JP6665996B2 - チップ抵抗器 - Google Patents
チップ抵抗器 Download PDFInfo
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- JP6665996B2 JP6665996B2 JP2017133420A JP2017133420A JP6665996B2 JP 6665996 B2 JP6665996 B2 JP 6665996B2 JP 2017133420 A JP2017133420 A JP 2017133420A JP 2017133420 A JP2017133420 A JP 2017133420A JP 6665996 B2 JP6665996 B2 JP 6665996B2
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- Prior art keywords
- resistor
- manganese
- tin
- less
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011572 manganese Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 33
- NWLCFADDJOPOQC-UHFFFAOYSA-N [Mn].[Cu].[Sn] Chemical compound [Mn].[Cu].[Sn] NWLCFADDJOPOQC-UHFFFAOYSA-N 0.000 claims description 31
- 229910045601 alloy Inorganic materials 0.000 claims description 31
- 239000000956 alloy Substances 0.000 claims description 31
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 24
- 229910052748 manganese Inorganic materials 0.000 claims description 24
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 23
- 239000011241 protective layer Substances 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000009966 trimming Methods 0.000 description 8
- NTIGMHLFJNXNBT-UHFFFAOYSA-N manganese tin Chemical compound [Mn].[Sn] NTIGMHLFJNXNBT-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910000570 Cupronickel Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/01—Mounting; Supporting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06526—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/232—Adjusting the temperature coefficient; Adjusting value of resistance by adjusting temperature coefficient of resistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/003—Thick film resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/028—Housing; Enclosing; Embedding; Filling the housing or enclosure the resistive element being embedded in insulation with outer enclosing sheath
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Details Of Resistors (AREA)
Description
121、321、421、521 第1電極
122、322、422、522 第2電極
323 第3電極
130、530 抵抗体
331、431、531 第1抵抗体
332、432、532 第2抵抗体
140 保護層
341a、341b、551 第1保護層
342a、342b、342c、552 第2保護層
541 第1上面電極
542 第2上面電極
561 第1下面電極
562 第2下面電極
571 第1金属カバー
572 第2金属カバー
Claims (12)
- 基板と、
前記基板の一面上に配置される第1及び第2電極と、
前記第1電極と第2電極とを電気的に連結するように配置され、銅−マンガン−スズ(Cu−Mn−Sn)合金を含む抵抗体とを含み、
前記銅−マンガン−スズ(Cu−Mn−Sn)合金において、マンガン(Mn)の割合は11wt%以上、20wt%以下であり(ただし、マンガン(Mn)の割合が17wt%以下の場合を除く)、スズ(Sn)の割合は2wt%以上、8wt%以下であり、マンガン(Mn)とスズ(Sn)の総割合は19wt%超過、22.5wt%以下であり、
前記抵抗体の熱起電力(thermo electromotive force)の絶対値は、3μV/℃以下であり、前記抵抗体の抵抗温度係数(Temperature Coefficient of Resistivity、TCR)の絶対値は、100ppm/℃以下であり、
前記抵抗体は、ガラス(glass)をさらに含む
チップ抵抗器。 - 前記抵抗体の抵抗値は、0Ω超え、100mΩ以下である請求項1に記載のチップ抵抗器。
- 前記抵抗体は、溝(groove)を有する請求項1または2に記載のチップ抵抗器。
- 前記第1電極と第2電極とを電気的に連結するように配置され、銅−マンガン−スズ(Cu−Mn−Sn)合金を含む第2抵抗体をさらに含み、
前記第2抵抗体に含まれる銅−マンガン−スズ(Cu−Mn−Sn)合金におけるマンガン(Mn)の割合は、前記抵抗体に含まれる銅−マンガン−スズ(Cu−Mn−Sn)合金におけるマンガン(Mn)の割合より高く、
前記第2抵抗体に含まれる銅−マンガン−スズ(Cu−Mn−Sn)合金におけるスズ(Sn)の割合は、前記抵抗体に含まれる銅−マンガン−スズ(Cu−Mn−Sn)合金におけるスズ(Sn)の割合より低い請求項1から3のいずれか一項に記載のチップ抵抗器。 - 前記銅−マンガン−スズ(Cu−Mn−Sn)合金において、スズ(Sn)の割合は2wt%以上、6wt%以下であり、マンガン(Mn)とスズ(Sn)の総割合は20wt%以下である請求項1から4のいずれか一項に記載のチップ抵抗器。
- 基板と、
前記基板の一面上に配置される第1及び第2電極と、
前記第1電極と第2電極とを電気的に連結するように配置され、銅−マンガン−スズ(Cu−Mn−Sn)合金を含む抵抗体とを含み、
前記抵抗体の熱起電力(thermo electromotive force)の絶対値は、3μV/℃以下であり、前記抵抗体の抵抗温度係数(Temperature Coefficient of Resistivity、TCR)の絶対値は、100ppm/℃以下であり、
前記抵抗体は、ガラス(glass)をさらに含み、
前記銅−マンガン−スズ(Cu−Mn−Sn)合金において、マンガン(Mn)の割合は、11wt%以上、20wt%以下であり(ただし、マンガン(Mn)の割合が17wt%以下の場合を除く)、マンガン(Mn)とスズ(Sn)の総割合は19wt%超過、22.5wt%以下であり、銅(Cu)の割合は、77.5wt%以上である
チップ抵抗器。 - 前記銅−マンガン−スズ(Cu−Mn−Sn)合金においてスズ(Sn)の割合は、2wt%以上、8wt%以下である請求項6に記載のチップ抵抗器。
- 前記銅−マンガン−スズ(Cu−Mn−Sn)合金において、スズ(Sn)の割合は2wt%以上、6wt%以下であり、マンガン(Mn)とスズ(Sn)の総割合は20wt%以下である請求項6または7に記載のチップ抵抗器。
- 基板と、
前記基板の一面上に配置される第1及び第2電極と、
前記第1電極と第2電極とを電気的に連結するように配置され、溝(groove)を有する、銅−マンガン−スズ(Cu−Mn−Sn)合金を含む抵抗体とを含み、
前記銅−マンガン−スズ(Cu−Mn−Sn)合金において、マンガン(Mn)の割合は11wt%以上、20wt%以下であり(ただし、マンガン(Mn)の割合が17wt%以下の場合を除く)、マンガン(Mn)とスズ(Sn)の総割合は19wt%超過、20wt%以下であり、
前記抵抗体の熱起電力(thermo electromotive force)の絶対値は、3μV/℃以下であり、前記抵抗体の抵抗温度係数(Temperature Coefficient of Resistivity、TCR)の絶対値は、100ppm/℃以下であり、
前記抵抗体は、ガラス(glass)をさらに含む
チップ抵抗器。 - 前記銅−マンガン−スズ(Cu−Mn−Sn)合金においてスズ(Sn)の割合は、2wt%以上、6wt%以下である請求項9に記載のチップ抵抗器。
- 前記抵抗体は、 前記抵抗体を覆う保護層を有する請求項9または10に記載のチップ抵抗器。
- 前記抵抗体の抵抗値は、0Ω超え、100mΩ以下である請求項9から11のいずれか一項に記載のチップ抵抗器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160146575A KR101994751B1 (ko) | 2016-11-04 | 2016-11-04 | 칩 저항기 |
KR10-2016-0146575 | 2016-11-04 |
Publications (2)
Publication Number | Publication Date |
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JP2018074137A JP2018074137A (ja) | 2018-05-10 |
JP6665996B2 true JP6665996B2 (ja) | 2020-03-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017133420A Active JP6665996B2 (ja) | 2016-11-04 | 2017-07-07 | チップ抵抗器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10269474B2 (ja) |
JP (1) | JP6665996B2 (ja) |
KR (1) | KR101994751B1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210144680A (ko) * | 2019-03-28 | 2021-11-30 | 후루카와 덴키 고교 가부시키가이샤 | 구리 합금 조재 및 그 제조 방법, 그것을 사용한 저항기용 저항 재료 및 저항기 |
JP6852228B2 (ja) * | 2019-03-28 | 2021-03-31 | 古河電気工業株式会社 | 銅合金条材およびその製造方法、それを用いた抵抗器用抵抗材料ならびに抵抗器 |
TW202205316A (zh) * | 2020-07-27 | 2022-02-01 | 禾伸堂企業股份有限公司 | 高功率電阻及其製造方法 |
US20230368949A1 (en) * | 2020-11-02 | 2023-11-16 | Rohm Co., Ltd. | Chip resistor |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE1007868A3 (nl) * | 1993-12-10 | 1995-11-07 | Koninkl Philips Electronics Nv | Elektrische weerstand. |
JP2001143901A (ja) * | 1999-07-23 | 2001-05-25 | Yasumoto Unoki | 抵抗器の製法 |
JP2001155902A (ja) * | 1999-11-30 | 2001-06-08 | Taiyosha Denki Kk | チップ抵抗器及びチップ抵抗器の製造方法 |
JP4204029B2 (ja) * | 2001-11-30 | 2009-01-07 | ローム株式会社 | チップ抵抗器 |
JP2004015042A (ja) * | 2002-06-11 | 2004-01-15 | Yasumoto Unoki | 抵抗器の製法 |
JP2004119692A (ja) | 2002-09-26 | 2004-04-15 | Koa Corp | 抵抗体組成物および抵抗器 |
JP4397279B2 (ja) * | 2004-06-08 | 2010-01-13 | コーア株式会社 | 抵抗組成物およびそれを用いた抵抗器 |
JP4974544B2 (ja) * | 2005-02-25 | 2012-07-11 | コーア株式会社 | 抵抗用合金材料、抵抗器および抵抗器の製造方法 |
TWI430293B (zh) * | 2006-08-10 | 2014-03-11 | Kamaya Electric Co Ltd | Production method of corner plate type chip resistor and corner plate type chip resistor |
TW200901235A (en) | 2007-06-29 | 2009-01-01 | Feel Cherng Entpr Co Ltd | Apertured fixed chip resistor and method for fabricating the same |
US20110089025A1 (en) * | 2009-10-20 | 2011-04-21 | Yageo Corporation | Method for manufacturing a chip resistor having a low resistance |
KR101892750B1 (ko) * | 2011-12-19 | 2018-08-29 | 삼성전기주식회사 | 칩 저항 부품 및 그의 제조 방법 |
JP6471494B2 (ja) * | 2014-09-29 | 2019-02-20 | 日立金属株式会社 | Cu合金材およびその製造方法 |
KR20180047411A (ko) * | 2016-10-31 | 2018-05-10 | 삼성전기주식회사 | 저항 소자 및 저항 소자 어셈블리 |
-
2016
- 2016-11-04 KR KR1020160146575A patent/KR101994751B1/ko active IP Right Grant
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2017
- 2017-07-07 JP JP2017133420A patent/JP6665996B2/ja active Active
- 2017-07-14 US US15/650,290 patent/US10269474B2/en active Active
Also Published As
Publication number | Publication date |
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US10269474B2 (en) | 2019-04-23 |
KR20180049987A (ko) | 2018-05-14 |
US20180130578A1 (en) | 2018-05-10 |
KR101994751B1 (ko) | 2019-07-01 |
JP2018074137A (ja) | 2018-05-10 |
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