に設けられた、前記第4半導体層と、
前記第4領域と前記第4電極との間に設けられた第2絶縁層と、
前記第5領域と電気的に接続された第5電極と、
前記第6領域と電気的に接続された第6電極と、
を含む第2素子部をさらに備え、
前記第4電極は、Mg、Be、Zn及びCからなる群から選択された少なくとも1つの第2元素を含む、請求項1〜3のいずれか1つに記載の半導体装置。 - 前記第2絶縁層は、
窒化物を含む第3絶縁膜と、
前記第3絶縁膜と前記第4電極との間に設けられ酸化物を含む第4絶縁膜と、
を含む、請求項4記載の半導体装置。 - 前記第3絶縁膜は、窒化シリコン、窒化アルミニウム及び窒化ホウ素よりなる群から選択された少なくとも1つを含み、
前記第4絶縁膜は、酸化シリコン、酸化アルミニウム、酸化ジルコニウム及び酸化マグネシウムよりなる群から選択された少なくとも1つを含む、
請求項5記載の半導体装置。 - 前記第1電極を前記第4電極と電気的に接続する第1配線をさらに備えた、請求項4〜6のいずれか1つに記載の半導体装置。
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