JP6577374B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6577374B2 JP6577374B2 JP2016007556A JP2016007556A JP6577374B2 JP 6577374 B2 JP6577374 B2 JP 6577374B2 JP 2016007556 A JP2016007556 A JP 2016007556A JP 2016007556 A JP2016007556 A JP 2016007556A JP 6577374 B2 JP6577374 B2 JP 6577374B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- shield member
- semiconductor element
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 137
- 239000011347 resin Substances 0.000 claims description 47
- 229920005989 resin Polymers 0.000 claims description 47
- 230000035699 permeability Effects 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000000696 magnetic material Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 description 17
- 230000000694 effects Effects 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
本発明の実施形態を説明する前に、本発明の前提となる技術を説明する。図9は、前提技術における半導体装置50の断面図である。前提技術における半導体装置50は、電力用半導体素子7を含む複数の半導体素子と、リードフレーム2と、樹脂1とを備える。電力用半導体素子7とは、例えばスイッチング素子としてのIGBT(Insulated Gate Bipolar Transistor)、MOSFET(Metal−Oxide−Semiconductor Field−Effect Transistor)、あるいは還流ダイオード(Free Wheeling Diode)等である。半導体装置50は、電力用半導体素子7の他に、電力用半導体素子7を駆動するための駆動回路(図示せず)等を備えてもよい。
図1は、本実施の形態1における半導体装置100の断面図である。また、図2は、半導体装置100の平面図である。図2において、図の見易さのために電力用半導体素子7とシールド部材9のみを描いている。また、図1は、図2中の線分A−Bにおける断面図である。
本実施の形態1における半導体装置100は、電力用半導体素子7を含む複数の半導体素子と、複数の半導体素子が一方主面に搭載されたリードフレーム2と、複数の半導体素子とリードフレーム2の複数の半導体素子を搭載した部分とを封止する樹脂1と、リードフレーム2の一方主面側において複数の半導体素子の上方に配置された少なくとも1つのシールド部材9と、を備え、シールド部材9は、樹脂1に保持され、シールド部材9は、樹脂1よりも透磁率又は導電率が高い。
図3は、本実施の形態2における半導体装置200の平面図である。図3において、図の見易さのために電力用半導体素子7とシールド部材9のみを描いている。
本実施の形態2における半導体装置200において、シールド部材9には少なくとも1つの貫通孔9aが設けられる。
図4は、本実施の形態3における半導体装置300の平面図である。図4において、図の見易さのために電力用半導体素子7とシールド部材9のみを描いている。
本実施の形態3における半導体装置300において、シールド部材9に設けられる少なくとも1つの貫通孔9aは複数である。
図5は、本実施の形態4における半導体装置400の平面図である。図5において、図の見易さのために電力用半導体素子7とシールド部材9のみを描いている。
本実施の形態4における半導体装置400において、シールド部材9に設けられる少なくとも1つの貫通孔9aは、電力用半導体素子7と平面視で重ならない位置に設けられる。
図6は、本実施の形態5における半導体装置500の断面図である。本実施の形態5において、シールド部材9の表面には凹凸が設けられている。凹凸とは、平らなシールド部材9の表面に形成された突起である。
本実施の形態5における半導体装置500において、シールド部材9の表面には凹凸が設けられる。
図7は、本実施の形態6における半導体装置600の断面図である。本実施の形態6において、複数のシールド部材9が設けられている。本実施の形態6では、2枚のシールド部材9が平面視で重なるように配置される。2枚のシールド部材9は共に樹脂1に保持されている。
本実施の形態5における半導体装置600において、少なくとも1つのシールド部材9は複数であり、複数のシールド部材9は平面視で重ねて配置される。
図8は、本実施の形態7における半導体装置700の断面図である。本実施の形態7における半導体装置700は、前提技術における半導体装置50に対してシールド樹脂14をさらに備える。その他の構成は前提技術(図9)と同じため、説明を省略する。
本実施の形態7における半導体装置700は、電力用半導体素子7を含む複数の半導体素子と、複数の半導体素子が一方主面に搭載されたリードフレーム2と、複数の半導体素子とリードフレーム2の複数の半導体素子を搭載した部分とを封止する樹脂1と、樹脂1を封止するシールド樹脂14と、を備え、シールド樹脂14は、樹脂1よりも透磁率が高い。
Claims (2)
- 電力用半導体素子を含む複数の半導体素子と、
前記複数の半導体素子が一方主面に搭載されたリードフレームと、
前記複数の半導体素子と前記リードフレームの前記複数の半導体素子を搭載した部分とを封止する樹脂と、
前記リードフレームの前記一方主面側において前記複数の半導体素子の上方に配置された少なくとも1つのシールド部材と、
を備え、
前記シールド部材は、前記樹脂に保持され、
前記シールド部材は、前記樹脂よりも透磁率又は導電率が高く、
前記シールド部材の表面は、断面形状が三角の複数の凸部が規則的に配置されて凹凸をなし、
前記複数の凸部は、前記リードフレーム側に突出する凸部と、前記リードフレームとは反対側に突出する凸部とを含む、半導体装置。 - 前記シールド部材は金属、磁性体、セラミックスのいずれかを含む、
請求項1記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016007556A JP6577374B2 (ja) | 2016-01-19 | 2016-01-19 | 半導体装置 |
US15/259,441 US10043762B2 (en) | 2016-01-19 | 2016-09-08 | Semiconductor device |
CN201710038455.6A CN106981477B (zh) | 2016-01-19 | 2017-01-19 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016007556A JP6577374B2 (ja) | 2016-01-19 | 2016-01-19 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017130503A JP2017130503A (ja) | 2017-07-27 |
JP6577374B2 true JP6577374B2 (ja) | 2019-09-18 |
Family
ID=59314882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016007556A Active JP6577374B2 (ja) | 2016-01-19 | 2016-01-19 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10043762B2 (ja) |
JP (1) | JP6577374B2 (ja) |
CN (1) | CN106981477B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10796976B2 (en) | 2018-10-31 | 2020-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of forming the same |
JP2021145036A (ja) * | 2020-03-12 | 2021-09-24 | 富士電機株式会社 | 半導体装置の製造方法及び半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01278052A (ja) * | 1988-04-30 | 1989-11-08 | Nec Corp | 樹脂封止半導体装置 |
JPH0595055A (ja) | 1991-10-01 | 1993-04-16 | Seiko Epson Corp | 半導体集積回路 |
JPH06275741A (ja) * | 1993-03-19 | 1994-09-30 | Toppan Printing Co Ltd | 半導体装置 |
JP3207286B2 (ja) * | 1993-03-22 | 2001-09-10 | 株式会社東芝 | 樹脂封止型半導体装置 |
JPH08191115A (ja) | 1995-01-11 | 1996-07-23 | Fuji Electric Co Ltd | 樹脂封止型半導体装置 |
US6707168B1 (en) * | 2001-05-04 | 2004-03-16 | Amkor Technology, Inc. | Shielded semiconductor package with single-sided substrate and method for making the same |
TWI234250B (en) * | 2004-02-24 | 2005-06-11 | Stack Devices Corp | Semiconductor packaging element capable of avoiding electromagnetic interference and its manufacturing method |
US8183680B2 (en) * | 2006-05-16 | 2012-05-22 | Broadcom Corporation | No-lead IC packages having integrated heat spreader for electromagnetic interference (EMI) shielding and thermal enhancement |
TWI376774B (en) * | 2007-06-08 | 2012-11-11 | Cyntec Co Ltd | Three dimensional package structure |
CN101471329B (zh) * | 2007-12-29 | 2012-06-20 | 清华大学 | 半导体封装件 |
JP2013058513A (ja) | 2011-09-07 | 2013-03-28 | Sharp Corp | 高周波モジュールおよびその製造方法 |
US9601408B2 (en) * | 2012-10-25 | 2017-03-21 | Mitsubishi Electric Corporation | Semiconductor device |
JP5779227B2 (ja) * | 2013-03-22 | 2015-09-16 | 株式会社東芝 | 半導体装置の製造方法 |
-
2016
- 2016-01-19 JP JP2016007556A patent/JP6577374B2/ja active Active
- 2016-09-08 US US15/259,441 patent/US10043762B2/en active Active
-
2017
- 2017-01-19 CN CN201710038455.6A patent/CN106981477B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20170207178A1 (en) | 2017-07-20 |
CN106981477A (zh) | 2017-07-25 |
JP2017130503A (ja) | 2017-07-27 |
US10043762B2 (en) | 2018-08-07 |
CN106981477B (zh) | 2020-03-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9433075B2 (en) | Electric power semiconductor device | |
CN109637983B (zh) | 芯片封装 | |
JP2015142077A (ja) | 半導体装置 | |
JP2012175070A (ja) | 半導体パッケージ | |
JP2020129895A (ja) | 電力変換装置 | |
CN105244329A (zh) | 电子部件和用于从半导体裸片散热的方法 | |
JP6577374B2 (ja) | 半導体装置 | |
CN109196637B (zh) | 半导体装置 | |
JP2011009418A (ja) | スイッチング電源装置の絶縁トランス | |
JP6272213B2 (ja) | 半導体装置 | |
JP2017174951A (ja) | 半導体装置 | |
JP5429413B2 (ja) | 半導体装置 | |
JP5177174B2 (ja) | 半導体装置 | |
WO2017017901A1 (ja) | 半導体装置 | |
US20230146758A1 (en) | Semiconductor device | |
US20150179540A1 (en) | Semiconductor device | |
US10950522B2 (en) | Electronic device | |
JP2021097113A (ja) | 半導体装置 | |
JP2006294729A (ja) | 半導体装置 | |
JP2014236101A (ja) | 半導体装置 | |
WO2018146815A1 (ja) | 電子モジュール | |
JP3226512U (ja) | 放熱機能付きパワー制御器 | |
WO2016002077A1 (ja) | 電力用半導体装置 | |
CN116936502A (zh) | 一种集成氮化镓及驱动***的封装结构及电路组件 | |
TW201712832A (zh) | 封裝結構 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180510 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20181213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190108 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190219 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20190618 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190722 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20190729 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190820 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190822 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6577374 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |