JP6635277B2 - 移動体装置及び露光装置 - Google Patents
移動体装置及び露光装置 Download PDFInfo
- Publication number
- JP6635277B2 JP6635277B2 JP2018095988A JP2018095988A JP6635277B2 JP 6635277 B2 JP6635277 B2 JP 6635277B2 JP 2018095988 A JP2018095988 A JP 2018095988A JP 2018095988 A JP2018095988 A JP 2018095988A JP 6635277 B2 JP6635277 B2 JP 6635277B2
- Authority
- JP
- Japan
- Prior art keywords
- mark
- measurement
- wafer
- light
- axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005259 measurement Methods 0.000 claims description 183
- 238000001514 detection method Methods 0.000 claims description 56
- 238000006073 displacement reaction Methods 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 description 180
- 230000003287 optical effect Effects 0.000 description 38
- 238000000034 method Methods 0.000 description 29
- 238000005286 illumination Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 239000011295 pitch Substances 0.000 description 12
- 238000004364 calculation method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000000737 periodic effect Effects 0.000 description 8
- 238000013507 mapping Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000012886 linear function Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 238000000018 DNA microarray Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
以下、第1の実施形態について、図1〜図11に基づいて説明する。
次に第2の実施形態に係る露光装置について説明する。本第2の実施形態の露光装置は、前述の第1の実施形態に係る露光装置10とは、ウエハステージ上の計測マークの位置が異なるのみなので、以下相違点に付いてのみ説明し、第1の実施形態と同じ構成、及び機能を有する要素については、第1の実施形態と同一の符号を用いるととともに、その説明を省略する。
Claims (8)
- 第1軸及び前記第1軸と交差する第2軸を含む2次元平面内を移動可能であり、物体が載置される移動体と、
前記移動体に載置された前記物体のマークに対して計測光を前記第1軸の方向へ走査可能であるとともに、前記マークからの光を受光可能なマーク検出系と、
前記マーク検出系を用いて前記物体のマークの検出を行う制御系と、を備え、
前記制御系は、前記移動体を前記第1軸の方向に移動させつつ、前記物体のマークに対して前記マーク検出系からの前記計測光を第1軸の方向へ走査し、前記マーク検出系による前記マークからの光の受光結果に基づいて、前記マークを検出するとともに、該マークと前記計測光との位置関係を計測し、計測した前記位置関係に基づいて前記計測光と前記移動体との相対位置を調整する移動体装置。 - 前記物体は、第1マークとしての前記マークと、前記第1マークと異なる第2マークとを有し、
前記制御系は、前記相対位置を調整し、前記移動体を前記第1軸の方向に移動させながら前記第2マークを検出する制御を行う請求項1に記載の移動体装置。 - 前記第2マークは、前記第1マークの検出以降に検出されるマークである請求項2に記載の移動体装置。
- 前記第1マークには、2つ以上のマークが含まれ、
前記制御系は、前記2つ以上のマークそれぞれについて位置ずれ量を求め、前記位置ずれ量に基づいて前記移動体と前記計測光の相対位置の調整を行う請求項2又は3に記載の移動体装置。 - 前記相対位置の調整は、前記第1軸と交差する第2軸の方向に関する相対位置の調整を含む請求項1〜4のいずれか一項に記載の移動体装置。
- 前記移動体の前記2次元平面内の位置情報を計測可能な位置計測系をさらに備え、
前記制御系は、前記位置計測系と前記マーク検出系とを用いて前記マークの位置情報を検出する請求項1〜5のいずれか一項に記載の移動体装置。 - 前記マーク検出系は、前記マークに照射される計測光を検出可能であり、
前記制御系は、前記計測光の検出結果に基づいて該マークと前記計測光との位置関係を求める請求項1〜6のいずれか一項に記載の移動体装置。 - 前記移動体にマークが設けられた物体が載置される請求項1〜7のいずれか一項に記載の移動体装置を備え、
前記移動体に載置された前記物体に、エネルギビームを照射して前記物体を露光する露光装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014259758 | 2014-12-24 | ||
JP2014259758 | 2014-12-24 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016566392A Division JP6344623B2 (ja) | 2014-12-24 | 2015-12-22 | 移動体の制御方法、露光方法、デバイス製造方法、移動体装置、及び露光装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019229309A Division JP7147738B2 (ja) | 2014-12-24 | 2019-12-19 | 計測装置及び計測方法、並びに露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018139010A JP2018139010A (ja) | 2018-09-06 |
JP6635277B2 true JP6635277B2 (ja) | 2020-01-22 |
Family
ID=56150529
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016566392A Active JP6344623B2 (ja) | 2014-12-24 | 2015-12-22 | 移動体の制御方法、露光方法、デバイス製造方法、移動体装置、及び露光装置 |
JP2018095988A Active JP6635277B2 (ja) | 2014-12-24 | 2018-05-18 | 移動体装置及び露光装置 |
JP2019229309A Active JP7147738B2 (ja) | 2014-12-24 | 2019-12-19 | 計測装置及び計測方法、並びに露光装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016566392A Active JP6344623B2 (ja) | 2014-12-24 | 2015-12-22 | 移動体の制御方法、露光方法、デバイス製造方法、移動体装置、及び露光装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019229309A Active JP7147738B2 (ja) | 2014-12-24 | 2019-12-19 | 計測装置及び計測方法、並びに露光装置 |
Country Status (7)
Country | Link |
---|---|
US (6) | US10036968B2 (ja) |
EP (1) | EP3240020A4 (ja) |
JP (3) | JP6344623B2 (ja) |
KR (4) | KR102658509B1 (ja) |
CN (3) | CN117631484A (ja) |
TW (2) | TWI693667B (ja) |
WO (1) | WO2016104513A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111045302B (zh) * | 2014-12-24 | 2022-12-30 | 株式会社尼康 | 测量装置及方法、曝光装置及方法、以及器件制造方法 |
CN117631484A (zh) * | 2014-12-24 | 2024-03-01 | 株式会社尼康 | 测量***、测量方法及曝光装置 |
JP7383732B2 (ja) * | 2019-07-08 | 2023-11-20 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射スポットの中心を決定するための方法、センサ、及びステージ装置 |
CN110926333B (zh) * | 2019-11-28 | 2021-10-15 | 上海华力集成电路制造有限公司 | 电子扫描方法以及电子扫描装置 |
CN112987504B (zh) * | 2021-02-04 | 2023-10-20 | 哈尔滨工业大学 | 焦点校准***及基于光束扫描角度调制的焦点校准方法 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2814538B2 (ja) * | 1989-04-14 | 1998-10-22 | 株式会社ニコン | 位置合わせ装置及び位置合わせ方法 |
JP2906433B2 (ja) * | 1989-04-25 | 1999-06-21 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
US5151750A (en) | 1989-04-14 | 1992-09-29 | Nikon Corporation | Alignment apparatus |
JP3084773B2 (ja) * | 1991-04-04 | 2000-09-04 | 株式会社ニコン | 走査露光装置 |
JP3209190B2 (ja) * | 1991-07-10 | 2001-09-17 | 株式会社ニコン | 露光方法 |
KR100300618B1 (ko) | 1992-12-25 | 2001-11-22 | 오노 시게오 | 노광방법,노광장치,및그장치를사용하는디바이스제조방법 |
JP3412704B2 (ja) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
JPH07142325A (ja) * | 1993-06-23 | 1995-06-02 | Nikon Corp | 位置合わせ装置 |
JPH07248208A (ja) * | 1994-03-11 | 1995-09-26 | Nikon Corp | 位置合わせ装置 |
US5751403A (en) * | 1994-06-09 | 1998-05-12 | Nikon Corporation | Projection exposure apparatus and method |
JPH07335529A (ja) * | 1994-06-09 | 1995-12-22 | Nikon Corp | 投影露光装置 |
AU2549899A (en) * | 1998-03-02 | 1999-09-20 | Nikon Corporation | Method and apparatus for exposure, method of manufacture of exposure tool, device, and method of manufacture of device |
CN100578876C (zh) | 1998-03-11 | 2010-01-06 | 株式会社尼康 | 紫外激光装置以及使用该紫外激光装置的曝光装置和曝光方法 |
WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
SG124257A1 (en) * | 2000-02-25 | 2006-08-30 | Nikon Corp | Exposure apparatus and exposure method capable of controlling illumination distribution |
US20020041377A1 (en) * | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
US6611316B2 (en) | 2001-02-27 | 2003-08-26 | Asml Holding N.V. | Method and system for dual reticle image exposure |
TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
KR20130010039A (ko) | 2002-12-10 | 2013-01-24 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
JP2005258352A (ja) * | 2004-03-15 | 2005-09-22 | Sharp Corp | 露光装置及び露光方法 |
JP2007027219A (ja) * | 2005-07-13 | 2007-02-01 | Nikon Corp | 最適化方法及び表示方法 |
SG170010A1 (en) * | 2006-02-21 | 2011-04-29 | Nikon Corp | Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure appararus and method, and device manufacturing method |
KR20150036734A (ko) * | 2006-12-27 | 2015-04-07 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 디바이스의 제조 방법 |
JP2009094512A (ja) * | 2007-10-09 | 2009-04-30 | Asml Netherlands Bv | 位置合わせ方法及び装置、リソグラフィ装置、計測装置、及びデバイス製造方法 |
US9256140B2 (en) * | 2007-11-07 | 2016-02-09 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method with measurement device to measure movable body in Z direction |
US8711327B2 (en) * | 2007-12-14 | 2014-04-29 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
NL1036476A1 (nl) * | 2008-02-01 | 2009-08-04 | Asml Netherlands Bv | Alignment mark and a method of aligning a substrate comprising such an alignment mark. |
JP2010075991A (ja) * | 2008-09-29 | 2010-04-08 | Fujifilm Corp | レーザ加工装置 |
NL2008110A (en) * | 2011-02-18 | 2012-08-21 | Asml Netherlands Bv | Measuring method, measuring apparatus, lithographic apparatus and device manufacturing method. |
JP5992103B2 (ja) | 2012-07-30 | 2016-09-14 | エーエスエムエル ネザーランズ ビー.ブイ. | 位置測定装置、位置測定方法、リソグラフィ装置およびデバイス製造方法 |
US9778025B2 (en) | 2012-08-16 | 2017-10-03 | Asml Netherlands B.V. | Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method |
CN117631484A (zh) * | 2014-12-24 | 2024-03-01 | 株式会社尼康 | 测量***、测量方法及曝光装置 |
-
2015
- 2015-12-22 CN CN202311612860.6A patent/CN117631484A/zh active Pending
- 2015-12-22 KR KR1020237016210A patent/KR102658509B1/ko active IP Right Grant
- 2015-12-22 CN CN201580076893.0A patent/CN107615473B/zh active Active
- 2015-12-22 EP EP15873081.2A patent/EP3240020A4/en active Pending
- 2015-12-22 JP JP2016566392A patent/JP6344623B2/ja active Active
- 2015-12-22 CN CN202110353528.7A patent/CN113093484B/zh active Active
- 2015-12-22 WO PCT/JP2015/085850 patent/WO2016104513A1/ja active Application Filing
- 2015-12-22 KR KR1020177020376A patent/KR102009098B1/ko active IP Right Grant
- 2015-12-22 KR KR1020217026630A patent/KR102533302B1/ko active IP Right Grant
- 2015-12-22 KR KR1020197022761A patent/KR102294481B1/ko active IP Right Grant
- 2015-12-24 TW TW104143486A patent/TWI693667B/zh active
- 2015-12-24 TW TW109112317A patent/TW202028693A/zh unknown
-
2017
- 2017-06-20 US US15/627,966 patent/US10036968B2/en active Active
-
2018
- 2018-05-18 JP JP2018095988A patent/JP6635277B2/ja active Active
- 2018-06-27 US US16/019,662 patent/US10365568B2/en active Active
-
2019
- 2019-06-13 US US16/440,157 patent/US10520839B2/en active Active
- 2019-11-29 US US16/699,190 patent/US11003100B2/en active Active
- 2019-12-19 JP JP2019229309A patent/JP7147738B2/ja active Active
-
2021
- 2021-04-16 US US17/232,939 patent/US11567419B2/en active Active
-
2022
- 2022-10-07 US US17/961,781 patent/US11994811B2/en active Active
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6635277B2 (ja) | 移動体装置及び露光装置 | |
US20220317581A1 (en) | Measurement device and measurement method, exposure apparatus and exposure method, and device manufacturing method | |
WO2016125790A1 (ja) | 計測装置及び計測方法、露光装置及び露光方法、並びにデバイス製造方法 | |
JP2012114279A (ja) | 合焦装置、露光装置、及びデバイス製造方法 | |
JP2016143849A (ja) | 露光方法、デバイス製造方法、及び露光装置 | |
JP2016149405A (ja) | 計測装置、露光装置、デバイス製造方法、及び計測方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180525 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180525 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190313 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190313 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190507 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190611 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191120 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191203 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6635277 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |