JP6570910B2 - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP6570910B2 JP6570910B2 JP2015147126A JP2015147126A JP6570910B2 JP 6570910 B2 JP6570910 B2 JP 6570910B2 JP 2015147126 A JP2015147126 A JP 2015147126A JP 2015147126 A JP2015147126 A JP 2015147126A JP 6570910 B2 JP6570910 B2 JP 6570910B2
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- H—ELECTRICITY
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- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
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- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67092—Apparatus for mechanical treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02041—Cleaning
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- H01L21/02041—Cleaning
- H01L21/02098—Cleaning only involving lasers, e.g. laser ablation
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
- H01L2223/5446—Located in scribe lines
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
実施形態に係るウエーハの加工方法を図面を参照して説明する。図1は、実施形態に係るウエーハの加工方法の加工対象であるウエーハの斜視図であり、図2は、図1に示されたウエーハの要部の側面図である。ウエーハ(被加工物)Wは、図1に示すように、円板状の基板WSを有する半導体ウエーハや光デバイスウエーハである。また、ウエーハWは、基板WSがリン化合物(InP:インジウムリン)からなる。ウエーハWは、図1及び図2に示すように、基板WS(ウエーハW)の表面に複数のストリートLが格子状に形成されているとともに、複数のストリートLによって区画された複数の領域にそれぞれデバイスDが形成されている。また、ウエーハWのデバイスDは、該デバイスDの表面からそれぞれ突出して形成された複数のバンプBP(金属電極に相当)が形成されている。これらのバンプBPは、例えば、金(Au)もしくは白金(Pt)などの貴金属により形成されている。なお、各デバイスDに形成されたバンプBPの数、位置、及び、大きさは、図1に示すものに限るものではなく、デバイスDの表面に露出して配置されていれば、バンプBPの数、位置及び大きさを適宜に変更することができる。また、実施形態では、金属電極の一例としてバンプBPを示しているが、本発明は、金属電極としてデバイスDの表面と例えば面一に形成された電極を用いても良い。
実施形態の変形例に係るウエーハの加工方法を図面を参照して説明する。図15は、実施形態の変形例に係るウエーハの加工方法の異物除去工程を説明する断面図である。なお、図15において、実施形態と同一部分には、同一符号を付して説明を省略する。
WS 基板
L ストリート
D デバイス
BP バンプ(金属電極)
P 水溶性保護膜
LB レーザー光
PD レーザー加工溝
ST1 ウエーハを保持する工程
ST2 保護膜形成工程
ST3 レーザー光照射工程
ST4 洗浄工程
ST6 異物除去工程
Claims (4)
- リン化合物からなる基板の表面に格子状に形成された複数のストリートによって区画された複数の領域にデバイスおよび金属電極が形成されたウエーハをストリートに沿ってレーザー加工するウエーハの加工方法であって、
前記ウエーハを保持する工程と、
前記ウエーハ表面に水溶性保護膜を形成する保護膜形成工程と、
前記ストリートに沿って前記ウエーハにレーザー光を照射するレーザー光照射工程と、
前記レーザー光を照射した後前記ウエーハを洗浄して前記保護膜を除去する洗浄工程と、
前記洗浄工程後に前記レーザー光照射工程によりレーザー加工部に生成したリンを含む反応生成物が気化して空気中の水分と反応して前記金属電極上にリンを含む異物が生成する時間経過した後に、前記異物を除去する異物除去工程と、
を備えるウエーハの加工方法。 - 前記異物除去工程において、前記ウエーハ表面を水で洗浄して異物を除去する請求項1に記載のウエーハの加工方法。
- 前記異物除去工程において、前記ウエーハを水中に浸漬して異物を除去する請求項1に記載のウエーハの加工方法。
- 前記異物除去工程において、前記ウエーハをエッチングして異物を除去する請求項1に記載のウエーハの加工方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015147126A JP6570910B2 (ja) | 2015-07-24 | 2015-07-24 | ウエーハの加工方法 |
TW105119570A TWI690983B (zh) | 2015-07-24 | 2016-06-22 | 晶圓之加工方法 |
US15/215,125 US9620355B2 (en) | 2015-07-24 | 2016-07-20 | Wafer processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015147126A JP6570910B2 (ja) | 2015-07-24 | 2015-07-24 | ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
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JP2017028170A JP2017028170A (ja) | 2017-02-02 |
JP6570910B2 true JP6570910B2 (ja) | 2019-09-04 |
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JP2015147126A Active JP6570910B2 (ja) | 2015-07-24 | 2015-07-24 | ウエーハの加工方法 |
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US (1) | US9620355B2 (ja) |
JP (1) | JP6570910B2 (ja) |
TW (1) | TWI690983B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6887722B2 (ja) * | 2016-10-25 | 2021-06-16 | 株式会社ディスコ | ウェーハの加工方法及び切削装置 |
JP6899252B2 (ja) * | 2017-05-10 | 2021-07-07 | 株式会社ディスコ | 加工方法 |
JP7068028B2 (ja) * | 2018-05-09 | 2022-05-16 | 株式会社ディスコ | ウェーハの分割方法 |
CN108817700B (zh) * | 2018-09-04 | 2020-08-14 | 京东方科技集团股份有限公司 | 保护膜及激光切割方法 |
DE102021125237A1 (de) | 2021-09-29 | 2023-03-30 | Infineon Technologies Ag | Wafer-chuck für eine laserstrahl-waferzerteilanlage |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004188475A (ja) * | 2002-12-13 | 2004-07-08 | Disco Abrasive Syst Ltd | レーザー加工方法 |
JP4661784B2 (ja) * | 2004-09-30 | 2011-03-30 | 信越半導体株式会社 | Soiウエーハの洗浄方法 |
US7682937B2 (en) * | 2005-11-25 | 2010-03-23 | Advanced Laser Separation International B.V. | Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement |
JP2009528694A (ja) * | 2006-04-18 | 2009-08-06 | エピヴァレー カンパニー リミテッド | Iii族窒化物半導体発光素子及びその製造方法 |
JP2008181941A (ja) * | 2007-01-23 | 2008-08-07 | Covalent Materials Corp | 金属系不純物の除去方法 |
JP2010012508A (ja) | 2008-07-07 | 2010-01-21 | Disco Abrasive Syst Ltd | 保護膜被覆装置及びレーザー加工装置 |
US8216867B2 (en) * | 2009-06-10 | 2012-07-10 | Cree, Inc. | Front end scribing of light emitting diode (LED) wafers and resulting devices |
JP2013058707A (ja) * | 2011-09-09 | 2013-03-28 | Hitachi Cable Ltd | 半導体発光素子の製造方法 |
DE102011054891B4 (de) * | 2011-10-28 | 2017-10-19 | Osram Opto Semiconductors Gmbh | Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds |
US9330994B2 (en) * | 2014-03-28 | 2016-05-03 | Stats Chippac, Ltd. | Semiconductor device and method of forming RDL and vertical interconnect by laser direct structuring |
JP2016136579A (ja) * | 2015-01-23 | 2016-07-28 | 株式会社東芝 | 半導体装置及びその製造方法 |
-
2015
- 2015-07-24 JP JP2015147126A patent/JP6570910B2/ja active Active
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2016
- 2016-06-22 TW TW105119570A patent/TWI690983B/zh active
- 2016-07-20 US US15/215,125 patent/US9620355B2/en active Active
Also Published As
Publication number | Publication date |
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US20170025269A1 (en) | 2017-01-26 |
US9620355B2 (en) | 2017-04-11 |
TW201724210A (zh) | 2017-07-01 |
TWI690983B (zh) | 2020-04-11 |
JP2017028170A (ja) | 2017-02-02 |
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