JP6674628B2 - 洗浄剤組成物及び薄型基板の製造方法 - Google Patents
洗浄剤組成物及び薄型基板の製造方法 Download PDFInfo
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- JP6674628B2 JP6674628B2 JP2016088020A JP2016088020A JP6674628B2 JP 6674628 B2 JP6674628 B2 JP 6674628B2 JP 2016088020 A JP2016088020 A JP 2016088020A JP 2016088020 A JP2016088020 A JP 2016088020A JP 6674628 B2 JP6674628 B2 JP 6674628B2
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- cleaning composition
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- 239000000758 substrate Substances 0.000 title claims description 206
- 239000000203 mixture Substances 0.000 title claims description 121
- 239000003599 detergent Substances 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000004140 cleaning Methods 0.000 claims description 85
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 60
- 229910052710 silicon Inorganic materials 0.000 claims description 59
- 239000004065 semiconductor Substances 0.000 claims description 58
- 239000010703 silicon Substances 0.000 claims description 56
- 239000000853 adhesive Substances 0.000 claims description 53
- 230000001070 adhesive effect Effects 0.000 claims description 53
- 229920001296 polysiloxane Polymers 0.000 claims description 41
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 claims description 38
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- SGVYKUFIHHTIFL-UHFFFAOYSA-N 2-methylnonane Chemical compound CCCCCCCC(C)C SGVYKUFIHHTIFL-UHFFFAOYSA-N 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- 239000012790 adhesive layer Substances 0.000 claims description 21
- 125000004432 carbon atom Chemical group C* 0.000 claims description 21
- GTJOHISYCKPIMT-UHFFFAOYSA-N 2-methylundecane Chemical compound CCCCCCCCCC(C)C GTJOHISYCKPIMT-UHFFFAOYSA-N 0.000 claims description 16
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 16
- VKPSKYDESGTTFR-UHFFFAOYSA-N isododecane Natural products CC(C)(C)CC(C)CC(C)(C)C VKPSKYDESGTTFR-UHFFFAOYSA-N 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- CFJYNSNXFXLKNS-UHFFFAOYSA-N p-menthane Chemical compound CC(C)C1CCC(C)CC1 CFJYNSNXFXLKNS-UHFFFAOYSA-N 0.000 claims description 10
- 239000011734 sodium Substances 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000003960 organic solvent Substances 0.000 claims description 9
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 8
- 150000002430 hydrocarbons Chemical group 0.000 claims description 8
- ZUBZATZOEPUUQF-UHFFFAOYSA-N isononane Chemical compound CCCCCCC(C)C ZUBZATZOEPUUQF-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910052700 potassium Inorganic materials 0.000 claims description 7
- 229910052708 sodium Inorganic materials 0.000 claims description 7
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 6
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 6
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims description 6
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 6
- -1 glycol dialkyl ether Chemical class 0.000 claims description 6
- DCAYPVUWAIABOU-UHFFFAOYSA-N hexadecane Chemical compound CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 claims description 6
- 239000011591 potassium Substances 0.000 claims description 6
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 claims description 6
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 claims description 6
- 229930004008 p-menthane Natural products 0.000 claims description 5
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 5
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 claims description 4
- 230000018044 dehydration Effects 0.000 claims description 4
- 238000006297 dehydration reaction Methods 0.000 claims description 4
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 claims description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 63
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 24
- 238000001816 cooling Methods 0.000 description 22
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 13
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 description 9
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 8
- 239000004205 dimethyl polysiloxane Substances 0.000 description 8
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 8
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 8
- 238000005406 washing Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000013464 silicone adhesive Substances 0.000 description 6
- 229910004283 SiO 4 Inorganic materials 0.000 description 5
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 239000012778 molding material Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 4
- QPRQEDXDYOZYLA-UHFFFAOYSA-N 2-methylbutan-1-ol Chemical compound CCC(C)CO QPRQEDXDYOZYLA-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- 238000006482 condensation reaction Methods 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- PFNHSEQQEPMLNI-UHFFFAOYSA-N 2-methyl-1-pentanol Chemical compound CCCC(C)CO PFNHSEQQEPMLNI-UHFFFAOYSA-N 0.000 description 2
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methylbutan-2-ol Chemical compound CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 2
- MXLMTQWGSQIYOW-UHFFFAOYSA-N 3-methyl-2-butanol Chemical compound CC(C)C(C)O MXLMTQWGSQIYOW-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 125000000753 cycloalkyl group Chemical group 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 2
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- KPSSIOMAKSHJJG-UHFFFAOYSA-N neopentyl alcohol Chemical compound CC(C)(C)CO KPSSIOMAKSHJJG-UHFFFAOYSA-N 0.000 description 2
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 125000003944 tolyl group Chemical group 0.000 description 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- TZYRSLHNPKPEFV-UHFFFAOYSA-N 2-ethyl-1-butanol Chemical compound CCC(CC)CO TZYRSLHNPKPEFV-UHFFFAOYSA-N 0.000 description 1
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 1
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229940035429 isobutyl alcohol Drugs 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 150000003112 potassium compounds Chemical class 0.000 description 1
- BYTCDABWEGFPLT-UHFFFAOYSA-L potassium;sodium;dihydroxide Chemical compound [OH-].[OH-].[Na+].[K+] BYTCDABWEGFPLT-UHFFFAOYSA-L 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 150000003388 sodium compounds Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/18—Hydrocarbons
- C11D3/181—Hydrocarbons linear
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2006—Monohydric alcohols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2006—Monohydric alcohols
- C11D3/201—Monohydric alcohols linear
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- C—CHEMISTRY; METALLURGY
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Description
〔1〕
シリコン半導体薄型基板表面のシリコーン系接着剤除去用の洗浄剤組成物であって、
(A)炭素数5〜20の脂肪族炭化水素又は炭素数5〜20のジアルキレングリコールジアルキルエーテルである有機溶媒90.0〜99.9質量%、
(B)炭素数3〜6のアルコール0.1〜10.0質量%、及び
(C)水酸化ナトリウム及び/又は水酸化カリウム
を含有し、かつ、洗浄剤組成物中には、(A)、(B)成分の総量100質量部に対して(C)成分のナトリウム及び/又はカリウムを濃度20〜300ppm(0.002〜0.03質量部)含有し、溶媒として水を含まないことを特徴とする洗浄剤組成物。
〔2〕
更に、第四級アンモニウム塩を含有する〔1〕記載の洗浄剤組成物。
〔3〕
(A)成分の脂肪族炭化水素が、オクタン、ノナン、デカン、ウンデカン、ドデカン、テトラデカン、ヘキサデカン、イソオクタン、イソノナン、イソデカン、イソドデカン、アルキルシクロヘキサン及びp−メンタンの群から選ばれる1種又は2種以上である〔1〕又は〔2〕のいずれかに記載の洗浄剤組成物。
〔4〕
洗浄剤組成物を用いて洗浄された基板の水接触角が100°未満となる〔1〕〜〔3〕のいずれかに記載の洗浄剤組成物。
〔5〕
下記(a)〜(d)工程、
(a)基板又は支持基板の上に、接着剤組成物により接着層を形成し、該接着層を介して、上記基板と上記支持基板とを接合する接合工程、
(b)上記支持基板に接合された上記基板を加工する加工工程、
(c)上記加工後の上記基板を上記支持基板から剥離する剥離工程、及び
(d)上記剥離後の基板に残存する接着層を、〔1〕〜〔4〕のいずれかに記載の洗浄剤組成物により洗浄除去する洗浄除去工程
を含むことを特徴とする薄型基板の製造方法。
〔6〕
上記接着剤組成物が、シリコーン化合物を含有する接着剤組成物である〔5〕記載の薄型基板の製造方法。
〔7〕
上記シリコーン化合物がケイ素原子に結合する水酸基を2個以上有する直鎖状又は分岐状のオルガノポリシロキサンと、R3SiO2単位(Rは1価炭化水素基)とSiO2単位とを含有し、かつ水酸基を含有するオルガノポリシロキサンレジンとの(部分)脱水縮合物である〔6〕記載の薄型基板の製造方法。
本発明の洗浄剤組成物は、シリコン半導体基板等の各種基板の表面の洗浄のために用いられるものであり、(A)有機溶媒(但し、炭素数3〜6のアルコールを除く。)90.0〜99.9質量%、及び(B)炭素数3〜6のアルコール0.1〜10.0質量%を含有し、かつ、洗浄剤組成物中には、(A)、(B)成分の総量100質量部に対して(C)ナトリウム及び/又はカリウムを濃度20〜300ppm(0.002〜0.03質量部)含有してなる組成物である。
(a)基板又は支持基板の上に、接着剤組成物により接着層を形成し、該接着層を介して、上記基板と上記支持基板とを接合する接合工程、
(b)上記支持基板に接合された上記基板を加工する加工工程、
(c)上記加工後の上記基板を上記支持基板から剥離する剥離工程、及び
(d)上記剥離後の基板に残存する接着層を洗浄剤組成物により洗浄除去する洗浄除去工程
を含む製造方法において、上記(d)の洗浄除去工程で本発明の洗浄剤組成物が使用される。
このようにして得られた(部分)脱水縮合物は、その重量平均分子量が200,000〜2,000,000、特に350,000〜1,500,000であることが好ましい。
4つ口フラスコに、分子鎖両末端が水酸基で封鎖された生ゴム状のジメチルポリシロキサン(一般式(1)において、nは9,000)であって、その30質量%トルエン溶液の25℃における粘度が98,000mPa・sであるジメチルポリシロキサン90質量部と、(CH3)3SiO1/2単位0.75モルとSiO4/2単位1モルの割合からなり、かつ固形分100g中に1.0モル%の水酸基を含む重量平均分子量5,000のメチルポリシロキサンレジン10質量部とを、トルエン900質量部に溶解した。得られた溶液に、28質量%のアンモニア水を1質量部添加し、室温にて24時間撹拌して縮合反応させた。次いで、減圧状態で180℃に加熱し、トルエン、縮合水、アンモニア等を除去させて、固形化された部分脱水縮合物を得た。この部分脱水縮合物100質量部に、トルエン900質量部を加えて溶解させた。この溶液にヘキサメチルジシラザン20質量部を加え、130℃にて3時間撹拌して残存する水酸基を封鎖した。次いで、減圧状態で180℃に加熱し、溶剤等を除去させて、固形化された非反応性部分脱水縮合物を得た。更に、上記非反応性部分脱水縮合物100質量部にヘキサン900質量部を加えて溶解させた後、これを2,000質量部のアセトン中に投入し、析出した樹脂を回収して、その後、真空下でヘキサン等を除去して、分子量740以下の低分子量成分が0.05質量%である、重量平均分子量900,000のジメチルポリシロキサン重合体を得た。上記ジメチルポリシロキサン重合体10質量部とノナン90質量部からなる「シリコーン化合物ノナン溶液接着剤No.1」を得た。
4つ口フラスコに分子鎖両末端が水酸基で封鎖された生ゴム状のジメチルポリシロキサン(一般式(1)において、nは9,000)であって、その30質量%トルエン溶液の25℃における粘度が98,000mPa・sであるジメチルポリシロキサン95質量部と、(CH3)3SiO1/2単位0.75モルとSiO4/2単位1モルの割合からなり、かつ固形分100g中に1.0モル%の水酸基を含む重量平均分子量5,000のメチルポリシロキサンレジン5質量部とを、トルエン900質量部に溶解した。得られた溶液に、28質量%のアンモニア水を1質量部添加し、室温にて24時間撹拌して縮合反応させた。次いで、減圧状態で180℃に加熱し、トルエン、縮合水、アンモニア等を除去させて、固形化された部分脱水縮合物を得た。この部分脱水縮合物100質量部に、トルエン900質量部を加えて溶解させた。この溶液にヘキサメチルジシラザン20質量部を加え、130℃にて3時間撹拌して残存する水酸基を封鎖した。次いで、減圧状態で180℃に加熱し、溶剤等を除去させて、固形化された非反応性部分脱水縮合物を得た。更に、上記非反応性部分脱水縮合物100質量部にヘキサン900質量部を加えて溶解させた後、これを2,000質量部のアセトン中に投入し、析出した樹脂を回収して、その後、真空下でヘキサン等を除去して、分子量740以下の低分子量成分が0.05質量%である、重量平均分子量800,000のジメチルポリシロキサン重合体を得た。上記ジメチルポリシロキサン重合体10質量部とノナン90質量部からなる「シリコーン化合物ノナン溶液接着剤No.2」を得た。
上記シリコーン化合物ノナン溶液接着剤を用い、8インチシリコン半導体基板(直径200mm、厚さ725μm)上にスピンコートにて10μmの膜厚で接着層を形成した。8インチガラス基板(ガラスウエハ)を支持基板とし、この支持基板と、接着層を有するシリコン半導体基板とを真空接合装置内で200℃にて接合し、シリコン半導体基板、接着層及び支持基板からなる積層体を作製した。その後、グラインダーを用いてシリコン半導体基板の裏面研削を行った。最終基板厚が50μmとなるまでグラインドした。続いて、積層基板のうち、シリコン半導体基板を水平に固定しておき、支持基板を剥離した後、ノナンに5分間浸漬した後に乾燥させることにより、洗浄試験用シリコン半導体基板を作製した。この場合、接着層は支持基板に約10質量%付着して基板より除去され、基板に残存した接着層の約99質量%はノナン浸漬により除去されたが、洗浄試験用シリコン半導体基板には、約1質量%の接着層が残存した。なお、シリコーン化合物ノナン溶液接着剤として、下記実施例1〜15及び比較例1〜7はシリコーン化合物ノナン溶液接着剤No.1を用い、実施例16はシリコーン化合物ノナン溶液接着剤No.2を用いた。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液0.43g、イソドデカン99.57gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Aを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液0.72g、イソドデカン99.28gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Bを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液1.15g、イソドデカン98.85gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Cを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液2.87g、イソドデカン97.13gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Dを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液0.43g、ジプロピレングリコールジメチルエーテル99.57gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Eを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液0.72g、ジプロピレングリコールジメチルエーテル99.28gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Fを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液1.15g、ジプロピレングリコールジメチルエーテル98.85gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Gを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液2.87g、ジプロピレングリコールジメチルエーテル97.13gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Hを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化ナトリウム/2−プロパノール溶液1.74g、イソドデカン98.26gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Iを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/1−ブタノール溶液0.72g、1質量%水酸化ナトリウム/1−ブタノール溶液0.87gイソドデカン98.41gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Jを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/1−ペンタノール溶液1.44g、1%水酸化ナトリウム/1−ペンタノール溶液0.87gイソドデカン97.69gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Kを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/1−ヘキサノール溶液1.00g、イソドデカン99.00gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Lを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液1.39g、イソオクタン98.61gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Mを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液0.86g、イソノナン99.14gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Nを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液0.72g、1質量%水酸化ナトリウム/2−プロパノール溶液0.52g、p−メンタン98.76gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Oを得た。
シリコーン化合物ノナン溶液接着剤No.2を塗布したシリコン半導体基板に対して、実施例3で得た洗浄剤組成物Cを用い、同様の洗浄試験を実施した。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、2−プロパノール溶液1.43g、イソドデカン98.57gを仕込み、室温で撹拌し洗浄剤組成物Rを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液0.17g、イソドデカン99.83gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Sを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液7.21g、イソドデカン92.79gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Tを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、2−プロパノール1.43g、ジプロピレングリコールジメチルエーテル98.57gを仕込み、室温で撹拌し洗浄剤組成物Uを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液0.17g、ジプロピレングリコールジメチルエーテル99.83gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Vを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化カリウム/2−プロパノール溶液7.21g、ジプロピレングリコールジメチルエーテル92.79gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Wを得た。
撹拌装置、冷却装置及び温度計を取り付けた500mlフラスコに、1質量%水酸化ナトリウムカリウム/2−プロパノール溶液1.74g、水1.0g、ジプロピレングリコールジメチルエーテル97.26gを仕込み、室温で均一になるまで撹拌し、洗浄剤組成物Xを得た。
上記各例の洗浄剤組成物の外観について、目視にて確認した。沈澱物の析出や水層の分離等の不具合を確認し、異常が確認されなかった場合は「○」、異常が確認された場合は「×」で示した。
上記各例の洗浄剤組成物を用いて、製造されたシリコン半導体基板の洗浄を行った。具体的には、シリコン半導体基板を洗浄剤組成物に5分間浸漬した後、シリコン半導体基板の表面を1分間純水で洗い流し、乾燥させた。乾燥後のシリコン半導体基板の表面を観察した。基板の表面に異常が無く、基板の表面がシリコーン化合物ノナン溶液接着剤の塗布前と同等であれば「○」、基板の表面に曇りや腐食等の異常が確認された場合は「×」で示した。
上記各例の洗浄剤組成物を用いて、製造されたシリコン半導体基板の洗浄を行った。具体的には、シリコン半導体基板を洗浄剤組成物に5分間浸漬した後、シリコン半導体基板の表面を1分間純水で洗い流し、乾燥させた。乾燥後のシリコン半導体基板の表面の水接触角を確認した。洗浄前の水接触角は108°であり、表1〜3に5分間浸漬・洗浄後の水接触角を示した。
上記各例の洗浄剤組成物を用いて、製造されたシリコン半導体基板の洗浄を行った。具体的には、シリコン半導体基板を洗浄剤組成物に5分間浸漬した後、シリコン半導体基板の表面を1分間純水で洗い流し、乾燥させた。乾燥後のシリコン半導体基板の表面を、X線光電子分光分析装置により分析を行った。洗浄前の基板表面におけるシリコーン含有率は22質量%であり、洗浄後の基板表面におけるシリコーン含有率が5質量%以下となれば許容範囲とする。表1〜3に洗浄後の基板表面に残存したシリコーン含有率を示した。
上記各例の洗浄剤組成物を用いて、製造されたシリコン半導体基板の洗浄を行った。具体的には、シリコン半導体基板を洗浄剤組成物に5分間浸漬した後、シリコン半導体基板の表面を1分間純水で洗い流し、乾燥させた。乾燥後のシリコン半導体基板の表面に対して、モールド材(信越化学工業社製の製品名「SMC−375TGF−6)を断面積φ5mmとなるように成型し、第1段階(120℃、30分)及び第2段階(165℃、3時間)の二段階により、上記モールド材を硬化させた。硬化後、DAGE社製の万能型ボンドテスター「SERIE4000PXY」により、シリコン半導体基板とモールド材との接着力を測定した。なお、洗浄前のシリコン半導体基板の接着力は0.2MPaである。
また、洗浄後のシリコン半導体基板とモールド材との接着力については、本発明(実施例3,6)の方が比較例2,4,7よりも格段に高い接着力を示すことが分かる。
Claims (7)
- シリコン半導体薄型基板表面のシリコーン系接着剤除去用の洗浄剤組成物であって、
(A)炭素数5〜20の脂肪族炭化水素又は炭素数5〜20のジアルキレングリコールジアルキルエーテルである有機溶媒90.0〜99.9質量%、
(B)炭素数3〜6のアルコール0.1〜10.0質量%、及び
(C)水酸化ナトリウム及び/又は水酸化カリウム
を含有し、かつ、洗浄剤組成物中には、(A)、(B)成分の総量100質量部に対して(C)成分のナトリウム及び/又はカリウムを濃度20〜300ppm(0.002〜0.03質量部)含有し、溶媒として水を含まないことを特徴とする洗浄剤組成物。 - 更に、第四級アンモニウム塩を含有する請求項1記載の洗浄剤組成物。
- (A)成分の脂肪族炭化水素が、オクタン、ノナン、デカン、ウンデカン、ドデカン、テトラデカン、ヘキサデカン、イソオクタン、イソノナン、イソデカン、イソドデカン、アルキルシクロヘキサン及びp−メンタンの群から選ばれる1種又は2種以上である請求項1又は2記載の洗浄剤組成物。
- 洗浄剤組成物を用いて洗浄された基板の水接触角が100°未満となる請求項1〜3のいずれか1項記載の洗浄剤組成物。
- 下記(a)〜(d)工程、
(a)基板又は支持基板の上に、接着剤組成物により接着層を形成し、該接着層を介して、上記基板と上記支持基板とを接合する接合工程、
(b)上記支持基板に接合された上記基板を加工する加工工程、
(c)上記加工後の上記基板を上記支持基板から剥離する剥離工程、及び
(d)上記剥離後の基板に残存する接着層を、請求項1〜4のいずれか1項記載の洗浄剤組成物により洗浄除去する洗浄除去工程
を含むことを特徴とする薄型基板の製造方法。 - 上記接着剤組成物が、シリコーン化合物を含有する接着剤組成物である請求項5記載の薄型基板の製造方法。
- 上記シリコーン化合物がケイ素原子に結合する水酸基を2個以上有する直鎖状又は分岐状のオルガノポリシロキサンと、R3SiO2単位(Rは1価炭化水素基)とSiO2単位とを含有し、かつ水酸基を含有するオルガノポリシロキサンレジンとの(部分)脱水縮合物である請求項6記載の薄型基板の製造方法。
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JP7232381B2 (ja) * | 2020-06-30 | 2023-03-02 | 日東電工株式会社 | 粘着剤処理液、および粘着剤処理方法 |
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JP2813321B2 (ja) * | 1995-08-18 | 1998-10-22 | 松下電器産業株式会社 | 洗浄方法 |
JPH10176190A (ja) * | 1996-12-17 | 1998-06-30 | Toshiba Corp | 洗浄剤および洗浄方法 |
TW200413522A (en) * | 2002-11-08 | 2004-08-01 | Sumitomo Chemical Co | Washing liquid for semiconductor substrate |
US7442675B2 (en) * | 2003-06-18 | 2008-10-28 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning composition and method of cleaning semiconductor substrate |
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KR20100021432A (ko) * | 2007-06-07 | 2010-02-24 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 반도체용 난연성 용매 |
US8658583B2 (en) * | 2008-09-22 | 2014-02-25 | Ekc Technology, Inc. | Method for making a photoresist stripping solution comprising an organic sulfonic acid and an organic hydrocarbon solvent |
US20110146724A1 (en) * | 2009-12-19 | 2011-06-23 | Mr. WAI MUN LEE | Photoresist stripping solutions |
JP2013010888A (ja) | 2011-06-30 | 2013-01-17 | Lion Corp | 半導体基板用洗浄剤組成物 |
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JP5846060B2 (ja) | 2011-07-27 | 2016-01-20 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
US8987181B2 (en) * | 2011-11-08 | 2015-03-24 | Dynaloy, Llc | Photoresist and post etch residue cleaning solution |
WO2013187313A1 (ja) * | 2012-06-13 | 2013-12-19 | 三菱瓦斯化学株式会社 | 洗浄用液体組成物、半導体素子の洗浄方法、および半導体素子の製造方法 |
JP6165665B2 (ja) * | 2013-05-30 | 2017-07-19 | 信越化学工業株式会社 | 基板の洗浄方法 |
US10035978B2 (en) * | 2014-05-02 | 2018-07-31 | Mitsubishi Gas Chemical Company, Inc. | Semiconductor element cleaning liquid and cleaning method |
JP6350080B2 (ja) * | 2014-07-31 | 2018-07-04 | Jsr株式会社 | 半導体基板洗浄用組成物 |
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US10501710B2 (en) | 2019-12-10 |
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EP3240016B1 (en) | 2020-02-26 |
TW201807188A (zh) | 2018-03-01 |
JP2017197621A (ja) | 2017-11-02 |
CN107312648B (zh) | 2021-09-10 |
KR102294802B1 (ko) | 2021-08-26 |
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