JP6666970B2 - サブマウントおよびその製造方法 - Google Patents
サブマウントおよびその製造方法 Download PDFInfo
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- JP6666970B2 JP6666970B2 JP2018167048A JP2018167048A JP6666970B2 JP 6666970 B2 JP6666970 B2 JP 6666970B2 JP 2018167048 A JP2018167048 A JP 2018167048A JP 2018167048 A JP2018167048 A JP 2018167048A JP 6666970 B2 JP6666970 B2 JP 6666970B2
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- layer
- heat dissipation
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- conductive heat
- gold
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 230000017525 heat dissipation Effects 0.000 claims description 128
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 45
- 239000010931 gold Substances 0.000 claims description 38
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 37
- 229910052737 gold Inorganic materials 0.000 claims description 37
- 229910052759 nickel Inorganic materials 0.000 claims description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 229910003460 diamond Inorganic materials 0.000 claims description 11
- 239000010432 diamond Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 230000000191 radiation effect Effects 0.000 description 7
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
- Led Device Packages (AREA)
- Die Bonding (AREA)
Description
2 素子
10 基板
10a 第1面
10b 第2面
11 第1導電放熱層
12 第2導電放熱層
12a 上面
13 第1放熱層
14 ボンディング層
15 ダイヤモンド薄膜層
111、121、131 チタン層
112、122、132 銅層
113、123、133 ニッケル層
114、124、134 金層
141 ニッケル層
142 薄金層
143 金錫層
144 金層
Claims (8)
- 対向する第1面と第2面を有する基板と、
前記第1面に定義されている導電および放熱の領域に形成される第1導電放熱層と、
前記第1導電放熱層に離間して前記第1面に定義されている導電および放熱の領域に形成される第2導電放熱層と、
前記第2面に定義されている導電および放熱の領域に形成される第1放熱層と、
一方の縁部又は両方の縁部が前記第2導電放熱層の上面の縁部からはみ出すようにかつ前記第2導電放熱層の側面の一部を覆うように前記第2導電放熱層の上面に形成されるボンディング層とを備え、
前記ボンディング層は、ニッケル層、薄金層、金錫層、および金層を順に形成してなるか、または白金層、薄金層、金錫層、および金層を順に形成してなるものであり、
前記ボンディング層は、前記第2導電放熱層の上面に定義されているボンディング領域に形成される、サブマウント。 - 前記第1導電放熱層、前記第2導電放熱層、および前記第1放熱層は、それぞれチタン層、銅層、ニッケル層、および金層を順に形成してなるものである、請求項1に記載のサブマウント。
- 前記銅層は40μmよりも大きい厚みを有する、請求項2に記載のサブマウント。
- 前記基板は、窒化アルミニウム基板、シリコン基板、セラミック基板、または金属基板である、請求項1に記載のサブマウント。
- 前記基板と前記第1導電放熱層および前記第2導電放熱層の間に位置するように前記第1面に形成されるダイヤモンド薄膜層をさらに備える、請求項1に記載のサブマウント。
- 前記第1導電放熱層および前記第2導電放熱層は、それぞれチタン層および金層を順に形成してなるものである、請求項5に記載のサブマウント。
- 対向する第1面と第2面を有する基板を供給するステップと、
前記基板の前記第1面と前記第2面に導電および放熱の領域を定義して、前記第1面に第1導電放熱層および第2導電放熱層を形成するとともに、前記第2面に第1放熱層を形成するステップと、
前記第2導電放熱層の上面に素子のボンディング領域を定義して、一方の縁部又は両方の縁部が前記第2導電放熱層の上面の縁部からはみ出すようにかつ前記第2導電放熱層の側面の一部を覆うようにメッキによって前記第2導電放熱層の上面にボンディング層を形成するステップとを含み、
前記ボンディング層は、ニッケル層、薄金層、金錫層、および金層を順に形成してなるか、または白金層、薄金層、金錫層、および金層を順に形成してなるものである、サブマウントの製造方法。 - 前記第1導電放熱層、前記第2導電放熱層、および前記第1放熱層は、蒸着、スパッタリング、またはメッキによって形成される、請求項7に記載のサブマウントの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW106136526 | 2017-10-24 | ||
TW106136526A TWI638433B (zh) | 2017-10-24 | 2017-10-24 | 元件次黏著載具及其製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019080045A JP2019080045A (ja) | 2019-05-23 |
JP6666970B2 true JP6666970B2 (ja) | 2020-03-18 |
Family
ID=64802822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018167048A Active JP6666970B2 (ja) | 2017-10-24 | 2018-09-06 | サブマウントおよびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10660212B2 (ja) |
EP (1) | EP3477696B1 (ja) |
JP (1) | JP6666970B2 (ja) |
KR (1) | KR102267462B1 (ja) |
TW (1) | TWI638433B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10833474B2 (en) * | 2017-08-02 | 2020-11-10 | Nlight, Inc. | CTE-matched silicon-carbide submount with high thermal conductivity contacts |
TWI795696B (zh) * | 2020-12-04 | 2023-03-11 | 吳聲欣 | 半導體元件封裝結構及其製造方法 |
TWI837514B (zh) * | 2021-09-27 | 2024-04-01 | 艾姆勒科技股份有限公司 | 具高附著力之散熱基材結構 |
Family Cites Families (19)
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DE59208893D1 (de) * | 1992-01-23 | 1997-10-16 | Siemens Ag | Halbleitermodul mit hoher Isolations- und Wärmefähigkeit |
JPH06350202A (ja) * | 1993-06-10 | 1994-12-22 | Toshiba Corp | 半導体発光装置 |
US5622305A (en) * | 1995-05-10 | 1997-04-22 | Lucent Technologies Inc. | Bonding scheme using group VB metallic layer |
JP3092603B2 (ja) | 1998-11-02 | 2000-09-25 | 日本電気株式会社 | 半導体素子実装基板又は放熱板とその製造方法及び該基板又は放熱板と半導体素子との接合体 |
JP4407509B2 (ja) * | 2004-01-20 | 2010-02-03 | 三菱マテリアル株式会社 | 絶縁伝熱構造体及びパワーモジュール用基板 |
US7795732B2 (en) * | 2005-02-07 | 2010-09-14 | Kabushiki Kaisha Toshiba | Ceramic wiring board and process for producing the same, and semiconductor device using the same |
JP5273922B2 (ja) * | 2006-12-28 | 2013-08-28 | 株式会社アライドマテリアル | 放熱部材および半導体装置 |
TWI351729B (en) * | 2007-07-03 | 2011-11-01 | Siliconware Precision Industries Co Ltd | Semiconductor device and method for fabricating th |
EP2744310A4 (en) * | 2011-08-11 | 2015-06-17 | Furukawa Electric Co Ltd | WIRING SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE |
TWM445333U (zh) * | 2012-08-23 | 2013-01-11 | chun-hui Ma | 複合式散熱電路板 |
CN103840043A (zh) * | 2012-11-26 | 2014-06-04 | 株式会社高松电镀 | Led用晶片及其制造方法 |
EP2889903A1 (en) * | 2013-12-24 | 2015-07-01 | Nxp B.V. | Die with a multilayer backside interface layer for solder bonding to a substrate and corresponding manufacturing method |
KR20170096050A (ko) * | 2015-01-29 | 2017-08-23 | 쇼와 덴코 가부시키가이샤 | Cof형 반도체 패키지 및 액정 표시 장치 |
US20160276242A1 (en) * | 2015-03-20 | 2016-09-22 | Raytheon Company | Thermal spreader having inter-metal diffusion barrier layer |
US10872841B2 (en) * | 2015-07-09 | 2020-12-22 | Kabushiki Kaisha Toshiba | Ceramic metal circuit board and semiconductor device using the same |
JP2017069384A (ja) * | 2015-09-30 | 2017-04-06 | シチズンファインデバイス株式会社 | サブマウントの製造方法 |
US10790410B2 (en) * | 2015-10-23 | 2020-09-29 | Sensor Electronic Technology, Inc. | Light extraction from optoelectronic device |
WO2017141894A1 (ja) * | 2016-02-15 | 2017-08-24 | 三菱電機株式会社 | 半導体レーザ光源装置 |
US10833474B2 (en) * | 2017-08-02 | 2020-11-10 | Nlight, Inc. | CTE-matched silicon-carbide submount with high thermal conductivity contacts |
-
2017
- 2017-10-24 TW TW106136526A patent/TWI638433B/zh active
-
2018
- 2018-09-06 JP JP2018167048A patent/JP6666970B2/ja active Active
- 2018-10-04 US US16/151,428 patent/US10660212B2/en active Active
- 2018-10-10 KR KR1020180120660A patent/KR102267462B1/ko active IP Right Grant
- 2018-10-10 EP EP18199517.6A patent/EP3477696B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20190124774A1 (en) | 2019-04-25 |
TWI638433B (zh) | 2018-10-11 |
TW201917833A (zh) | 2019-05-01 |
EP3477696A1 (en) | 2019-05-01 |
US10660212B2 (en) | 2020-05-19 |
KR20190045833A (ko) | 2019-05-03 |
JP2019080045A (ja) | 2019-05-23 |
EP3477696B1 (en) | 2021-10-06 |
KR102267462B1 (ko) | 2021-06-23 |
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