JP6635466B2 - 有機半導体素子 - Google Patents
有機半導体素子 Download PDFInfo
- Publication number
- JP6635466B2 JP6635466B2 JP2017050785A JP2017050785A JP6635466B2 JP 6635466 B2 JP6635466 B2 JP 6635466B2 JP 2017050785 A JP2017050785 A JP 2017050785A JP 2017050785 A JP2017050785 A JP 2017050785A JP 6635466 B2 JP6635466 B2 JP 6635466B2
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- Japan
- Prior art keywords
- organic semiconductor
- strain
- semiconductor device
- semiconductor layer
- mobility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 140
- 239000013078 crystal Substances 0.000 claims description 42
- 239000010409 thin film Substances 0.000 claims description 21
- 239000000969 carrier Substances 0.000 claims description 13
- -1 polycyclic compound Chemical class 0.000 claims description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 5
- 230000006835 compression Effects 0.000 claims description 4
- 238000007906 compression Methods 0.000 claims description 4
- 150000000565 5-membered heterocyclic compounds Chemical class 0.000 claims description 3
- 150000002391 heterocyclic compounds Chemical class 0.000 claims 1
- 230000007723 transport mechanism Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 8
- 125000000217 alkyl group Chemical group 0.000 description 3
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Description
有機半導体を用いた有機半導体素子であって、
前記有機半導体は、単結晶の薄膜として形成されており、
少なくとも前記有機半導体に歪みを与えたときのキャリアの移動度に基づいて作動する、
ことを特徴とする。
Claims (6)
- 有機半導体を用いた有機半導体素子であって、
前記有機半導体は、少なくとも1つの不飽和の五員複素環式化合物と複数のベンゼン環とによる4環以上の多環化合物の単結晶の薄膜として形成され、キャリアの移動度が5cm 2 /Vs以上の高移動度有機半導体におけるキャリアの輸送メカニズムであるバンド伝導性を有し、
前記不飽和の五員複素環式化合物の両脇には、少なくとも1つの前記ベンゼン環が配置されており、
前記有機半導体に対して1つの方向のみに圧縮応力が作用することによって少なくとも前記有機半導体に対して与えられる歪みが変化したときのキャリアの移動度に基づいて作動する、
ことを特徴とする有機半導体素子。 - 請求項1記載の有機半導体素子であって、
前記有機半導体に対して前記1つの方向のみに圧縮応力を作用させることによって前記有機半導体に対して基準となる所定の歪みを与えたときのキャリアの移動度と、前記有機半導体に対して前記1つの方向のみに圧縮応力を作用させることによって前記有機半導体に対して前記所定の歪みとは異なる歪みを与えたときのキャリアの移動度とに基づいて作動する、
有機半導体素子。 - 請求項1または2記載の有機半導体素子であって、
前記多環化合物は、屈曲した分子構造を有する、
有機半導体素子。 - 請求項1ないし3のうちのいずれか1つの請求項に記載の有機半導体素子であって、
前記有機半導体は、厚さが200nm以下の薄膜として形成されている、
有機半導体素子。 - 請求項1ないし4のうちのいずれか1つの請求項に記載の有機半導体素子であって、
前記有機半導体に与える歪みは、圧縮方向で10%以下の範囲内である、
有機半導体素子。 - 請求項1ないし5のうちのいずれか1つの請求項に記載の有機半導体素子であって、
前記有機半導体は、次式(1)〜(9)のうちのいずれかの1つの骨格を有する多環化合物の単結晶の薄膜として形成されている、
有機半導体素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017050785A JP6635466B2 (ja) | 2017-03-16 | 2017-03-16 | 有機半導体素子 |
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---|---|---|---|
JP2017050785A JP6635466B2 (ja) | 2017-03-16 | 2017-03-16 | 有機半導体素子 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015015744A Division JP6116018B2 (ja) | 2015-01-29 | 2015-01-29 | 有機半導体素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017126773A JP2017126773A (ja) | 2017-07-20 |
JP2017126773A5 JP2017126773A5 (ja) | 2017-08-31 |
JP6635466B2 true JP6635466B2 (ja) | 2020-01-22 |
Family
ID=59365583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017050785A Active JP6635466B2 (ja) | 2017-03-16 | 2017-03-16 | 有機半導体素子 |
Country Status (1)
Country | Link |
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JP (1) | JP6635466B2 (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006046521A1 (ja) * | 2004-10-25 | 2006-05-04 | Matsushita Electric Industrial Co., Ltd. | 電子デバイスおよびその製造方法、ならびにそれを用いた電子機器 |
JP4316669B2 (ja) * | 2006-06-07 | 2009-08-19 | パナソニック株式会社 | 半導体素子の製造方法および電子デバイスの製造方法 |
JP5478189B2 (ja) * | 2009-10-16 | 2014-04-23 | 学校法人東海大学 | 大気安定性に優れた有機トランジスタ |
JP2011242153A (ja) * | 2010-05-14 | 2011-12-01 | Citizen Holdings Co Ltd | 歪センサおよび歪み測定方法 |
JP2014048793A (ja) * | 2012-08-30 | 2014-03-17 | Sato Holdings Corp | 情報記録媒体及び情報記録方法 |
JP6590361B2 (ja) * | 2014-03-20 | 2019-10-16 | パイクリスタル株式会社 | 有機半導体膜及びその製造方法 |
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2017
- 2017-03-16 JP JP2017050785A patent/JP6635466B2/ja active Active
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JP2017126773A (ja) | 2017-07-20 |
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