JP6608604B2 - Chamfered substrate and method for manufacturing liquid crystal display device - Google Patents
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Description
本発明は、シリコン、サファイア、化合物、ガラス等の様々な素材、特に半導体ウエーハ、カバーガラス等の板状被加工材の端面を高精度に面取り加工された基板及び液晶表示装置に関し、被加工材の平面形状に円形以外の直線部を有するものに好適である。 The present invention relates to a substrate and a liquid crystal display device in which end surfaces of various materials such as silicon, sapphire, compound, glass, etc., in particular, a plate-like workpiece such as a semiconductor wafer, a cover glass, etc. are chamfered with high accuracy. It is suitable for those having a straight portion other than a circle in the planar shape.
近年、ウエーハの品質向上の要求が強く、ウエーハ端面（エッジ部）の加工状態が重要視され、半導体デバイス等の作製に使用されるシリコンウエーハ等の半導体ウエーハは、ハンドリングによるチッピングを防止するため、縁部を研削することで面取り加工が行われ、研磨による鏡面面取り加工が行われている。つまり、半導体製造工程において、ウエーハ製造からデバイス製造に至るまで、エッジ特性の品質改善は必要不可欠なプロセスとなっている。 In recent years, there has been a strong demand for wafer quality improvement, and the processing state of the wafer end face (edge part) has been regarded as important, and semiconductor wafers such as silicon wafers used in the manufacture of semiconductor devices and the like prevent chipping due to handling. A chamfering process is performed by grinding the edge, and a mirror chamfering process is performed by polishing. That is, in the semiconductor manufacturing process, the quality improvement of the edge characteristics is an indispensable process from the wafer manufacturing to the device manufacturing.
シリコン等は固くてもろく、ウエーハの端面がスライシング時の鋭利なままでは、続く処理工程での搬送や位置合わせなどの取り扱い時に容易に割れたり欠けたりして、断片がウエーハ表面を傷つけたり汚染したりする。これを防ぐため、切り出されたウエーハの端面をダイヤモンドでコートされた面取り砥石で面取りする。この時、バラツキのある外周の直径を合わせ、オリエンテーションフラット（ＯＦ）の幅の長さを合わせる事や、ノッチと呼ばれる微少な切り欠きの寸法を合わせる事も含まれる。 Silicon and other materials are hard and brittle, and if the edge of the wafer remains sharp during slicing, it can easily crack or chip during handling such as transport and alignment in subsequent processing steps, and fragments can damage or contaminate the wafer surface. Or In order to prevent this, the end face of the cut wafer is chamfered with a chamfering grindstone coated with diamond. At this time, the diameter of the outer periphery with variations is matched to match the width of the orientation flat (OF), and the size of a small notch called a notch is also matched.
また、従来の液晶パネルとカバーガラスの間にタッチセンサーガラスをサンドイッチしていた構造からカバーガラスにタッチセンサを一体化した構造が多くなっている。そこでは、大きなガラス基板を所定のカバーガラスの大きさに切断してから、面取り加工を行い、その後に化学強化を行い、その後にマスキング印刷やセンサー電極の形成を行っていた。 In addition, a structure in which a touch sensor glass is sandwiched between a conventional liquid crystal panel and a cover glass has been increasingly integrated with a cover glass. In this case, a large glass substrate was cut into a predetermined cover glass size, then chamfered, and then chemically strengthened, followed by masking printing and sensor electrode formation.
さらに、通常の研削ではレジン砥石の回転軸に対してウエーハの主面が垂直となる状態で面取り部を研削するが、この場合、面取り部には円周方向の研削痕が発生し易い。そこで、ウエーハに対して例えばレジンボンド砥石（レジン砥石）を傾けてウエーハの面取り部を研削する、いわゆるヘリカル研削を行うことが知られている。 Further, in normal grinding, the chamfered portion is ground in a state where the main surface of the wafer is perpendicular to the rotation axis of the resin grindstone. In this case, circumferential chamfer marks are likely to be generated in the chamfered portion. Therefore, it is known to perform so-called helical grinding in which a chamfered portion of a wafer is ground by tilting a resin bond grindstone (resin grindstone) with respect to the wafer, for example.
ヘリカル研削を行うと、通常研削に比べ面取り部の加工歪みを低減させるだけでなく、ウエーハの面取り部と砥石との接触領域が増えて面取り部の表面粗さが改善される効果が得られる。 When the helical grinding is performed, not only the processing distortion of the chamfered portion is reduced as compared with the normal grinding, but also an effect that the contact area between the chamfered portion of the wafer and the grindstone is increased and the surface roughness of the chamfered portion is improved.
さらに、レジン砥石等により半導体ウエーハの面取り部をヘリカル研削する際、面取り部の連続加工を行うとレジン砥石の溝の上下の角度が徐々に変化する結果、ウエーハの面取り部の上下非対称性が一層大きくなる。そのため、上下非対称の形状の溝が周囲に形成された第１の砥石の溝で円盤状のツルアーの縁部を研削してツルアーの縁部を上下非対称の溝形状に成形し、ツルアーと第２の砥石とを相対的に傾けて該第２の砥石の周囲に溝を形成し、第２の砥石により溝方向に対してウエーハを相対的に傾けて上下略対称のレジン砥石を得て、面取り部を精研削することが知られ、例えば特許文献１に記載されている。 Furthermore, when the chamfered portion of a semiconductor wafer is helically ground with a resin grindstone or the like, if the chamfered portion is continuously processed, the vertical angle of the groove of the resin grindstone gradually changes, resulting in a further vertical asymmetry of the chamfered portion of the wafer. growing. Therefore, the edge of the disc-shaped truer is ground with the groove of the first grindstone formed with the groove of the asymmetrical shape up and down to form the edge of the truer into the asymmetrical groove shape, and the second A groove is formed around the second whetstone by relatively tilting the whetstone, and a wafer is tilted relative to the groove direction by the second whetstone to obtain a substantially symmetrical resin whetstone, and chamfered. It is known to finely grind parts, and is described in Patent Document 1, for example.
また、面取り用砥石の回転軸をウエーハの回転軸に対して所定角度傾斜させた面取り方法において、外周研削砥石にウエーハ外周部と、ＯＦ部用の加工溝を形成することが知られ、例えば特許文献２に記載されている。 Further, in a chamfering method in which the rotation axis of the chamfering grindstone is inclined at a predetermined angle with respect to the rotation axis of the wafer, it is known to form a wafer outer peripheral portion and a processing groove for the OF portion on the outer peripheral grinding grindstone. It is described in Document 2.
さらに、ノッチ部の面取り幅を一定にするため、砥石を面取り中にウエーハの厚さ方向に相対的に移動させることが知られ、特許文献３に記載されている。 Furthermore, in order to make the chamfer width of the notch portion constant, it is known that the grindstone is relatively moved in the thickness direction of the wafer during chamfering, and is described in Patent Document 3.
上記従来技術において、薄型化、軽量化されたスマートフォンやタブレットにおいて、大きなガラス基板を所定のカバーガラスの大きさに切断してから面取り加工を行い、その後に化学強化を行う方法では、切断されたガラス基板の一つ一つに対して化学強化及び次の工程である、印刷やセンサー電極の形成を行なわなければならず、生産効率が著しく低くならざるを得なかった。しかし、化学強化を行った大きなガラス基板にマスキング印刷して、センサー電極を形成し、その後に切断、面取り加工する方法では、面取りの加工品質、加工面粗さ、マイクロクラックの発生などがガラス基板の端面強度に直接影響し、通常の面取り研削では困難であった。
また、特許文献１に記載のものでは、上下非対称の形状の溝が周囲に形成された第１の砥石が必要で、その形状の決定が困難である。また、円形のウエーハの場合は全周で同じ形状で済むので一意的に決定できるが、ＯＦの付いたウエーハ基板、角に円弧が付いた矩形又は多角形のウエーハ、基板、カバーガラス等で円形部と非円形部がある場合には、さらに困難であるばかりか、レジン砥石の溝の上下の角度の変化も円形部から非円形部へ移る位置、角部で大きくなり、全周をヘリカル研削することは極めて困難であった。つまり、角を有する基板（ワーク）の角部では砥石の溝の上面と下面のうちの片方のみ当たる片当たりが発生し、良好な面取りができなかった。
In the above-described conventional technology, in a smartphone or tablet that has been reduced in thickness and weight, the chamfering process is performed after cutting a large glass substrate into a predetermined cover glass size, and then the method of performing chemical strengthening is cut. Each glass substrate must be chemically strengthened and the next step, printing and sensor electrode formation, must be performed, and production efficiency must be significantly reduced. However, by masking and printing on a large glass substrate that has been chemically strengthened to form a sensor electrode, and then cutting and chamfering, the chamfering quality, surface roughness, and generation of microcracks are the glass substrate. This has a direct effect on the strength of the end face of the steel and is difficult to perform with normal chamfering.
Moreover, in the thing of patent document 1, the 1st grindstone in which the groove | channel of the asymmetrical shape of an up-down direction was formed is required, and the determination of the shape is difficult. In the case of a circular wafer, the same shape can be used for the entire circumference, so it can be determined uniquely, but it can be determined by using a wafer substrate with an OF, a rectangular or polygonal wafer with an arc at a corner, a substrate, a cover glass, etc. If there is a part and a non-circular part, it is not only more difficult, but also the change in the vertical angle of the groove of the resin grindstone becomes larger at the position where it moves from the circular part to the non-circular part, and the entire circumference is helically ground. It was extremely difficult to do. In other words, at the corner portion of the substrate (work) having a corner, one-side contact with only one of the upper surface and the lower surface of the grindstone groove occurred, and good chamfering could not be performed.
特許文献２に記載のものでは、研削工程が複雑化し、円形部が主体で非円形部が少ない場合には良いが、矩形又は多角形の場合には適用が困難であった。 The one described in Patent Document 2 is good when the grinding process is complicated and the main part is a circular part and the number of non-circular parts is small, but application is difficult in the case of a rectangle or a polygon.
特許文献３に記載のものでは、砥石を面取り中にウエーハの厚さ方向に相対的に移動させながら行わなければならないため、面取りの精度を上げるためにはウエーハあるいは砥石の厚さ方向のコントロールが複雑で困難であった。 In the thing of patent document 3, since it must carry out, moving a grindstone relatively in the thickness direction of a wafer during chamfering, in order to raise the accuracy of chamfering, control of the thickness direction of a wafer or a grindstone is required. It was complicated and difficult.
本発明の目的は、上記従来技術の課題を解決し、矩形又は多角形のウエーハ、基板、カバーガラス等で円形部と非円形部とを有するものでも端面及び面取り斜面のヘリカル研削を容易に可能とし、端面強度を向上し、形状崩れ、マイクロクラックの発生などを少なくして、化学強化を行った後に面取り加工することを実現することにある。 The object of the present invention is to solve the above-mentioned problems of the prior art, and to easily perform helical grinding of end faces and chamfered slopes even with rectangular or polygonal wafers, substrates, cover glasses and the like having circular and non-circular portions. It is to realize end chamfering after chemical strengthening by improving end face strength, reducing shape collapse and generation of microcracks.
上記目的を達成するため、本発明は、平面形状が矩形状とされ、端面を研削砥石に形成された研削溝で面取り加工する基板の製造方法であって、全周に渡って、前記端面の厚さ方向の中央部を３〜１５°でヘリカル研削し、前記端面の上部及び下部を面取り角度でヘリカル研削する。 In order to achieve the above object, the present invention provides a substrate manufacturing method in which a planar shape is rectangular, and the end surface is chamfered with a grinding groove formed on a grinding wheel. The central portion in the thickness direction is helically ground at 3 to 15 °, and the upper and lower portions of the end face are helically ground at a chamfer angle.
また、上記において、大きな基板のまま化学強化処理を施した後、所定の形状に切断し、前記ヘリカル研削を行うことが望ましい。In the above, it is desirable that the chemical strengthening process is performed on the large substrate, then the substrate is cut into a predetermined shape and the helical grinding is performed.
さらに、上記において、前記端面の上部を前記研削溝の上面斜面で研削し、その後、前記基板を前記研削砥石に対して相対的に前記厚さ方向に下降させて再び研削、
あるいは、前記端面の下部を前記研削溝の下面斜面で研削し、その後、前記基板を前記研削砥石に対して相対的に前記厚さ方向に上昇させて再び研削することが望ましい。
Further, in the above, the upper part of the end face is ground by the upper surface slope of the grinding groove , and then the substrate is lowered relative to the grinding wheel in the thickness direction and again ground.
Alternatively, it is desirable to grind the lower part of the end face with the lower slope of the grinding groove , and then raise the substrate relative to the grinding wheel in the thickness direction and grind again .
さらに、上記において、前記端面の上部あるいは下部を全周に渡って前記研削溝で１周するように研削し、その後、前記基板を前記研削砥石に対して相対的に前記厚さ方向に下降あるいは上昇させて、さらに１周研削することが望ましい。 Further, in the above, the upper or lower portion of the end face is ground so as to make one round with the grinding groove over the entire circumference, and then the substrate is lowered relative to the grinding wheel in the thickness direction or It is desirable to raise and grind one more round .
さらに、上記において、前記端面の加工は、それぞれ前記端面の上部の研削、中央部の研削、下部の研削とで行うことが望ましい。 Further, in the above, it is preferable that the processing of the end face is performed by grinding the upper part of the end face, grinding the central part, and grinding the lower part, respectively .
さらに、上記において、前記上部の研削、中央部の研削、下部の研削は、それぞれ前記端面を全周に渡って前記研削溝で１周するように行うことが望ましい。 Further, in the above, it is preferable that the upper grinding, the central grinding, and the lower grinding are performed so that each of the end faces makes one round with the grinding groove over the entire circumference .
さらに、上記において、前記基板は、その平面にマスキング印刷、センサー電極の形成を行うことが望ましい。 Further, in the above, it is desirable that the substrate is subjected to masking printing and sensor electrode formation on the plane .
また、本発明は、平面形状が矩形状とされ、端面を研削砥石に形成された研削溝で面取り加工されたカバーガラスを備え、液晶パネルの中にタッチセンサを組み込んだ液晶表示装置の製造方法であって、前記カバーガラスを全周に渡って、前記端面の厚さ方向の中央部が３〜１５°でヘリカル研削し、上部及び下部を面取り角度でヘリカル研削する。The present invention also provides a method for manufacturing a liquid crystal display device comprising a cover glass having a rectangular planar shape, chamfered with a grinding groove formed on a grinding wheel, and a touch sensor incorporated in the liquid crystal panel. Then, the cover glass is helically ground at a central portion in the thickness direction of the end face at 3 to 15 ° over the entire circumference, and the upper and lower portions are helically ground at a chamfer angle.
本発明によれば、基板は平面形状が矩形状とされ、そのほぼ全周に渡って、端面の厚さ方向の中央部が３〜１５°でヘリカル研削され、さらに端面の上部及び下部が面取り角度でヘリカル研削されているので、矩形又は多角形の被加工材であっても、表面粗さを良好にし、形状崩れを少なくすることができる。その結果、ガラス基板の端面強度が向上され、化学強化を行った後に切断、面取り加工することを可能とし、インセル型の液晶表示装置等の生産効率を向上できる。 According to the present invention, the substrate has a rectangular planar shape, and the central portion in the thickness direction of the end surface is helically ground at 3 to 15 ° over the entire circumference, and the upper and lower portions of the end surface are chamfered. Since it is helically ground at an angle, even if it is a rectangular or polygonal workpiece, the surface roughness can be improved and the shape collapse can be reduced. As a result, the end face strength of the glass substrate is improved, and it is possible to perform cutting and chamfering after chemical strengthening, thereby improving the production efficiency of an in-cell type liquid crystal display device and the like.
以下に、本発明の実施形態について図面を参照して詳細に説明する。この実施形態により発明が限定されるものでなく、実施形態における構成要素には当業者が容易に想定できるもの、あるいは実質的に同一のものも含まれる。 Embodiments of the present invention will be described below in detail with reference to the drawings. The invention is not limited to the embodiments, and constituent elements in the embodiments include those that can be easily assumed by those skilled in the art or those that are substantially the same.
図１は本発明の一実施形態に係る面取り装置の主要部示す平面図である。面取り装置は、主に供給回収部２０、加工部１０を有し、その他図示していないが、プリアライメント部、洗浄部、後測定部、搬送部等から構成される。 FIG. 1 is a plan view showing a main part of a chamfering apparatus according to an embodiment of the present invention. The chamfering apparatus mainly includes a supply / recovery unit 20 and a processing unit 10, and includes a pre-alignment unit, a cleaning unit, a post-measurement unit, a transport unit, and the like, although not shown.
ウエーハ加工工程は、スライス→面取り→ラップ→エッチング→ドナーキラー→精面取りの順で行われ、工程間には汚れを取り除くため、各種洗浄が用いられる。シリコン等は固くてもろく、ウエーハの端面がスライシング時の鋭利なままでは、続く処理工程での搬送や位置合わせなどの取り扱い時に容易に割れたり欠けたりして、断片がウエーハ表面を傷つけたり汚染したりする。これを防ぐため、面取り工程では切り出されたウエーハの端面をダイヤモンドでコートされた面取り砥石で面取りする。 The wafer processing step is performed in the order of slicing → chamfering → lapping → etching → donor killer → fine chamfering, and various cleanings are used to remove dirt between the processes. Silicon and other materials are hard and brittle, and if the edge of the wafer remains sharp during slicing, it can easily crack or chip during handling such as transport and alignment in subsequent processing steps, and fragments can damage or contaminate the wafer surface. Or In order to prevent this, in the chamfering process, the end surface of the cut wafer is chamfered with a chamfering grindstone coated with diamond.
面取り工程は、ラッピング工程の後に行なわれることもある。この時、バラツキのある外周の直径を合わせ、オリエンテーションフラット（ＯＦ）の幅の長さを合わせる事や、ノッチと呼ばれる微少な切り欠きの寸法を合わせる事も含まれる。 The chamfering process may be performed after the lapping process. At this time, the diameter of the outer periphery with variations is matched to match the width of the orientation flat (OF), and the size of a small notch called a notch is also matched.
供給回収部２０は、面取り加工するウエーハＷをウエーハカセット３０から加工部１０に供給すると共に、面取り加工されたウエーハをウエーハカセット３０に回収する。この動作は供給回収ロボット４０で行われる。ウエーハカセット３０はカセットテーブル３１にセットされ、面取り加工するウエーハＷが多数枚収納されている。供給回収ロボット４０はウエーハカセット３０からウエーハＷを１枚ずつ取り出したり、面取り加工されたウエーハをウエーハカセット３０に収納したりする。 The supply / recovery unit 20 supplies the wafer W to be chamfered from the wafer cassette 30 to the processing unit 10 and collects the chamfered wafer to the wafer cassette 30. This operation is performed by the supply / recovery robot 40. The wafer cassette 30 is set on a cassette table 31 and stores a large number of wafers W to be chamfered. The supply / recovery robot 40 takes out the wafers W one by one from the wafer cassette 30 and stores the chamfered wafers in the wafer cassette 30.
供給回収ロボット４０は３軸回転型の搬送アーム５０を備えており、搬送アーム５０は、その上面部に図示しない吸着パッドを備えている。搬送アーム４０は、吸着パッドでウエーハＷの裏面を真空吸着してウエーハＷを保持する。すなわち、この供給回収ロボット４０の搬送アーム５０は、ウエーハＷを保持した状態で前後、昇降移動、及び旋回することができ、この動作を組み合わせることによりウエーハＷの搬送を行う。 The supply / recovery robot 40 includes a three-axis rotation type transfer arm 50, and the transfer arm 50 includes a suction pad (not shown) on an upper surface thereof. The transfer arm 40 holds the wafer W by vacuum-sucking the back surface of the wafer W with a suction pad. That is, the transfer arm 50 of the supply / recovery robot 40 can move up and down, move up and down, and turn while holding the wafer W, and the wafer W is transferred by combining these operations.
加工部１０はウエーハ面取り装置の正面部に配置されており、ウエーハＷの外周面取りの全加工、すなわち、粗加工から仕上げ加工までを行う。この加工部１０は、ウエーハ送り装置６０、外周粗研削装置６２、ウエーハＷを搬送するトランスファーアーム６３及び外周精研削装置６１から構成されている。 The processing unit 10 is disposed in the front portion of the wafer chamfering apparatus, and performs all processing of the outer peripheral chamfering of the wafer W, that is, roughing to finishing. The processing unit 10 includes a wafer feeding device 60, an outer periphery rough grinding device 62, a transfer arm 63 that conveys the wafer W, and an outer periphery fine grinding device 61.
図２は、加工部１０の構成を示す斜視図、図３は平面図であり、ウエーハ送り装置６０は、ウエーハＷを吸着保持するチャックテーブル（ウエーハテーブル）６６を有している。このチャックテーブル６６は、図示しない駆動手段に駆動されることにより、前後方向（Ｙ軸方向）、左右方向（Ｘ軸方向）、及び上下方向（Ｚ軸方向）の各方向に移動するとともに、チャックテーブル駆動モータ６５に駆動されることにより中心軸（θ軸）回りに回転する。 FIG. 2 is a perspective view showing the configuration of the processing unit 10, FIG. 3 is a plan view, and the wafer feeding device 60 has a chuck table (wafer table) 66 that holds the wafer W by suction. The chuck table 66 is driven by driving means (not shown) to move in the front-rear direction (Y-axis direction), the left-right direction (X-axis direction), and the vertical direction (Z-axis direction). By being driven by the table drive motor 65, it rotates around the central axis (θ axis).
外周粗研削装置６２は、ウエーハ送り装置６０のチャックテーブル６６に対してＹ軸方向に所定距離離れた位置に配置される。この外周粗研削装置６２は、外周粗研モータ６７に駆動されて回転する外周粗研スピンドル６８を有している。外周粗研スピンドル６８は、図示しない駆動手段に駆動されることにより前後方向（Ｙ軸方向）及び上下方向（Ｚ軸方向）の各方向に移動可能に構成される。 The outer peripheral rough grinding device 62 is disposed at a position separated from the chuck table 66 of the wafer feeding device 60 by a predetermined distance in the Y-axis direction. This outer peripheral rough grinding device 62 has an outer peripheral rough grinding spindle 68 that is driven by an outer peripheral rough grinding motor 67 to rotate. The outer periphery roughing spindle 68 is configured to be movable in the front-rear direction (Y-axis direction) and the vertical direction (Z-axis direction) by being driven by a driving unit (not shown).
外周粗研スピンドル６８には、ウエーハＷの外周を粗加工（粗研削）する外周粗研削砥石６９が装着され、その回転軸となる。外周粗研削砥石６９は、その外周面に複数の外周粗研削用溝が形成されており（総形砥石）、この溝にウエーハＷの外周を押し当てることにより、ウエーハＷの外周が粗加工（粗研削）される。 A peripheral rough grinding spindle 69 for roughing (rough grinding) the outer periphery of the wafer W is mounted on the peripheral rough grinding spindle 68, and serves as a rotation axis thereof. The outer peripheral rough grinding wheel 69 has a plurality of outer peripheral rough grinding grooves formed on the outer peripheral surface thereof (general shape grindstone). By pressing the outer periphery of the wafer W against this groove, the outer periphery of the wafer W is roughened ( Rough grinding).
外周精研削装置６１は、ウエーハ送り装置６０のチャックテーブル６６に対してＸ軸方向に所定距離だけ離れた位置に配置される。この外周精研削装置６１は、外周精研モータ７０に駆動されて回転する外周精研スピンドル７１を有している。外周精研スピンドル７１は、図示しない駆動手段に駆動されることにより左右方向（Ｘ軸方向）及び上下方向（Ｚ軸方向）の各方向に移動可能に構成される。外周精研スピンドル７１には、ウエーハＷの外周を仕上げ加工（精研削）する外周精研削砥石７２が装着され、その回転軸となる。 The peripheral grinding device 61 is disposed at a position away from the chuck table 66 of the wafer feeding device 60 by a predetermined distance in the X-axis direction. The outer peripheral fine grinding device 61 has an outer peripheral fine grinding spindle 71 that is driven by the outer peripheral fine grinding motor 70 to rotate. The outer peripheral precision spindle 71 is configured to be movable in the left and right direction (X-axis direction) and the vertical direction (Z-axis direction) by being driven by a driving means (not shown). The outer peripheral fine grinding spindle 71 is equipped with an outer peripheral fine grinding wheel 72 for finishing the outer periphery of the wafer W (fine grinding), and serves as a rotating shaft thereof.
外周精研削砥石７２は、その外周面に外周精研削用溝が形成されており（総形砥石）、この溝にウエーハＷの外周を押し当てることにより、ウエーハＷの外周が仕上げ加工される。 The peripheral grinding wheel 72 has a circumferential grinding groove formed on its outer peripheral surface (total grinding wheel), and the outer circumference of the wafer W is finished by pressing the outer circumference of the wafer W against this groove.
このとき、外周精研スピンドル７１の回転軸をチャックテーブル６６の回転軸に対してウエーハＷの外周の接線方向に３〜１５°、望ましくは６〜１０°傾斜させた状態で行うヘリカル研削によってウエーハＷの外周面取りの仕上げ加工を行う。 At this time, the wafer is subjected to helical grinding performed by tilting the rotation axis of the outer peripheral fine spindle 71 with respect to the rotation axis of the chuck table 66 in the tangential direction of the outer periphery of the wafer W by 3 to 15 °, preferably 6 to 10 °. Finish the outer chamfering of W.
これにより、砥粒の運動方向がウエーハＷの外周の運動方向と交差し、接触面積が増大すること等より、砥石摩耗が抑制され、外周の形状崩れ等を低減できるため、通常の研削に比べて加工面（研削面）の粗さが良好となる。 As a result, the movement direction of the abrasive grains intersects with the movement direction of the outer periphery of the wafer W, the contact area increases, etc., so that the wear of the grinding wheel is suppressed and the shape deformation of the outer periphery can be reduced. As a result, the roughness of the processed surface (grind surface) is improved.
次に、加工部１０の動作について説明する。加工開始前の待機状態では、チャックテーブル６６に保持されるウエーハＷは、その中心がチャックテーブル６６の回転軸と一致するように配置される。このとき、ウエーハＷのＯＦ部は所定方向（本例ではＹ軸方向）を向くように配置される。 Next, the operation of the processing unit 10 will be described. In the standby state before the start of processing, the wafer W held on the chuck table 66 is arranged so that the center thereof coincides with the rotation axis of the chuck table 66. At this time, the OF portion of the wafer W is disposed so as to face a predetermined direction (in this example, the Y-axis direction).
また、外周粗研削砥石６９及び外周精研削砥石７２は、ウエーハＷからそれぞれ所定距離離れた位置に位置している。具体的には、外周粗研削砥石６９の回転中心はウエーハＷの回転中心に対してＹ軸方向に所定距離離れた位置に配置され、かつ外周精研削砥石７２の回転中心はウエーハＷに対してＸ軸方向に所定距離離れた位置に配置される。 Further, the outer peripheral rough grinding wheel 69 and the outer peripheral fine grinding wheel 72 are located at positions away from the wafer W by a predetermined distance. Specifically, the rotation center of the outer peripheral rough grinding wheel 69 is disposed at a position separated from the rotation center of the wafer W by a predetermined distance in the Y-axis direction, and the rotation center of the outer peripheral grinding wheel 72 is relative to the wafer W. It is arranged at a position separated by a predetermined distance in the X-axis direction.
まず始めに、アライメント動作が行われる。このアライメント動作では、チャックテーブル６６に保持されたウエーハＷと外周粗研削砥石６９及び外周精研削砥石７２との上下方向（Ｚ軸方向）について相対的な位置関係が調整される。 First, an alignment operation is performed. In this alignment operation, the relative positional relationship between the wafer W held on the chuck table 66, the outer peripheral rough grinding wheel 69, and the outer peripheral fine grinding wheel 72 in the vertical direction (Z-axis direction) is adjusted.
アライメント動作が完了したら、外周粗研モータ６９が駆動される。次に、外周粗研削砥石６９による研削（粗加工）を開始する。具体的には、外周粗研削装置６２のＹ軸モータ（不図示）が駆動され、外周粗研スピンドル６８がＹ軸方向に沿ってチャックテーブル６６に向かって送られる。 When the alignment operation is completed, the outer periphery roughing motor 69 is driven. Next, grinding (rough machining) by the outer periphery rough grinding wheel 69 is started. Specifically, a Y-axis motor (not shown) of the outer peripheral rough grinding device 62 is driven, and the outer peripheral rough grinding spindle 68 is fed toward the chuck table 66 along the Y-axis direction.
外周粗研削砥石６９としては、例えば、直径２０２ｍｍのダイヤモンド砥粒のメタルボンド砥石で、粒度＃８００であるものを使用することができる。また、外周砥石スピンドル６８は、ボールベアリングを用いたビルトインモータ駆動のスピンドルで、所定の回転速度、例えば回転速度８，０００ｒｐｍで回転される。 As the outer peripheral rough grinding grindstone 69, for example, a diamond bond metal bond grindstone having a diameter of 202 mm and having a particle size of # 800 can be used. The outer peripheral grinding wheel spindle 68 is a built-in motor driven spindle using a ball bearing and is rotated at a predetermined rotational speed, for example, a rotational speed of 8,000 rpm.
チャックテーブル６６に向かって外周粗研スピンドル６８が送られると、ウエーハＷの外周が外周粗研削砥石６９に形成された外周粗研削用の研削溝に接触し、ウエーハＷの外周部が外周粗研削砥石６９により研削されて、ウエーハＷの外周面取りの粗加工が開始される。 When the outer periphery roughing spindle 68 is fed toward the chuck table 66, the outer periphery of the wafer W comes into contact with the outer peripheral rough grinding grinding groove formed on the outer peripheral rough grinding wheel 69, and the outer periphery of the wafer W is outer peripheral rough grinding. After being ground by the grindstone 69, rough machining of the outer peripheral chamfer of the wafer W is started.
外周粗研削砥石６９による粗加工が開始された後、始めは図２のウエーハＷは円形であるので、チャックテーブル６６に保持されたウエーハＷが一定速度で矢印方向に回転を開始する。この回転角度、つまり加工点が直線部となるＯＦ部に至ると、外周粗研スピンドル６８をＹ方向である、チャックテーブル６６に向かう方向の送り量を多くすると共に、外周粗研スピンドル６８をＸ方向に直線移動させ直線部を加工する。その後、直線部の加工を終了すると、再び、チャックテーブル６６に保持された板状のウエーハＷを一定速度で矢印方向に回転させ、残りの円形部を研削して外周粗研削砥石６９による粗加工を終了する。 Since the wafer W in FIG. 2 is initially circular after the rough machining by the outer peripheral rough grinding wheel 69 is started, the wafer W held on the chuck table 66 starts to rotate in the arrow direction at a constant speed. When this rotational angle, that is, the OF portion where the machining point is a straight line portion, the feed amount in the direction toward the chuck table 66 in the Y direction is increased, and the outer periphery spindle 68 is moved in the X direction. Move the straight line in the direction to process the straight part. Thereafter, when the processing of the linear portion is finished, the plate-like wafer W held on the chuck table 66 is rotated again in the direction of the arrow at a constant speed, the remaining circular portion is ground, and rough processing by the outer peripheral rough grinding wheel 69 is performed. Exit.
次に、外周精研削砥石７２による仕上げ加工が同様に行われる。外周精研削砥石７２は、ダイヤモンド砥粒のレジンボンド砥石が適している。また、外周精研スピンドル７２の回転軸をチャックテーブル６６の回転軸に対してウエーハＷの外周の接線方向に３〜１５°、望ましくは６〜１０°傾斜させた状態でウエーハＷの外周面取りの仕上げ加工が行われる。 Next, the finishing process by the outer peripheral grinding wheel 72 is performed in the same manner. As the outer peripheral grinding wheel 72, a resin bond grinding wheel of diamond abrasive grains is suitable. Further, the outer peripheral chamfering of the wafer W is performed with the rotation axis of the outer peripheral fine spindle 72 inclined to the tangential direction of the outer periphery of the wafer W with respect to the rotation axis of the chuck table 66 by 3 to 15 °, preferably 6 to 10 °. Finishing is performed.
さらに、外周精研削砥石７２の面取り用加工溝はツルアーによって形成されるが、詳しい説明を省略する。また、外周粗研削砥石６９としては、例えば、Ｆｅ、Ｃｒ、Ｃｕ等の金属粉等を主成分とし、ダイヤモンド砥粒を混ぜて成形したものが用いられる。ツルアーの材質は、外周粗研削砥石６９によって加工することができる一方、外周精研削砥石７２を研削することができるものを採用する。 Furthermore, the chamfering groove of the outer peripheral grinding wheel 72 is formed by a truer, but detailed description thereof is omitted. Further, as the outer peripheral rough grinding grindstone 69, for example, a material which is mainly composed of metal powder such as Fe, Cr, Cu or the like and mixed with diamond abrasive grains is used. As the material of the truer, a material which can be processed by the outer peripheral rough grinding wheel 69 and can grind the outer peripheral grinding wheel 72 is adopted.
例えば炭化珪素からなる砥粒を、必要に応じて充填剤等も加えてフェノール樹脂で結合し、これを円盤状のツルアーに成形したものが望ましい。外周精研削砥石７２の材質は、ツルアーによって研削することで周囲に研削溝７４を形成することができる一方、形成された研磨によってシリコンウエーハ等の面取り部を精研削することができるものを用いる。例えば、フェノール樹脂、エポキシ樹脂、ポリイミド樹脂、ポリスチレン樹脂又はポリエチレン樹脂等を主成分とし、ダイヤモンド砥粒や立方晶窒化ホウ素砥粒を混ぜて成形したものが望ましい。 For example, it is desirable that abrasive grains made of silicon carbide be bonded with a phenol resin with a filler or the like if necessary, and molded into a disk-shaped truer. As the material of the outer peripheral fine grinding stone 72, a material capable of finely grinding a chamfered portion such as a silicon wafer by the formed polishing while the grinding groove 74 can be formed around by grinding with a truer. For example, it is desirable to use a material mainly composed of phenol resin, epoxy resin, polyimide resin, polystyrene resin or polyethylene resin, and formed by mixing diamond abrasive grains or cubic boron nitride abrasive grains.
また、外周精研削砥石７２としては、例えば、直径５０ｍｍのダイヤモンド砥粒のレジンボンド砥石で、粒度＃３０００のものが用いられる。外周精研スピンドル７１はエアーベアリングを用いたビルトインモータ駆動のスピンドルで、回転速度３５，０００ｒｐｍで回転される。 Further, as the peripheral fine grinding stone 72, for example, a resin bond grindstone of diamond abrasive grains having a diameter of 50 mm and having a grain size of # 3000 is used. The outer peripheral precision spindle 71 is a built-in motor driven spindle using an air bearing and is rotated at a rotational speed of 35,000 rpm.
図４は被加工材が円形でなく、矩形の場合での加工部の構成を示す斜視図であり、図５は同様に平面図である。被加工材が円形でなく、矩形の場合は、図４、５に示すように、直線部の加工が主となる。 FIG. 4 is a perspective view showing a configuration of a processing portion when the workpiece is not circular but rectangular, and FIG. 5 is a plan view similarly. When the workpiece is not a circle but a rectangle, as shown in FIGS.
スマートフォンやタブレットの薄型化、軽量化が進むにつれてガラス基板、カバーガラス、あるいはサファイア、セラミックスが表面に使用され、端面強度が重要となり、鏡面研削において、砥粒によるチッピングの抑制と良好な面粗さが要求される。面取りの加工品質、加工面粗さ、マイクロクラックの発生などはガラス基板の端面強度に直接影響する。 As smartphones and tablets become thinner and lighter, glass substrates, cover glass, sapphire, and ceramics are used on the surface, and end face strength is important. In mirror grinding, chipping suppression and good surface roughness are achieved. Is required. Chamfering processing quality, processing surface roughness, microcracking, etc. directly affect the end face strength of the glass substrate.
図４、５はスマートフォンやタブレットにおける矩形状のカバーガラスの面取り加工を示しており、カバーガラスにタッチセンサを一体化した構造とし、ガラス基板にマスキング印刷、センサー電極を形成し、その後に切断、面取り加工が行われる。そして、面取り加工は、外周精研削装置６１のＹ軸モータ（不図示）が駆動され、外周精研スピンドル７１がＹ軸方向に沿ってチャックテーブル７３に向かって送られることで開始される。 4 and 5 show chamfering processing of a rectangular cover glass in a smartphone or tablet, and a structure in which a touch sensor is integrated with a cover glass, masking printing on a glass substrate, forming a sensor electrode, and then cutting, Chamfering is performed. Then, the chamfering is started by driving a Y axis motor (not shown) of the outer peripheral grinding device 61 and feeding the outer peripheral spindle 71 toward the chuck table 73 along the Y axis direction.
チャックテーブル７３に向かって外周精研スピンドル７１が送られると、カバーガラス（あるいはウエーハ）Ｗの直線部が外周精研削砥石７２に形成された面取り用加工溝である外周精研削用溝に接触し、カバーガラスＷの外周部が外周精研削砥石７２によりヘリカル研削されて、カバーガラスＷの外周面取りの加工が開始される。外周精研削砥石７２による加工が開始された後、図４、５のカバーガラスＷは矩形であるので、チャックテーブル７３に保持されたカバーガラスＷがＸ軸方向に一定速度で移動を開始する。加工点が角部に到達すると、チャックテーブル７３を９０°回転して、Ｘ軸方向に直線移動を開始し次の直線部を加工する。以下、同様にカバーガラスＷの全外周を加工していく。 When the outer periphery precision spindle 71 is fed toward the chuck table 73, the straight portion of the cover glass (or wafer) W comes into contact with the outer periphery fine grinding groove, which is a chamfering groove formed on the outer periphery fine grinding wheel 72. Then, the outer peripheral portion of the cover glass W is helically ground by the outer peripheral fine grinding stone 72, and the processing of the outer peripheral chamfering of the cover glass W is started. After the processing by the peripheral grinding wheel 72 is started, the cover glass W in FIGS. 4 and 5 is rectangular, and therefore the cover glass W held on the chuck table 73 starts moving at a constant speed in the X-axis direction. When the processing point reaches the corner, the chuck table 73 is rotated by 90 °, and linear movement is started in the X-axis direction to process the next linear portion. Thereafter, the entire outer periphery of the cover glass W is processed similarly.
また、研削砥石は、ポーラスな表面を有する面取り砥石素材に飽和脂肪酸溶液と共に潤滑剤を供給し、表面を乾燥させて潤滑剤含浸砥石とし、この潤滑剤を含む砥石を研削時に水冷却して使用することが望ましい。これにより、砥石の切削点へ潤滑剤が確実に供給されて切削点温度を所定温度以下にすることができる。また、冷却液を水としたので、冷却液による環境汚染を防止できる。さらにウエーハ面取り装置では、砥石に潤滑剤を含浸させているので、長期にわたり潤滑剤を切削点に供給可能であり、冷却液を水としたので低温かつ環境に配慮した加工が可能となる。 Also, the grinding wheel is supplied with a saturated fatty acid solution and a lubricant to a chamfering wheel material having a porous surface, and the surface is dried to form a lubricant-impregnated grinding wheel. The grinding wheel containing this lubricant is cooled with water during grinding and used. It is desirable to do. Thereby, the lubricant can be reliably supplied to the cutting point of the grindstone, and the cutting point temperature can be set to a predetermined temperature or lower. Moreover, since the coolant is water, it is possible to prevent environmental pollution due to the coolant. Furthermore, in the wafer chamfering apparatus, since the grindstone is impregnated with the lubricant, the lubricant can be supplied to the cutting point over a long period of time, and the coolant is water, so that processing can be performed at low temperature and in consideration of the environment.
チャックテーブル７３は、図５に示すように矩形のカバーガラスＷの形状と同様の形状であるが、外周精研削砥石７２による加工時にカバーガラスＷ自体がやや弾性変形するようにカバーガラスＷよりも十分に小さくなり、カバーガラスＷはチャックテーブル７３よりオーバハングして保持されている。 The chuck table 73 has the same shape as that of the rectangular cover glass W as shown in FIG. 5, but the chuck table 73 is more elastic than the cover glass W so that the cover glass W itself is slightly elastically deformed when processed by the outer peripheral grinding wheel 72. The cover glass W is held sufficiently in an overhanging manner from the chuck table 73.
具体的には、チャックテーブル７３の大さきは、カバーガラスＷのＸ軸方向の中央からの距離をＱとし、チャックテーブル７３のＸ軸方向の中央からの距離をＰとすると、Ｑ＝（１.３〜１．７）Ｐ、より望ましくはＱ＝１.５ＰとすることがカバーガラスＷの吸着による固定及び研削加工の点から良い。つまり、カバーガラスＷの変形や撓み、歪みなどの加工精度への影響を避けると共に、加工時に被加工材、カバーガラスＷ自体がやや弾性変形し、外周精研削砥石７２が柔らかいレジンボンド砥石であることと相まって、その振れ等の衝撃を緩和する。Ｙ軸方向も同様であり、図５のＮ＝（１.３〜１．７）Ｈ、より望ましくはＮ＝１.５Ｈとすることが望ましい。つまり、チャックテーブル７３の形状は、被加工材の外周形状よりも小さく、縦横共に、カバーガラスＷの平面形状よりも０．６〜０．８倍が望ましい。なお、矩形のカバーガラスＷの形状は、縦×横が１２０ｍｍ×６０ｍｍ程度、厚みが０.５〜１.５ｍｍ程度とすると、矩形のチャックテーブル７３は８０ｍｍ×４０ｍｍ程度が望ましい。 Specifically, the size of the chuck table 73 is Q = (1) where Q is the distance from the center of the cover glass W in the X-axis direction and P is the distance from the center of the chuck table 73 in the X-axis direction. .3 to 1.7) P, more preferably, Q = 1.5P is preferable from the viewpoint of fixing and grinding by adsorption of the cover glass W. That is, while avoiding the influence on the processing accuracy such as deformation, bending, and distortion of the cover glass W, the workpiece, the cover glass W itself is slightly elastically deformed during processing, and the outer peripheral grinding wheel 72 is a soft resin bond wheel. Combined with this, it reduces the impact of such vibration. The same applies to the Y-axis direction, and it is desirable to set N = (1.3 to 1.7) H in FIG. 5, more preferably N = 1.5H. That is, the shape of the chuck table 73 is smaller than the outer peripheral shape of the workpiece, and is preferably 0.6 to 0.8 times larger than the planar shape of the cover glass W in both length and width. The rectangular cover glass W is preferably about 80 mm × 40 mm in the rectangular chuck table 73 when the length × width is about 120 mm × 60 mm and the thickness is about 0.5 to 1.5 mm.
外周精研スピンドル７２の回転軸をチャックテーブル７３に対してカバーガラスＷの外周の接線方向にθ＝３〜１５°、望ましくは６〜１０°傾斜しているので、カバーガラスＷは外周精研削砥石７２の研削溝７４に対してこの角度θで当接し、砥粒の運動方向がカバーガラスＷの運動方向と交差する。また、傾斜角度があまりに大きいと、研削抵抗の増大、端面における上下角部の欠け、キズなどの点で好ましくない。 Since the rotation axis of the outer peripheral fine spindle 72 is inclined with respect to the chuck table 73 in the tangential direction of the outer periphery of the cover glass W by θ = 3 to 15 °, preferably 6 to 10 °, the cover glass W is precisely polished on the outer periphery. The grindstone 72 contacts the grinding groove 74 at this angle θ, and the movement direction of the abrasive grains intersects the movement direction of the cover glass W. Further, if the inclination angle is too large, it is not preferable in terms of increase in grinding resistance, chipping of upper and lower corners on the end face, scratches, and the like.
図６は外周精研削砥石７２の研削溝７４と、被加工材Ｗとの関係を示す側面図であり、図に示すように、外周精研削砥石７２の研削溝７４の幅ｙは、外周精研削砥石７２の研削溝７４を角度θ傾けたとき、研削溝７４の上端部が被加工材Ｗの上面と当接する位置から被加工材Ｗの下面が研削溝７４の下端部に最も近づくが当接しない位置までの距離、つまり、研削溝７４を角度θ傾けたときの被加工材Ｗの見掛け厚み、図６で右端部からの左端部までの寸法ｙ0よりも広くｙ＞ｙ0となっている。ｙ0は、研削溝７４の直径をＤ、被加工材Ｗの厚さをｔとすると、おおよそＤｔａｎθ＋ｔ/ｃｏｓθとなる。研削溝７４の幅を広くする方法は予めツールイングするときの転写用の溝を広くしても良いし、ツールイング時のツルアーをＺ軸方向に上下に移動して研削溝７４を幅広く加工しても良い。 FIG. 6 is a side view showing the relationship between the grinding groove 74 of the peripheral grinding wheel 72 and the workpiece W. As shown in FIG. When the grinding groove 74 of the grinding wheel 72 is inclined at an angle θ, the lower surface of the workpiece W comes closest to the lower end of the grinding groove 74 from the position where the upper end of the grinding groove 74 contacts the upper surface of the workpiece W. The distance to the non-contact position, that is, the apparent thickness of the workpiece W when the grinding groove 74 is inclined by the angle θ, is larger than the dimension y0 from the right end to the left end in FIG. 6, and y> y0. . y0 is approximately Dtan θ + t / cos θ, where D is the diameter of the grinding groove 74 and t is the thickness of the workpiece W. The method of widening the width of the grinding groove 74 may be to widen the transfer groove when tooling in advance, or the grinding groove 74 may be processed widely by moving the tooling tool up and down in the Z-axis direction. May be.
次に、ヘリカル研削の加工手順を以下に説明する。
図６はカバーガラスＷの上面を加工している状態を示す側面図であり、チャックテーブル７３に向かって外周精研スピンドル７１が送られたとき、研削溝７４の右上端部の上面斜面７２ｕがカバーガラスＷの上面、図６で右上端部が当接して加工が開始され、その後、チャックテーブル７３に保持されたカバーガラスＷがＸ軸方向に一定速度で移動して面取りが行われる。
Next, the processing procedure of helical grinding will be described below.
FIG. 6 is a side view showing a state in which the upper surface of the cover glass W is being processed. When the outer peripheral precision spindle 71 is fed toward the chuck table 73, the upper surface slope 72u at the upper right end portion of the grinding groove 74 is shown. The upper surface of the cover glass W, the upper right end portion in FIG. 6 abuts, starts processing, and then the cover glass W held on the chuck table 73 moves at a constant speed in the X-axis direction to perform chamfering.
カバーガラスＷの下面は、研削溝７４がカバーガラスＷの見掛け厚みより幅広となっているので、当接しない。カバーガラスＷの厚み方向の中央部、主要部は外周精研削砥石７２の研削溝７４の円周部が当接してヘリカル研削される。加工点がカバーガラスＷの角のＲ部に到達すると、チャックテーブル７３が回転して、角部のＲを加工する。このときは円形部を研削するのと同様になり、接触領域が小さくなるので、研削溝７４の上面斜面の当接は弱くなり、厚み方向の中央部の研削が主となる。以下、同様にカバーガラスＷの外周を１周するまで加工していく。 Since the grinding groove 74 is wider than the apparent thickness of the cover glass W, the lower surface of the cover glass W does not contact. The central part and the main part of the cover glass W in the thickness direction are helically ground by contacting the circumferential part of the grinding groove 74 of the outer peripheral fine grinding stone 72. When the processing point reaches the corner R of the cover glass W, the chuck table 73 rotates to process the corner R. At this time, it becomes the same as grinding of the circular portion, and the contact area becomes small. Therefore, the contact of the upper surface slope of the grinding groove 74 becomes weak, and the central portion in the thickness direction is mainly ground. Hereinafter, similarly, the cover glass W is processed until it goes around once.
図７はカバーガラスＷの下面を加工している状態を示す側面図であり、上記の加工が１周した点で、図６の状態から外周精研削砥石７２をＺ軸方向に上昇、あるいはチャックテーブル７３をＺ軸方向に下降させ、研削溝７４の下面斜面がカバーガラスＷの下面、図７左下端部の下面斜面７２ｄが当接するようにする。つまり、研削砥石を被加工材に対して相対的に厚さ方向に上昇させる。その後、チャックテーブル７３に保持されたカバーガラスＷがＸ軸方向に一定速度で移動して２周目の面取りを行う。 FIG. 7 is a side view showing a state in which the lower surface of the cover glass W is being processed. At the point where the above processing is performed once, the outer peripheral grinding wheel 72 is raised in the Z-axis direction from the state of FIG. The table 73 is lowered in the Z-axis direction so that the lower surface slope of the grinding groove 74 is in contact with the lower surface of the cover glass W and the lower surface slope 72d at the lower left end in FIG. That is, the grinding wheel is raised relative to the workpiece in the thickness direction. Thereafter, the cover glass W held on the chuck table 73 moves at a constant speed in the X-axis direction to perform chamfering on the second round.
カバーガラスＷの上面は研削溝７４がカバーガラスＷの見掛け厚みより幅広となっているので、当接しない。カバーガラスＷの厚み方向の中央部、主要部は外周精研削砥石７２の研削溝７４の円周部が当接してヘリカル研削される。 Since the grinding groove 74 is wider than the apparent thickness of the cover glass W, the upper surface of the cover glass W does not contact. The central part and the main part of the cover glass W in the thickness direction are helically ground by contacting the circumferential part of the grinding groove 74 of the outer peripheral fine grinding stone 72.
以上のように、カバーガラスＷに対して外周精研削砥石７２の研削溝７４を角度θで傾斜させて当接し、砥粒の運動方向がカバーガラスＷの運動方向と交差するようにし、かつ、外周精研削砥石７２の研削溝７４の幅を被加工材に対して外周精研削砥石７２を角度θ傾けたときの被加工材の見掛け厚みよりも幅広とすること、外周精研削砥石７２をＺ軸方向に上下することにより、ＯＦ等の直線部、又は矩形、多角形等の材料の面取り加工にヘリカル研削を適用することが可能となる。これにより、端面の面粗さ、加工歪みを小さくし、高番手の砥石でも長時間の使用を可能にできる。 As described above, the grinding groove 74 of the outer peripheral fine grinding wheel 72 is brought into contact with the cover glass W while being inclined at an angle θ so that the movement direction of the abrasive grains intersects the movement direction of the cover glass W, and The width of the grinding groove 74 of the outer peripheral grinding wheel 72 is made wider than the apparent thickness of the workpiece when the outer circumferential grinding wheel 72 is tilted at an angle θ with respect to the workpiece. By moving up and down in the axial direction, helical grinding can be applied to chamfering of a linear portion such as OF or a material such as a rectangle or a polygon. Thereby, the surface roughness and processing distortion of the end face can be reduced, and even a high-quality grindstone can be used for a long time.
ここで、本発明者は、図６においてθの角度をより大きくして、カバーガラスＷの上面の右上端部が上面斜面７２ｕ当接し、かつ、カバーガラスＷの下面の左下端部に下面斜面７２ｄが当接するようにして研削を行う評価を実施した。すると、カバーガラスＷの角を研削する際、必ず、カバーガラスＷは、上面斜面７２ｕと下面斜面７２ｄとのうち片方しか当接できない状況が発生することを見いだした。このため、カバーガラスＷの角部においては、必ず上面か下面のうちのどちらかに研削が十分で無い部分が発生することが判明した。 Here, the inventor increases the angle θ in FIG. 6 so that the upper right end portion of the upper surface of the cover glass W comes into contact with the upper surface inclined surface 72u, and the lower surface inclined surface is in contact with the lower left end portion of the lower surface of the cover glass W. An evaluation was performed in which grinding was performed so that 72d abuts. Then, when grinding the corners of the cover glass W, it has been found that there is always a situation where the cover glass W can contact only one of the upper surface slope 72u and the lower surface slope 72d. For this reason, in the corner | angular part of the cover glass W, it turned out that the part which grinding | polishing is not enough in either the upper surface or the lower surface generate | occur | produces.
よって、本発明者は、ヘリカル研磨を行う際、図６における、θ、ｙ、カバーガラスＷの厚みｔの関係は、「カバーガラスＷの上面又は下面のうちどちらか一方のみが研削溝７４の端部（上面斜面７２ｕまたは下面斜面７２ｄ）に接触し、もう一方は端部に接触しない」（条件１）ようにθ、ｙ、ｔが選択されなければならないことを見いだした。よって、それらのパラメータのうち、どれかが決まっているならば、変更可能なパラメータを調整することによって上記条件１を満たさなければならない。その際、条件１を満たす範囲で、なるべく図６におけるｙ0がｙに近い値である方が好ましいことが判明した。それにより、研削溝７４の大部分を使用できるので、砥石の寿命も長くなるからである。 Therefore, when the present inventor performs helical polishing, the relationship between θ, y, and the thickness t of the cover glass W in FIG. 6 is “only one of the upper surface or the lower surface of the cover glass W is the grinding groove 74. It has been found that θ, y, and t must be selected so as to contact one end (upper surface inclined surface 72u or lower surface inclined surface 72d) and the other does not contact the end portion (condition 1). Therefore, if any of these parameters is determined, the above condition 1 must be satisfied by adjusting the changeable parameters. At this time, it was found that it is preferable that y0 in FIG. This is because most of the grinding groove 74 can be used, so that the life of the grindstone is extended.
図８は、円形部の加工と直線部の加工とでカバーガラスＷの厚み方向の上下端部で外周精研削砥石７２と研削溝７４との当接の違いを説明する平面図であり、外周精研削砥石７２の研削溝７４の円筒部と直線ワークＷ１の接触領域は、円筒部と円形ワークＷ２の接触領域より大きいだけでなく、研削溝７４の上下端部の上面斜面７２ｕあるいは下面斜面７２ｄとの直線ワークＷ１の接触域Ｌは円形ワークＷ２の接触域Ｍより大きい。 FIG. 8 is a plan view for explaining the difference in contact between the outer peripheral precision grinding wheel 72 and the grinding groove 74 at the upper and lower ends in the thickness direction of the cover glass W between the processing of the circular portion and the processing of the straight portion. The contact area between the cylindrical portion of the grinding groove 74 of the fine grinding wheel 72 and the linear workpiece W1 is not only larger than the contact area between the cylindrical portion and the circular workpiece W2, but also the upper surface slope 72u or the lower surface slope 72d at the upper and lower ends of the grinding groove 74. The contact area L of the straight workpiece W1 is larger than the contact area M of the circular workpiece W2.
したがって、直線ワークＷ１での研削抵抗は円形ワークＷ２の研削抵抗より大きいだけでなく、研削溝７４の厚み方向の幅を円形ワークＷ２に合わせて面取り加工すると、直線ワークＷ１を面取り加工することができなくなる。また、円形ワークＷ２に対して上下対称に面取り加工ができるように研削溝７４を作成したとしても、それを直線ワークＷ１に対して面取り加工すると上下面の形状が異なったものとなる。 Therefore, not only the grinding resistance of the linear workpiece W1 is larger than the grinding resistance of the circular workpiece W2, but also the chamfering of the linear workpiece W1 can be performed by chamfering the width in the thickness direction of the grinding groove 74 to the circular workpiece W2. become unable. Even if the grinding groove 74 is formed so that the chamfering can be performed symmetrically with respect to the circular workpiece W2, if the chamfering is performed on the straight workpiece W1, the shapes of the upper and lower surfaces are different.
図９は、従来の板材の端面加工に対して平面研削盤８０に１軸を追加した軸傾斜方式によるヘリカル研削の例を示す。図９に示すように、精密ステージ８１を傾斜角度αで配置し、砥石８２の最下点を被加工材８３が通過するようにしたものである。砥石８２は被加工材８３よりも幅広であり、バイス８４によって両面を加工面の近くまで固定されている。 FIG. 9 shows an example of helical grinding by an axis inclination method in which one axis is added to the surface grinder 80 in contrast to the conventional end face processing of a plate material. As shown in FIG. 9, the precision stage 81 is arranged at an inclination angle α so that the workpiece 83 passes through the lowest point of the grindstone 82. The grindstone 82 is wider than the workpiece 83, and both surfaces are fixed to the vicinity of the machining surface by the vise 84.
この方法では、図１０（ａ）に示すように、被加工材８３がバイス８４によって、しっかりと固定されている点、砥石８２の回転軸が加工面と水平となる点等より、砥石８２が矢印Ｖのように押し付けられ、砥石８２の振れ等が被加工材８３へ衝撃となり、加工面にダメージを与える。また、研削によるキリコが加工面に落下することより、加工面にキリコによる傷、引っ掻きによる条痕が生じる。 In this method, as shown in FIG. 10 (a), the grindstone 82 is fixed because the workpiece 83 is firmly fixed by the vise 84, the rotation axis of the grindstone 82 is horizontal with the machining surface, and the like. When pressed as indicated by the arrow V, the wobbling of the grindstone 82 impacts the workpiece 83 and damages the processed surface. Further, since the ground metal falls to the processed surface, scratches and scratches due to the scratch are generated on the processed surface.
これに対して、図６、７に示したように、本発明では、被加工材Ｗに対して外周精研削砥石７２の研削溝７４を角度θ傾けている。また、チャックテーブル７３はカバーガラスＷの平面を載置し、この表面をエアーコンプレッサーやブロワー等で減圧し、カバーガラスＷを吸着し固定する。カバーガラスＷをチャックテーブル７３よりオーバハングして垂直方向に吸着して保持した図１０（ｂ）の場合は、外周精研削砥石７２の研削溝７４が加工面に対して垂直に当接し、外周精研削砥石７２による押し付け力が矢印Ｈのように働く。 On the other hand, as shown in FIGS. 6 and 7, in the present invention, the grinding groove 74 of the outer peripheral grinding wheel 72 is inclined at an angle θ with respect to the workpiece W. The chuck table 73 is mounted with a flat surface of the cover glass W, and the surface of the chuck table 73 is decompressed by an air compressor, a blower or the like, and the cover glass W is adsorbed and fixed. In the case of FIG. 10B in which the cover glass W overhangs from the chuck table 73 and is sucked and held in the vertical direction, the grinding groove 74 of the outer peripheral grinding wheel 72 comes into contact with the processing surface perpendicularly, The pressing force by the grinding wheel 72 works as shown by an arrow H.
したがって、加工時に被加工材、例えばカバーガラスＷ自体がやや弾性変形し、外周精研削砥石７２が柔らかいレジンボンド砥石であることと相まって、その振れ等の衝撃を緩和する。したがって、加工面にキズ等のダメージを与えことがなく、研削によるキリコは矢視のように排出され、加工面に落下することがなく、加工面にキリコによる傷、引っ掻きによる条痕を生じることがない。 Therefore, a workpiece, for example, the cover glass W itself is slightly elastically deformed during processing, and coupled with the fact that the outer peripheral fine grinding stone 72 is a soft resin bond grinding stone, the impact such as runout is reduced. Therefore, there is no damage such as scratches on the machined surface, and the ground metal is discharged as shown by the arrow, and it does not fall on the machined surface, causing scratches and scratches on the machined surface. There is no.
図１１は、以上の面取り加工方法により加工された被加工材の端面を示す側面図であり、レジン砥石である外周精研削砥石７２で研削後の条痕の状態を斜線で示している。研削溝７４は被加工材（基板、ワーク）の厚みに対して幅を十分大きくし、被加工材に対して６〜１０°の斜め角度で当接させ、研削溝７４の上面と下面のうち片面のみワークに当接するようにし、他方には当てないように面取りを行った。実際には、上面を当接させた研削を被加工材の端面の全周に対して１周行い、次に下面を当接させ、さらに１周させて合計２周の研磨、面取りを行った。 FIG. 11 is a side view showing the end face of the workpiece processed by the above-described chamfering method, and the state of the streak after grinding with the outer peripheral grinding wheel 72 which is a resin grindstone is indicated by oblique lines. The grinding groove 74 has a sufficiently large width with respect to the thickness of the workpiece (substrate, workpiece) and is brought into contact with the workpiece at an oblique angle of 6 to 10 °. Chamfering was performed so that only one side was in contact with the work and not the other side. Actually, grinding with the upper surface abutting was performed once for the entire circumference of the end surface of the workpiece, then the lower surface was abutted, and further one round was performed for a total of two rounds of polishing and chamfering. .
従来のヘリカル研削による面取り加工では角部、直線部を有する被加工材で砥石の研削溝の上面と下面のうち片方のみ強く当たる片当たりが発生し良好な面取りが出来なかったが、図に示すように厚み方向の中央部Ｃが砥石を傾斜させた角度に応じたヘリカル研削の特有な条痕となり、良好な面粗さで形状崩れを生じていない。 In conventional chamfering by helical grinding, a workpiece having a corner and a straight part was hit by only one of the upper and lower surfaces of the grinding groove of the grindstone, and good chamfering was not possible. In this way, the central portion C in the thickness direction becomes a characteristic streak of helical grinding according to the angle at which the grindstone is inclined, and the shape is not deformed with good surface roughness.
また、上下両端も角度、大きさ共に対称、図で上部の面取り部Ｔｕ、下部の面取り部Ｔｄの幅も均等であり、研削溝の端部で被加工材の端面の角部がヘリカル研削されたことによる条痕、角度、方向は研削溝の端部が当たっている分だけ異なり、それが明確に現れている。 In addition, both the upper and lower ends are symmetrical in angle and size. In the figure, the width of the upper chamfered portion Tu and the lower chamfered portion Td is uniform, and the corners of the end surface of the workpiece are helically ground at the ends of the grinding grooves. The streak, the angle, and the direction are different as much as the end of the grinding groove hits, and this clearly appears.
さらに、スマートフォンやタブレットの薄型化、軽量化に伴って、従来、ガラス基板を所定の大きさに切断してから、化学強化を行い、その後に、マスキング印刷を行い、センサー電極を形成していた。化学強化とは、ガラス表面の化学的な処理による強化全般であり、一般的な方法として、ガラス中のアルカリイオンを他のより分子サイズの大きいアルカリイオンに入れ替える方法である。このイオン交換法はイオン交換によりガラス表面に圧縮応力を発生させ、脆性材料の脆く、割れ易い短所を解消するために行う。 Furthermore, along with the thinning and weight reduction of smartphones and tablets, conventionally, the glass substrate was cut into a predetermined size and then chemically strengthened, followed by masking printing to form sensor electrodes. . Chemical strengthening is general strengthening by chemical treatment of the glass surface. As a general method, the alkali ions in the glass are replaced with other alkali ions having a larger molecular size. This ion exchange method is performed to generate a compressive stress on the glass surface by ion exchange, and to eliminate the disadvantages of brittle materials that are brittle and easy to break.
それに対して、上記の面取り加工によれば、大きなガラス基板のまま化学強化処理を施した後、マスキング印刷、センサー電極を形成し、その後に、切断、面取り加工を行っても、つまり、端面に化学強化されていない状態でも良好な加工面粗さが得られ、マイクロクラックの発生を抑えることができる。そして、その結果、１枚のカバーガラスにタッチセンサを一体化させた２層構造のＯＧＳ（Ｏｎｅ Ｇｌａｓｓ Ｓｏｌｕｔｉｏｎ）静電容量式タッチパネルの作製等において、生産効率が極めて向上し、実用上で十分な端面強度を得ることができる。 On the other hand, according to the above chamfering process, even after performing chemical strengthening treatment with a large glass substrate, masking printing, forming a sensor electrode, and then performing cutting and chamfering, that is, on the end face Even when not chemically strengthened, good surface roughness can be obtained, and the occurrence of microcracks can be suppressed. As a result, in the production of a two-layer OGS (One Glass Solution) capacitive touch panel in which a touch sensor is integrated with a single cover glass, production efficiency is extremely improved, which is practically sufficient. End face strength can be obtained.
さらに、図１４は、２層構造の静電容量式タッチパネルを備えた液晶表示装置の基本構造を示す断面図であり、カバーガラスＷの下にタッチセンサ１０２のセンサー電極が形成され、液晶ディスプレイ１０４の上に貼り合わされ、液晶パネルの中にタッチセンサ１０２を組み込んだ構造、いわゆるインセル型の液晶表示装置とされている。 Further, FIG. 14 is a cross-sectional view showing a basic structure of a liquid crystal display device provided with a capacitive touch panel having a two-layer structure. A sensor electrode of the touch sensor 102 is formed under the cover glass W, and the liquid crystal display 104 The touch sensor 102 is incorporated in a liquid crystal panel, that is, a so-called in-cell type liquid crystal display device.
さらに、面粗さ、形状の対称性のみならず、研削溝を１回修正（ツールイング）した後、研削能力の低下、所定の外周面幅、外周角度、外周形状を満たさなくなるまでの連続して加工できる枚数も増加できる。さらに、レジン砥石である外周精研削砥石７２のツールイングを繰り返し、面取り加工を連続した場合、摩耗によりレジン砥石が所定の直径以下となって、使用不可能となるまでに加工できる枚数も多くすることができる。 Furthermore, not only the surface roughness and shape symmetry, but also after the grinding groove is corrected once (tooling), it continues until the grinding ability decreases, the predetermined outer peripheral surface width, outer peripheral angle, and outer peripheral shape are not satisfied. The number of sheets that can be processed can be increased. Further, when the chamfering process is repeated by repeating the tooling of the outer peripheral grinding wheel 72 which is a resin grindstone, the number of sheets that can be machined before the resin grindstone becomes smaller than a predetermined diameter due to wear and becomes unusable is increased. be able to.
以上、図６、７では、外周精研削砥石７２を用いたヘリカル研削として説明したが、粗研削時、つまり、外周粗研削砥石６９を用いるときも同様に２周するヘリカル研削を行っても良い。これによれば、精研削時、外周精研削砥石７２の研削溝７４の摩耗、目詰まり、溝形状の変形を防いで、より良好な面取り加工を行うことができる。 As described above, in FIGS. 6 and 7, the helical grinding using the outer peripheral fine grinding wheel 72 has been described. However, during the rough grinding, that is, when the outer peripheral coarse grinding wheel 69 is used, the helical grinding that makes two rounds may be performed similarly. . According to this, at the time of fine grinding, it is possible to prevent wear and clogging of the grinding groove 74 of the outer peripheral precision grinding wheel 72 and to prevent deformation of the groove shape, and to perform better chamfering.
また、被加工材の端面の上部を全周に渡って研削溝７４で１周するように研削（上部の研削）し、その後、研削砥石６９あるいは７２を被加工材の厚さ方向に相対的に上昇させて、さらに下部を１周研削（下部の研削）することとしたが、この順序は逆でも良いし、被加工材の端面の上部、下部に研削溝７４の端部である上面斜面７２ｕ、下面斜面７２ｄのいずれも当てない中央部の研削を別途に行っても良い。 Further, the upper part of the end surface of the workpiece is ground so as to make one round with the grinding groove 74 over the entire circumference (upper grinding), and then the grinding wheel 69 or 72 is relatively relative to the thickness direction of the workpiece. In this case, the lower part is ground once (lower part grinding), but this order may be reversed, and the upper surface slope which is the end part of the grinding groove 74 at the upper part and the lower part of the end face of the workpiece. You may grind separately the center part which neither 72u nor the lower surface inclined surface 72d touches.
図１２は、中央部の研削（ａ）、上部の研削（ｂ）、下部の研削（ｃ）を示している。中央部の研削（ａ）は、外周精研スピンドル７１に向かってチャックテーブル７３が送られたとき、研削溝７４の右上端部の上面斜面７２ｕ及び左下端部の下面斜面７２ｄがいずれもカバーガラスＷの上面及び下面に当接しないで加工が開始され、その後、チャックテーブル７３に保持されたカバーガラスＷがＹ軸方向に一定速度で移動して面取りが行われる。研削溝７４が、カバーガラスＷの見掛け厚み、外周精研削砥石７２の研削溝７４を角度θ傾けたとき、研削溝７４の直径をＤ、カバーガラスＷの厚さｔとの双方を考慮した厚みよりも十分、少なくとも２０〜３０％幅広となっている。 FIG. 12 shows center grinding (a), upper grinding (b), and lower grinding (c). In the central grinding (a), when the chuck table 73 is fed toward the outer peripheral precision spindle 71, the upper surface slope 72u at the upper right end portion and the lower surface slope 72d at the lower left end portion of the grinding groove 74 are both cover glass. Machining is started without contacting the upper and lower surfaces of W, and then the cover glass W held on the chuck table 73 is moved at a constant speed in the Y-axis direction to perform chamfering. When the grinding groove 74 has an apparent thickness of the cover glass W, and when the grinding groove 74 of the outer peripheral grinding wheel 72 is tilted at an angle θ, the thickness of the grinding groove 74 is considered in consideration of both the diameter D and the thickness t of the cover glass W. More than at least 20-30% wider.
カバーガラスＷの厚み方向の中央部、主要部は外周精研削砥石７２の研削溝７４の円周部が当接してヘリカル研削される。加工点が角のＲ部に到達すると、チャックテーブル７３を回転させて、角部のＲを加工する。カバーガラスＷの厚み方向の端部を研削溝７４の上下斜面（あるいは上下端部）で研削しないので、上下非対称性に影響なく、カバーガラスＷの外周形状に係わらず加工することに適し、図２に示したような円形部が主体でＯＦ部のような直線部がある場合に、形状を削り出すのには都合が良い。 The central part and the main part of the cover glass W in the thickness direction are helically ground by contacting the circumferential part of the grinding groove 74 of the outer peripheral fine grinding stone 72. When the processing point reaches the corner R, the chuck table 73 is rotated to process the corner R. Since the end portion in the thickness direction of the cover glass W is not ground by the upper and lower slopes (or upper and lower end portions) of the grinding groove 74, it is suitable for processing regardless of the outer peripheral shape of the cover glass W without affecting the vertical asymmetry. It is convenient to cut out the shape when the circular part as shown in 2 is the main part and there is a straight part such as the OF part.
図１２（ｂ）は上部の研削を示し、図１２（ａ）の状態から外周精研削砥石７２をＺ軸方向に下降、あるいはチャックテーブル７３をＺ軸方向に上昇させ、研削溝７４の右上端部の上面斜面７２ｕにカバーガラスＷの上面、図で右上端部を当接させる。つまり、研削砥石を被加工材に対して相対的に厚さ方向に下降させる。その後、チャックテーブル７３に保持されたカバーガラスＷをＹ軸方向に一定速度で移動してヘリカル研削による面取り加工が行われる。 FIG. 12B shows the upper grinding. From the state of FIG. 12A, the outer peripheral grinding wheel 72 is lowered in the Z-axis direction or the chuck table 73 is raised in the Z-axis direction, and the upper right end of the grinding groove 74 is shown. The upper surface of the cover glass W, the upper right end in the figure, is brought into contact with the upper surface slope 72u of the portion. That is, the grinding wheel is lowered relative to the workpiece in the thickness direction. Thereafter, the cover glass W held on the chuck table 73 is moved at a constant speed in the Y-axis direction, and chamfering is performed by helical grinding.
図１２（ｃ）は下部の研削を示し、図１２（ｂ）の状態から外周精研削砥石７２をＺ軸方向に上昇、あるいはチャックテーブル７３をＺ軸方向に下降させ、研削溝７４の下面斜面がカバーガラスＷの下面、図で左下端部の下面斜面７２ｄに当接するようにする。つまり、研削砥石を被加工材に対して相対的に厚さ方向に上昇させる。その後、チャックテーブル７３に保持されたカバーガラスＷがＹ軸方向に一定速度で移動して図１２（ａ）、図１２（ｂ）に続いて３周目の面取りを行う。 FIG. 12C shows the grinding of the lower part. From the state of FIG. 12B, the outer peripheral grinding wheel 72 is raised in the Z-axis direction or the chuck table 73 is lowered in the Z-axis direction, and the lower surface slope of the grinding groove 74 Is in contact with the lower surface of the cover glass W, that is, the lower surface slope 72d of the lower left end in the figure. That is, the grinding wheel is raised relative to the workpiece in the thickness direction. Thereafter, the cover glass W held on the chuck table 73 moves at a constant speed in the Y-axis direction, and chamfering on the third round is performed following FIGS. 12A and 12B.
図１２は、中央部の研削（ａ）、上部の研削（ｂ）、下部の研削（ｃ）の順で説明したが、これに限ることなく、上部の研削（ｂ）、中央部の研削（ａ）、下部の研削（ｃ）の順など任意でも良い。ただし、中央部の研削（ａ）を先に行うことが、先に形状を削り出すことができる点、その後、より慎重、正確に上部の研削（ｂ）、下部の研削（ｃ）を行える点で優れている。 Although FIG. 12 demonstrated center part grinding (a), upper part grinding (b), and lower part grinding (c) in this order, it is not restricted to this, Upper part grinding (b), Central part grinding ( The order of a) and lower grinding (c) may be arbitrary. However, the point that grinding (a) at the center portion can be performed first, the shape can be cut out first, and then the upper portion grinding (b) and the lower portion grinding (c) can be performed more carefully and accurately. Is excellent.
また、被加工材として、特に、図２に示したような円形部が主体でＯＦ部のような直線部がある場合に、中央部の研削（ａ）、上部の研削（ｂ）、下部の研削（ｃ）をそれぞれ、被加工材の外周を１周する必要はない。例えば、円形部は上部の研削（ｂ）、下部の研削（ｃ）だけを行い、直線部は中央部の研削（ａ）、上部の研削（ｂ）、下部の研削（ｃ）をそれぞれ行えば良く、面粗さを良好にし、形状崩れを生じないで加工時間を短縮、研削溝７４の摩耗、目詰まり、溝形状の変形を防ぐことができる。 Further, as the work material, particularly when the circular portion as shown in FIG. 2 is mainly used and there is a straight portion such as the OF portion, the grinding of the central portion (a), the grinding of the upper portion (b), Each grinding (c) does not require one round of the outer periphery of the workpiece. For example, if the circular portion is subjected only to the upper grinding (b) and the lower grinding (c), the straight portion is subjected to the central grinding (a), the upper grinding (b), and the lower grinding (c). The surface roughness is good, the processing time is shortened without causing the shape collapse, and the grinding groove 74 can be prevented from being worn, clogged and deformed.
図６、７及び図１２では、被加工材の厚さ方向に上昇、又は下降を説明したが、図１３は、外周精研削砥石７２の研削溝７４の上面斜面７２ｕ及び下面斜面７２ｄとの関係の詳細であり、研削溝７４の斜面と面取り角度の関係を説明する。図１３（ａ）は外周精研削砥石７２を傾けないで、被加工材Ｗへ当接させた状態であり、面取り角度が研削溝７４の上面斜面７２ｕ及び下面斜面７２ｄの角度と一致している。 6, 7, and 12 describe the rising or lowering in the thickness direction of the workpiece, but FIG. 13 illustrates the relationship between the upper surface inclined surface 72 u and the lower surface inclined surface 72 d of the grinding groove 74 of the outer peripheral grinding wheel 72. The relationship between the slope of the grinding groove 74 and the chamfer angle will be described. FIG. 13A shows a state in which the peripheral grinding wheel 72 is not tilted but is in contact with the workpiece W, and the chamfering angles coincide with the angles of the upper and lower slopes 72u and 72d of the grinding groove 74. FIG. .
ヘリカル研削を行うため、外周精研削砥石７２を傾けた状態が図１３（ｂ）であり、３〜１５°、望ましくは６〜１０°であるので、加工がわずかに開始されれば、上面斜面７２ｕと被加工材Ｗの上面との接触領域は図１３（ａ）と大きな違いはない。したがって、図１１で既に示したように、被加工材Ｗの上部及び下部となる上下両端（Ｔｕ、Ｔｄの領域）も中央部Ｃと比べて条痕が斜面の分、異なる向きの条痕となり、ヘリカル研削の効果が十分に得られ、中央部と遜色なく加工歪み、表面粗さが改善される。この三つの条痕が現れること、上部及び下部は端面の厚さ方向の中心線に対して対称に形成されることが、以上の実施の形態の特徴でもある。 In order to perform helical grinding, the state in which the outer peripheral grinding wheel 72 is tilted is shown in FIG. 13B, which is 3 to 15 °, preferably 6 to 10 °. The contact area between 72u and the upper surface of the workpiece W is not significantly different from FIG. Therefore, as already shown in FIG. 11, the upper and lower ends (Tu and Td regions) which are the upper and lower parts of the workpiece W are also inclined in different directions as compared to the central part C. The effect of helical grinding is sufficiently obtained, and the processing distortion and surface roughness are improved in the same manner as the central part. It is also a feature of the above embodiment that the three streaks appear and that the upper and lower portions are formed symmetrically with respect to the center line in the thickness direction of the end face.
なお、説明を分かりやすくするため、図１３（ａ）の外周精研削砥石７２を傾けないことで、研削溝７４の斜面を面取り角度と一致させたことを基準として、外周精研削砥石７２を傾けたことを図１３（ｂ）とした。それに対して、逆に、外周精研削砥石７２を傾けた図１３（ｂ）で斜面を被加工材Ｗの面取り角度と一致させても良い。これにより、加工の開始時点、研削量が少ない場合でも、上面斜面７２ｕと被加工材Ｗの上面との接触領域が増えて、被加工材Ｗの上下両端の表面粗さが改善される。 In order to make the explanation easy to understand, by not tilting the peripheral grinding wheel 72 of FIG. 13A, the peripheral grinding wheel 72 is tilted with reference to the fact that the slope of the grinding groove 74 coincides with the chamfering angle. This is shown in FIG. On the contrary, the inclined surface may be matched with the chamfering angle of the workpiece W in FIG. Thereby, even when the amount of grinding is small at the start of processing, the contact area between the upper surface slope 72u and the upper surface of the workpiece W is increased, and the surface roughness of the upper and lower ends of the workpiece W is improved.
１０…加工部、２０…供給回収部、３０…ウエーハカセット、３１…カセットテーブル、４０…供給回収ロボット、５０…搬送アーム、６０…ウエーハ送り装置、６１…外周精研削装置、６２…外周粗研削装置、６５…チャックテーブル駆動モータ、６６…チャックテーブル、６７…外周粗研モータ、６８…外周粗研スピンドル（回転軸）、６９…外周粗研削砥石、７０…外周精研モータ、７１外…周精研スピンドル（回転軸）、７２…外周精研削砥石、７２ｄ…下面斜面、７２ｕ…上面斜面、７３…チャックテーブル、７４…研削溝、８０…平面研削盤、８１…精密ステージ、８２…砥石、８３…被加工材、８４…バイス、１０２…タッチセンサ、１０４…液晶ディスプレイ、Ｗ…ウエーハ、カバーガラス、被加工材、ｙ0…被加工材の見掛け厚み DESCRIPTION OF SYMBOLS 10 ... Processing part, 20 ... Supply / recovery part, 30 ... Wafer cassette, 31 ... Cassette table, 40 ... Supply / recovery robot, 50 ... Transfer arm, 60 ... Wafer feeder, 61 ... Fine outer peripheral grinding device, 62 ... Coarse peripheral grinding 65, chuck table drive motor, 66 ... chuck table, 67 ... outer periphery roughing motor, 68 ... outer periphery roughing spindle (rotating shaft), 69 ... outer periphery roughing grinding wheel, 70 ... outer periphery fine grinding motor, 71 outside ... Spindle (rotating shaft), 72 ... outer peripheral fine grinding wheel, 72d ... lower surface slope, 72u ... upper surface slope, 73 ... chuck table, 74 ... grinding groove, 80 ... surface grinder, 81 ... precision stage, 82 ... grinding wheel, 83 ... Work material, 84 ... Vise, 102 ... Touch sensor, 104 ... Liquid crystal display, W ... Wafer, cover glass, work material, y0 ... Appearance of work material Thickness
Claims (8)
矩形状の基板を該基板と同様の形状のチャックテーブルに保持し、
前記チャックテーブルの大きさは、前記基板のＸ軸方向の中央からの距離をＱとし、前記チャックテーブルのＸ軸方向の中央からの距離をＰとすると、Ｑは、Ｐの１．３〜１．７倍となり、前記基板のＹ軸方向の中央からの距離をＮとし、前記チャックテーブルのＹ軸方向の中央からの距離をＨとすると、Ｎは、Ｈの１．３〜１．７倍であり、
前記チャックテーブルに前記基板を保持したまま、前記基板の全周に渡って、前記端面の厚さ方向の中央部を３〜１５°でヘリカル研削し、前記端面の上部及び下部を面取り角度でヘリカル研削することを特徴とする面取り加工された基板の製造方法。 A method for manufacturing a substrate, wherein the planar shape is rectangular, and the end face is chamfered with a grinding groove formed on a grinding wheel,
Hold a rectangular substrate on a chuck table of the same shape as the substrate,
As for the size of the chuck table, Q is the distance from the center in the X-axis direction of the substrate, and P is the distance from the center in the X-axis direction of the chuck table. .Times.7, where N is the distance from the center in the Y-axis direction of the substrate and H is the distance from the center in the Y-axis direction of the chuck table, N is 1.3 to 1.7 times H. And
While holding the substrate on the chuck table, the central portion in the thickness direction of the end surface is helically ground at 3 to 15 ° over the entire circumference of the substrate, and the upper and lower portions of the end surface are helically chamfered at a chamfer angle. A method for producing a chamfered substrate, characterized by grinding.
大きな基板のまま化学強化処理を施した後、所定の形状に切断し、前記ヘリカル研削を行うことを特徴とする面取り加工された基板の製造方法。 In the manufacturing method of the chamfered board | substrate of Claim 1,
A method for producing a chamfered substrate, comprising subjecting a large substrate to chemical strengthening treatment, cutting into a predetermined shape, and performing the helical grinding.
前記端面の上部を前記研削溝の上面斜面で研削し、その後、前記基板を前記研削砥石に対して相対的に前記厚さ方向に下降させて再び研削、
あるいは、前記端面の下部を前記研削溝の下面斜面で研削し、その後、前記基板を前記研削砥石に対して相対的に前記厚さ方向に上昇させて再び研削することを特徴とする面取り加工された基板の製造方法。 In the manufacturing method of the chamfered board | substrate of Claim 1 or 2,
Grinding the upper part of the end surface with the upper surface slope of the grinding groove, and then lowering the substrate in the thickness direction relative to the grinding wheel and grinding again;
Alternatively, the lower end of the end face is ground by the lower slope of the grinding groove, and then the substrate is raised relative to the grinding wheel in the thickness direction and then ground again. A manufacturing method of a substrate.
前記端面の上部あるいは下部を全周に渡って前記研削溝で１周するように研削し、その後、前記基板を前記研削砥石に対して相対的に前記厚さ方向に下降あるいは上昇させて、さらに１周研削することを特徴とする面取り加工された基板の製造方法。 In the manufacturing method of the chamfered board | substrate of any one of Claim 1 to 3,
Grinding the upper or lower portion of the end face to make one round with the grinding groove over the entire circumference, and then lowering or raising the substrate relative to the grinding wheel in the thickness direction; A method for producing a chamfered substrate, characterized by grinding one round.
前記端面の加工は、それぞれ前記端面の上部の研削、中央部の研削、下部の研削とで行うことを特徴とする面取り加工された基板の製造方法。 In the manufacturing method of the chamfered board | substrate of any one of Claim 1 to 4,
The method of manufacturing a chamfered substrate, wherein the processing of the end face is performed by grinding the upper part of the end face, grinding the central part, and grinding the lower part, respectively.
前記上部の研削、中央部の研削、下部の研削は、それぞれ前記端面を全周に渡って前記研削溝で１周するように行うことを特徴とする面取り加工された基板の製造方法。 The method for manufacturing a chamfered substrate according to claim 5,
The method for producing a chamfered substrate, wherein the upper grinding, the central grinding, and the lower grinding are performed so that the end face makes one round with the grinding groove over the entire circumference.
前記基板は、その平面にマスキング印刷、センサー電極の形成を行うことを特徴とする面取り加工された基板の製造方法。 In the manufacturing method of the chamfered board | substrate of any one of Claim 1 to 6,
A method of manufacturing a chamfered substrate, wherein the substrate is subjected to masking printing and formation of a sensor electrode on the plane.
矩形状のカバーガラスを該カバーガラスと同様の形状のチャックテーブルに保持し、
前記チャックテーブルの大きさは、前記カバーガラスのＸ軸方向の中央からの距離をＱとし、前記チャックテーブルのＸ軸方向の中央からの距離をＰとすると、Ｑは、Ｐの１．３〜１．７倍となり、前記カバーガラスのＹ軸方向の中央からの距離をＮとし、前記チャックテーブルのＹ軸方向の中央からの距離をＨとすると、Ｎは、Ｈの１．３〜１．７倍であり、
前記チャックテーブルに前記カバーガラスを保持したまま、前記カバーガラスを全周に渡って、前記端面の厚さ方向の中央部が３〜１５°でヘリカル研削し、上部及び下部を面取り角度でヘリカル研削することを特徴とする液晶表示装置の製造方法。 A method for manufacturing a liquid crystal display device in which a planar shape is rectangular, a cover glass chamfered with a grinding groove formed in a grinding wheel on an end surface, and a touch sensor is incorporated in a liquid crystal panel,
Hold the rectangular cover glass on the chuck table of the same shape as the cover glass,
The size of the chuck table is such that Q is the distance from the center of the cover glass in the X-axis direction and P is the distance from the center of the chuck table in the X-axis direction. When the distance from the center of the cover glass in the Y-axis direction is N and the distance from the center of the chuck table in the Y-axis direction is H, N is 1.3 to 1. 7 times,
While the cover glass is held on the chuck table, the cover glass is helically ground at a central portion of the end surface in the thickness direction of 3 to 15 °, and the upper and lower portions are helically ground at a chamfer angle. A method for manufacturing a liquid crystal display device.
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