JP6605061B2 - 載置台構造及び処理装置 - Google Patents
載置台構造及び処理装置 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Description
本発明の第1の実施形態に係る載置台構造を備える処理装置について説明する。図1は、本発明の第1の実施形態に係る処理装置の一例を示す概略断面図である。
本発明の第2の実施形態に係る載置台構造を備える処理装置について説明する。第2の実施形態では、第1の実施形態の載置台構造50の貫通孔56aに代えて第3冷却ガス供給部76が形成されている。以下、第1の実施形態と異なる点を中心に説明する。図3は、本発明の第2の実施形態に係る処理装置の一例を示す概略断面図である。
本発明の第3の実施形態に係る載置台構造を備える処理装置について説明する。第3の実施形態では、第1の実施形態の載置台構造50に対して更に第1摺動用シール部材78及び第2摺動用シール部材80が設けられている。但し、第1摺動用シール部材78又は第2摺動用シール部材80のいずれか一方のみが設けられていてもよい。以下、第1の実施形態と異なる点を中心に説明する。図4は、第3の実施形態に係る処理装置の一例を示す概略断面図である。
10 真空容器
30 ターゲット
50 載置台構造
52 冷凍機
54 冷凍伝熱体
54a 第1冷却ガス供給部
54c 凹部
56 載置台
56a 貫通孔
56b チャック電極
56c 凸部
58 外筒
58a 円筒部
58b フランジ部
60 断熱部材
62 磁性流体シール部
62a 回転部
62b 内側固定部
62c 外側固定部
62d 加熱手段
64 ベローズ
66 スリップリング
66a 回転体
66b 固定体
68 駆動機構
68a ロータ
68b ステータ
70 断熱体
72 第2冷却ガス供給部
74 昇降機構
76 第3冷却ガス供給部
76a 磁性流体シール部
76b カバー
78 第1摺動用シール部材
80 第2摺動用シール部材
C 中心軸
L 配線
G 隙間
S 空間
W 半導体ウエハ
Claims (14)
- 冷凍伝熱体と、
前記冷凍伝熱体を保持し、前記冷凍伝熱体を冷却する冷凍機と、
前記冷凍伝熱体の周囲に配置され、回転可能な外筒と、
前記外筒に接続され、前記冷凍伝熱体の上面に対して隙間を有して配置された載置台と、
を有し、
前記載置台は、前記冷凍伝熱体の側に向かって突出する凸部を有し、
前記冷凍伝熱体は、前記凸部と対向する面に前記凸部に対して隙間を有して嵌合する凹部を有し、
前記凸部の外面及び前記凹部の内面の少なくともいずれかには、凹凸加工が施されており、
前記冷凍伝熱体は、前記隙間と連通し、前記隙間に第1冷却ガスを供給する第1冷却ガス供給部を有し、
前記冷凍伝熱体と前記外筒との間の空間に第2冷却ガスを供給する第2冷却ガス供給部を有する、
載置台構造。 - 前記凸部及び前記凹部は、前記載置台の中心軸を取り囲む略円環形状を有する、
請求項1に記載の載置台構造。 - 前記凸部及び前記凹部は、それぞれ複数形成されている、
請求項1又は請求項2に記載の載置台構造。 - 前記冷凍機は、前記冷凍伝熱体の上面を−30℃以下に冷却する、
請求項1から請求項3の何れか一項に記載の載置台構造。 - 前記冷凍機及び前記冷凍伝熱体の周囲に設けられ、真空断熱二重構造に形成された断熱体を有する、
請求項1から請求項4の何れか一項に記載の載置台構造。 - 前記載置台は、上下に貫通する貫通孔を有し、
前記貫通孔は、前記隙間を介して前記第1冷却ガス供給部に連通する、
請求項1から請求項5の何れか一項に記載の載置台構造。 - 前記第2冷却ガスの熱伝導率は、前記第1冷却ガスの熱伝導率よりも低い、
請求項1から請求項6の何れか一項に記載の載置台構造。 - 前記第2冷却ガスの供給圧力は、前記第1冷却ガスの供給圧力と同一、又は前記第1冷却ガスの供給圧力より高い、
請求項7に記載の載置台構造。 - 前記載置台の上面に第3冷却ガスを供給する第3冷却ガス供給部を有する、
請求項1から請求項5の何れか一項に記載の載置台構造。 - 前記冷凍伝熱体と前記外筒との間の空間に設けられ、前記第1冷却ガスが前記空間を介して漏れ出すことを防止する摺動用シール部材を有する、
請求項1から請求項8の何れか一項に記載の載置台構造。 - 前記載置台は、静電チャックを有し、
前記静電チャックに電力を供給する配線は、スリップリングを介して前記配線に電力を供給する電源と電気的に接続されている、
請求項1から請求項10の何れか一項に記載の載置台構造。 - 前記外筒は、磁性流体シール部を介して回転可能に支持されており、
前記磁性流体シール部は、加熱手段を含む、
請求項1から請求項11の何れか一項に記載の載置台構造。 - 請求項1から請求項12の何れか一項に記載の載置台構造と、
前記載置台の上方に配置されたターゲットと、
を備える、
処理装置。 - 前記載置台構造の全体を昇降させる昇降機構を備える、
請求項13に記載の処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2018/023967 WO2019009118A1 (ja) | 2017-07-07 | 2018-06-25 | 載置台構造及び処理装置 |
US16/624,492 US20200381272A1 (en) | 2017-07-07 | 2018-06-25 | Placing table structure and treatment device |
KR1020197038252A KR102632158B1 (ko) | 2017-07-07 | 2018-06-25 | 거치대 구조 및 처리 장치 |
TW107123043A TWI759503B (zh) | 2017-07-07 | 2018-07-04 | 載置台構造及處理裝置 |
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JP2017133991 | 2017-07-07 | ||
JP2017133991 | 2017-07-07 |
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JP2019186559A Division JP6771632B2 (ja) | 2017-07-07 | 2019-10-10 | 載置台構造 |
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JP2019016771A JP2019016771A (ja) | 2019-01-31 |
JP2019016771A5 JP2019016771A5 (ja) | 2019-09-12 |
JP6605061B2 true JP6605061B2 (ja) | 2019-11-13 |
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JP2019186559A Active JP6771632B2 (ja) | 2017-07-07 | 2019-10-10 | 載置台構造 |
JP2020162008A Pending JP2021022736A (ja) | 2017-07-07 | 2020-09-28 | 処理装置 |
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JP2020162008A Pending JP2021022736A (ja) | 2017-07-07 | 2020-09-28 | 処理装置 |
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US (1) | US20200381272A1 (ja) |
JP (3) | JP6605061B2 (ja) |
KR (1) | KR102632158B1 (ja) |
TW (1) | TWI759503B (ja) |
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JP7154160B2 (ja) | 2019-03-18 | 2022-10-17 | 東京エレクトロン株式会社 | 温度測定機構、温度測定方法、およびステージ装置 |
JP7285693B2 (ja) | 2019-05-23 | 2023-06-02 | 東京エレクトロン株式会社 | ステージ装置および処理装置 |
JP7365825B2 (ja) | 2019-08-29 | 2023-10-20 | 東京エレクトロン株式会社 | 基板を処理する方法および装置 |
JP7426842B2 (ja) * | 2020-02-12 | 2024-02-02 | 東京エレクトロン株式会社 | ステージ装置、給電機構、および処理装置 |
JP7442347B2 (ja) | 2020-03-06 | 2024-03-04 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP7365944B2 (ja) | 2020-03-11 | 2023-10-20 | 東京エレクトロン株式会社 | 温度センサと温度測定装置及び温度測定方法 |
JP7374026B2 (ja) * | 2020-03-11 | 2023-11-06 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理装置の製造方法 |
CN113832450A (zh) * | 2020-06-24 | 2021-12-24 | 拓荆科技股份有限公司 | 用于晶圆自动升降旋转的方法及设备 |
JP2022050211A (ja) * | 2020-09-17 | 2022-03-30 | 東京エレクトロン株式会社 | 回転機構および基板処理装置 |
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JP4037493B2 (ja) * | 1997-10-28 | 2008-01-23 | 芝浦メカトロニクス株式会社 | 基板冷却手段を備えた成膜装置 |
JP2000251828A (ja) * | 1999-02-25 | 2000-09-14 | Tadamoto Tamai | 基板保持装置 |
JP2002339064A (ja) * | 2001-05-16 | 2002-11-27 | Anelva Corp | 真空処理装置 |
JP2004311592A (ja) * | 2003-04-03 | 2004-11-04 | Renesas Technology Corp | 基板洗浄装置および電子デバイスの製造方法 |
US8307665B2 (en) * | 2006-04-06 | 2012-11-13 | National Institute Of Advanced Industrial Science And Technology | Sample cooling apparatus |
JP4558755B2 (ja) * | 2007-03-20 | 2010-10-06 | 財団法人高知県産業振興センター | プラズマcvd装置 |
US8241425B2 (en) * | 2009-01-23 | 2012-08-14 | Axcelis Technologies, Inc. | Non-condensing thermos chuck |
CN102379035A (zh) * | 2009-03-30 | 2012-03-14 | 东京毅力科创株式会社 | 被处理体的冷却方法和被处理体处理装置 |
JP4886876B2 (ja) * | 2010-05-31 | 2012-02-29 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
JP2012140672A (ja) * | 2010-12-28 | 2012-07-26 | Canon Anelva Corp | スパッタリング装置 |
JP5851131B2 (ja) * | 2011-06-30 | 2016-02-03 | 株式会社アルバック | 静電チャック、真空処理装置 |
JP6173936B2 (ja) * | 2013-02-28 | 2017-08-02 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
US9853579B2 (en) * | 2013-12-18 | 2017-12-26 | Applied Materials, Inc. | Rotatable heated electrostatic chuck |
JP6358856B2 (ja) | 2014-05-29 | 2018-07-18 | 東京エレクトロン株式会社 | 静電吸着装置及び冷却処理装置 |
JP2016053202A (ja) * | 2014-09-04 | 2016-04-14 | 東京エレクトロン株式会社 | 処理装置 |
CN109314078B (zh) * | 2016-06-23 | 2023-02-24 | 株式会社爱发科 | 保持装置 |
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JP2019016771A (ja) | 2019-01-31 |
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