JP6666527B1 - 制御装置 - Google Patents
制御装置 Download PDFInfo
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- JP6666527B1 JP6666527B1 JP2019541475A JP2019541475A JP6666527B1 JP 6666527 B1 JP6666527 B1 JP 6666527B1 JP 2019541475 A JP2019541475 A JP 2019541475A JP 2019541475 A JP2019541475 A JP 2019541475A JP 6666527 B1 JP6666527 B1 JP 6666527B1
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- 238000004804 winding Methods 0.000 claims abstract description 64
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- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000002955 isolation Methods 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 description 33
- 238000010586 diagram Methods 0.000 description 24
- 239000003990 capacitor Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 14
- 239000013307 optical fiber Substances 0.000 description 10
- 230000002457 bidirectional effect Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J9/00—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting
- H02J9/04—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source
- H02J9/06—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
- H02M1/092—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/325—Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/107—Modifications for increasing the maximum permissible switched voltage in composite switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/68—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors specially adapted for switching ac currents or voltages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
- H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0009—AC switches, i.e. delivering AC power to a load
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Business, Economics & Management (AREA)
- Emergency Management (AREA)
- Stand-By Power Supply Arrangements (AREA)
- Dc-Dc Converters (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
Description
図1は、この発明の実施の形態1による無停電電源装置の構成を示す回路ブロック図である。この無停電電源装置は三相交流電力を負荷に供給するものであるが、図面および説明の簡単化のため、図1では一相に関連する部分のみが示されている。また、このような無停電電源装置は瞬低補償装置とも呼ばれる。
図8は、この発明の実施の形態2による無停電電源装置の要部を示す回路ブロック図であって、図3と対比される図である。図8を参照して、実施の形態2が実施の形態1と異なる点は、交流電圧発生器12が交流電圧発生器45で置換されている点である。交流電圧発生器45は、交流電圧発生器12と同様に、交流電源15および絶縁トランスT1〜TNを含む。
図9は、この発明の実施の形態3による無停電電源装置の要部を示す回路ブロック図であって、図8と対比される図である。図9を参照して、実施の形態3が実施の形態2と異なる点は、交流電圧発生器45が交流電圧発生器50で置換されている点である。
Claims (9)
- 直列接続された第1〜第Nの半導体スイッチング素子を含むスイッチを制御する制御装置であって、
第1〜第Nの交流電圧を生成する交流電圧発生器と、
前記第1〜第Nの交流電圧をそれぞれ第1〜第Nの直流電圧に変換する直流電圧発生器と、
前記スイッチをオンさせる場合には、前記第1〜第Nの直流電圧をそれぞれ前記第1〜第Nの半導体スイッチング素子のゲートに与え、前記スイッチをオフさせる場合には、前記第1〜第Nの直流電圧の前記第1〜第Nの半導体スイッチング素子のゲートへの供給を停止するドライバとを備え、
前記交流電圧発生器は、第1〜第Nの絶縁トランスを含み、
第nおよび第(n+1)の絶縁トランスの1次巻線は交流電源電圧を受け、
第1〜第(n−1)の絶縁トランスの1次巻線はそれぞれ第2〜第nの絶縁トランスの2次巻線に接続され、
第(n+2)〜第Nの絶縁トランスの1次巻線はそれぞれ第(n+1)〜第(N−1)の絶縁トランスの2次巻線に接続され、
第1〜第Nの絶縁トランスの2次巻線はそれぞれ第1〜第Nの交流電圧を出力し、
Nは2以上の自然数であり、nはNよりも小さな自然数である、制御装置。 - 前記第1〜第Nの半導体スイッチング素子はそれぞれ第1〜第Nの絶縁ゲートバイポーラトランジスタである、請求項1に記載の制御装置。
- 前記スイッチは、さらに、それぞれ前記第1〜第Nの絶縁ゲートバイポーラトランジスタに逆並列に接続された第1〜第Nのダイオードを含む、請求項2に記載の制御装置。
- さらに、商用交流電源が正常であるか否かを判定する判定部を備え、
前記スイッチは前記商用交流電源と負荷の間に接続され、
前記ドライバは、前記判定部の判定結果に基づいて動作し、前記商用交流電源が正常である場合には前記スイッチをオンさせ、前記商用交流電源が正常でない場合には前記スイッチをオフさせる、請求項1に記載の制御装置。 - 直列接続された第1〜第Nの半導体スイッチング素子を含むスイッチを制御する制御装置であって、
第1〜第Nの交流電圧を生成する交流電圧発生器と、
前記第1〜第Nの交流電圧をそれぞれ第1〜第Nの直流電圧に変換する直流電圧発生器と、
前記スイッチをオンさせる場合には、前記第1〜第Nの直流電圧をそれぞれ前記第1〜第Nの半導体スイッチング素子のゲートに与え、前記スイッチをオフさせる場合には、前記第1〜第Nの直流電圧の前記第1〜第Nの半導体スイッチング素子のゲートへの供給を停止するドライバとを備え、
前記交流電圧発生器は、第1〜第Nの絶縁トランスを含み、
第nの絶縁トランスの1次巻線は交流電源電圧を受け、
第1〜第(n−1)の絶縁トランスの1次巻線はそれぞれ第2〜第nの絶縁トランスの2次巻線に接続され、
第(n+1)〜第Nの絶縁トランスの1次巻線はそれぞれ第n〜第(N−1)の絶縁トランスの2次巻線に接続され、
第1〜第Nの絶縁トランスの2次巻線はそれぞれ第1〜第Nの交流電圧を出力し、
Nは3以上の自然数であり、nはNよりも小さな自然数である、制御装置。 - 前記交流電圧発生器は、さらに、前記交流電源電圧を生成する交流電源を含み、
前記第nの絶縁トランスは前記交流電源内に設けられている、請求項5に記載の制御装置。 - 前記第1〜第Nの半導体スイッチング素子はそれぞれ第1〜第Nの絶縁ゲートバイポーラトランジスタである、請求項5に記載の制御装置。
- 前記スイッチは、さらに、それぞれ前記第1〜第Nの絶縁ゲートバイポーラトランジスタに逆並列に接続された第1〜第Nのダイオードを含む、請求項7に記載の制御装置。
- さらに、商用交流電源が正常であるか否かを判定する判定部を備え、
前記スイッチは前記商用交流電源と負荷の間に接続され、
前記ドライバは、前記判定部の判定結果に基づいて動作し、前記商用交流電源が正常である場合には前記スイッチをオンさせ、前記商用交流電源が正常でない場合には前記スイッチをオフさせる、請求項5に記載の制御装置。
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PCT/JP2019/008804 WO2020179004A1 (ja) | 2019-03-06 | 2019-03-06 | 制御装置 |
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US (1) | US11349382B2 (ja) |
JP (1) | JP6666527B1 (ja) |
KR (1) | KR102566565B1 (ja) |
CN (1) | CN112514221A (ja) |
WO (1) | WO2020179004A1 (ja) |
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US11245337B2 (en) * | 2018-11-21 | 2022-02-08 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Power supply device |
JP6864103B2 (ja) * | 2019-03-05 | 2021-04-21 | 東芝三菱電機産業システム株式会社 | 電源装置 |
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EP3588764A4 (en) | 2017-02-27 | 2020-02-26 | Mitsubishi Electric Corporation | ELECTRIC POWER CONVERSION APPARATUS AND DIRECT CURRENT POWER TRANSMISSION SYSTEM |
US11245337B2 (en) * | 2018-11-21 | 2022-02-08 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Power supply device |
JP6864103B2 (ja) * | 2019-03-05 | 2021-04-21 | 東芝三菱電機産業システム株式会社 | 電源装置 |
US11515790B2 (en) * | 2020-07-13 | 2022-11-29 | Delta Electronics (Shanghai) Co., Ltd. | Conversion circuit topology |
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2019
- 2019-03-06 CN CN201980049983.9A patent/CN112514221A/zh active Pending
- 2019-03-06 JP JP2019541475A patent/JP6666527B1/ja active Active
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Patent Citations (5)
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---|---|---|---|---|
JPS5937733A (ja) * | 1982-07-26 | 1984-03-01 | シ−メンス・アクチエンゲゼルシヤフト | 直列接続サイリスタの点弧回路 |
JPH03237813A (ja) * | 1990-02-15 | 1991-10-23 | Mitsubishi Electric Corp | パルス発生回路 |
JPH09162710A (ja) * | 1995-12-06 | 1997-06-20 | Mitsubishi Electric Corp | 電源供給装置 |
JP2011229259A (ja) * | 2010-04-19 | 2011-11-10 | Toshiba Mitsubishi-Electric Industrial System Corp | 無停電電源装置 |
JP2013226050A (ja) * | 2013-08-08 | 2013-10-31 | Hitachi Automotive Systems Ltd | 電源回路及び電力変換装置 |
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US11349382B2 (en) | 2022-05-31 |
KR102566565B1 (ko) | 2023-08-11 |
WO2020179004A1 (ja) | 2020-09-10 |
US20210273549A1 (en) | 2021-09-02 |
CN112514221A (zh) | 2021-03-16 |
KR20210024063A (ko) | 2021-03-04 |
JPWO2020179004A1 (ja) | 2021-03-11 |
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