JP6643337B2 - リフレクタ - Google Patents
リフレクタ Download PDFInfo
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- JP6643337B2 JP6643337B2 JP2017525599A JP2017525599A JP6643337B2 JP 6643337 B2 JP6643337 B2 JP 6643337B2 JP 2017525599 A JP2017525599 A JP 2017525599A JP 2017525599 A JP2017525599 A JP 2017525599A JP 6643337 B2 JP6643337 B2 JP 6643337B2
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- 239000000758 substrate Substances 0.000 claims description 119
- 238000001816 cooling Methods 0.000 claims description 68
- 239000000463 material Substances 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000000853 adhesive Substances 0.000 claims description 15
- 230000001070 adhesive effect Effects 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910003465 moissanite Inorganic materials 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 229910001374 Invar Inorganic materials 0.000 claims description 3
- 239000006094 Zerodur Substances 0.000 claims description 3
- 229910052878 cordierite Inorganic materials 0.000 claims description 3
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 215
- 238000010894 electron beam technology Methods 0.000 description 81
- 239000003574 free electron Substances 0.000 description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 28
- 238000001459 lithography Methods 0.000 description 22
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- 210000001747 pupil Anatomy 0.000 description 3
- 239000002901 radioactive waste Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 238000005411 Van der Waals force Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
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- 230000008878 coupling Effects 0.000 description 2
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- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- -1 SiSiC Chemical compound 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1838—Diffraction gratings for use with ultraviolet radiation or X-rays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
- G02B7/181—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
- G02B7/1815—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation with cooling or heating systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
- G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Optical Elements Other Than Lenses (AREA)
- Mounting And Adjusting Of Optical Elements (AREA)
- Microscoopes, Condenser (AREA)
Description
[0001] 本出願は、2014年12月12日に出願された欧州第14197602.7号の優先権を主張し、その全体を参照により本明細書に組み込む。
Claims (18)
- 基板によって支持されたプレートを備えるリフレクタであって、前記プレートが反射面を有し、かつ接着剤フリー接合によって中間プレートに固定されており、前記中間プレートは接着剤フリー接合によって前記基板に固定されており、前記リフレクタに冷却チャネルアレイが設けられており、前記冷却チャネルアレイのチャネルが、前記基板の表面における開チャネルから形成され、前記開チャネルが、前記中間プレートによって閉鎖されて前記チャネルを作り出し、前記リフレクタが、第2の冷却チャネルアレイをさらに備え、前記第2の冷却チャネルアレイのチャネルが、前記中間プレートにおける開チャネルから形成され、前記開チャネルが、プレートによって閉鎖されている、
リフレクタ。 - 前記接着剤フリー接合が、直接接合または光学接触接合を含む、請求項1に記載のリフレクタ。
- 前記基板が、さらなる基板に対して接着剤の層によって固定された中間基板である、請求項1〜2のいずれかに記載のリフレクタ。
- 前記中間基板が、約2mm以下の厚さを有する、請求項3に記載のリフレクタ。
- 前記プレートと前記基板が、同じ材料で形成されている、請求項1〜4のいずれかに記載のリフレクタ。
- 前記材料が、シリコン、SiSiC、SiC、銅、サファイア、アルミニウム、またはニッケルのうちの1つである、請求項5に記載のリフレクタ。
- 前記プレートと前記基板が、異なる材料で形成されている、請求項1〜4のいずれかに記載のリフレクタ。
- 前記プレートが、シリコン、SiC、銅、またはアルミニウムのうちの1つで形成されている、請求項7に記載のリフレクタ。
- 前記基板が、ゼロデュア、コーディエライト、ULE、水晶、またはインバーのうちの1つで形成されている、請求項7または8に記載のリフレクタ。
- 各チャネルが250ミクロン以上の幅を有する、請求項1〜9のいずれかに記載のリフレクタ。
- 各チャネルが1mm未満の幅を有する、請求項1〜10のいずれかに記載のリフレクタ。
- 前記冷却チャネルアレイのチャネルの断面が、概ね長方形である、請求項1〜11のいずれかに記載のリフレクタ。
- 前記プレートが、前記基板の湾曲面上に前記中間プレートを介して固定される、請求項1〜12のいずれかに記載のリフレクタ。
- 前記プレートの前記反射面が湾曲し、前記プレートの反対側の面が平坦である、請求項1〜13のいずれかに記載のリフレクタ。
- 前記冷却チャネルアレイに液体を届けるように構成された入口導管と、前記冷却チャネルアレイから液体を除去するように構成された出口導管とをさらに備える、請求項1〜14のいずれかに記載のリフレクタ。
- 前記リフレクタが、ミラーまたは回折格子である、請求項1〜15のいずれかに記載のリフレクタ。
- 前記プレートの前記反射面が、金属層を備える、請求項1〜16のいずれかに記載のリフレクタ。
- 前記中間プレートにおける前記開チャネルを閉鎖する前記プレートが、前記反射面を有する前記プレートである、請求項1に記載のリフレクタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14197602 | 2014-12-12 | ||
EP14197602.7 | 2014-12-12 | ||
PCT/EP2015/075716 WO2016091486A1 (en) | 2014-12-12 | 2015-11-04 | Reflector |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017538962A JP2017538962A (ja) | 2017-12-28 |
JP6643337B2 true JP6643337B2 (ja) | 2020-02-12 |
Family
ID=52016510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017525599A Active JP6643337B2 (ja) | 2014-12-12 | 2015-11-04 | リフレクタ |
Country Status (6)
Country | Link |
---|---|
US (1) | US10216101B2 (ja) |
JP (1) | JP6643337B2 (ja) |
KR (1) | KR102492655B1 (ja) |
CN (1) | CN107003621B (ja) |
NL (1) | NL2015718A (ja) |
WO (1) | WO2016091486A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG11201908803XA (en) * | 2017-04-11 | 2019-10-30 | Asml Netherlands Bv | Lithographic apparatus and cooling method |
US20190094482A1 (en) * | 2017-09-27 | 2019-03-28 | Lumentum Operations Llc | Integrated heater with optimized shape for optical benches |
EP3704546A1 (en) * | 2017-10-30 | 2020-09-09 | ASML Holding N.V. | Assembly for use in semiconductor photolithography and method of manufacturing same |
KR20210006346A (ko) * | 2018-04-24 | 2021-01-18 | 에이에스엠엘 네델란즈 비.브이. | 방사선 빔을 위한 반사 광학 요소 |
US10613444B2 (en) * | 2018-08-28 | 2020-04-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor apparatus and method of operating the same |
DE102019217389A1 (de) * | 2019-10-18 | 2021-04-22 | Carl Zeiss Smt Gmbh | Verfahren zum Verbinden eines Anbauteils mit einem Grundkörper eines optischen Elements und optisches Element |
DE102021201715A1 (de) * | 2021-02-24 | 2022-08-25 | Carl Zeiss Smt Gmbh | Optisches Element zur Reflexion von Strahlung und optische Anordnung |
DE102021203470A1 (de) | 2021-04-08 | 2022-10-13 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung eines Spiegels eines Lithographiesystems |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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US3637296A (en) * | 1970-06-04 | 1972-01-25 | United Aircraft Corp | Cooling means for reflecting device |
US4408833A (en) * | 1982-01-13 | 1983-10-11 | The United States Of America As Represented By The Secretary Of The Air Force | Hot pressed and diffusion bonded laser mirror heat exchanger |
US6426968B1 (en) * | 1982-05-04 | 2002-07-30 | United Technologies Corporation | Hybrid optical mirror |
DE10200243A1 (de) | 2002-01-05 | 2003-07-17 | Zeiss Carl Smt Ag | Verfahren zum Ansprengen von optischen Elementen auf einem Gegenelement |
JP3944008B2 (ja) * | 2002-06-28 | 2007-07-11 | キヤノン株式会社 | 反射ミラー装置及び露光装置及びデバイス製造方法 |
EP1387054B1 (en) * | 2002-07-31 | 2012-07-25 | Canon Kabushiki Kaisha | Cooling apparatus for an optical element, exposure apparatus comprising said cooling apparatus, and device fabrication method |
JP2004080025A (ja) | 2002-07-31 | 2004-03-11 | Canon Inc | 冷却装置及び方法、当該冷却装置を有する露光装置 |
JP2004354655A (ja) | 2003-05-29 | 2004-12-16 | Dainippon Printing Co Ltd | 露光用反射鏡及び基板の露光装置 |
CN1288752C (zh) * | 2004-02-06 | 2006-12-06 | 中国科学院广州能源研究所 | 硅基微通道热交换器 |
DE102006024810A1 (de) | 2006-05-27 | 2007-11-29 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage sowie adaptiver Spiegel hierfür |
JP5524067B2 (ja) * | 2007-10-09 | 2014-06-18 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 光学素子の温度制御装置 |
US8425060B2 (en) * | 2007-11-09 | 2013-04-23 | Nikon Corporation | Self-correcting optical elements for high-thermal-load optical systems |
DE102009039400A1 (de) * | 2009-08-31 | 2011-03-03 | Carl Zeiss Laser Optics Gmbh | Reflektives optisches Element zur Verwendung in einem EUV-System |
NL2006913A (en) | 2010-07-16 | 2012-01-17 | Asml Netherlands Bv | Lithographic apparatus and method. |
DE102011004446A1 (de) | 2011-02-21 | 2012-08-23 | Carl Zeiss Smt Gmbh | Gekühltes optisches Element |
DE102011005778A1 (de) * | 2011-03-18 | 2012-09-20 | Carl Zeiss Smt Gmbh | Optisches Element |
JP2014225639A (ja) * | 2013-04-16 | 2014-12-04 | キヤノン株式会社 | ミラーユニット及び露光装置 |
-
2015
- 2015-11-04 KR KR1020177019259A patent/KR102492655B1/ko active IP Right Grant
- 2015-11-04 WO PCT/EP2015/075716 patent/WO2016091486A1/en active Application Filing
- 2015-11-04 NL NL2015718A patent/NL2015718A/en unknown
- 2015-11-04 JP JP2017525599A patent/JP6643337B2/ja active Active
- 2015-11-04 CN CN201580066792.5A patent/CN107003621B/zh active Active
- 2015-11-04 US US15/525,626 patent/US10216101B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN107003621A (zh) | 2017-08-01 |
CN107003621B (zh) | 2019-01-11 |
US10216101B2 (en) | 2019-02-26 |
KR102492655B1 (ko) | 2023-01-26 |
JP2017538962A (ja) | 2017-12-28 |
WO2016091486A1 (en) | 2016-06-16 |
KR20170094390A (ko) | 2017-08-17 |
US20180239252A1 (en) | 2018-08-23 |
NL2015718A (en) | 2016-09-20 |
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