JP6615106B2 - 構造化基板を備える発光ダイオード - Google Patents
構造化基板を備える発光ダイオード Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 58
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
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- 229910052757 nitrogen Inorganic materials 0.000 description 11
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- 238000005422 blasting Methods 0.000 description 3
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- 239000010703 silicon Substances 0.000 description 3
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 230000015572 biosynthetic process Effects 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- ODNHQUQWHMGWGT-UHFFFAOYSA-N iridium;oxotin Chemical compound [Ir].[Sn]=O ODNHQUQWHMGWGT-UHFFFAOYSA-N 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Led Devices (AREA)
Description
emitting lasers)を含む半導体発光デバイスは、現在入手できる最大効率光源に属する。可視スペクトルにわたり動作可能な高輝度発光デバイスの製造において現在興味ある材料系は、III-V族半導体、特に、III-窒素材料とも呼ばれる、ガリウム、アルミニウム、イリジウム及び窒素の二元、三元、四元合金を含む。代表的には、サファイア、シリコンカーバイド、シリコン、III-窒素その他の好適な基板上に、金属有機化学蒸着(MOCVD)、分子ビームエピタキシ(MBE)その他のエピタキシャル技法によって、異なる化合物及びドーパント濃度の半導体層の積み重ねをエピタキシャル成長させることにより、III-窒素発光デバイスが製造される。該積み重ねはしばしば、基板上で形成した、例えばシリコンでドーピングした1層以上のn型層、n型単一層又複数層の上で形成した、活性領域内の1層以上の発光層、及び活性領域上で形成した、例えばMgでドーピングした1層以上のp型層を含む。n型及びp型領域上に、電気的接続が形成される。
Claims (14)
- 半導体発光デバイスであって、
第1表面及び該第1表面に対向する第2表面を有する基板と、
前記基板の前記第1表面上に位置し、n型領域とp型領域との間に挟まれた発光領域、前記n型領域に結合されたnコンタクト、前記p型領域に結合された透明導電層及び該透明導電層に結合されたpコンタクトを有する半導体構造体であり、前記nコンタクト及び前記pコンタクトが前記第1表面に対向する当該半導体構造体の表面上に形成された、半導体構造体と、
前記基板内に位置する空洞であり、前記基板の前記第2表面から延び、傾斜した側壁を有する空洞と、
前記nコンタクト及び前記pコンタクトの上に位置し、全反射を増大させる高屈折率材料であり、少なくとも1.5の屈折率を有する高屈折率材料と、
を含む半導体発光デバイス。 - 請求項1に記載の半導体発光デバイスであり、
前記基板が、前記第1表面及び前記第2表面に垂直な第1方向に厚さを有し、
前記第1方向に測定した前記空洞の最深部が、前記基板の前記第1方向の前記厚さの少なくとも70%である、
半導体発光デバイス。 - 請求項1に記載の半導体発光デバイスであり、
前記空洞が、第1軸線に沿った三角形断面を有する、
半導体発光デバイス。 - 請求項3に記載の半導体発光デバイスであり、
前記空洞が、前記第1軸線に垂直な第2軸線に沿った三角形断面を有する、
半導体発光デバイス。 - 請求項4に記載の半導体発光デバイスであり、
方形形状である半導体発光デバイス。 - 請求項1に記載の半導体発光デバイスであり、
前記空洞が、前記空洞の容積プラス前記基板の体積から成る体積の少なくとも50%を含む、
半導体発光デバイス。 - 請求項1に記載の半導体発光デバイスであり、
当該半導体発光デバイスが長方形形状であり、
前記基板の最大厚の点における厚さが、長方形半導体発光デバイスの短辺の長さの少なくとも90%である、
半導体発光デバイス。 - 請求項1に記載の半導体発光デバイスであり、
前記空洞の傾斜した側壁と前記第1表面に垂直な平面との角度が30°以下である、
半導体発光デバイス。 - 請求項1に記載の半導体発光デバイスであり、
前記第1表面が織り目化してある、
半導体発光デバイス。 - 請求項9に記載の半導体発光デバイスであり、
前記透明導電層に対向する前記高屈折率材料の表面が織り目化してある、
半導体発光デバイス。 - 請求項10に記載の半導体発光デバイスであり、
前記高屈折率材料の織り目化した表面が、格子状に配列された複数の3側面ピラミッドを含む、
半導体発光デバイス。 - 半導体発光デバイスであり、
第1表面及び該第1表面に対向する第2表面を有する基板と、
前記基板の前記第1表面上に位置し、n型領域とp型領域との間に挟まれた発光領域、前記n型領域に結合されたnコンタクト、前記p型領域に結合された透明導電層及び該透明導電層に結合されたpコンタクトを有する半導体構造体であり、前記nコンタクト及び前記pコンタクトが前記第1表面に対向する当該半導体構造体の表面上に形成された、半導体構造体と、
前記基板内に位置する空洞であり、前記基板の前記第2表面から延び、傾斜した側壁を有する空洞と、
前記nコンタクト及び前記pコンタクトの上に位置し、全反射を増大させる高屈折率材料と、
前記半導体構造体及び前記基板の上に位置する封止材と、
を含み、
前記封止材が当該半導体発光デバイスに直接接触し高屈折率を有する、半導体発光デバイス。 - 請求項12に記載の半導体発光デバイスであり、
前記封止材が光学素子に形状づけられている、
半導体発光デバイス。 - 請求項13に記載の半導体発光デバイスであり、
前記光学素子がレンズである、
半導体発光デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201461936362P | 2014-02-06 | 2014-02-06 | |
US61/936,362 | 2014-02-06 | ||
PCT/IB2015/050323 WO2015118419A1 (en) | 2014-02-06 | 2015-01-16 | Light emitting diode with structured substrate |
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JP2017506431A JP2017506431A (ja) | 2017-03-02 |
JP6615106B2 true JP6615106B2 (ja) | 2019-12-04 |
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Country | Link |
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US (1) | US9941444B2 (ja) |
EP (1) | EP3103143B1 (ja) |
JP (1) | JP6615106B2 (ja) |
KR (1) | KR102289345B1 (ja) |
CN (1) | CN105940505A (ja) |
TW (1) | TWI656661B (ja) |
WO (1) | WO2015118419A1 (ja) |
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CN107808920A (zh) * | 2017-10-23 | 2018-03-16 | 吴香辉 | Led封装结构 |
CN112038461B (zh) * | 2020-07-17 | 2021-11-05 | 华灿光电(苏州)有限公司 | 发光二极管外延片、芯片及其制备方法 |
CN113903845B (zh) * | 2021-08-25 | 2023-12-22 | 华灿光电(浙江)有限公司 | 微型发光二极管芯片及其制备方法 |
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JP2017506431A (ja) | 2017-03-02 |
EP3103143B1 (en) | 2023-09-06 |
US20160336485A1 (en) | 2016-11-17 |
WO2015118419A1 (en) | 2015-08-13 |
CN105940505A (zh) | 2016-09-14 |
KR102289345B1 (ko) | 2021-08-13 |
KR20160119162A (ko) | 2016-10-12 |
EP3103143A1 (en) | 2016-12-14 |
US9941444B2 (en) | 2018-04-10 |
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