JP6641291B2 - パターン付けされた封止材を伴うハイブリッドチップオンボードledモジュール - Google Patents
パターン付けされた封止材を伴うハイブリッドチップオンボードledモジュール Download PDFInfo
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- JP6641291B2 JP6641291B2 JP2016564436A JP2016564436A JP6641291B2 JP 6641291 B2 JP6641291 B2 JP 6641291B2 JP 2016564436 A JP2016564436 A JP 2016564436A JP 2016564436 A JP2016564436 A JP 2016564436A JP 6641291 B2 JP6641291 B2 JP 6641291B2
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- 239000008393 encapsulating agent Substances 0.000 title claims description 43
- 239000000463 material Substances 0.000 claims description 29
- 239000003566 sealing material Substances 0.000 claims description 25
- 230000003287 optical effect Effects 0.000 claims description 15
- 238000005538 encapsulation Methods 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 229920001296 polysiloxane Polymers 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 8
- 239000003086 colorant Substances 0.000 description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14
- 239000000565 sealant Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
- H05B47/10—Controlling the light source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/10—Controlling the intensity of the light
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
- F21Y2105/14—Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Planar Illumination Modules (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Optical Filters (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Devices (AREA)
Description
本発明は、アメリカ合衆国エネルギー省(DOE)により授与された契約(No. DE-EE0005099)に基づく米国政府支持によりなされたものである。
Claims (13)
- 光モジュールであって、
第1の色の第1の複数の発光素子と、
第2の色の第2の複数の発光素子と、
前記第1の色の第3の複数の発光素子と、
その上に前記第1、第2及び第3の複数の発光素子を配列した基板と、
前記第1の複数の発光素子の各々の発光素子の上に位置づけられた第1の封止材、及び前記第2の複数の発光素子及び第3の複数の発光素子の各々の発光素子の上に位置づけられた第2の封止材であり複数のドームを有する第2の封止材を含む、封止層であって、前記第1の封止材が、前記第2の封止材内の波長変換材料の濃度よりも実質的に高い濃度の波長変換材料を含み、前記ドームの間の領域を充填している、封止層と、
を有する光モジュール。 - 請求項1に記載の光モジュールであり、さらに
当該光モジュールの全体的出力、及び前記第1の複数の発光素子の発光素子と前記第2及び第3の複数の発光素子の発光素子との光出力比を制御するコントローラ
を含み、
前記コントローラが、電力を分配することにより、当該光モジュールの全体的出力、及び前記第1の複数の発光素子の発光素子と前記第2の複数の発光素子の発光素子との光出力比を制御する、
光モジュール。 - 前記第2の封止材の中の波長変換材料の濃度が実質的にゼロである、請求項1に記載の光モジュール。
- 前記第2の封止材が、前記第1の封止材の中に含まれない散乱材を含む、請求項1に記載の光モジュール。
- 前記第1の封止材のプロフィール形状が、前記第2の封止材のプロフィールとは異なる、請求項1に記載の光モジュール。
- 前記第1の色の発光素子が青色光を放出し、前記第2の色の発光素子が赤色光を放出する、請求項1に記載の光モジュール。
- 前記第1及び第2の複数の発光素子が、基板上に互い違いのパターンで配列されている、請求項1に記載の光モジュール。
- 前記第1の封止材及び前記第2の封止材が基板上に位置する包囲体内に含まれる、請求項1に記載の光モジュール。
- 基板上の前記第1及び第2の複数の発光素子の間隔が一様でない、請求項1に記載の光モジュール。
- 光モジュールを製造する方法であって、
第1の色の第1の複数の発光素子、第2の色の第2の複数の発光素子及び前記第1の色の第3の複数の発光素子を基板上に位置づけるステップと、
第1、第2及び第3の複数の発光素子の上に、封止層を位置づけるステップであり、
前記封止層が、前記第1の複数の発光素子の各々の発光素子の上に位置づけられた第1の封止材、及び前記第2の複数の発光素子及び第3の複数の発光素子の各々の発光素子の上に位置づけられた、複数のドームを含む第2の封止材を含み、前記第1の封止材が、前記ドームの間の領域を充填し、前記第2の封止材内の波長変換材料の濃度よりも実質的に高い濃度の波長変換材料を含む、ステップと、
を含む方法。 - 前記の封止層を位置づけるステップが、部分的に硬化したシリコーンシートを積層するステップを含む、請求項10に記載の方法。
- 前記第2の封止材が、前記第1の封止材の中に含まれない散乱材を含む、請求項10に記載の方法。
- 前記第1の封止材のプロフィール形状が、前記第2の封止材のプロフィールとは異なる、請求項10に記載の方法。
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JP2019237634A JP6898422B2 (ja) | 2014-01-21 | 2019-12-27 | パターン付けされた封止材を伴うハイブリッドチップオンボードledモジュール |
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US201461929530P | 2014-01-21 | 2014-01-21 | |
US61/929,530 | 2014-01-21 | ||
PCT/IB2014/064070 WO2015110875A1 (en) | 2014-01-21 | 2014-08-26 | Hybrid chip-on-board led module with patterned encapsulation |
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JP2017506003A JP2017506003A (ja) | 2017-02-23 |
JP2017506003A5 JP2017506003A5 (ja) | 2017-10-05 |
JP6641291B2 true JP6641291B2 (ja) | 2020-02-05 |
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US (3) | US9905737B2 (ja) |
EP (1) | EP3097588B1 (ja) |
JP (2) | JP6641291B2 (ja) |
KR (1) | KR102265771B1 (ja) |
CN (1) | CN105917466B (ja) |
TW (1) | TWI656664B (ja) |
WO (1) | WO2015110875A1 (ja) |
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US20160329472A1 (en) | 2016-11-10 |
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EP3097588B1 (en) | 2021-02-24 |
KR20160111980A (ko) | 2016-09-27 |
US10490710B2 (en) | 2019-11-26 |
WO2015110875A1 (en) | 2015-07-30 |
US11075327B2 (en) | 2021-07-27 |
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US20200127176A1 (en) | 2020-04-23 |
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US20180175256A1 (en) | 2018-06-21 |
TWI656664B (zh) | 2019-04-11 |
TW201530828A (zh) | 2015-08-01 |
EP3097588A1 (en) | 2016-11-30 |
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