JP6669638B2 - スイッチング回路 - Google Patents
スイッチング回路 Download PDFInfo
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- JP6669638B2 JP6669638B2 JP2016231511A JP2016231511A JP6669638B2 JP 6669638 B2 JP6669638 B2 JP 6669638B2 JP 2016231511 A JP2016231511 A JP 2016231511A JP 2016231511 A JP2016231511 A JP 2016231511A JP 6669638 B2 JP6669638 B2 JP 6669638B2
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- JP
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- Prior art keywords
- igbt
- circuit
- current
- timing
- potential
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- 238000001514 detection method Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
- H03K17/166—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Description
12 :高電位配線
13 :接続配線
14 :低電位配線
15 :直列回路
16 :スイッチング回路
22 :ダイオード
24 :ダイオード
30 :並列回路
40 :ゲート制御回路
50 :電流検出回路
74 :コンパレータ
80 :制御アンプ
82 :ゲート充放電回路
84 :制御アンプ
86 :ゲート充放電回路
90 :ロジック制御回路
92 :モータ
Claims (1)
- 第1IGBTと第2IGBTの並列回路が挿入されている配線と、
ターンオンタイミングとターンオフタイミングを示す信号の入力を受け、前記信号に応じて前記第1IGBTと前記第2IGBTをスイッチングさせる制御回路、
を備えており、
前記制御回路が、
前記ターンオンタイミングで前記第1IGBTと前記第2IGBTの双方をオンさせ、
前記第1IGBTと前記第2IGBTの双方がオン状態にあるときに前記並列回路に流れる電流が閾値以下のときは、前記ターンオフタイミングよりも前に前記第1IGBTと前記第2IGBTの一方をオフするとともに前記ターンオフタイミングにおいて前記第1IGBTと前記第2IGBTの他方をオフする第1制御を実施し、
前記第1IGBTと前記第2IGBTの双方がオン状態にあるときに前記並列回路に流れる前記電流が前記閾値よりも高いときは、前記ターンオフタイミングで前記第1IGBTと前記第2IGBTの双方をオフさせる第2制御を実施し、
前記制御回路が、前記第1IGBTに流れる電流に対応する電圧と前記第2IGBTに流れる電流に対応する電圧の入力を受ける分圧回路を有しており、
前記制御回路が、前記第1IGBTと前記第2IGBTの双方がオン状態にあるときの前記分圧回路の出力電圧に基づいて前記第1制御と前記第2制御のいずれかを実施する、
スイッチング回路。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016231511A JP6669638B2 (ja) | 2016-11-29 | 2016-11-29 | スイッチング回路 |
US15/824,578 US10256330B2 (en) | 2016-11-29 | 2017-11-28 | Switching circuit |
CN201711217707.8A CN108123707B (zh) | 2016-11-29 | 2017-11-28 | 开关电路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016231511A JP6669638B2 (ja) | 2016-11-29 | 2016-11-29 | スイッチング回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018088639A JP2018088639A (ja) | 2018-06-07 |
JP6669638B2 true JP6669638B2 (ja) | 2020-03-18 |
Family
ID=62190439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016231511A Active JP6669638B2 (ja) | 2016-11-29 | 2016-11-29 | スイッチング回路 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10256330B2 (ja) |
JP (1) | JP6669638B2 (ja) |
CN (1) | CN108123707B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6973335B2 (ja) * | 2018-09-06 | 2021-11-24 | 株式会社デンソー | 過電流検出装置 |
CN110277900B (zh) * | 2019-06-24 | 2021-07-09 | 深圳市四方电气技术有限公司 | Igbt驱动峰值检测保护电路 |
JP7447756B2 (ja) * | 2020-10-01 | 2024-03-12 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05299990A (ja) | 1992-02-17 | 1993-11-12 | Fuji Electric Co Ltd | 半導体装置 |
JP2007074771A (ja) * | 2005-09-05 | 2007-03-22 | Nissan Motor Co Ltd | 電圧駆動型スイッチング回路、多相インバータ装置、および、電圧駆動型スイッチング制御方法 |
JP4779549B2 (ja) | 2005-10-04 | 2011-09-28 | 富士電機株式会社 | 電圧駆動型半導体素子のゲート駆動回路。 |
JP2008067157A (ja) * | 2006-09-08 | 2008-03-21 | Sony Corp | 差動増幅回路、周波数変換回路、並びに無線通信装置 |
JP2009284640A (ja) * | 2008-05-21 | 2009-12-03 | Toyota Motor Corp | 半導体素子駆動装置及び電圧変換装置 |
JP5854895B2 (ja) * | 2011-05-02 | 2016-02-09 | 三菱電機株式会社 | 電力用半導体装置 |
WO2014063065A1 (en) * | 2012-10-19 | 2014-04-24 | Gogoro, Inc. | Battery configuration for an electric vehicle |
US9444448B2 (en) * | 2013-12-10 | 2016-09-13 | General Electric Company | High performance IGBT gate drive |
US20150249448A1 (en) * | 2014-02-28 | 2015-09-03 | Infineon Technologies Austria Ag | Electronic Circuit Operable as an Electronic Switch |
JP5907199B2 (ja) * | 2014-03-12 | 2016-04-26 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の制御方法 |
JP6349855B2 (ja) * | 2014-03-27 | 2018-07-04 | 株式会社デンソー | 駆動装置 |
JP6172175B2 (ja) * | 2015-02-09 | 2017-08-02 | トヨタ自動車株式会社 | スイッチング回路及び半導体装置 |
JP6319276B2 (ja) * | 2015-11-20 | 2018-05-09 | トヨタ自動車株式会社 | スイッチング回路 |
CN205693327U (zh) * | 2016-04-18 | 2016-11-16 | 佛山市顺德区美的电热电器制造有限公司 | 一种半桥浪涌检测保护电路及电磁加热设备 |
-
2016
- 2016-11-29 JP JP2016231511A patent/JP6669638B2/ja active Active
-
2017
- 2017-11-28 US US15/824,578 patent/US10256330B2/en active Active
- 2017-11-28 CN CN201711217707.8A patent/CN108123707B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20180151708A1 (en) | 2018-05-31 |
JP2018088639A (ja) | 2018-06-07 |
CN108123707A (zh) | 2018-06-05 |
US10256330B2 (en) | 2019-04-09 |
CN108123707B (zh) | 2021-09-14 |
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