JP6655798B2 - 太陽電池モジュールの製造方法 - Google Patents
太陽電池モジュールの製造方法 Download PDFInfo
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
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- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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Description
[式1]EQE(λ2)×(1−0.46n-2.8)×η≧EQE(λ1)
ここで、EQE(λ1)は波長変換物質の吸収波長の長波長端(λ1)における前記波長変換物質を含有しない状態の当該モジュールの外部量子効率、EQE(λ2)は波長変換物質の発光のピーク波長(λ2)における前記波長変換物質を含有しない状態の当該モジュールの外部量子効率、nは第1充填材の屈折率、ηは波長変換物質の量子効率である。
実施形態において参照する図面は、模式的に記載されたものであり、図面に描画された構成要素の寸法比率などは、現物と異なる場合がある。具体的な寸法比率等は、以下の説明を参酌して判断されるべきである。
図1に示すように、太陽電池モジュール10は、太陽電池11と、太陽電池11の受光面側に設けられた第1保護部材12と、太陽電池11の裏面側に設けられた第2保護部材13と、各保護部材の間に設けられ、太陽電池11を封止する充填材14とを備える。充填材14は、太陽電池11と第1保護部材12との間に配置された充填材14aと、太陽電池11と第2保護部材13との間に配置された充填材14bとを含む。本実施形態では、各保護部材の間に複数の太陽電池11が配置され、太陽電池11同士を接続する配線材15が設けられている。
図2に示すように、太陽電池11は、太陽光を受光することでキャリアを生成する光電変換部20を備える。光電変換部20は、生成したキャリアを収集する電極として、光電変換部20の受光面上に形成される受光面電極と、裏面上に形成される裏面電極とを有する(いずれも図示せず)。但し、太陽電池11の構造はこれに限定されず、例えば光電変換部20の裏面上のみに電極が形成された構造であってもよい。裏面電極は受光面電極よりも大面積に形成されることが好ましく、電極面積が大きい方の面(又は電極が形成される面)が太陽電池11の「裏面」であるといえる。
・装置:分光感度測定装置
・測定領域等:太陽電池が配置された領域に対して第1保護部材側から光を照射。波長を変えながら入射フォトン数一定の条件下で測定。
なお、太陽電池モジュールの外部量子効率は、主に太陽電池11の構造(ヘテロ型、拡散型等)や構成材料(基板を構成する半導体等)などに依存する。
[式1]EQE(λ2)×(1−0.46n-2.8)×η≧EQE(λ1)
ここで、EQE(λ1)は波長変換物質30の吸収波長の長波長端(λ1)における太陽電池モジュール10の外部量子効率、EQE(λ2)は波長変換物質30の発光のピーク波長(λ2)における太陽電池モジュール10の外部量子効率である。nは波長変換物質30の発光のピーク波長における充填材14aの屈折率(以下、単に「充填材14aの屈折率」という)である。ηは波長変換物質30の量子効率を示す。吸収波長の長波長端(λ1)は、例えば波長変換物質30を含む充填材14aの透過率が85%以上になる波長である。
図6に示すように、太陽電池モジュール10xでは、太陽電池の構造が、太陽電池モジュール10の場合と異なっている。図6に示す太陽電池11xの光電変換部40は、p型単結晶シリコン基板41と、当該基板にリン(P)を高温で拡散して形成されたn型層42とを有する。光電変換部40の受光面上及び裏面上には、電極43,44がそれぞれ形成されている。このような太陽電池11xは、一般的に拡散セルと呼ばれている。
(1)太陽電池11、第1保護部材12、及び第2保護部材13を準備する第1の工程
(2)太陽電池11を封止する充填材14a,14bを準備する第2の工程
(3)第1保護部材12、充填材14a、太陽電池11、第2充填材14b、第2保護部材13の順に重ね合わせ、各部材をラミネートする第3の工程
[式1]EQE(λ2)×(1−0.46n-2.8)×η≧EQE(λ1)
式1の条件を満たす波長変換物質30を選択して、充填材14aに添加することにより、波長変換物質30の吸収波長において外部量子効率が向上し、入射光の利用効率を改善することができる。a−Si:Hセルでは、上記のように、波長650nm〜1000nmの範囲で外部量子効率が高く、波長650nmよりも短波長側、波長1000nmよりも長波長側では、外部量子効率が低下している(図3参照)。ゆえに、発光波長が650nm〜1000nmの範囲にある波長変換物質30を用いることが好ましい。発光のピーク波長(λ2)は650nm〜1000nmの範囲にあることが好ましい。
Claims (3)
- 太陽電池、第1保護部材、及び第2保護部材を準備する第1の工程と、
前記太陽電池を封止する、第1及び第2充填材を準備する第2の工程と、
前記第1保護部材、前記第1充填材、前記太陽電池、前記第2充填材、前記第2保護部材の順に重ね合わせ、各部材をラミネートする第3の工程と、
を含み、
前記第1充填材には、特定波長の光を吸収して当該波長を変換する波長変換物質が添加されており、
前記第2の工程では、式1に基づいて、前記第1充填材に添加する前記波長変換物質を選択する、太陽電池モジュールの製造方法。
[式1]EQE(λ2)×(1−0.46n−2.8)×η≧EQE(λ1)
ここで、EQE(λ1)は前記波長変換物質の吸収波長の長波長端(λ1)における前記波長変換物質を含有しない状態の当該モジュールの外部量子効率、EQE(λ2)は前記波長変換物質の発光のピーク波長(λ2)における前記波長変換物質を含有しない状態の当該モジュールの外部量子効率、nは前記第1充填材の屈折率、ηは前記波長変換物質の量子効率である。 - 前記太陽電池は、単結晶シリコン基板と、当該基板上に形成された非晶質シリコン層とを含む光電変換部を有する、請求項1に記載の太陽電池モジュールの製造方法。
- 前記波長変換物質は、吸収波長の長波長端(λ1)が350nm〜500nmであり、発光のピーク波長(λ2)が650nm〜1000nmである、請求項2に記載の太陽電池モジュールの製造方法。
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