JP6678795B1 - Electronic component tape and electronic component processing method - Google Patents
Electronic component tape and electronic component processing method Download PDFInfo
- Publication number
- JP6678795B1 JP6678795B1 JP2019073511A JP2019073511A JP6678795B1 JP 6678795 B1 JP6678795 B1 JP 6678795B1 JP 2019073511 A JP2019073511 A JP 2019073511A JP 2019073511 A JP2019073511 A JP 2019073511A JP 6678795 B1 JP6678795 B1 JP 6678795B1
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- Prior art keywords
- semiconductor wafer
- electronic component
- resin layer
- tape
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011347 resin Substances 0.000 claims abstract description 116
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- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000155 melt Substances 0.000 claims abstract description 12
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- 238000010586 diagram Methods 0.000 abstract 1
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- 238000011156 evaluation Methods 0.000 description 15
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- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- DKGCZVJEVNZACI-UHFFFAOYSA-N n-[[5-[[bis(oxiran-2-ylmethyl)amino]methyl]-5-methylcyclohexa-1,3-dien-1-yl]methyl]-1-(oxiran-2-yl)-n-(oxiran-2-ylmethyl)methanamine Chemical compound C1C(CN(CC2OC2)CC2OC2)=CC=CC1(C)CN(CC1OC1)CC1CO1 DKGCZVJEVNZACI-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920002601 oligoester Polymers 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- UIIIBRHUICCMAI-UHFFFAOYSA-N prop-2-ene-1-sulfonic acid Chemical group OS(=O)(=O)CC=C UIIIBRHUICCMAI-UHFFFAOYSA-N 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/255—Polyesters
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【課題】高さが大きなバンプを有する半導体ウエハに対しても十分に追従させることができるとともに、半導体ウエハ研削面にディンプルが発生するのを防止することができる電子部品用テープおよび電子部品の加工方法を提供する。【解決手段】本願発明による電子部品用テープ１は、少なくとも1層の樹脂層３を有し、樹脂層３は、貯蔵弾性が６０℃〜８０℃のいずれかの温度において１００００〜２０００００Ｐａであり、メルトフローレートが１０〜２００ｇ/１０ｍｉｎであることを特徴とする。【選択図】図１PROBLEM TO BE SOLVED: To process an electronic component tape and an electronic component capable of sufficiently following a semiconductor wafer having a bump having a large height and preventing dimples from occurring on a ground surface of the semiconductor wafer. Provide a way. An electronic component tape 1 according to the present invention has at least one resin layer 3, and the resin layer 3 has a storage elasticity of 10,000 to 200,000 Pa at any temperature of 60 ° C to 80 ° C. The melt flow rate is 10 to 200 g / 10 min. [Selection diagram] Fig. 1
Description
本発明は、電子部品用テープおよび電子部品の加工方法に関する。さらに詳しくは、主に半導体ウエハの薄膜研削工程に適用できる電子部品用テープとこの電子部品用テープを用いた電子部品の加工方法に関する。 The present invention relates to an electronic component tape and an electronic component processing method. More specifically, the present invention relates to a tape for electronic components that can be mainly applied to a thin film grinding process of a semiconductor wafer and a method for processing an electronic component using the tape for electronic components.
半導体ウエハの製造工程においては、パターン形成後の半導体ウエハは、通常、その厚さを薄くするため、半導体ウエハ裏面に裏面研削加工、エッチング等の処理を施す。この際、半導体ウエハ表面のパターンを保護する目的で該パターン面に半導体ウエハ表面保護用テープが貼り付けられる。半導体ウエハ表面保護用テープは、一般的に、基材フィルムに粘着剤層が積層されてなり、半導体ウエハの裏面に粘着剤層を貼付して用いるようになっている（例えば、特許文献１参照）。 In the process of manufacturing a semiconductor wafer, the semiconductor wafer after pattern formation is usually subjected to processes such as back surface grinding and etching on the back surface of the semiconductor wafer in order to reduce its thickness. At this time, a tape for protecting the surface of the semiconductor wafer is attached to the pattern surface for the purpose of protecting the pattern on the surface of the semiconductor wafer. The tape for protecting the surface of a semiconductor wafer generally has a pressure-sensitive adhesive layer laminated on a base film, and is used by attaching a pressure-sensitive adhesive layer to the back surface of a semiconductor wafer (for example, see Patent Document 1). ).
近年、携帯電話やパソコンなどの小型化、高機能化に伴い、従来の半導体チップの接続方法であるワイヤーボンディングに比べ、省スペースで実装可能なフリップチップ実装が開発されている。フリップチップ実装は、半導体チップ表面と基板を電気的に接続する際、半導体ウエハ表面に形成されたボール状や円柱状のバンプによって接続する。このようなバンプは、従来は高さ（厚さ）が１００μｍ以下のものが主流であったが、更なる半導体チップの小型化の要求に対し、接合信頼性を確保するために高さ（厚さ）が２００μｍを超えるようなバンプを再配線するＷＬＣＳＰ(Wafer level Chip Size Package)等が提案されている。 2. Description of the Related Art In recent years, flip-chip mounting that can be mounted in a smaller space than wire bonding, which is a conventional method of connecting semiconductor chips, has been developed with miniaturization and high functionality of mobile phones and personal computers. In flip-chip mounting, when electrically connecting a semiconductor chip surface to a substrate, the semiconductor chip surface is connected by ball-shaped or column-shaped bumps formed on the semiconductor wafer surface. Conventionally, bumps having a height (thickness) of 100 μm or less have been mainly used. However, in order to meet the demand for further miniaturization of semiconductor chips, the height (thickness) has been increased to ensure bonding reliability. WLCSP (Wafer level Chip Size Package) for rewiring bumps having a thickness of more than 200 μm has been proposed.
従来の半導体ウエハ表面保護用テープを用いて上記のようなウエハの裏面研削を行う場合、高さのあるバンプのため半導体ウエハ表面保護用テープはウエハ表面に十分に密着して保持できない。そうすると、半導体ウエハ表面保護用テープとウエハとの隙間から研削時に噴射される切削水とシリコンの研削屑が浸入し、ウエハ表面を汚染するシーページと呼ばれる現象が発生する。 When grinding the back surface of a wafer as described above using a conventional semiconductor wafer surface protection tape, the semiconductor wafer surface protection tape cannot be held in close contact with the wafer surface because of the tall bumps. Then, the cutting water and silicon grinding chips injected during grinding from the gap between the semiconductor wafer surface protection tape and the wafer enter, causing a phenomenon called seapage that contaminates the wafer surface.
そこで、半導体ウエハ表面の凹凸に半導体ウエハ表面保護用テープを追従させるために、基材フィルムと粘着剤層との間に貯蔵弾性率が１×１０4〜１×１０6Ｐａである中間層を設けた半導体ウエハ表面保護用テープが提案されている（例えば、特許文献２参照）。また、基材フィルムと粘着剤層との間にＪＩＳ−Ａ硬度が１０〜５５、厚みが２５〜４００μｍである熱可塑性樹脂中間層を設けた半導体ウエハ表面保護用テープも提案されている（例えば、特許文献３，４参照）。 Therefore, in order to make the semiconductor wafer surface protection tape follow irregularities on the semiconductor wafer surface, an intermediate layer having a storage elastic modulus of 1 × 10 4 to 1 × 10 6 Pa is provided between the base film and the adhesive layer. A provided semiconductor wafer surface protection tape has been proposed (for example, see Patent Document 2). Further, there has been proposed a tape for protecting a semiconductor wafer surface provided with a thermoplastic resin intermediate layer having a JIS-A hardness of 10 to 55 and a thickness of 25 to 400 μm between a base film and an adhesive layer (for example, , Patent Documents 3 and 4).
しかしながら、上述の特許文献に記載の半導体ウエハ表面保護用テープでは、半導体ウエハ表面保護用テープが半導体ウエハ表面の凹凸に追従した結果、半導体ウエハ表面保護用テープの表面に凹凸が生じ、その状態で半導体ウエハを研削すると、その凹凸が半導体ウエハ研削面に転写されるディンプルが発生する。半導体ウエハ研削面にディンプルが発生すると、研削後の半導体ウエハの厚さ精度（ＴＴＶ：total thickness variation）が悪化するという問題があった。 However, in the tape for protecting a semiconductor wafer surface described in the above-mentioned patent document, as a result of the tape for protecting a semiconductor wafer surface following irregularities on the surface of the semiconductor wafer, irregularities are generated on the surface of the tape for protecting a semiconductor wafer surface. When a semiconductor wafer is ground, dimples whose irregularities are transferred to the ground surface of the semiconductor wafer are generated. When dimples are generated on the ground surface of the semiconductor wafer, there is a problem that the thickness accuracy (TTV: total thickness variation) of the semiconductor wafer after the grinding is deteriorated.
そこで、本発明は、高さが大きなバンプを有する半導体ウエハに対しても十分に追従させることができるとともに、半導体ウエハ研削面にディンプルが発生するのを防止することができる電子部品用テープおよび電子部品の加工方法を提供することを目的とする。 Therefore, the present invention provides an electronic component tape and an electronic device which can sufficiently follow a semiconductor wafer having a bump having a large height and can prevent dimples from being generated on a ground surface of a semiconductor wafer. An object of the present invention is to provide a method of processing a part.
上記課題を解決するために、本願発明による電子部品用テープは、少なくとも1層の樹脂層を有し、前記樹脂層は、貯蔵弾性が６０℃〜８０℃のいずれかの温度において１００００〜２０００００Ｐａであり、メルトフローレートが１０〜２００ｇ/１０ｍｉｎであることを特徴とする。 In order to solve the above-mentioned problem, the electronic component tape according to the present invention has at least one resin layer, and the resin layer has a storage elasticity of 10,000 to 200,000 Pa at any temperature of 60 ° C to 80 ° C. Yes, the melt flow rate is 10 to 200 g / 10 min.
また、上記電子部品用テープは、前記樹脂層の分子量分布Ｍｗ／Ｍｎが１．０〜３．０であることが好ましい。 In the electronic component tape, the resin layer preferably has a molecular weight distribution Mw / Mn of 1.0 to 3.0.
上記電子部品用テープは、１０μｍ以上の段差が設けられている半導体ウエハの回路形成面に５０〜１００℃の温度で貼合されることが好ましい。 The electronic component tape is preferably bonded at a temperature of 50 to 100 ° C. to a circuit forming surface of a semiconductor wafer having a step of 10 μm or more.
上記電子部品用テープは、前記半導体ウエハに貼合された後、前記半導体ウエハのサイズに合わせて切断されることが好ましい。 Preferably, the electronic component tape is cut to fit the size of the semiconductor wafer after being bonded to the semiconductor wafer.
また、上記課題を解決するために、本願発明による電子部品の加工方法は、１０μｍ以上の段差が設けられている半導体ウエハの回路形成面に、上記電子部品用テープを５０〜１００℃の温度で貼合する貼合工程と、前記貼合工程の後に、前記半導体ウエハの回路形成面とは反対側の面を研削する研削工程とを有することを特徴とする。 In order to solve the above-mentioned problems, a method for processing an electronic component according to the present invention comprises applying the electronic component tape to a circuit forming surface of a semiconductor wafer having a step of 10 μm or more at a temperature of 50 to 100 ° C. It is characterized by comprising a bonding step of bonding and, after the bonding step, a grinding step of grinding a surface of the semiconductor wafer opposite to a circuit forming surface.
上記電子部品の加工方法は、前記貼合工程の後に、前記電子部品用テープを前記半導体ウエハのサイズに合わせて切断する切断工程を有し、前記切断工程の後に、前記研削工程を実施することが好ましい。 The method for processing an electronic component may include, after the bonding step, a cutting step of cutting the electronic component tape according to the size of the semiconductor wafer, and after the cutting step, performing the grinding step. Is preferred.
本発明に係る電子部品用テープによれば、高さが大きなバンプを有する半導体ウエハに対しても十分に追従させることができるとともに、半導体ウエハ研削面にディンプルが発生するのを防止することができる。 ADVANTAGE OF THE INVENTION According to the tape for electronic components which concerns on this invention, while being able to follow sufficiently a semiconductor wafer which has a bump with a large height, it can prevent that a dimple is generated in the grinding surface of a semiconductor wafer. .
以下に、本発明の実施の形態を図面に基づいて詳細に説明する。図１は、本発明の実施形態に係る電子部品用テープ１の構造を模式的に示す断面図である。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a sectional view schematically showing the structure of an electronic component tape 1 according to an embodiment of the present invention.
図１に示すように、本実施形態に係る電子部品用テープ１は、基材フィルム２を有しており、基材フィルム２の少なくとも片面側には、樹脂層３が設けられている。樹脂層３の上面には粘着剤層４が設けられており、粘着剤層４の上面には、表面が離型処理された剥離フィルム５の離型処理面が粘着剤層４側に来るように積層されていている。なお、本実施の形態においては剥離フィルムが設けられているが、剥離フィルム５は必ずしも設ける必要はない。 As shown in FIG. 1, the electronic component tape 1 according to the present embodiment has a base film 2, and a resin layer 3 is provided on at least one side of the base film 2. An adhesive layer 4 is provided on the upper surface of the resin layer 3, and the release surface of the release film 5 whose surface has been release-treated is on the adhesive layer 4 side on the upper surface of the adhesive layer 4. Are laminated. Although a release film is provided in this embodiment, the release film 5 is not necessarily provided.
以下、本実施形態の電子部品用テープ１の各構成要素について詳細に説明する。 Hereinafter, each component of the electronic component tape 1 of the present embodiment will be described in detail.
（基材フィルム２）
本発明の電子部品用テープ１の基材フィルム２として、公知のプラスチック、ゴム等を用いることができる。基材フィルム２は、特に、粘着剤層４に放射線硬化性の組成物を使用する場合には、その組成物が硬化する波長の放射線の透過性の良いものを選択するのがよい。なお、ここで、放射線とは、例えば、紫外線のような光、あるいはレーザー光、または電子線のような電離性放射線を総称していうものであり、以下、これらを総称して放射線という。
(Base film 2)
As the base film 2 of the electronic component tape 1 of the present invention, a known plastic, rubber, or the like can be used. In particular, when a radiation-curable composition is used for the pressure-sensitive adhesive layer 4, it is preferable to select a substrate film 2 having good transparency to radiation having a wavelength at which the composition cures. Here, the term “radiation” refers to, for example, light such as ultraviolet light, laser light, or ionizing radiation such as an electron beam, and these are hereinafter collectively referred to as radiation.
このような基材フィルム２として選択し得る樹脂の例としては、高密度ポリエチレン（ＨＤＰＥ）、低密度ポリエチレン（ＬＤＰＥ）、ポリプロピレン（ＰＰ）、エチレン−酢酸ビニル共重合体（ＥＶＡ）、エチレンアクリル酸共重合体やエチレンメタクリル酸共重合体とそれらの金属架橋体（アイオノマー）等のポリオレフィン類や、ポリエチレンテレフタレート（ＰＥＴ）、ポリエチレンテレナフタレート（ＰＥＮ）、ポリエチレンテレブタレート（ＰＢＴ）等のポリエステル類、またアクリル樹脂を架橋させフィルム状にしたものを使用することができる。各々の樹脂は、単独で単層基材として使用してもよく、樹脂を組み合わせて混合したり、異なる樹脂の複層構成としてもよい。また、電子部品用テープ１を認識・識別するための着色用顔料などを配合するなど、物性に影響が出ない範囲で添加物を加えてもよい。 Examples of resins that can be selected as such a base film 2 include high-density polyethylene (HDPE), low-density polyethylene (LDPE), polypropylene (PP), ethylene-vinyl acetate copolymer (EVA), and ethylene acrylic acid. Polyolefins such as copolymers and ethylene methacrylic acid copolymers and their metal cross-linked products (ionomers), and polyesters such as polyethylene terephthalate (PET), polyethylene terephthalate (PEN), and polyethylene terebutarate (PBT); A film formed by crosslinking an acrylic resin can be used. Each resin may be used alone as a single-layer base material, may be mixed and mixed with resins, or may have a multilayer structure of different resins. Additives may be added to the extent that physical properties are not affected, such as by blending a coloring pigment or the like for recognizing and identifying the electronic component tape 1.
基材フィルム２は、電子部品用テープ１としてのハンドリング性や半導体ウエハ６の薄膜研削時の反り抑制のため、２５℃における引張弾性率が０．０１〜１０ＧＰａが好ましく、０．１〜５ＧＰａが更に好ましい。
更に基材フィルム２が最表面である場合は、電子部品用テープ１の加熱貼合や半導体ウエハ６の研磨などによる加工熱に耐えることが求められるとともに、電子部品用テープ１の剥離時にテープ背面にヒートシールフィルムを加熱圧着し剥離する工程に用いられる場合には、融点が７０〜１７０℃であることが好ましく、９０〜１４０℃であると更に好ましい。
The base film 2 preferably has a tensile modulus at 25 ° C. of 0.01 to 10 GPa, preferably 0.1 to 5 GPa, at 25 ° C. for handling properties as the electronic component tape 1 and suppression of warpage during thin film grinding of the semiconductor wafer 6. More preferred.
Further, when the base film 2 is the outermost surface, the substrate film 2 is required to withstand the processing heat caused by the heat bonding of the electronic component tape 1 and the polishing of the semiconductor wafer 6, and the tape back surface when the electronic component tape 1 is peeled off. When the heat sealing film is used in a step of heat-compression bonding and peeling, the melting point is preferably from 70 to 170 ° C, more preferably from 90 to 140 ° C.
基材フィルム２の厚さは、特に限定されるものではなく、適宜に設定してよいが、１０〜３００μｍ、更には２５〜１００μｍが好ましい。 The thickness of the base film 2 is not particularly limited and may be appropriately set, but is preferably 10 to 300 μm, more preferably 25 to 100 μm.
上記基材フィルム２の製造方法は特に限定されない。カレンダー法、Ｔダイ押出法、インフレーション法等など従来の方法を用いることができる。また、独立に製膜したフィルムと他のフィルムを接着剤等で貼り合わせて基材フィルムとすることもできる。 The method for producing the base film 2 is not particularly limited. Conventional methods such as a calender method, a T-die extrusion method, an inflation method and the like can be used. Alternatively, a film formed independently and another film may be bonded to each other with an adhesive or the like to form a base film.
基材フィルム２の樹脂層３が設けられる側の表面には、樹脂層３との密着性を向上させるために、コロナ処理やプライマー層を設ける等の処理を適宜施してもよい。なお、基材フィルム２の樹脂層３が設けられない側の表面をシボ加工もしくは滑剤コーティングすることも好ましく、これによって、本発明の電子部品用テープ１の保管時のブロッキング防止等の効果を得ることができる。 The surface of the base film 2 on which the resin layer 3 is provided may be appropriately subjected to a treatment such as a corona treatment or a provision of a primer layer in order to improve the adhesion to the resin layer 3. In addition, it is also preferable that the surface of the base film 2 on the side where the resin layer 3 is not provided is textured or coated with a lubricant, whereby an effect such as blocking prevention during storage of the electronic component tape 1 of the present invention is obtained. be able to.
電子部品用テープ１の剥離時にテープ背面にヒートシールフィルムを加熱圧着し剥離する工程に用いられる場合には、基材フィルム２の樹脂層３が設けられない側の表面にヒートシールと接着性を有するコートや樹脂層を設けることも好ましい。これらヒートシール層の融点は７０〜１７０℃であることが好ましく、９０〜１４０℃であることが更に好ましい。特に基材フィルム２として、ＰＥＴなどの高融点材料を用いた場合にはヒートシール層が有効である。 When used in a step of heat-pressing and peeling a heat seal film on the back surface of the tape for electronic component 1 when peeling, the heat seal and adhesive properties are applied to the surface of the base film 2 on the side where the resin layer 3 is not provided. It is also preferable to provide a coat or a resin layer having the same. The melting point of these heat seal layers is preferably from 70 to 170 ° C, more preferably from 90 to 140 ° C. In particular, when a high melting point material such as PET is used as the base film 2, a heat seal layer is effective.
（樹脂層３）
樹脂層３を構成する樹脂としては、貯蔵弾性が６０℃〜８０℃のいずれかの温度において、更に好ましくは７０℃の温度において、１００００〜２０００００Ｐａであり、メルトフローレートが１０〜２００ｇ/１０ｍｉｎであれば、特に限定されず公知の樹脂を用いることができる。
(Resin layer 3)
The resin constituting the resin layer 3 has a storage elasticity of 10,000 to 200,000 Pa at any temperature of 60 ° C. to 80 ° C., more preferably 70 ° C., and a melt flow rate of 10 to 200 g / 10 min. If there is, there is no particular limitation, and a known resin can be used.
樹脂層３として選択し得る樹脂の例としては、ポリエチレン、エチレン−酢酸ビニル共重合体、エチレン−アクリル酸エチル共重合体、エチレン−アクリル酸メチル共重合体、エチレン−アクリル酸共重合体、アイオノマー等のα−オレフィンの単独重合体または共重合体が挙げられる。各々の樹脂は、単独で単層として使用してもよく、これらの樹脂を組み合わせて混合したり、異なる樹脂の複層構成としてもよい。 Examples of resins that can be selected as the resin layer 3 include polyethylene, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, and ionomer. And α-olefin homopolymers and copolymers. Each resin may be used alone as a single layer, or these resins may be combined and mixed, or may be formed as a multilayer structure of different resins.
樹脂層３は、貯蔵弾性が６０℃〜８０℃のいずれかの温度において１００００〜２０００００Ｐａであり、メルトフローレートが１０〜２００ｇ/１０ｍｉｎである。貯蔵弾性が６０℃〜８０℃のいずれの温度においても１００００Ｐａ未満であると、加熱貼合により変形しすぎるため、電子部品用テープ１の厚さ精度が悪くなることや、半導体ウエハ６の側面に樹脂層３がはみ出ることにより、半導体ウエハ６側面に沿って電子部品用テープ１をカットする際にバリやダマとなり半導体ウエハ６を汚染する。樹脂層３の切断部分にバリ等が発生すると、半導体ウエハ６の裏面を研削または研磨した際に、バリ等が加工面に巻き込まれ、半導体ウエハ６にエッジクラックが生じたり割れを生じたりする。また、半導体ウエハ６のドライポリッシュなどの研磨時に加工による摩擦熱で６０℃を超えることもあり、半導体ウエハ６の破損や厚さ精度不良になることが考えられる。更に、電子部品用テープ１の輸送や保管において高温時は６０℃を超えることもあり、電子部品用テープ１の端部が軟化し、電子部品用テープ１を巻物状にして輸送や保管した場合に端部での誤着や軟化した樹脂による周辺汚染も考えられる。 The resin layer 3 has a storage elasticity of 10,000 to 200,000 Pa at any temperature of 60 ° C to 80 ° C, and a melt flow rate of 10 to 200 g / 10 min. If the storage elasticity is less than 10000 Pa at any temperature of 60 ° C. to 80 ° C., it is excessively deformed by heat bonding, so that the thickness accuracy of the electronic component tape 1 is deteriorated. When the resin layer 3 protrudes, when the electronic component tape 1 is cut along the side surface of the semiconductor wafer 6, it forms burrs or lumps and contaminates the semiconductor wafer 6. If burrs or the like occur in the cut portion of the resin layer 3, when the back surface of the semiconductor wafer 6 is ground or polished, the burrs or the like are caught in the processing surface, and edge cracks or cracks occur in the semiconductor wafer 6. Further, frictional heat generated during processing such as dry polishing of the semiconductor wafer 6 may exceed 60 ° C., which may result in damage to the semiconductor wafer 6 or poor thickness accuracy. Further, when transporting or storing the electronic component tape 1, the temperature may exceed 60 ° C. at a high temperature, the end of the electronic component tape 1 is softened, and the electronic component tape 1 is transported or stored in a roll shape. In addition, erroneous attachment at the end and peripheral contamination due to the softened resin are also conceivable.
貯蔵弾性が６０℃〜８０℃のいずれの温度においても２０００００Ｐａを超えると、電子部品用テープ１が半導体ウエハ６表面の凹凸６１に十分に追従できず、研削水の侵入や研削時の半導体ウエハ破損につながる。 If the storage elasticity exceeds 200,000 Pa at any temperature between 60 ° C. and 80 ° C., the electronic component tape 1 cannot sufficiently follow the irregularities 61 on the surface of the semiconductor wafer 6, causing intrusion of grinding water and breakage of the semiconductor wafer during grinding. Leads to.
樹脂層３の貯蔵弾性率は好ましくは７０℃において１００００〜２０００００Ｐａであり、より好ましくは７０℃において３００００〜１６００００Ｐａである。 The storage elastic modulus of the resin layer 3 is preferably 10,000 to 200,000 Pa at 70 ° C., and more preferably 30,000 to 160,000 Pa at 70 ° C.
樹脂層３は、メルトフローレートが１０ｇ/１０ｍｉｎ未満であると、電子部品用テープ１が半導体ウエハ６表面の凹凸６１に追従したときに、電子部品用テープ１の表面に凹凸が生じ、半導体ウエハ６を研削するとディンプルが発生し、研削後の半導体ウエハの６厚さ精度が悪化することや、電子部品用テープ１の背面と真空吸着したときにリークし、吸着できないことが考えられる。メルトフローレートが２００ｇ/１０ｍｉｎを超えると、樹脂層３の製膜時や、電子部品用テープ１の貼合後の厚さ精度が悪くなる。メルトフローレートは好ましくは１５〜７０であり、更に好ましくは３０〜７０である。 If the resin layer 3 has a melt flow rate of less than 10 g / 10 min, when the electronic component tape 1 follows the irregularities 61 on the surface of the semiconductor wafer 6, irregularities are generated on the surface of the electronic component tape 1. It is conceivable that dimples occur when grinding 6 and the thickness accuracy of the semiconductor wafer 6 after grinding is deteriorated, or that when the vacuum is sucked on the back surface of the electronic component tape 1, it cannot be sucked. When the melt flow rate exceeds 200 g / 10 min, the thickness accuracy at the time of forming the resin layer 3 and after laminating the electronic component tape 1 is deteriorated. The melt flow rate is preferably from 15 to 70, and more preferably from 30 to 70.
本発明では、メルトフローレート（ＭＦＲ）は、ＪＩＳ Ｋ７２１０に準拠して測定し、１９０℃、２．１６ｋｇ荷重下で１０分間あたりに流出する樹脂の質量（ｇ／１０分）である。 In the present invention, the melt flow rate (MFR) is measured according to JIS K7210 and is the mass (g / 10 minutes) of the resin flowing out at 190 ° C. under a load of 2.16 kg per 10 minutes.
樹脂層３の６０〜８０℃の貯蔵弾性率は、例えば、樹脂の密度やコモノマー共重合体の場合はコモノマー含有比率で調整することが可能である。エチレン−酢酸ビニル共重合体、エチレン−メチルアクリレート共重合体、エチレン−ブチルアクリレートの場合は、コモノマー含有率１０〜５０質量％が好ましく、２５〜４５％が更に好ましい。α-オレフィンの場合は密度が０．８７〜０．９３であることが好ましく、０．８８〜０．９０が更に好ましい。 The storage elastic modulus at 60 to 80 ° C. of the resin layer 3 can be adjusted by, for example, the density of the resin or the comonomer content ratio in the case of a comonomer copolymer. In the case of ethylene-vinyl acetate copolymer, ethylene-methyl acrylate copolymer, and ethylene-butyl acrylate, the comonomer content is preferably 10 to 50% by mass, and more preferably 25 to 45%. In the case of α-olefin, the density is preferably 0.87 to 0.93, more preferably 0.88 to 0.90.
樹脂層３のメルトフローレートは、例えば、樹脂の分子量で調整が可能で、重量平均分子量が１００００〜２０００００が好ましく、４００００〜８００００が更に好ましい。 The melt flow rate of the resin layer 3 can be adjusted by, for example, the molecular weight of the resin, and the weight average molecular weight is preferably 10,000 to 200,000, more preferably 40,000 to 80,000.
樹脂層３の分子量分布Ｍｗ／Ｍｎは、１．０〜３．０であることが好ましい。分子量分布Ｍｗ／Ｍｎが３．０超であると、加熱貼合により変形しすぎるため、電子部品用テープ１の厚さ精度が悪くなることや、半導体ウエハ６の側面に樹脂層３がはみ出ることにより、半導体ウエハ６側面に沿って電子部品用テープ１をカットする際にバリやダマとなり半導体ウエハ６を汚染する。樹脂層３の切断部分にバリ等が発生すると、半導体ウエハ６の裏面を研削または研磨した際に、バリ等が加工面に巻き込まれ、半導体ウエハ６にエッジクラックが生じたり割れを生じたりする。分子量分布Ｍｗ／Ｍｎは理論上１．０超である。 The molecular weight distribution Mw / Mn of the resin layer 3 is preferably from 1.0 to 3.0. When the molecular weight distribution Mw / Mn is more than 3.0, the resin layer 3 is excessively deformed by heat bonding, so that the thickness accuracy of the electronic component tape 1 is deteriorated, and the resin layer 3 protrudes from the side surface of the semiconductor wafer 6. As a result, when the electronic component tape 1 is cut along the side surface of the semiconductor wafer 6, burrs and lumps are generated and the semiconductor wafer 6 is contaminated. If burrs or the like occur in the cut portion of the resin layer 3, when the back surface of the semiconductor wafer 6 is ground or polished, the burrs or the like are caught in the processing surface, and edge cracks or cracks occur in the semiconductor wafer 6. The molecular weight distribution Mw / Mn is theoretically more than 1.0.
分子量分布（Ｍｗ／Ｍｎ）は、重量平均分子量（Ｍｗ）と数平均分子量（Ｍｎ）との比である。重量平均分子量（Ｍｗ）及び数平均分子量（Ｍｎ）は、ゲルパミエーションクロマトグラフィ（ＧＰＣ）法によりポリスチレン換算分子量として測定される。具体的には、重量平均分子量（Ｍｗ）及び数平均分子量（Ｍｎ）は、（メタ）アクリルポリマーをテトラヒドロフラン（ＴＨＦ）によって５０倍希釈して得られた希釈液をフィルターで濾過し、得られた濾液を用いてＧＰＣ法によりポリスチレン換算分子量として測定される。 The molecular weight distribution (Mw / Mn) is the ratio between the weight average molecular weight (Mw) and the number average molecular weight (Mn). The weight average molecular weight (Mw) and the number average molecular weight (Mn) are measured by gel permeation chromatography (GPC) as polystyrene equivalent molecular weight. Specifically, the weight average molecular weight (Mw) and the number average molecular weight (Mn) were obtained by filtering a diluent obtained by diluting (meth) acrylic polymer 50-fold with tetrahydrofuran (THF) through a filter. It is measured as a polystyrene equivalent molecular weight by a GPC method using a filtrate.
樹脂層３には必要に応じて、安定剤、滑剤、酸化防止剤、顔料、可塑剤、等を含有していてもよい。しかし、添加剤の種類、含有量によっては、粘着剤層や半導体ウエハが汚染されることもあるため、その場合は樹脂層３と粘着剤層との間にバリヤー層を設けるとよい。 The resin layer 3 may contain a stabilizer, a lubricant, an antioxidant, a pigment, a plasticizer, and the like as necessary. However, depending on the type and content of the additive, the pressure-sensitive adhesive layer and the semiconductor wafer may be contaminated. In this case, it is preferable to provide a barrier layer between the resin layer 3 and the pressure-sensitive adhesive layer.
樹脂層３の厚みは３０〜５００μｍが好ましく、８０〜３００μｍがさらに好ましい。 The thickness of the resin layer 3 is preferably from 30 to 500 μm, more preferably from 80 to 300 μm.
樹脂層３の積層方法は、特に制限されるものではないが、例えば、Ｔダイ押出機でフィルム状に押出成形しながら、予め用意しておいた基材フィルム２とラミネートする方法、基材フィルム２と基材フィルム３をそれぞれ製膜してドライラミネートや熱ラミネートする方法や、基材フィルム２と樹脂層３を共押出により同時に製膜する方法等が挙げられる。共押出の方法は、Ｔダイ押出法のほかに、インフレーション法等が挙げられる。 The method for laminating the resin layer 3 is not particularly limited. For example, a method of laminating the resin layer 3 with a previously prepared substrate film 2 while extruding the film into a film by a T-die extruder, 2 and a base film 3 and then a method of dry lamination or heat lamination, and a method of simultaneously forming the base film 2 and the resin layer 3 by co-extrusion. Examples of the coextrusion method include an inflation method in addition to the T-die extrusion method.
（粘着剤層４）
粘着剤層４を構成する粘着剤組成物は、特に制限するものではなく、従来のものを用いることができるが、（メタ）アクリル酸エステルを構成成分とする単独重合体や、（メタ）アクリル酸エステルを構成成分として有する共重合体を挙げることができる。アクリル酸エステルを構成成分として含む重合体を構成する単量体成分としては、例えば、メチル、エチル、ｎ−プルピル、イソプルピル、ｎ−ブチル、ｔ−ブチル、イソブチル、アミル、イソアミル、ヘキシル、ヘプチル、シクロヘキシル、２−エチルヘキシル、オクチル、イソオクチル、ノニル、イソノニル、デシル、イソデシル、ウンデシル、ラウリル、トリデシル、テトラデシル、ステアリル、オクタデシル、及びドデシルなどの炭素数３０以下、好ましくは炭素数４〜１８の直鎖又は分岐のアルキル基を有するアルキルアクリレート又はアルキルメタクリレートが挙げられる。これらアルキル（メタ）アクリレートは単独で用いてもよく、２種以上を併用してもよい。
(Adhesive layer 4)
The pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer 4 is not particularly limited, and a conventional one can be used. However, a homopolymer having a (meth) acrylate ester as a constituent component, a (meth) acrylic Copolymers having an acid ester as a component can be given. Examples of the monomer component constituting the polymer containing an acrylate ester as a component include, for example, methyl, ethyl, n-propyl, isopropyl, n-butyl, t-butyl, isobutyl, amyl, isoamyl, hexyl, heptyl, Cyclohexyl, 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl, dodecyl, etc. Alkyl acrylate or alkyl methacrylate having a branched alkyl group is exemplified. These alkyl (meth) acrylates may be used alone or in combination of two or more.
上記以外のアクリル樹脂中の構成成分としては、以下の単量体を含むことができる。例えば、アクリル酸、メタクリル酸、カルボキシエチル（メタ）アクリレート、カルボキシペンチル（メタ）アクリレート、イタコン酸、マレイン酸、フマル酸、及びクロトン酸などのカルボキシル基含有モノマー、無水マレイン酸や無水イタコン酸などの酸無水物モノマー、（メタ）アクリル酸２−ヒドロキシエチル、（メタ）アクリル酸２−ヒドロキシプロピル、（メタ）アクリル酸４−ヒドロキシブチル、（メタ）アクリル酸６−ヒドロキシヘキシル、（メタ）アクリル酸８−ヒドロキシオクチル、（メタ）アクリル酸１０−ヒドロキシデシル、（メタ）アクリル酸１２−ヒドロキシラウリル及び（４−ヒドロキシメチルシクロヘキシル）メチル（メタ）アクリレートなどのヒドロキシル基含有モノマー、スチレンスルホン酸、アリルスルホン酸、２−（メタ）アクリルアミド−２−メチルプロパンスルホン酸、（メタ）アクリルアミドプロパンスルホン酸、スルホプロピル（メタ）アクリレート及び（メタ）アクリロイルオキシナフタレンスルホン酸などのスルホン酸基含有モノマー、２−ヒドロキシエチルアクリロイルホスフェートなどのリン酸基含有モノマー、（メタ）アクリルアミド、（メタ）アクリル酸Ｎ−ヒドロキシメチルアミド、（メタ）アクリル酸アルキルアミノアルキルエステル（例えば、ジメチルアミノエチルメタクリレート、ｔ−ブチルアミノエチルメタクリレート等）、Ｎ−ビニルピロリドン、アクリロイルモルフオリン、酢酸ビニル、スチレン、アクリロニトリル等が挙げられる。これらモノマー成分は単独で用いてもよく、２種以上を併用してもよい。 As the constituent components in the acrylic resin other than the above, the following monomers can be included. For example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride and itaconic anhydride; Acid anhydride monomer, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, (meth) acrylic acid Hydroxyl group-containing monomers such as 8-hydroxyoctyl, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate, styrenesulfonic acid, allyl Sulfonic acid group-containing monomers such as sulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate and (meth) acryloyloxynaphthalenesulfonic acid; Phosphoric acid group-containing monomers such as hydroxyethyl acryloyl phosphate, (meth) acrylamide, (meth) acrylic acid N-hydroxymethylamide, (meth) acrylic acid alkylaminoalkyl ester (for example, dimethylaminoethyl methacrylate, t-butylaminoethyl Methacrylate), N-vinylpyrrolidone, acryloylmorpholin, vinyl acetate, styrene, acrylonitrile and the like. These monomer components may be used alone or in combination of two or more.
また、アクリル樹脂としては、構成成分として、以下の多官能性単量体を含むことができる。その例としては、ヘキサンジオールジ（メタ）アクリレート、（ポリ）エチレングリコールジ（メタ）アクリレート、（ポリ）プロピレングリコールジ（メタ）アクリレート、ネオペンチルグリコールジ（メタ）アクリレート、ペンタエリスリトールジ（メタ）アクリレート、トリメチロールプロパントリ（メタ）アクリレート、テトラメチロールメタンテトラ（メタ）アクリレート、ペンタエリスリトールトリ（メタ）アクリレート、ペンタエリスリトールテトラ（メタ）アクリレート、ジペンタエリスリトールモノヒドロキシペンタ（メタ）アクリレート、ジペンタエリスリトールヘキサ（メタ）アクリレート、エポキシ（メタ）アクリレート、ポリエステル（メタ）アクリレート、及びウレタン（メタ）アクリレートなどが挙げられる。これら多官能性単量体は単独で用いてもよく、２種以上を併用してもよい。 In addition, the acrylic resin may include the following polyfunctional monomers as constituent components. Examples include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, and pentaerythritol di (meth) acrylate. Acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethanetetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol Hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, and urethane (meth) acrylateThese polyfunctional monomers may be used alone or in combination of two or more.
アクリル酸エステルとしては、アクリル酸エチル、アクリル酸ブチル、アクリル酸２−エチルヘキシル、アクリル酸グリシジル、アクリル酸２−ヒドロキシエチルなどを挙げることができる。また上記のアクリル酸エステルをたとえばメタクリル酸エステルに代えたものなどのアクリル系ポリマーと硬化剤を用いてなるものを使用することができる。 Examples of the acrylate include ethyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, glycidyl acrylate, 2-hydroxyethyl acrylate, and the like. In addition, it is possible to use one obtained by using an acrylic polymer and a curing agent, such as the above-mentioned acrylic acid ester replaced with, for example, methacrylic acid ester.
硬化剤としては、特開２００７−１４６１０４号公報に記載の硬化剤を使用することができる。例えば、１，３−ビス（Ｎ，Ｎ−ジグリシジルアミノメチル）シクロヘキサン、１，３−ビス（Ｎ，Ｎ−ジグリシジルアミノメチル）トルエン、１，３−ビス（Ｎ，Ｎ−ジグリシジルアミノメチル）ベンゼン、Ｎ，Ｎ，Ｎ，Ｎ'−テトラグリシジル−ｍ−キシレンジアミンなどの分子中に２個以上のエポキシ基を有するエポキシ化合物、２，４−トリレンジイソシアネート、２，６−トリレンジイソシアネート、１，３−キシリレンジイソシアネート、１，４−キシレンジイソシアネート、ジフェニルメタン−４，４'−ジイソシアネートなどの分子中に２個以上のイソシアネート基を有するイソシアネート系化合物、テトラメチロール−トリ−β−アジリジニルプロピオネート、トリメチロール−トリ−β−アジリジニルプロピオネート、トリメチロールプロパン−トリ−β−アジリジニルプロピオネート、トリメチロールプロパン−トリ−β−（２−メチルアジリジン）プロピオネートなどの分子中に２個以上のアジリジニル基を有するアジリジン系化合物等が挙げられる。硬化剤の含有量は、所望の粘着力や貯蔵弾性率に応じて調整すれば良く、上記重合体１００質量部に対して、０．０１〜１０質量部が好ましく、さらに好ましくは、０．１〜５質量部である。 As the curing agent, a curing agent described in JP-A-2007-146104 can be used. For example, 1,3-bis (N, N-diglycidylaminomethyl) cyclohexane, 1,3-bis (N, N-diglycidylaminomethyl) toluene, 1,3-bis (N, N-diglycidylaminomethyl) ) Epoxy compounds having two or more epoxy groups in a molecule, such as benzene, N, N, N, N'-tetraglycidyl-m-xylenediamine, 2,4-tolylenediisocyanate, 2,6-tolylenediisocyanate , 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4,4'-diisocyanate, etc., an isocyanate compound having two or more isocyanate groups in a molecule, tetramethylol-tri-β-aziridini Lepropionate, trimethylol-tri-β-aziridinylpropionate, tripropionate Chi trimethylolpropane - tri-.beta.-aziridinyl propionate, trimethylolpropane - aziridine compound having two or more aziridinyl group in the molecule, such as tri-.beta.-(2-methyl aziridine) propionate, and the like. The content of the curing agent may be adjusted according to the desired adhesive strength or storage modulus, and is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 10 parts by mass, based on 100 parts by mass of the polymer. To 5 parts by mass.
上記のような粘着剤層４中に光重合性化合物及び光重合開始剤を含ませることによって、紫外線を照射することにより硬化し、粘着剤層４は粘着力を低下させることが出来る。このような光重合性化合物としては、たとえば特開昭６０−１９６９５６号公報および特開昭６０−２２３１３９号公報に開示されているような光照射によって三次元網状化しうる分子内に光重合性炭素−炭素二重結合を少なくとも２個以上有する低分子量化合物が広く用いられる。 By including the photopolymerizable compound and the photopolymerization initiator in the pressure-sensitive adhesive layer 4 as described above, the pressure-sensitive adhesive layer 4 is cured by irradiating ultraviolet rays, and the pressure-sensitive adhesive layer 4 can reduce the adhesive strength. Such photopolymerizable compounds include, for example, a photopolymerizable carbon in a molecule which can be three-dimensionally reticulated by light irradiation as disclosed in JP-A-60-196965 and JP-A-60-223139. -Low molecular weight compounds having at least two or more carbon double bonds are widely used.
具体的には、トリメチロールプロパントリアクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールテトラアクリレート、ジペンタエリスリトールモノヒドロキシペンタアクリレート、ジペンタエリスリトールヘキサアクリレートあるいは１，４−ブチレングリコールジアクリレート、１，６−ヘキサンジオールジアクリレート、ポリエチレングリコールジアクリレート、市販のオリゴエステルアクリレートなどが用いられる。 Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or 1,4-butylene glycol diacrylate, 1,6-hexanediol Diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate and the like are used.
光重合開始剤としては、特開２００７−１４６１０４又は特開２００４−１８６４２９号公報に記載の光重合開始剤を使用することができる。イソプロピルベンゾインエーテル、イソブチルベンゾインエーテル、ベンゾフェノン、ミヒラーズケトン、クロロチオキサントン、ベンジルメチルケタール、α−ヒドロキシシクロヘキシルフェニルケトン、２−ヒドロキシメチルフェニルプロパン等を併用することができる。 As the photopolymerization initiator, the photopolymerization initiator described in JP-A-2007-146104 or JP-A-2004-186429 can be used. Isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, benzyl methyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl propane and the like can be used in combination.
粘着剤層４として、重合体中に光重合性炭素−炭素二重結合を有する重合体、光重合開始剤、及び硬化剤を含む樹脂組成物を用いてなる光重合性粘着剤を用いることができる。重合体中に炭素−炭素二重結合を有する重合体としては、側鎖に炭素原子数が４〜１２、さらに好ましくは炭素原子数８のアルキル基を有する（メタ）アクリル酸エステルなどの単量体や共重合性改質単量体を１種または２種以上を任意の方法で単独重合または共重合した（メタ）アクリル系重合体が好ましい。 As the pressure-sensitive adhesive layer 4, a photopolymerizable pressure-sensitive adhesive obtained by using a resin composition containing a polymer having a photopolymerizable carbon-carbon double bond in a polymer, a photopolymerization initiator, and a curing agent may be used. it can. As the polymer having a carbon-carbon double bond in the polymer, a monomer such as a (meth) acrylate ester having an alkyl group having 4 to 12 carbon atoms, more preferably 8 carbon atoms in a side chain is preferable. A (meth) acrylic polymer obtained by homopolymerizing or copolymerizing one or more of the polymer or copolymerizable modifying monomer by an arbitrary method is preferable.
その他、粘着剤層４を構成する粘着剤組成物には、必要に応じて粘着付与剤、粘着調整剤、界面活性剤等、あるいはその他の改質剤等を配合することができる。また、無機化合物フィラーを適宜加えてもよい。 In addition, the pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer 4 may contain a tackifier, a pressure-adjusting agent, a surfactant or the like, or other modifiers, if necessary. Further, an inorganic compound filler may be appropriately added.
粘着剤層４は、例えば、粘着剤組成物を剥離フィルム５上に塗布、乾燥させて樹脂層３に転写することで形成することができる。本発明において粘着剤層４の厚さは、好ましくは１〜１３０μｍ、より好ましくは１〜４０μｍ、更に好ましくは１〜２０μｍである。本発明における粘着剤層４の役割は主に半導体ウエハ６表面への粘着性および剥離性の確保である。粘着剤層４が厚いと、その貯蔵弾性率によっては半導体ウエハ６への追従性を妨げることや、半導体ウエハ６への糊残りの要因となる可能性がある。 The pressure-sensitive adhesive layer 4 can be formed by, for example, applying a pressure-sensitive adhesive composition on a release film 5, drying the transfer, and transferring the same to the resin layer 3. In the present invention, the thickness of the pressure-sensitive adhesive layer 4 is preferably 1 to 130 μm, more preferably 1 to 40 μm, and still more preferably 1 to 20 μm. The role of the pressure-sensitive adhesive layer 4 in the present invention is mainly to ensure adhesion and peelability to the surface of the semiconductor wafer 6. If the pressure-sensitive adhesive layer 4 is thick, it may obstruct the ability to follow the semiconductor wafer 6 or cause adhesive residue on the semiconductor wafer 6 depending on the storage elastic modulus.
粘着剤層４と樹脂層３の合計厚さは半導体ウエハ６表面の凹凸高さ以上であることが好ましい。樹脂層３単独の厚さが半導体ウエハ６表面の凹凸高さの１．０〜２．０倍であることが更に好ましい。 The total thickness of the pressure-sensitive adhesive layer 4 and the resin layer 3 is preferably equal to or greater than the height of the irregularities on the surface of the semiconductor wafer 6. More preferably, the thickness of the resin layer 3 alone is 1.0 to 2.0 times the height of the unevenness on the surface of the semiconductor wafer 6.
（剥離フィルム５）
また、電子部品用テープ１には、剥離フィルム５が粘着剤層４上に設けられていてもよい。剥離フィルム５は、セパレータや剥離層、剥離ライナーとも呼ばれ、粘着剤層４を保護する目的のため、また粘着剤を平滑にする目的のために、設けられる。剥離フィルム５の構成材料としては、ポリエチレン、ポリプロピレン、ポリエチレンテレフタレート等の合成樹脂フィルムや紙などが挙げられる。剥離フィルム５の表面には粘着剤層４からの剥離性を高めるため、必要に応じてシリコーン処理、長鎖アルキル処理、フッ素処理等の剥離処理が施されていても良い。また、必要に応じて、粘着剤層４が環境紫外線等意図しない紫外線の暴露によって反応してしまわないように、紫外線防止処理を施すことも好ましい。剥離フィルム５の厚みは、通常１０〜１００μｍ、好ましくは２５〜５０μｍ程度である。
(Release film 5)
In the electronic component tape 1, a release film 5 may be provided on the pressure-sensitive adhesive layer 4. The release film 5 is also called a separator, a release layer, or a release liner, and is provided for the purpose of protecting the adhesive layer 4 and for the purpose of smoothing the adhesive. Examples of a constituent material of the release film 5 include a synthetic resin film such as polyethylene, polypropylene, and polyethylene terephthalate, and paper. The surface of the release film 5 may be subjected to a release treatment such as a silicone treatment, a long-chain alkyl treatment, a fluorine treatment, or the like, as necessary, in order to enhance the releasability from the adhesive layer 4. Further, if necessary, it is also preferable to perform an ultraviolet ray preventing treatment so that the pressure-sensitive adhesive layer 4 does not react by exposure to unintended ultraviolet rays such as environmental ultraviolet rays. The thickness of the release film 5 is usually about 10 to 100 μm, preferably about 25 to 50 μm.
＜使用方法＞
次に、本発明の電子部品用テープ１の使用方法、すなわち半導体ウエハ６の加工方法について、説明する。
<How to use>
Next, a method of using the electronic component tape 1 of the present invention, that is, a method of processing the semiconductor wafer 6 will be described.
具体的には、まず、図２（Ａ）に示すように、電子部品用テープ１の剥離フィルム５を粘着剤層４から剥離し、図２（Ｂ）に示すように、半導体ウエハ６の回路パターン面（表面）に、粘着剤層４が貼合面となるように、電子部品用テープ１を貼合する貼合工程が実施される。このとき、５０〜１００℃の温度で加熱して貼合することが好まく、６０〜８０℃の温度で加熱して貼合することがより好ましい。これにより、電子部品用テープ１は、半導体ウエハ６表面の凹凸５１に十分に追従する。また、樹脂層３の流動性により半導体ウエハ６表面の凹凸５１が吸収されて電子部品用テープ１の表面には凹凸を抑制することができる。更に、後の電子部品用テープ１を半導体ウエハ６の側面に沿って切断する際に、カットバリやダマを抑制して切断することができる。貼合時の加熱は、半導体ウエハ６を保持するチャックテーブルや貼合ローラーの加温により実施される。 Specifically, first, as shown in FIG. 2A, the release film 5 of the electronic component tape 1 is peeled off from the adhesive layer 4, and as shown in FIG. A laminating step of laminating the electronic component tape 1 is performed such that the pressure-sensitive adhesive layer 4 becomes a laminating surface on the pattern surface (front surface). At this time, it is preferable to heat and bond at a temperature of 50 to 100 ° C, and it is more preferable to heat and bond at a temperature of 60 to 80 ° C. As a result, the electronic component tape 1 sufficiently follows the irregularities 51 on the surface of the semiconductor wafer 6. Further, the unevenness 51 on the surface of the semiconductor wafer 6 is absorbed by the fluidity of the resin layer 3 and the unevenness on the surface of the electronic component tape 1 can be suppressed. Further, when the electronic component tape 1 is cut along the side surface of the semiconductor wafer 6 later, cutting can be performed while suppressing cut burrs and lumps. Heating at the time of bonding is performed by heating a chuck table holding the semiconductor wafer 6 and a bonding roller.
貼合工程の後、チャックテーブルに保持された状態で、貼合機に付属されているカッター刃によって、半導体ウエハ６の側面に沿って、電子部品用テープ１を切断する切断工程が実施される。カット性を上げるため、カッター刃が７０〜１５０℃程度に加熱されることもある。 After the bonding step, a cutting step of cutting the electronic component tape 1 along the side surface of the semiconductor wafer 6 by a cutter blade attached to the bonding machine while being held on the chuck table is performed. . In order to improve the cutting property, the cutter blade may be heated to about 70 to 150 ° C.
電子部品用テープ１は、回路形成面に形成されているバンプなどの凹凸６１面の高低差すなわち回路形成面の段差が１０μｍ以上であるものに好適に用いられ、段差が１００μｍ以上であるものに更に好適に用いられ、段差が１８０μｍ以上であるものに特に工程に用いられる。 The electronic component tape 1 is preferably used for tapes having bumps or the like formed on the circuit forming surface, in which the height difference of the 61 surface, that is, the step of the circuit forming surface is 10 μm or more. It is more preferably used, and is particularly used in the step where the step is 180 μm or more.
その後、図２（Ｃ）に示すように、半導体ウエハ６の裏面すなわち回路パターンのない面側を半導体ウエハ６の厚さが所定の厚さ、例えば１０〜２００μｍになるまで、研削機７により研削する研削工程が実施される。その後、仕上げにドライポリッシュなどの研磨工程を実施してもよい。このとき、電子部品用テープ１は、半導体ウエハ６表面の凹凸５１に十分に追従しているため、シーページ抑制することができる。また、電子部品用テープ１の表面の凹凸が抑制されるため、半導体ウエハ６の裏面には研削機７からの力が均一にかかり半導体ウエハ６が厚さ精度よく研削・研磨され、ディンプルも抑制される。 Then, as shown in FIG. 2C, the back surface of the semiconductor wafer 6, that is, the side without the circuit pattern, is ground by the grinding machine 7 until the thickness of the semiconductor wafer 6 becomes a predetermined thickness, for example, 10 to 200 μm. A grinding step is performed. Thereafter, a polishing step such as dry polishing may be performed for finishing. At this time, since the electronic component tape 1 sufficiently follows the irregularities 51 on the surface of the semiconductor wafer 6, seapage can be suppressed. In addition, since the unevenness on the surface of the electronic component tape 1 is suppressed, the force from the grinder 7 is uniformly applied to the back surface of the semiconductor wafer 6, and the semiconductor wafer 6 is ground and polished with good thickness accuracy, and dimples are also suppressed. Is done.
その後、電子部品用テープ１が光重合性の場合は、エネルギー線を照射して粘着剤層４の粘着力を低下させ、半導体ウエハ６から電子部品用テープ１を剥離する。なお、エネルギー線を照射した後電子部品用テープ１を剥離する前に、半導体ウエハ６の回路パターンのない研削・研磨した面側に、ダイシング・ダイボンディングフィルム（図示しない）を貼合してもよい。 After that, when the electronic component tape 1 is photopolymerizable, the adhesive force of the adhesive layer 4 is reduced by irradiating energy rays, and the electronic component tape 1 is separated from the semiconductor wafer 6. It should be noted that a dicing die bonding film (not shown) may be attached to the ground and polished surface side of the semiconductor wafer 6 without a circuit pattern before the electronic component tape 1 is peeled off after the irradiation with the energy rays. Good.
なお、本実施の形態においては、樹脂層の上面に粘着剤層４を設けるようにしたが、粘着剤層４を設ける必要がなければ設けなくてもよい。この場合、樹脂層に直接半導体ウエハ６を貼合して半導体ウエハ６の裏面を研削・研磨し、研削・研磨が終了した後、半導体ウエハ６から電子部品用テープ１を剥離する。 In the present embodiment, the pressure-sensitive adhesive layer 4 is provided on the upper surface of the resin layer. However, the pressure-sensitive adhesive layer 4 may not be provided if it is not necessary. In this case, the semiconductor wafer 6 is directly bonded to the resin layer, and the back surface of the semiconductor wafer 6 is ground and polished. After the grinding and polishing are completed, the electronic component tape 1 is peeled off from the semiconductor wafer 6.
なお、本実施の形態においては、電子部品用テープ１を半導体ウエハ６の研削・研磨に使用する例について説明したが、これに限定されず、表面に凹凸を有する電子部品のダイシングや搬送用等の表面保護の用途に用いることができる。電子部品としては、半導体ウエハ６の他に、例えば段差が２００μｍ程度の凸凹を表面に有するガラスや、高さ２００μｍ程度のバンプを有するパッケージ等が挙げられる。 In the present embodiment, an example in which the electronic component tape 1 is used for grinding and polishing of the semiconductor wafer 6 has been described. However, the present invention is not limited to this. For example, for dicing or transporting an electronic component having an uneven surface. Can be used for surface protection. As the electronic component, in addition to the semiconductor wafer 6, for example, glass having unevenness on the surface with a step of about 200 μm, a package having a bump with a height of about 200 μm, and the like can be given.
＜実施例＞
以下、本発明を実施例に基づきさらに詳細に説明するが、本発明はこれら実施例に限定されるものではない。
<Example>
Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples.
〔粘着剤層組成物の調製〕
［粘着剤層組成物Ａ］
２−エチルヘキシルアクリレート８０質量部、２−ヒドロキシアクリレート１５質量部、メタクリル酸５質量部からなる共重合体１００質量部に対して、コロネートＬ（商品名、日本ポリウレタン工業株式会社製）１．０質量部を加えて混合して、粘着剤組成物Ａを得た。
(Preparation of pressure-sensitive adhesive layer composition)
[Adhesive layer composition A]
1.0 part by mass of Coronate L (trade name, manufactured by Nippon Polyurethane Industry Co., Ltd.) based on 100 parts by mass of a copolymer consisting of 80 parts by mass of 2-ethylhexyl acrylate, 15 parts by mass of 2-hydroxyacrylate, and 5 parts by mass of methacrylic acid The mixture was added and mixed to obtain PSA composition A.
〔樹脂層を構成する樹脂の準備〕
［樹脂Ｂ１］
樹脂Ｂ１として、ブチルアクリレート含有率が３０％、重量平均分子量が１０００００のエチレン−ブチルアクレート共重合体（ＥＢＡ）を準備した。樹脂Ｂ１の７０℃における貯蔵弾性率は９．０×１０4Ｐａ、ＭＦＲは３０ｇ/１０ｍｉｎ、分子量分布は５．８であった。
[Preparation of resin constituting resin layer]
[Resin B1]
As the resin B1, an ethylene-butyl acrylate copolymer (EBA) having a butyl acrylate content of 30% and a weight average molecular weight of 100,000 was prepared. The storage elastic modulus at 70 ° C. of the resin B1 was 9.0 × 10 4 Pa, the MFR was 30 g / 10 min, and the molecular weight distribution was 5.8.
［樹脂Ｂ２］
樹脂Ｂ２として、酢酸ビニル含有率が４０％、重量平均分子量が４００００のエチレン−酢酸ビニル共重合体（ＥＶＡ）を準備した。樹脂Ｂ２の７０℃における貯蔵弾性率は３．７×１０4Ｐａ、ＭＦＲは７０ｇ/１０ｍｉｎ、分子量分布は６．５であった。
[Resin B2]
As the resin B2, an ethylene-vinyl acetate copolymer (EVA) having a vinyl acetate content of 40% and a weight average molecular weight of 40,000 was prepared. The storage elastic modulus at 70 ° C. of the resin B2 was 3.7 × 10 4 Pa, the MFR was 70 g / 10 min, and the molecular weight distribution was 6.5.
［樹脂Ｂ３］
樹脂Ｂ３として、密度が０．８９、重量平均分子量が４００００のαオレフィン樹脂を準備した。樹脂Ｂ３の７０℃における貯蔵弾性率は１．６×１０5Ｐａ、ＭＦＲは４０ｇ/１０ｍｉｎ、分子量分布は２．４であった。
[Resin B3]
As the resin B3, an α-olefin resin having a density of 0.89 and a weight average molecular weight of 40,000 was prepared. The storage elastic modulus at 70 ° C. of the resin B3 was 1.6 × 10 5 Pa, the MFR was 40 g / 10 min, and the molecular weight distribution was 2.4.
［樹脂Ｂ４］
樹脂Ｂ４として、密度が０．８８、重量平均分子量が３５０００のαオレフィン樹脂を準備した。樹脂Ｂ４の７０℃における貯蔵弾性率は１．０×１０5Ｐａ、ＭＦＲは１５ｇ/１０ｍｉｎ、分子量分布は１．８であった。
[Resin B4]
As the resin B4, an α-olefin resin having a density of 0.88 and a weight average molecular weight of 35,000 was prepared. The storage elastic modulus at 70 ° C. of the resin B4 was 1.0 × 10 5 Pa, the MFR was 15 g / 10 min, and the molecular weight distribution was 1.8.
［樹脂Ｂ５］
樹脂Ｂ５として、密度が０．９０、重量平均分子量が４００００のαオレフィン樹脂を準備した。樹脂Ｂ５の７０℃における貯蔵弾性率は２．２×１０5Ｐａ、ＭＦＲは４０ｇ/１０ｍｉｎ、分子量分布は２．０であった。
[Resin B5]
As the resin B5, an α-olefin resin having a density of 0.90 and a weight average molecular weight of 40,000 was prepared. The storage elastic modulus at 70 ° C. of the resin B5 was 2.2 × 10 5 Pa, the MFR was 40 g / 10 min, and the molecular weight distribution was 2.0.
［樹脂Ｂ６］
樹脂Ｂ６として、メチルアクリレート含有率が２２％、重量平均分子量が２０００００のエチレンーメチルアクリレート共重合体（ＥＭＡ）を準備した。樹脂Ｂ６の７０℃における貯蔵弾性率は１．２×１０5Ｐａ、ＭＦＲは８ｇ/１０ｍｉｎ、分子量分布は７．１であった。
[Resin B6]
As the resin B6, an ethylene-methyl acrylate copolymer (EMA) having a methyl acrylate content of 22% and a weight average molecular weight of 200,000 was prepared. The storage elastic modulus at 70 ° C. of the resin B6 was 1.2 × 10 5 Pa, the MFR was 8 g / 10 min, and the molecular weight distribution was 7.1.
［樹脂Ｂ７］
樹脂Ｂ７として、密度が０．９０、重量平均分子量が３０００００のαオレフィン樹脂を準備した。樹脂Ｂ５の７０℃における貯蔵弾性率は３.３×１０5Ｐａ、ＭＦＲは１８ｇ/１０ｍｉｎ、分子量分布は２．１であった。
[Resin B7]
As the resin B7, an α-olefin resin having a density of 0.90 and a weight average molecular weight of 300,000 was prepared. The storage elastic modulus at 70 ° C. of the resin B5 was 3.3 × 10 5 Pa, the MFR was 18 g / 10 min, and the molecular weight distribution was 2.1.
〔電子部品用テープの作製〕
［実施例１］
基材フィルムとしての厚さ５０μｍのポリエチレンテレフタレート（ＰＥＴ）フィルム上に、樹脂Ｂ１を厚さ３００μｍで押出して樹脂層を形成し、樹脂層側にコロナ処理を施した。次に、厚さ４０μｍのポリエチレンテレフタレート（ＰＥＴ）のセパレータ上に、乾燥後の膜厚が２０μｍとなるように粘着剤組成物Ａを塗布し、乾燥させて粘着剤層を得た。その後、粘着剤層を上記樹脂層面と貼り合わせて転写し、厚さ３７０μｍの実施例１に係る電子部品用テープを得た。
[Production of tape for electronic parts]
[Example 1]
A resin layer was formed by extruding the resin B1 at a thickness of 300 μm on a polyethylene terephthalate (PET) film having a thickness of 50 μm as a base film, and a corona treatment was applied to the resin layer side. Next, the pressure-sensitive adhesive composition A was applied onto a 40 μm-thick polyethylene terephthalate (PET) separator so that the film thickness after drying was 20 μm, and dried to obtain a pressure-sensitive adhesive layer. Thereafter, the pressure-sensitive adhesive layer was bonded to the surface of the resin layer and transferred to obtain a tape for electronic components according to Example 1 having a thickness of 370 μm.
［実施例２］
基材フィルムとしての厚さ５０μｍのポリエチレンテレフタレート（ＰＥＴ）フィルム上に、樹脂Ｂ２を厚さ３００μｍで押出して樹脂層を形成し、樹脂層側にコロナ処理を施した。次に、厚さ４０μｍのポリエチレンテレフタレート（ＰＥＴ）のセパレータ上に、乾燥後の膜厚が２０μｍとなるように粘着剤組成物Ａを塗布し、乾燥させて粘着剤層を得た。その後、粘着剤層を上記樹脂層面と貼り合わせて転写し、厚さ３７０μｍの実施例２に係る電子部品用テープを得た。
[Example 2]
A resin layer was formed by extruding the resin B2 at a thickness of 300 μm on a polyethylene terephthalate (PET) film having a thickness of 50 μm as a base film, and a corona treatment was applied to the resin layer side. Next, the pressure-sensitive adhesive composition A was applied onto a 40 μm-thick polyethylene terephthalate (PET) separator so that the film thickness after drying was 20 μm, and dried to obtain a pressure-sensitive adhesive layer. Thereafter, the pressure-sensitive adhesive layer was adhered to the resin layer surface and transferred to obtain an electronic component tape according to Example 2 having a thickness of 370 μm.
［実施例３］
基材フィルムとしての厚さ５０μｍのポリエチレンテレフタレート（ＰＥＴ）フィルム上に、樹脂Ｂ３を厚さ３００μｍで押出して樹脂層を形成し、樹脂層側にコロナ処理を施した。次に、厚さ４０μｍのポリエチレンテレフタレート（ＰＥＴ）のセパレータ上に、乾燥後の膜厚が２０μｍとなるように粘着剤組成物Ａを塗布し、乾燥させて粘着剤層を得た。その後、粘着剤層を上記樹脂層面と貼り合わせて転写し、厚さ３７０μｍの実施例３に係る電子部品用テープを得た。
[Example 3]
A resin layer was formed by extruding the resin B3 at a thickness of 300 μm on a 50 μm-thick polyethylene terephthalate (PET) film as a base film, and a corona treatment was applied to the resin layer side. Next, the pressure-sensitive adhesive composition A was applied onto a 40 μm-thick polyethylene terephthalate (PET) separator so that the film thickness after drying was 20 μm, and dried to obtain a pressure-sensitive adhesive layer. Thereafter, the pressure-sensitive adhesive layer was bonded to the resin layer surface and transferred to obtain a tape for electronic components according to Example 3 having a thickness of 370 μm.
［実施例４］
基材フィルムとしての厚さ５０μｍのポリエチレンテレフタレート（ＰＥＴ）フィルム上に、樹脂Ｂ４を厚さ３００μｍで押出して樹脂層を形成し、樹脂層側にコロナ処理を施した。次に、厚さ４０μｍのポリエチレンテレフタレート（ＰＥＴ）のセパレータ上に、乾燥後の膜厚が２０μｍとなるように粘着剤組成物Ａを塗布し、乾燥させて粘着剤層を得た。その後、粘着剤層を上記樹脂層面と貼り合わせて転写し、厚さ３７０μｍの実施例４に係る電子部品用テープを得た。
[Example 4]
A resin layer was formed by extruding resin B4 at a thickness of 300 μm on a 50 μm-thick polyethylene terephthalate (PET) film as a base film, and a corona treatment was applied to the resin layer side. Next, the pressure-sensitive adhesive composition A was applied onto a 40 μm-thick polyethylene terephthalate (PET) separator so that the film thickness after drying was 20 μm, and dried to obtain a pressure-sensitive adhesive layer. Thereafter, the pressure-sensitive adhesive layer was bonded to the resin layer surface and transferred to obtain a tape for electronic components according to Example 4 having a thickness of 370 μm.
［比較例１］
基材フィルムとしての厚さ５０μｍのポリエチレンテレフタレート（ＰＥＴ）フィルム上に、樹脂Ｂ５を厚さ３００μｍで押出して樹脂層を形成し、樹脂層側にコロナ処理を施した。次に、厚さ４０μｍのポリエチレンテレフタレート（ＰＥＴ）のセパレータ上に、乾燥後の膜厚が２０μｍとなるように粘着剤組成物Ａを塗布し、乾燥させて粘着剤層を得た。その後、粘着剤層を上記樹脂層面と貼り合わせて転写し、厚さ３７０μｍの比較例１に係る電子部品用テープを得た。
[Comparative Example 1]
A resin layer was formed by extruding the resin B5 at a thickness of 300 μm on a polyethylene terephthalate (PET) film having a thickness of 50 μm as a base film, and a corona treatment was applied to the resin layer side. Next, the pressure-sensitive adhesive composition A was applied onto a 40 μm-thick polyethylene terephthalate (PET) separator so that the film thickness after drying was 20 μm, and dried to obtain a pressure-sensitive adhesive layer. Thereafter, the pressure-sensitive adhesive layer was adhered to the resin layer surface and transferred to obtain an electronic component tape according to Comparative Example 1 having a thickness of 370 μm.
［比較例２］
基材フィルムとしての厚さ５０μｍのポリエチレンテレフタレート（ＰＥＴ）フィルム上に、樹脂Ｂ６を厚さ３００μｍで押出して樹脂層を形成し、樹脂層側にコロナ処理を施した。次に、厚さ４０μｍのポリエチレンテレフタレート（ＰＥＴ）のセパレータ上に、乾燥後の膜厚が２０μｍとなるように粘着剤組成物Ａを塗布し、乾燥させて粘着剤層を得た。その後、粘着剤層を上記樹脂層面と貼り合わせて転写し、厚さ３７０μｍの比較例２に係る電子部品用テープを得た。
[Comparative Example 2]
A resin layer was formed by extruding the resin B6 at a thickness of 300 μm on a polyethylene terephthalate (PET) film having a thickness of 50 μm as a base film, and a corona treatment was applied to the resin layer side. Next, the pressure-sensitive adhesive composition A was applied onto a 40 μm-thick polyethylene terephthalate (PET) separator so that the film thickness after drying was 20 μm, and dried to obtain a pressure-sensitive adhesive layer. Thereafter, the pressure-sensitive adhesive layer was bonded to the resin layer surface and transferred to obtain an electronic component tape of Comparative Example 2 having a thickness of 370 μm.
［比較例３］
基材フィルムとしての厚さ５０μｍのポリエチレンテレフタレート（ＰＥＴ）フィルム上に、樹脂Ｂ７を厚さ３００μｍで押出して樹脂層を形成し、樹脂層側にコロナ処理を施した。次に、厚さ４０μｍのポリエチレンテレフタレート（ＰＥＴ）のセパレータ上に、乾燥後の膜厚が２０μｍとなるように粘着剤組成物Ａを塗布し、乾燥させて粘着剤層を得た。その後、粘着剤層を上記樹脂層面と貼り合わせて転写し、厚さ３７０μｍの比較例３に係る電子部品用テープを得た。
[Comparative Example 3]
A resin layer was formed by extruding the resin B7 at a thickness of 300 μm on a polyethylene terephthalate (PET) film having a thickness of 50 μm as a base film, and a corona treatment was applied to the resin layer side. Next, the pressure-sensitive adhesive composition A was applied onto a 40 μm-thick polyethylene terephthalate (PET) separator so that the film thickness after drying was 20 μm, and dried to obtain a pressure-sensitive adhesive layer. Thereafter, the pressure-sensitive adhesive layer was bonded to the resin layer surface and transferred to obtain a tape for electronic components according to Comparative Example 3 having a thickness of 370 μm.
［特性評価試験］
上記実施例及び比較例の電子部品用テープについて、特性評価試験を下記のように行った。その結果を表１に示す。
[Characteristic evaluation test]
With respect to the tapes for electronic parts of the above Examples and Comparative Examples, a property evaluation test was performed as follows. Table 1 shows the results.
（１）カットバリ評価
貼り付け機として日東精機株式会社製のＤＲ８５００ＩＩＩ（商品名）を用いて、半導体ウエハに実施例及び比較例に係る電子部品用テープを貼合温度７０℃で貼合した。半導体ウエハとしては、表面に高さ２００μｍ、ピッチ４００μｍのバンプを有し、幅１００μｍのスクライブでチップサイズが５ｍｍ角の８インチ径の半導体ウエハを用いた。貼合後、半導体ウエハの周面に沿って電子部品用テープを切断した。その後、半導体ウエハの側面（周面）を目視にて観察し、樹脂層のカットバリが確認された場合には許容品として△、確認されなかったものは良品として〇で評価した。
(1) Cut burr evaluation Using a DR8500III (trade name) manufactured by Nitto Seiki Co., Ltd. as a bonding machine, electronic component tapes according to Examples and Comparative Examples were bonded to a semiconductor wafer at a bonding temperature of 70 ° C. As the semiconductor wafer, an 8-inch diameter semiconductor wafer having scribes with a height of 200 μm and a pitch of 400 μm on the surface, a scribe of 100 μm width, and a chip size of 5 mm square was used. After bonding, the electronic component tape was cut along the peripheral surface of the semiconductor wafer. Thereafter, the side surface (peripheral surface) of the semiconductor wafer was visually observed, and when cut burr of the resin layer was confirmed, it was evaluated as Δ as an acceptable product and as unacceptable product as Δ.
（２）追従性の評価
電子部品用テープを半導体ウエハに貼合してから２２時間経過後、電子部品用テープの半導体ウエハに対する追従性を目視にて観察した。電子部品用テープの半導体ウエハの貼合面からのバンプ部分での浮きが確認されたものは不良品として×、スクライブ部分のみの浮きが確認されたものは許容品として△、浮きが確認されなかったものは良品として○で評価した。
(2) Evaluation of Followability Twenty-two hours after bonding the electronic component tape to the semiconductor wafer, the followability of the electronic component tape to the semiconductor wafer was visually observed. If the floating of the electronic component tape at the bump portion from the bonding surface of the semiconductor wafer was confirmed, the product was evaluated as defective. × The floating of only the scribed portion was confirmed as an acceptable product. Δ, no floating was observed. The product was evaluated as good by で.
（３）厚さ精度（ＴＴＶ）の評価
電子部品用テープを半導体ウエハに貼合してから２４時間経過後、株式会社ディスコ製ＤＦＧ８７６０（商品名）を用いて、電子部品用テープを貼合した半導体ウエハを２枚ずつ、１００μｍの厚さまで研削加工した。その後、走査型電子顕微鏡（ＳＥＭＤＥＸ、株式会社日立ハイテクノロジーズ製）を用いて、厚さ精度（ＴＴＶ）を測定した。ＴＴＶは、半導体ウエハ中の任意の５つのチップについて、任意の１０ｍｍ角の範囲で測定し、その平均値を求めた。ＴＴＶが１０μｍ以上のものを不良品として×、ＴＴＶが５μｍ以上１０μｍ未満のものを許容品として△、ＴＴＶが５μｍ未満のものを良品として○で評価した。なお、上述の追従性の評価において、電子部品用テープの半導体ウエハの貼合面からの浮きが確認されたものについては、半導体ウエハの裏面を研削するとウエハや装置を破損させるおそれがあるため、研削加工は実施しなかった。
(3) Evaluation of Thickness Accuracy (TTV) Twenty-four hours after the tape for electronic components was bonded to the semiconductor wafer, the tape for electronic components was bonded using DFG8760 (trade name) manufactured by Disco Corporation. Two semiconductor wafers were ground to a thickness of 100 μm. Thereafter, the thickness accuracy (TTV) was measured using a scanning electron microscope (SEMDEX, manufactured by Hitachi High-Technologies Corporation). TTV was measured in an arbitrary range of 10 mm square for any five chips in a semiconductor wafer, and the average value was obtained. Those having a TTV of 10 μm or more were evaluated as poor, those having a TTV of 5 μm or more and less than 10 μm were evaluated as acceptable, and those having a TTV of less than 5 μm were evaluated as good and evaluated as ○. In the above-described evaluation of the follow-up performance, for those in which the floating of the electronic component tape from the bonding surface of the semiconductor wafer has been confirmed, grinding the back surface of the semiconductor wafer may damage the wafer or device, No grinding was performed.
（４）エッジクラックの評価
半導体ウエハの研削後に、目視にて割れを観察し半導体ウエハに１枚でも割れが確認されたものを不良品として×、目視では割れが確認されないものの光学顕微鏡で観察して半導体ウエハ1枚あたり２個以上のエッジクラックが確認されたものを許容品として△、目視で割れが確認されず光学顕微鏡での観察でエッジクラックが１個以下であったものを良品として〇で評価した。
(4) Evaluation of edge cracks After grinding the semiconductor wafer, cracks were visually observed, and any one of the semiconductor wafers showing cracks was evaluated as defective, and was observed with an optical microscope although no cracks were found visually. A semiconductor wafer in which two or more edge cracks were confirmed per semiconductor wafer was regarded as an acceptable product. A wafer in which no crack was visually observed and one or less edge cracks were observed by an optical microscope was regarded as a non-defective product. Was evaluated.
（５）ダスト侵入の評価
半導体ウエハの研削後に、電子部品用テープを半導体ウエハから剥離し、半導体ウエハの端部を光学顕微鏡で観察して研削ダストの有無を確認した。半導体ウエハに研削ダストが付着していたものを不良品として×、付着していなかったものを良品として○で評価した。
(5) Evaluation of Dust Intrusion After grinding the semiconductor wafer, the tape for electronic components was peeled off from the semiconductor wafer, and the end of the semiconductor wafer was observed with an optical microscope to confirm the presence or absence of grinding dust. A semiconductor wafer to which grinding dust had adhered was evaluated as poor, and a non-adhered wafer was evaluated as good, as good.
一方、比較例１は、樹脂層の貯蔵弾性率が２２００００Ｐａと請求項１に規定の２０００００Ｐａを超えるため、半導体ウエハを研削する際に電子部品用テープが半導体ウエハに追従しきれず、ダスト侵入の評価において劣る結果となった。比較例２は、樹脂層のメルトフローレートが８ｇ/１０ｍｉｎと請求項１に規定の１０ｇ/１０ｍｉｎ未満であるため、電子部品用テープが半導体ウエハ表面の凹凸に追従したときに、電子部品用テープの表面に凹凸が生じたため、ＴＴＶの評価において劣る結果となった。また、表面の凹凸により、研削機のアライメントテーブルにて吸着エラーが発生し自動加工ができなったため、マニュアル搬送にて加工を行った。比較例３は、樹脂層の貯蔵弾性率が３３００００Ｐａと請求項１に規定の２０００００Ｐａを大幅に超えるため、電子部品用テープが半導体ウエハに追従しきれず、半導体ウエハを研削する前に半導体ウエハから浮いてしまい、追従性の評価において著しく劣る結果となり、加工するとウエハの破損やそれにより研削機へダメージを与える可能性があったので、その後の加工を行わなかった。 On the other hand, in Comparative Example 1, since the storage elastic modulus of the resin layer was 220,000 Pa, which exceeds the specified 200,000 Pa, the tape for electronic components could not completely follow the semiconductor wafer when grinding the semiconductor wafer, and the dust intrusion was evaluated. Inferior results. In Comparative Example 2, since the melt flow rate of the resin layer was 8 g / 10 min and less than 10 g / 10 min specified in Claim 1, when the electronic component tape followed irregularities on the surface of the semiconductor wafer, the electronic component tape The surface was uneven, resulting in poor TTV evaluation. In addition, due to irregularities on the surface, an adsorption error occurred on the alignment table of the grinding machine, and automatic processing could not be performed. In Comparative Example 3, since the storage elastic modulus of the resin layer was 330,000 Pa, which greatly exceeded 200,000 Pa as defined in claim 1, the electronic component tape could not follow the semiconductor wafer and floated from the semiconductor wafer before grinding the semiconductor wafer. As a result, the followability was remarkably inferior to the evaluation. If the processing was performed, there was a possibility that the wafer would be damaged and the grinding machine might be damaged, so that the subsequent processing was not performed.
１：電子部品用テープ
２：基材フィルム
３：樹脂層
４：粘着剤層
５：剥離フィルム
６：半導体ウエハ
６１：凹凸
７：研削機
1: Tape for electronic components 2: Base film 3: Resin layer 4: Adhesive layer 5: Release film 6: Semiconductor wafer 61: Unevenness 7: Grinding machine
Claims (5)
前記樹脂層は、貯蔵弾性が６０℃〜８０℃のいずれかの温度において１００００〜２０００００Ｐａであり、メルトフローレートが１０〜２００ｇ/１０ｍｉｎであり、
前記樹脂層は、分子量分布Ｍｗ／Ｍｎが１．０〜３．０であり、
電子部品に貼合して使用した後に、前記樹脂層が前記電子部品から除去されることを特徴とする電子部品用テープ。 Having at least one resin layer,
The resin layer is 10000~200000Pa in any one of temperature of the storage elasticity 60 ° C. to 80 ° C., a melt flow rate of Ri 10 to 200 g / 10min der,
The resin layer has a molecular weight distribution Mw / Mn of 1.0 to 3.0,
After using pasted to the electronic component, the electronic component tapes, wherein Rukoto the resin layer is removed from the electronic component.
前記貼合工程の後に、前記半導体ウエハの回路形成面とは反対側の面を研削する研削工程とを有することを特徴とする電子部品の加工方法。 A grinding step of grinding a surface of the semiconductor wafer opposite to a circuit formation surface after the bonding step.
前記切断工程の後に、前記研削工程を実施することを特徴とする請求項４に記載の電子部品の加工方法。
After the bonding step, the electronic component tape has a cutting step of cutting according to the size of the semiconductor wafer,
The method according to claim 4, wherein the grinding step is performed after the cutting step .
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| PCT/JP2020/012848 WO2020209044A1 (en) | 2019-04-08 | 2020-03-24 | Tape for electronic component and method of processing electronic component |
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